IT1213234B - Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos. - Google Patents

Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.

Info

Publication number
IT1213234B
IT1213234B IT8423302A IT2330284A IT1213234B IT 1213234 B IT1213234 B IT 1213234B IT 8423302 A IT8423302 A IT 8423302A IT 2330284 A IT2330284 A IT 2330284A IT 1213234 B IT1213234 B IT 1213234B
Authority
IT
Italy
Prior art keywords
manufacture
semiconductor devices
dmos semiconductor
process perfected
perfected
Prior art date
Application number
IT8423302A
Other languages
English (en)
Other versions
IT8423302A0 (it
Inventor
Claudio Contiero
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8423302A priority Critical patent/IT1213234B/it
Publication of IT8423302A0 publication Critical patent/IT8423302A0/it
Priority to US06/773,318 priority patent/US4757032A/en
Priority to DE8585113221T priority patent/DE3587231T2/de
Priority to EP85113221A priority patent/EP0179407B1/en
Priority to JP60238542A priority patent/JPS61102782A/ja
Application granted granted Critical
Publication of IT1213234B publication Critical patent/IT1213234B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
IT8423302A 1984-10-25 1984-10-25 Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos. IT1213234B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8423302A IT1213234B (it) 1984-10-25 1984-10-25 Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
US06/773,318 US4757032A (en) 1984-10-25 1985-09-06 Method for DMOS semiconductor device fabrication
DE8585113221T DE3587231T2 (de) 1984-10-25 1985-10-18 Verfahren zum herstellen einer dmos-halbleiteranordnung.
EP85113221A EP0179407B1 (en) 1984-10-25 1985-10-18 Method for producing a dmos semiconductor device
JP60238542A JPS61102782A (ja) 1984-10-25 1985-10-23 Ｄｍｏｓ半導体素子製作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423302A IT1213234B (it) 1984-10-25 1984-10-25 Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.

Publications (2)

Publication Number Publication Date
IT8423302A0 IT8423302A0 (it) 1984-10-25
IT1213234B true IT1213234B (it) 1989-12-14

Family

ID=11205870

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423302A IT1213234B (it) 1984-10-25 1984-10-25 Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.

Country Status (5)

Country Link
US (1) US4757032A (it)
EP (1) EP0179407B1 (it)
JP (1) JPS61102782A (it)
DE (1) DE3587231T2 (it)
IT (1) IT1213234B (it)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
IT1197523B (it) * 1986-10-30 1988-11-30 Sgs Microelettronica Spa Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
US5179034A (en) * 1987-08-24 1993-01-12 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
JPH0766968B2 (ja) * 1987-08-24 1995-07-19 株式会社日立製作所 半導体装置及びその製造方法
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
JPH02281662A (ja) * 1989-04-21 1990-11-19 Mitsubishi Electric Corp 半導体装置
US5262339A (en) * 1989-06-12 1993-11-16 Hitachi, Ltd. Method of manufacturing a power semiconductor device using implants and solid diffusion source
IT1236994B (it) * 1989-12-29 1993-05-12 Sgs Thomson Microelectronics Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti
JP2672694B2 (ja) * 1990-07-13 1997-11-05 松下電子工業株式会社 Ｍｏｓｆｅｔ
US5202276A (en) * 1990-08-20 1993-04-13 Texas Instruments Incorporated Method of forming a low on-resistance DMOS vertical transistor structure
JPH04152536A (ja) * 1990-10-16 1992-05-26 Fuji Electric Co Ltd Ｍｉｓ型半導体装置の製造方法
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor
IT1252625B (it) * 1991-12-05 1995-06-19 Cons Ric Microelettronica Processo di fabbricazione di transistors a effetto di campo con gate isolato (igfet) a bassa densita' di corto circuiti tra gate e source e dispositivi con esso ottenuti
US5252848A (en) * 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
US5248627A (en) * 1992-03-20 1993-09-28 Siliconix Incorporated Threshold adjustment in fabricating vertical dmos devices
JP2900698B2 (ja) * 1992-05-07 1999-06-02 日本電気株式会社 絶縁形電界効果トランジスタの製造方法
US5631177A (en) * 1992-12-07 1997-05-20 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing integrated circuit with power field effect transistors
US5369045A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method for forming a self-aligned lateral DMOS transistor
US5397715A (en) * 1993-10-21 1995-03-14 Micrel, Incorporated MOS transistor having increased gate-drain capacitance
DE69434937D1 (de) * 1994-06-23 2007-04-19 St Microelectronics Srl Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
JP3586332B2 (ja) * 1995-02-28 2004-11-10 新日本製鐵株式会社 不揮発性半導体記憶装置及びその製造方法
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
JP3949193B2 (ja) * 1996-08-13 2007-07-25 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP4014676B2 (ja) 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
KR100198634B1 (ko) 1996-09-07 1999-06-15 구본준 반도체 소자의 배선구조 및 제조방법
US5879994A (en) * 1997-04-15 1999-03-09 National Semiconductor Corporation Self-aligned method of fabricating terrace gate DMOS transistor
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
JP3283458B2 (ja) * 1997-12-19 2002-05-20 セイコーインスツルメンツ株式会社 半導体装置の製造方法
JP4310657B2 (ja) * 2006-05-26 2009-08-12 セイコーエプソン株式会社 光素子
CN109119483A (zh) * 2018-11-05 2019-01-01 深圳市鹏朗贸易有限责任公司 一种晶体管及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2417853A1 (fr) * 1978-02-17 1979-09-14 Thomson Csf Procede de realisation d'un transistor de type mos et transistor realise selon ce procede
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
US4389255A (en) * 1980-01-14 1983-06-21 Burroughs Corporation Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
US4471524A (en) * 1982-06-01 1984-09-18 At&T Bell Laboratories Method for manufacturing an insulated gate field effect transistor device
JPS58216466A (ja) * 1982-06-11 1983-12-16 Toshiba Corp 絶縁ゲ−ト型ｆｅｔの製造方法
JPS5933860A (ja) * 1982-08-19 1984-02-23 Toshiba Corp 半導体装置およびその製造方法
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
US4546535A (en) * 1983-12-12 1985-10-15 International Business Machines Corporation Method of making submicron FET structure
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device

Also Published As

Publication number Publication date
EP0179407A2 (en) 1986-04-30
US4757032A (en) 1988-07-12
EP0179407A3 (en) 1988-02-10
DE3587231D1 (de) 1993-05-06
IT8423302A0 (it) 1984-10-25
JPS61102782A (ja) 1986-05-21
EP0179407B1 (en) 1993-03-31
DE3587231T2 (de) 1993-07-08

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Effective date: 19971030