IT1185258B - Elemento di pilotaggio per carichi induttivi - Google Patents

Elemento di pilotaggio per carichi induttivi

Info

Publication number
IT1185258B
IT1185258B IT21578/85A IT2157885A IT1185258B IT 1185258 B IT1185258 B IT 1185258B IT 21578/85 A IT21578/85 A IT 21578/85A IT 2157885 A IT2157885 A IT 2157885A IT 1185258 B IT1185258 B IT 1185258B
Authority
IT
Italy
Prior art keywords
inductive loads
piloting element
piloting
inductive
loads
Prior art date
Application number
IT21578/85A
Other languages
English (en)
Other versions
IT8521578A0 (it
Inventor
Angelo Alzati
Flavio Villa
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT21578/85A priority Critical patent/IT1185258B/it
Publication of IT8521578A0 publication Critical patent/IT8521578A0/it
Priority to DE3622141A priority patent/DE3622141C2/de
Priority to FR868609783A priority patent/FR2585202B1/fr
Priority to GB8616870A priority patent/GB2177848B/en
Priority to US06/885,503 priority patent/US4783693A/en
Priority to JP61165456A priority patent/JPS6221261A/ja
Priority to NL8601833A priority patent/NL193040C/nl
Application granted granted Critical
Publication of IT1185258B publication Critical patent/IT1185258B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G11B5/022—H-Bridge head driver circuit, the "H" configuration allowing to inverse the current direction in the head
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
    • H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT21578/85A 1985-07-16 1985-07-16 Elemento di pilotaggio per carichi induttivi IT1185258B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT21578/85A IT1185258B (it) 1985-07-16 1985-07-16 Elemento di pilotaggio per carichi induttivi
DE3622141A DE3622141C2 (de) 1985-07-16 1986-07-02 Treiberelement für induktive Lasten
FR868609783A FR2585202B1 (fr) 1985-07-16 1986-07-04 Element pilote pour charges inductives
GB8616870A GB2177848B (en) 1985-07-16 1986-07-10 Driver element for inductive loads
US06/885,503 US4783693A (en) 1985-07-16 1986-07-14 Driver element for inductive loads
JP61165456A JPS6221261A (ja) 1985-07-16 1986-07-14 駆動要素
NL8601833A NL193040C (nl) 1985-07-16 1986-07-14 Stuurelement voor inductieve belastingen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21578/85A IT1185258B (it) 1985-07-16 1985-07-16 Elemento di pilotaggio per carichi induttivi

Publications (2)

Publication Number Publication Date
IT8521578A0 IT8521578A0 (it) 1985-07-16
IT1185258B true IT1185258B (it) 1987-11-04

Family

ID=11183865

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21578/85A IT1185258B (it) 1985-07-16 1985-07-16 Elemento di pilotaggio per carichi induttivi

Country Status (7)

Country Link
US (1) US4783693A (it)
JP (1) JPS6221261A (it)
DE (1) DE3622141C2 (it)
FR (1) FR2585202B1 (it)
GB (1) GB2177848B (it)
IT (1) IT1185258B (it)
NL (1) NL193040C (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952992A (en) * 1987-08-18 1990-08-28 Siliconix Incorporated Method and apparatus for improving the on-voltage characteristics of a semiconductor device
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
EP0491217A1 (de) * 1990-12-19 1992-06-24 Siemens Aktiengesellschaft Integrierte Transistor-Freilaufdioden-Anordnung
DE19524529A1 (de) * 1995-07-05 1997-01-09 Siemens Ag Leistungsarme Treiberstufe
JP2014517185A (ja) 2011-04-11 2014-07-17 ノストラム エナジー ピーティーイー．リミテッド 内部冷却式高圧縮リーン・バーン内燃エンジン
KR101922117B1 (ko) * 2012-08-16 2018-11-26 삼성전자주식회사 트랜지스터를 포함하는 전자소자 및 그 동작방법
US9847233B2 (en) * 2014-07-29 2017-12-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and formation thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909700A (en) * 1974-01-18 1975-09-30 Gen Electric Monolithic semiconductor rectifier circuit structure
JPS5658261A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
JPS56142664A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
US4331887A (en) * 1980-06-23 1982-05-25 International Business Machines Corporation Current switch driving circuit arrangements
JPS5759378A (en) * 1980-09-27 1982-04-09 Fujitsu Ltd Manufacture of semiconductor device
GB2100507A (en) * 1981-06-17 1982-12-22 Philips Electronic Associated Method of making a vertical igfet
JPS5830234A (ja) * 1981-08-18 1983-02-22 Fujitsu Ltd 論理回路
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
JPS58110072A (ja) * 1981-12-23 1983-06-30 Fuji Electric Co Ltd 半導体装置
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement

Also Published As

Publication number Publication date
NL193040C (nl) 1998-08-04
US4783693A (en) 1988-11-08
DE3622141C2 (de) 1999-01-21
GB2177848B (en) 1989-07-12
JPS6221261A (ja) 1987-01-29
NL8601833A (nl) 1987-02-16
FR2585202B1 (fr) 1991-08-30
GB2177848A (en) 1987-01-28
GB8616870D0 (en) 1986-08-20
DE3622141A1 (de) 1987-01-22
FR2585202A1 (fr) 1987-01-23
NL193040B (nl) 1998-04-01
IT8521578A0 (it) 1985-07-16

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730