IT1255813B - Circuito generatore di tensione interna - Google Patents

Circuito generatore di tensione interna

Info

Publication number
IT1255813B
IT1255813B ITMI921963A ITMI921963A IT1255813B IT 1255813 B IT1255813 B IT 1255813B IT MI921963 A ITMI921963 A IT MI921963A IT MI921963 A ITMI921963 A IT MI921963A IT 1255813 B IT1255813 B IT 1255813B
Authority
IT
Italy
Prior art keywords
voltage
control
circuit
internal
control circuit
Prior art date
Application number
ITMI921963A
Other languages
English (en)
Inventor
Yong-Ho Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921963A0 publication Critical patent/ITMI921963A0/it
Publication of ITMI921963A1 publication Critical patent/ITMI921963A1/it
Application granted granted Critical
Publication of IT1255813B publication Critical patent/IT1255813B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

E' descritto un circuito per generare una data tensione interna applicabile agli elementi di memoria di una piastrina di semiconduttore comprendente un circuito generatore di tensione di riferimento per generare una tensione di riferimento VREF, un amplificatore differenziale 300 per ricevere la tensione di riferimento e la tensione interna int.Vcc, un circuito di comando 50 per produrre la tensione interna sotto il controllo dell'amplificatore differenziale, ed un circuito 200 di controllo del circuito di comando per controllare il segnale di porta del circuito di comando o pilotaggio 50 in modo da far si che il circuito di comando 50 abbia a produrre la tensione interna int.Vcc del livello di tensione di riferimento o di tensione di sorgente esterna rispettivamente in un primo stato della tensione esterna inferiore a 6V ed un secondo stato della tensione esterna superiore a 6V.
ITMI921963A 1991-08-19 1992-08-07 Circuito generatore di tensione interna IT1255813B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014272A KR940008286B1 (ko) 1991-08-19 1991-08-19 내부전원발생회로

Publications (3)

Publication Number Publication Date
ITMI921963A0 ITMI921963A0 (it) 1992-08-07
ITMI921963A1 ITMI921963A1 (it) 1994-02-07
IT1255813B true IT1255813B (it) 1995-11-16

Family

ID=19318758

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921963A IT1255813B (it) 1991-08-19 1992-08-07 Circuito generatore di tensione interna

Country Status (8)

Country Link
US (1) US5349559A (it)
JP (1) JP2662345B2 (it)
KR (1) KR940008286B1 (it)
DE (1) DE4226047C2 (it)
FR (1) FR2680585B1 (it)
GB (1) GB2259575B (it)
IT (1) IT1255813B (it)
TW (1) TW225060B (it)

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Also Published As

Publication number Publication date
JP2662345B2 (ja) 1997-10-08
FR2680585B1 (fr) 1994-03-11
GB2259575B (en) 1995-08-09
JPH06295585A (ja) 1994-10-21
KR930005027A (ko) 1993-03-23
GB9216841D0 (en) 1992-09-23
ITMI921963A0 (it) 1992-08-07
KR940008286B1 (ko) 1994-09-09
FR2680585A1 (fr) 1993-02-26
DE4226047C2 (de) 1994-10-06
ITMI921963A1 (it) 1994-02-07
TW225060B (it) 1994-06-11
GB2259575A (en) 1993-03-17
DE4226047A1 (de) 1993-02-25
US5349559A (en) 1994-09-20

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