IT1255897B - Dispositivo a semiconduttore e procedimento per la sua fabbricazione - Google Patents

Dispositivo a semiconduttore e procedimento per la sua fabbricazione

Info

Publication number
IT1255897B
IT1255897B ITMI922403A ITMI922403A IT1255897B IT 1255897 B IT1255897 B IT 1255897B IT MI922403 A ITMI922403 A IT MI922403A IT MI922403 A ITMI922403 A IT MI922403A IT 1255897 B IT1255897 B IT 1255897B
Authority
IT
Italy
Prior art keywords
type
concentration
well
peaks
impurities
Prior art date
Application number
ITMI922403A
Other languages
English (en)
Inventor
Yoshinori Okumura
Hideaki Arima
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI922403A0 publication Critical patent/ITMI922403A0/it
Publication of ITMI922403A1 publication Critical patent/ITMI922403A1/it
Application granted granted Critical
Publication of IT1255897B publication Critical patent/IT1255897B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

Una zona profonda o "well" (5) di tipo n e un well (6) di tipo p sono formati in un substrato (1) di silicio. Il well (5) di tipo n a picchi (51, 52) e (53a) di concentrazione di impurità di tipo n e un picco (53b) di concentrazione di impurità di tipo p. Il well (6) di tipo p ha picchi (61, 62) e (63) di concentrazione di tipo p. I picchi (51) e (61) di concentrazione di impurità serventi come regioni di arresto di canale per isolare elementi esistono solamente in prossimità della superficie inferiore di una pellicola d'ossido isolante (2) ma non in regioni di elementi.
ITMI922403A 1991-10-22 1992-10-20 Dispositivo a semiconduttore e procedimento per la sua fabbricazione IT1255897B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27414291 1991-10-22
JP4195567A JP2851753B2 (ja) 1991-10-22 1992-07-22 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
ITMI922403A0 ITMI922403A0 (it) 1992-10-20
ITMI922403A1 ITMI922403A1 (it) 1994-04-20
IT1255897B true IT1255897B (it) 1995-11-17

Family

ID=26509207

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922403A IT1255897B (it) 1991-10-22 1992-10-20 Dispositivo a semiconduttore e procedimento per la sua fabbricazione

Country Status (4)

Country Link
US (1) US5763921A (it)
JP (1) JP2851753B2 (it)
DE (1) DE4233236C2 (it)
IT (1) IT1255897B (it)

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US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
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US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8377783B2 (en) 2010-09-30 2013-02-19 Suvolta, Inc. Method for reducing punch-through in a transistor device
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
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US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
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US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
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US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
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US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
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US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
JP6242678B2 (ja) * 2013-12-25 2017-12-06 住友化学株式会社 窒化物半導体素子及びその製造方法
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
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Also Published As

Publication number Publication date
DE4233236C2 (de) 1995-09-14
US5763921A (en) 1998-06-09
ITMI922403A0 (it) 1992-10-20
JP2851753B2 (ja) 1999-01-27
ITMI922403A1 (it) 1994-04-20
DE4233236A1 (de) 1993-04-29
JPH05190781A (ja) 1993-07-30

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