IT1243934B - Circuito integrato ad alta tensione. - Google Patents

Circuito integrato ad alta tensione.

Info

Publication number
IT1243934B
IT1243934B IT02220190A IT2220190A IT1243934B IT 1243934 B IT1243934 B IT 1243934B IT 02220190 A IT02220190 A IT 02220190A IT 2220190 A IT2220190 A IT 2220190A IT 1243934 B IT1243934 B IT 1243934B
Authority
IT
Italy
Prior art keywords
integrated circuit
high voltage
voltage integrated
circuit
voltage
Prior art date
Application number
IT02220190A
Other languages
English (en)
Other versions
IT9022201A1 (it
IT9022201A0 (it
Inventor
Imre Keri
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of IT9022201A0 publication Critical patent/IT9022201A0/it
Publication of IT9022201A1 publication Critical patent/IT9022201A1/it
Application granted granted Critical
Publication of IT1243934B publication Critical patent/IT1243934B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
IT02220190A 1989-12-06 1990-11-27 Circuito integrato ad alta tensione. IT1243934B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8904120A SE465193B (sv) 1989-12-06 1989-12-06 Foer hoegspaenning avsedd ic-krets

Publications (3)

Publication Number Publication Date
IT9022201A0 IT9022201A0 (it) 1990-11-27
IT9022201A1 IT9022201A1 (it) 1991-06-07
IT1243934B true IT1243934B (it) 1994-06-28

Family

ID=20377705

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02220190A IT1243934B (it) 1989-12-06 1990-11-27 Circuito integrato ad alta tensione.

Country Status (5)

Country Link
US (1) US5861656A (it)
KR (1) KR960001614B1 (it)
GB (1) GB2238910B (it)
IT (1) IT1243934B (it)
SE (1) SE465193B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1026732A1 (en) * 1999-02-05 2000-08-09 Motorola, Inc. A method of forming a high voltage semiconductor device
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
JP2003229502A (ja) * 2002-02-01 2003-08-15 Mitsubishi Electric Corp 半導体装置
US6683329B2 (en) * 2002-02-28 2004-01-27 Oki Electric Industry Co., Ltd. Semiconductor device with slot above guard ring

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
JPS4836598B1 (it) * 1969-09-05 1973-11-06
JPS4914390B1 (it) * 1969-10-29 1974-04-06
JPS501872B1 (it) * 1970-01-30 1975-01-22
JPS4940394B1 (it) * 1970-08-28 1974-11-01
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
JPS6066444A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPH01184942A (ja) * 1988-01-20 1989-07-24 Toshiba Corp トリミング素子とその電気短絡方法
JPH0237776A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
IT9022201A1 (it) 1991-06-07
KR960001614B1 (ko) 1996-02-02
SE465193B (sv) 1991-08-05
GB2238910B (en) 1993-08-11
SE8904120D0 (sv) 1989-12-06
GB2238910A (en) 1991-06-12
IT9022201A0 (it) 1990-11-27
US5861656A (en) 1999-01-19
SE8904120L (sv) 1991-06-07
GB9024952D0 (en) 1991-01-02
KR920000146A (ko) 1992-01-10

Similar Documents

Publication Publication Date Title
DE59005864D1 (de) Spannungsvervielfacherschaltung.
DE69100052D1 (de) Integrierte schaltung fuer verbesserten zugang.
IT1216464B (it) Dispositivo semiconduttore ad alta tensione di rottura.
MX9100337A (es) Microfusible de alta capacidad al rompimiento
IT1225607B (it) Circuito logico cmos per alta tensione
DE3788971D1 (de) Spannungsvergleichsschaltung.
IT1240754B (it) Circuito misuratore di differenza di tensione.
IT1244339B (it) Circuito interfaccia a doppia sorgente di tensione
DE69029468D1 (de) Integrierte Schaltungsanordnung
IT8622720A0 (it) Circuito limitatore di tensione.
IT1243934B (it) Circuito integrato ad alta tensione.
DE69027831D1 (de) Integrierte MOS-Schaltung
IT1227488B (it) Circuito di riferimento di tensione ad andamento in temperatura linearizzato.
DE69023358D1 (de) Logische Schaltung.
DE69005649D1 (de) Spannungsgeneratorschaltung.
DE69025015D1 (de) Spannungspegelverschiebungsschaltung
ITRM920026A1 (it) Circuito di generazione di tensione di riferimento.
DE59106008D1 (de) Hochspannungsgerät.
IT9067404A0 (it) circuito
DE59006579D1 (de) Integrierte Begrenzerschaltung für Wechselspannungen.
DE59108939D1 (de) Hochspannungsbauelement
IT8820349A0 (it) Circuito integrato per alta tensione con isolamento a giunzione.
IT8768029A0 (it) Disgiuntore ad alta tensione a gasdielettrico con resistenza di chiusura
DE69018859D1 (de) Spannungsabfühlschaltung.
IT1210547B (it) Trasformatore per alta tensione.

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971103