IT1204522B - Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici - Google Patents

Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici

Info

Publication number
IT1204522B
IT1204522B IT20111/87A IT2011187A IT1204522B IT 1204522 B IT1204522 B IT 1204522B IT 20111/87 A IT20111/87 A IT 20111/87A IT 2011187 A IT2011187 A IT 2011187A IT 1204522 B IT1204522 B IT 1204522B
Authority
IT
Italy
Prior art keywords
piloting
power circuit
electric motors
integrated power
monolithic integrated
Prior art date
Application number
IT20111/87A
Other languages
English (en)
Other versions
IT8720111A0 (it
Inventor
Giuseppe Ferla
Salvatore Musumeci
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT20111/87A priority Critical patent/IT1204522B/it
Publication of IT8720111A0 publication Critical patent/IT8720111A0/it
Priority to DE3855930T priority patent/DE3855930T2/de
Priority to EP88200565A priority patent/EP0287147B1/en
Priority to JP63082405A priority patent/JPS63268486A/ja
Application granted granted Critical
Publication of IT1204522B publication Critical patent/IT1204522B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
    • H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
    • H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Direct Current Motors (AREA)
IT20111/87A 1987-04-14 1987-04-14 Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici IT1204522B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT20111/87A IT1204522B (it) 1987-04-14 1987-04-14 Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici
DE3855930T DE3855930T2 (de) 1987-04-14 1988-03-25 Monolitisch integrierte Leistungsschaltung in Semibrückenkonfiguration, insbesondere für die Steuerung elektrischer Motoren
EP88200565A EP0287147B1 (en) 1987-04-14 1988-03-25 Monolithic integrated power circuit in semibridge configuration, particularly for piloting electric motors
JP63082405A JPS63268486A (ja) 1987-04-14 1988-04-05 特に電動機用パイロット回路としてのセミブリッジ構造のモノリシック集積パワー回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20111/87A IT1204522B (it) 1987-04-14 1987-04-14 Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici

Publications (2)

Publication Number Publication Date
IT8720111A0 IT8720111A0 (it) 1987-04-14
IT1204522B true IT1204522B (it) 1989-03-03

Family

ID=11163884

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20111/87A IT1204522B (it) 1987-04-14 1987-04-14 Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici

Country Status (4)

Country Link
EP (1) EP0287147B1 (it)
JP (1) JPS63268486A (it)
DE (1) DE3855930T2 (it)
IT (1) IT1204522B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
DE4222973A1 (de) * 1992-07-13 1994-01-20 Asea Brown Boveri Bidirektionaler Halbleiterschalter

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
JPS5658261A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
DE3435571A1 (de) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung

Also Published As

Publication number Publication date
DE3855930D1 (de) 1997-07-10
DE3855930T2 (de) 1997-12-18
JPS63268486A (ja) 1988-11-07
EP0287147A3 (en) 1992-07-15
EP0287147B1 (en) 1997-06-04
EP0287147A2 (en) 1988-10-19
IT8720111A0 (it) 1987-04-14

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970429