IN2012DN02727A - - Google Patents

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Publication number
IN2012DN02727A
IN2012DN02727A IN2727DEN2012A IN2012DN02727A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A IN 2727DEN2012 A IN2727DEN2012 A IN 2727DEN2012A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A
Authority
IN
India
Prior art keywords
heat sink
metal plate
layer
bonding
solidifying
Prior art date
Application number
Other languages
English (en)
Inventor
Hiroshi Tonomura
Yoshiyuki Nagatomo
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN02727A publication Critical patent/IN2012DN02727A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/43—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing gases, e.g. forced air cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
IN2727DEN2012 2009-09-09 2010-09-07 IN2012DN02727A (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009208439 2009-09-09
JP2009208438 2009-09-09
JP2009252115 2009-11-02
JP2009252114 2009-11-02
PCT/JP2010/065316 WO2011030754A1 (ja) 2009-09-09 2010-09-07 ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板及びパワーモジュール

Publications (1)

Publication Number Publication Date
IN2012DN02727A true IN2012DN02727A (de) 2015-09-11

Family

ID=43732426

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2727DEN2012 IN2012DN02727A (de) 2009-09-09 2010-09-07

Country Status (7)

Country Link
US (1) US9076755B2 (de)
EP (1) EP2477217B1 (de)
KR (1) KR101690820B1 (de)
CN (1) CN102498564B (de)
IN (1) IN2012DN02727A (de)
TW (1) TWI521651B (de)
WO (1) WO2011030754A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103988297B (zh) * 2011-12-12 2018-11-23 三菱综合材料株式会社 功率模块及其制造方法
JP5403129B2 (ja) * 2012-03-30 2014-01-29 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
JP5918008B2 (ja) * 2012-05-08 2016-05-18 昭和電工株式会社 冷却器の製造方法
IN2015DN02361A (de) * 2012-09-21 2015-09-04 Mitsubishi Materials Corp
WO2014061588A1 (ja) 2012-10-16 2014-04-24 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール、及びヒートシンク付パワーモジュール用基板の製造方法
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
JP2014165456A (ja) * 2013-02-27 2014-09-08 Fujitsu Mobile Communications Ltd 電子機器及び電子機器のリアケース
JP6621076B2 (ja) * 2013-03-29 2019-12-18 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール
US11574889B2 (en) * 2013-06-04 2023-02-07 Infineon Technologies Ag Power module comprising two substrates and method of manufacturing the same
JP6079505B2 (ja) * 2013-08-26 2017-02-15 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
EP3057125B1 (de) * 2013-10-10 2020-09-30 Mitsubishi Materials Corporation Substrat für ein leistungsmodul mit einem kühlkörper und verfahren zur herstellung davon
JP6341822B2 (ja) * 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
KR20170073618A (ko) * 2014-10-16 2017-06-28 미쓰비시 마테리알 가부시키가이샤 냉각기가 장착된 파워 모듈용 기판 및 그 제조 방법
CN105742252B (zh) * 2014-12-09 2019-05-07 台达电子工业股份有限公司 一种功率模块及其制造方法
US9693488B2 (en) * 2015-02-13 2017-06-27 Deere & Company Electronic assembly with one or more heat sinks
JP6332108B2 (ja) * 2015-03-30 2018-05-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法
CN104779228B (zh) * 2015-04-14 2018-09-28 天津大学 一种功率半导体模块三维封装的结构和方法
CN208369332U (zh) * 2017-05-17 2019-01-11 德昌电机(深圳)有限公司 一种电机、电路板及应用该电机的引擎冷却模组
KR102505443B1 (ko) * 2017-11-16 2023-03-03 삼성전기주식회사 인쇄회로기판
CN113133264B (zh) * 2019-12-30 2023-06-23 惠州视维新技术有限公司 一种散热结构、散热结构的制作方法及显示装置
EP3852138B1 (de) 2020-01-20 2023-11-08 Infineon Technologies Austria AG Elektronisches modul mit einem halbleitergehäuse, das mit einem fluidkühlkörper verbunden ist
JP7363613B2 (ja) * 2020-03-13 2023-10-18 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板
EP4123697A4 (de) * 2020-03-18 2024-04-24 Mitsubishi Materials Corporation Isolierte leiterplatte
TWI759199B (zh) * 2021-05-07 2022-03-21 艾姆勒車電股份有限公司 具有非矩形散熱層的散熱基材結構
WO2022250382A1 (ko) * 2021-05-27 2022-12-01 주식회사 아모그린텍 히트싱크 일체형 세라믹 기판 및 그 제조방법
KR102645303B1 (ko) * 2021-07-09 2024-03-08 주식회사 아모센스 세라믹 기판 및 그 제조방법
CN118542080A (zh) * 2022-03-17 2024-08-23 株式会社村田制作所 电源模块的冷却结构
CN115020359A (zh) * 2022-08-09 2022-09-06 成都复锦功率半导体技术发展有限公司 一种半导体芯片封装结构及其制备方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04187387A (ja) * 1990-11-20 1992-07-06 Sumitomo Metal Ind Ltd 防振金属材料
JPH0748180A (ja) * 1993-08-03 1995-02-21 Noritake Co Ltd セラミックス−金属接合体
EP0693776B1 (de) * 1994-07-15 2000-05-31 Mitsubishi Materials Corporation Keramik-Gehäuse mit hoher Wärmeabstrahlung
JP3933287B2 (ja) 1998-01-30 2007-06-20 電気化学工業株式会社 ヒートシンク付き回路基板
JP2001010874A (ja) 1999-03-27 2001-01-16 Nippon Hybrid Technologies Kk 無機材料とアルミニウムを含む金属との複合材料の製造方法とその関連する製品
JP2001018074A (ja) 1999-07-07 2001-01-23 Sumitomo Metal Ind Ltd アルミニウムクラッド材の製造方法
JP2001168250A (ja) 1999-12-10 2001-06-22 Sumitomo Electric Ind Ltd 半導体用絶縁基板およびそれを用いた半導体装置並びに該基板の製造方法
JP2002009212A (ja) 2000-06-23 2002-01-11 Denki Kagaku Kogyo Kk 放熱構造体の製造方法
JP4134537B2 (ja) 2000-08-09 2008-08-20 三菱マテリアル株式会社 パワーモジュール及びヒートシンク付パワーモジュール
WO2002013267A1 (en) 2000-08-09 2002-02-14 Mitsubishi Materials Corporation Power module and power module with heat sink
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
KR20030072324A (ko) 2001-07-09 2003-09-13 이비덴 가부시키가이샤 세라믹 히터 및 세라믹 접합체
DE10142615A1 (de) * 2001-08-31 2003-04-10 Siemens Ag Leistungselektronikeinheit
JP4360847B2 (ja) * 2003-06-30 2009-11-11 日本特殊陶業株式会社 セラミック回路基板、放熱モジュール、および半導体装置
KR101108454B1 (ko) * 2004-04-05 2012-01-31 미쓰비시 마테리알 가부시키가이샤 Ａｌ／ＡｌＮ 접합체, 전력 모듈용 기판 및 전력 모듈, 그리고 Ａｌ／ＡｌＮ 접합체의 제조 방법
CN100590856C (zh) 2005-01-20 2010-02-17 联合材料公司 半导体装置用部件及其制造方法
JP4037425B2 (ja) 2005-07-04 2008-01-23 電気化学工業株式会社 セラミック回路基板およびそれを用いた電力制御部品。
CN101273450A (zh) * 2005-09-28 2008-09-24 日本碍子株式会社 散热模块及其制造方法
WO2007066401A1 (ja) * 2005-12-08 2007-06-14 Fujitsu Limited 電子部品の製造方法および熱伝導部材の製造方法並びに電子部品用熱伝導部材の実装方法
JPWO2007105361A1 (ja) * 2006-03-08 2009-07-30 株式会社東芝 電子部品モジュール
US8030760B2 (en) * 2006-12-05 2011-10-04 Kabushiki Kaisha Toyota Jidoshokki Semiconductor apparatus and manufacturing method thereof
WO2008075409A1 (ja) 2006-12-19 2008-06-26 Kabushiki Kaisha Toyota Jidoshokki パワーモジュール用ベース、パワーモジュール用ベースの製造方法及びパ ワーモジュール
JP4965242B2 (ja) * 2006-12-27 2012-07-04 株式会社ティラド アルミニューム製ヒートシンクの製造方法
JP5145729B2 (ja) * 2007-02-26 2013-02-20 富士電機株式会社 半田接合方法およびそれを用いた半導体装置の製造方法
JP4747315B2 (ja) 2007-11-19 2011-08-17 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP5294657B2 (ja) 2008-03-06 2013-09-18 キヤノン株式会社 インクジェット記録ヘッド
JP4931842B2 (ja) 2008-03-06 2012-05-16 富士フイルム株式会社 打滴装置および打滴方法
JP4525787B2 (ja) 2008-04-09 2010-08-18 富士ゼロックス株式会社 画像抽出装置、及び画像抽出プログラム
JP2009252114A (ja) 2008-04-09 2009-10-29 Hitachi Ltd ストレージシステム及びデータ退避方法
JP5515947B2 (ja) * 2010-03-29 2014-06-11 株式会社豊田自動織機 冷却装置

Also Published As

Publication number Publication date
EP2477217A4 (de) 2018-01-24
US20130010429A1 (en) 2013-01-10
TWI521651B (zh) 2016-02-11
CN102498564B (zh) 2015-08-26
TW201140764A (en) 2011-11-16
KR101690820B1 (ko) 2016-12-28
EP2477217B1 (de) 2019-05-08
WO2011030754A1 (ja) 2011-03-17
CN102498564A (zh) 2012-06-13
KR20120062751A (ko) 2012-06-14
US9076755B2 (en) 2015-07-07
EP2477217A1 (de) 2012-07-18

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