IN2012DN03051A - - Google Patents
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- Publication number
- IN2012DN03051A IN2012DN03051A IN3051DEN2012A IN2012DN03051A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A IN 3051DEN2012 A IN3051DEN2012 A IN 3051DEN2012A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A
- Authority
- IN
- India
- Prior art keywords
- devices
- growth substrate
- methods
- flexible
- reuse
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
- H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
- H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24137309P | 2009-09-10 | 2009-09-10 | |
| US24137409P | 2009-09-10 | 2009-09-10 | |
| US35829810P | 2010-06-24 | 2010-06-24 | |
| PCT/US2010/048213 WO2011066029A2 (en) | 2009-09-10 | 2010-09-09 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN03051A true IN2012DN03051A (de) | 2015-07-31 |
Family
ID=44067165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3051DEN2012 IN2012DN03051A (de) | 2009-09-10 | 2010-09-09 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8378385B2 (de) |
| EP (1) | EP2462631B1 (de) |
| JP (1) | JP5619901B2 (de) |
| KR (1) | KR101714812B1 (de) |
| CN (1) | CN102804408B (de) |
| AU (1) | AU2010325106B2 (de) |
| CA (1) | CA2789391A1 (de) |
| IN (1) | IN2012DN03051A (de) |
| TW (1) | TWI550895B (de) |
| WO (1) | WO2011066029A2 (de) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9040392B2 (en) | 2011-06-15 | 2015-05-26 | International Business Machines Corporation | Method for controlled removal of a semiconductor device layer from a base substrate |
| CA2840517A1 (en) * | 2011-06-29 | 2013-06-27 | Stephen R. Forrest | Sacrificial etch protection layers for reuse of wafers after epitaxial lift off |
| CN106098842B (zh) * | 2011-07-06 | 2018-12-18 | 密歇根大学董事会 | 使用外延剥离和冷焊结合的半导体太阳能电池的集成太阳能收集器 |
| CN102244134B (zh) * | 2011-08-02 | 2013-05-15 | 厦门市三安光电科技有限公司 | 一种高效四结太阳能电池及其制作方法 |
| US8541315B2 (en) * | 2011-09-19 | 2013-09-24 | International Business Machines Corporation | High throughput epitaxial lift off for flexible electronics |
| US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
| US8916954B2 (en) * | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
| CN104335365A (zh) | 2012-02-07 | 2015-02-04 | 密歇根大学董事会 | 用于对在外延剥离之后的晶圆进行再利用的热表面处理 |
| KR20130104974A (ko) | 2012-03-16 | 2013-09-25 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
| US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
| US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
| WO2014144120A1 (en) * | 2013-03-15 | 2014-09-18 | First Solar, Inc. | Method of manufacturing a photovoltaic device |
| CN103346079A (zh) * | 2013-06-07 | 2013-10-09 | 刘凤全 | 一种重复使用的半导体基底及其纯化重复使用方法 |
| US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
| JP2016532303A (ja) | 2013-08-26 | 2016-10-13 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | エピタキシャルリフトオフおよび剥離の組み合わせによる薄膜リフトオフ |
| CN103489958B (zh) * | 2013-08-27 | 2015-09-02 | 湖南红太阳光电科技有限公司 | 一种柔性硅基砷化镓电池的制备方法 |
| KR20160084858A (ko) | 2013-11-11 | 2016-07-14 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 에픽택셜 리프트 오프 공정을 위한 열적 보조 냉간 용접 본딩 |
| US10637391B2 (en) | 2013-11-29 | 2020-04-28 | The Regents Of The University Of Michigan | Autonomous solar tracking in flat-plate photovoltaic panels using kirigami-inspired microstructures |
| US10535685B2 (en) | 2013-12-02 | 2020-01-14 | The Regents Of The University Of Michigan | Fabrication of thin-film electronic devices with non-destructive wafer reuse |
| WO2015156871A2 (en) | 2014-01-15 | 2015-10-15 | Forrest Stephen R Forrest | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
| WO2015156874A2 (en) | 2014-01-15 | 2015-10-15 | The Regents Of The Univerity Of Michigan | Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method |
| JP2017510085A (ja) | 2014-04-04 | 2017-04-06 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 非トラッキングミニ複合放物面集光器と集積化されたエピタキシャルリフトオフ処理されたＧａＡｓ薄膜太陽電池 |
| US10141465B2 (en) * | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
| WO2015168272A1 (en) | 2014-04-29 | 2015-11-05 | The Regents Of The University Of Michigan | Flexible antenna integrated with an array of solar cells |
| US9786643B2 (en) * | 2014-07-08 | 2017-10-10 | Micron Technology, Inc. | Semiconductor devices comprising protected side surfaces and related methods |
| CN104241205B (zh) * | 2014-09-18 | 2017-04-26 | 厦门乾照光电股份有限公司 | 一种衬底可剥离的外延结构及其应用 |
| US9263626B1 (en) | 2015-01-29 | 2016-02-16 | International Business Machines Corporation | Crystalline thin film photovoltaic cell |
| KR102533932B1 (ko) | 2015-03-18 | 2023-05-17 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 사전 패터닝된 메사들을 통한 스트레인 경감 에피택셜 리프트-오프 |
| KR101743017B1 (ko) | 2015-05-19 | 2017-06-05 | 한국과학기술연구원 | 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
| CN105140318B (zh) * | 2015-06-30 | 2017-05-17 | 苏州强明光电有限公司 | 太阳能电池外延片及其制作方法 |
| CN104993003B (zh) * | 2015-07-16 | 2017-03-08 | 苏州强明光电有限公司 | 一种太阳能电池外延片及其制作方法 |
| US20180337082A1 (en) * | 2015-08-31 | 2018-11-22 | Stc.Unm | Mixed group-v sacrificial layers for release and transfer of membranes |
| CN105428215A (zh) * | 2015-11-19 | 2016-03-23 | 中山德华芯片技术有限公司 | 一种基于金属应力层及亲水剂处理的外延片整面剥离方法 |
| CN105428427B (zh) * | 2015-12-11 | 2017-06-27 | 中国电子科技集团公司第十八研究所 | 薄膜砷化镓太阳电池衬底复用的衬底保护结构及加工工艺 |
| WO2017196431A2 (en) | 2016-02-24 | 2017-11-16 | The Regents Of The University Of Michigan | Effective compound substrate for non-destructive epitaxial lift-off |
| US9941168B1 (en) | 2016-09-21 | 2018-04-10 | Korea Institute Of Science And Technology | Method for manufacturing semiconductor device by epitaxial lift-off using plane dependency of III-V compound |
| KR101824523B1 (ko) * | 2017-01-11 | 2018-02-01 | 엘지전자 주식회사 | 태양 전지 모듈 및 이를 구비하는 휴대용 충전기 |
| CN107634121A (zh) * | 2017-08-15 | 2018-01-26 | 苏州苏纳光电有限公司 | 基于InP衬底剥离的红外光电探测器及其预制件的制备方法 |
| US10553743B2 (en) | 2017-11-20 | 2020-02-04 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Flexible crystalline ultra-thin Si solar cells |
| CN108040435B (zh) * | 2017-12-12 | 2020-06-19 | 北京科技大学 | 一种氮化铝陶瓷基板线路刻蚀方法 |
| EP3743948A4 (de) * | 2018-01-25 | 2021-11-03 | Saint-Gobain ADFORS Canada, Ltd. | Fotovoltaisches textil |
| WO2019152770A1 (en) * | 2018-02-02 | 2019-08-08 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultra-thin flexible rear-contact si solar cells and methods for manufacturing the same |
| CN108520901A (zh) * | 2018-04-16 | 2018-09-11 | 江苏宜兴德融科技有限公司 | 薄膜太阳能电池及其制造方法 |
| US12046471B1 (en) | 2018-06-06 | 2024-07-23 | United States Of America As Represented By The Secretary Of The Air Force | Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment |
| KR102131619B1 (ko) * | 2018-06-12 | 2020-07-08 | 한국과학기술연구원 | 인화계 기판의 결정결함을 방지하기 위해 박막층을 형성하는 방법 |
| KR20200021775A (ko) * | 2018-08-21 | 2020-03-02 | 엘지전자 주식회사 | 지지 핸들 및 이를 이용한 화합물 반도체 태양전지의 제조 방법 |
| US11087974B2 (en) * | 2018-10-08 | 2021-08-10 | The Regents Of The University Of Michigan | Preparation of compound semiconductor substrate for epitaxial growth via non-destructive epitaxial lift-off |
| CN109321253A (zh) * | 2018-11-28 | 2019-02-12 | 湖北兴福电子材料有限公司 | 一种硅晶圆的蚀刻液 |
| CN110224045B (zh) * | 2019-07-16 | 2021-06-15 | 中国科学院上海技术物理研究所 | 一种柔性InGaAs探测器的制备方法 |
| FI129855B (en) | 2019-10-08 | 2022-09-30 | Jani Oksanen | METHOD AND STRUCTURE FOR MANUFACTURING THIN FILMS |
| RU196935U1 (ru) * | 2019-10-09 | 2020-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP |
| JP2022013255A (ja) * | 2020-07-03 | 2022-01-18 | 信越半導体株式会社 | 接合型半導体ウェーハの製造方法及び接合型半導体素子の製造方法 |
| CN111785794B (zh) * | 2020-07-20 | 2023-09-08 | 西安电子科技大学 | 基于ScAlN与InAlN极化插入层增强电场的N极性InGaN基太阳能电池 |
| EP4218060A4 (de) * | 2020-09-23 | 2024-09-25 | Antora Energy, Inc. | Strukturen und verfahren zur herstellung einer optoelektronischen vorrichtung |
| CN112701176B (zh) * | 2021-03-23 | 2021-06-08 | 南昌凯迅光电有限公司 | 一种砷化镓薄膜太阳电池及制作方法 |
| KR102625586B1 (ko) | 2021-07-14 | 2024-01-16 | 한국광기술원 | 기판의 재활용이 가능한 ⅲ-ⅴ족 나노로드 태양전지 제조방법 |
| US12424965B2 (en) | 2022-06-02 | 2025-09-23 | Antora Energy, Inc. | Layered window in thermophotovoltaic devices |
| WO2024189753A1 (ja) * | 2023-03-13 | 2024-09-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08288297A (ja) * | 1995-04-13 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| JP2002284600A (ja) | 2001-03-26 | 2002-10-03 | Hitachi Cable Ltd | 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板 |
| US6895667B2 (en) | 2001-04-13 | 2005-05-24 | The Trustees Of Princeton University | Transfer of patterned metal by cold-welding |
| KR100438895B1 (ko) | 2001-12-28 | 2004-07-02 | 한국전자통신연구원 | 고전자 이동도 트랜지스터 전력 소자 및 그 제조 방법 |
| US8173891B2 (en) * | 2002-05-21 | 2012-05-08 | Alliance For Sustainable Energy, Llc | Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps |
| CN100547760C (zh) * | 2002-08-26 | 2009-10-07 | S.O.I.Tec绝缘体上硅技术公司 | 在已经移去薄层之后对包括缓冲层的晶片的再循环方法 |
| JP4315744B2 (ja) * | 2003-06-25 | 2009-08-19 | 株式会社沖データ | 積層体及び半導体装置の製造方法 |
| WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
| JP4518886B2 (ja) * | 2004-09-09 | 2010-08-04 | シャープ株式会社 | 半導体素子の製造方法 |
| JP2007036010A (ja) | 2005-07-28 | 2007-02-08 | Toshiba Corp | ショットキーバリアダイオード装置及びその製造方法 |
| DE102005047152A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips |
| US7709269B2 (en) * | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
| US20100047959A1 (en) | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
| JP2008053250A (ja) * | 2006-08-22 | 2008-03-06 | Sony Corp | 半導体装置の製造方法 |
| KR101090900B1 (ko) * | 2006-10-18 | 2011-12-08 | 니텍 인코포레이티드 | 수직구조의 심자외선 발광다이오드 |
| SG182989A1 (en) * | 2007-07-03 | 2012-08-30 | Microlink Devices Inc | Methods for fabricating thin film iii-v compound solar cell |
| TW200905922A (en) * | 2007-07-30 | 2009-02-01 | Juh-Yuh Su | Reusable substrate structure and method of handling the same |
-
2010
- 2010-09-09 WO PCT/US2010/048213 patent/WO2011066029A2/en not_active Ceased
- 2010-09-09 EP EP10818111.6A patent/EP2462631B1/de active Active
- 2010-09-09 CN CN201080049905.8A patent/CN102804408B/zh not_active Expired - Fee Related
- 2010-09-09 US US12/878,261 patent/US8378385B2/en active Active
- 2010-09-09 AU AU2010325106A patent/AU2010325106B2/en not_active Ceased
- 2010-09-09 JP JP2012528887A patent/JP5619901B2/ja active Active
- 2010-09-09 CA CA2789391A patent/CA2789391A1/en not_active Abandoned
- 2010-09-09 KR KR1020127009157A patent/KR101714812B1/ko active Active
- 2010-09-09 IN IN3051DEN2012 patent/IN2012DN03051A/en unknown
- 2010-09-10 TW TW099130822A patent/TWI550895B/zh active
-
2013
- 2013-01-25 US US13/750,660 patent/US8927319B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| AU2010325106B2 (en) | 2015-04-09 |
| AU2010325106A1 (en) | 2012-04-12 |
| US8378385B2 (en) | 2013-02-19 |
| US8927319B2 (en) | 2015-01-06 |
| TW201125152A (en) | 2011-07-16 |
| KR20120103762A (ko) | 2012-09-19 |
| CA2789391A1 (en) | 2011-06-03 |
| JP2013504878A (ja) | 2013-02-07 |
| JP5619901B2 (ja) | 2014-11-05 |
| EP2462631B1 (de) | 2021-06-30 |
| US20110186910A1 (en) | 2011-08-04 |
| WO2011066029A2 (en) | 2011-06-03 |
| EP2462631A2 (de) | 2012-06-13 |
| CN102804408B (zh) | 2016-01-20 |
| CN102804408A (zh) | 2012-11-28 |
| TWI550895B (zh) | 2016-09-21 |
| KR101714812B1 (ko) | 2017-03-22 |
| US20130237001A1 (en) | 2013-09-12 |
| WO2011066029A3 (en) | 2012-05-31 |
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