IT8720111A0 - Circuito integrato monolitico di potenza in configurazione a semiponte, particolarmente per il pilotaggio di motori elettrici. - Google Patents
Circuito integrato monolitico di potenza in configurazione a semiponte, particolarmente per il pilotaggio di motori elettrici.Info
- Publication number
- IT8720111A0 IT8720111A0 IT8720111A IT2011187A IT8720111A0 IT 8720111 A0 IT8720111 A0 IT 8720111A0 IT 8720111 A IT8720111 A IT 8720111A IT 2011187 A IT2011187 A IT 2011187A IT 8720111 A0 IT8720111 A0 IT 8720111A0
- Authority
- IT
- Italy
- Prior art keywords
- semi
- driving
- integrated circuit
- electric motors
- bridge configuration
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
- H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Direct Current Motors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20111/87A IT1204522B (it) | 1987-04-14 | 1987-04-14 | Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici |
| DE3855930T DE3855930T2 (de) | 1987-04-14 | 1988-03-25 | Monolitisch integrierte Leistungsschaltung in Semibrückenkonfiguration, insbesondere für die Steuerung elektrischer Motoren |
| EP88200565A EP0287147B1 (en) | 1987-04-14 | 1988-03-25 | Monolithic integrated power circuit in semibridge configuration, particularly for piloting electric motors |
| JP63082405A JPS63268486A (ja) | 1987-04-14 | 1988-04-05 | 特に電動機用パイロット回路としてのセミブリッジ構造のモノリシック集積パワー回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20111/87A IT1204522B (it) | 1987-04-14 | 1987-04-14 | Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8720111A0 true IT8720111A0 (it) | 1987-04-14 |
| IT1204522B IT1204522B (it) | 1989-03-03 |
Family
ID=11163884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20111/87A IT1204522B (it) | 1987-04-14 | 1987-04-14 | Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0287147B1 (it) |
| JP (1) | JPS63268486A (it) |
| DE (1) | DE3855930T2 (it) |
| IT (1) | IT1204522B (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0127282B1 (ko) * | 1992-05-18 | 1998-04-02 | 도요다 요시또시 | 반도체 장치 |
| DE4222973A1 (de) * | 1992-07-13 | 1994-01-20 | Asea Brown Boveri | Bidirektionaler Halbleiterschalter |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2408914A1 (fr) * | 1977-11-14 | 1979-06-08 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication |
| JPS5658261A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device |
| DE3435571A1 (de) * | 1984-09-27 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte bipolare darlington-schaltung |
-
1987
- 1987-04-14 IT IT20111/87A patent/IT1204522B/it active
-
1988
- 1988-03-25 EP EP88200565A patent/EP0287147B1/en not_active Expired - Lifetime
- 1988-03-25 DE DE3855930T patent/DE3855930T2/de not_active Expired - Fee Related
- 1988-04-05 JP JP63082405A patent/JPS63268486A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3855930D1 (de) | 1997-07-10 |
| DE3855930T2 (de) | 1997-12-18 |
| IT1204522B (it) | 1989-03-03 |
| JPS63268486A (ja) | 1988-11-07 |
| EP0287147A3 (en) | 1992-07-15 |
| EP0287147B1 (en) | 1997-06-04 |
| EP0287147A2 (en) | 1988-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970429 |