IT1255933B - Circuito di ridonanza di colonna per un dispositivo di memoria a semiconduttore. - Google Patents

Circuito di ridonanza di colonna per un dispositivo di memoria a semiconduttore.

Info

Publication number
IT1255933B
IT1255933B ITMI922474A ITMI922474A IT1255933B IT 1255933 B IT1255933 B IT 1255933B IT MI922474 A ITMI922474 A IT MI922474A IT MI922474 A ITMI922474 A IT MI922474A IT 1255933 B IT1255933 B IT 1255933B
Authority
IT
Italy
Prior art keywords
control circuit
fuse
column
receiving
memory device
Prior art date
Application number
ITMI922474A
Other languages
English (en)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI922474A0 publication Critical patent/ITMI922474A0/it
Publication of ITMI922474A1 publication Critical patent/ITMI922474A1/it
Application granted granted Critical
Publication of IT1255933B publication Critical patent/IT1255933B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

Un dispositivo di memoria a semiconduttore comprende un circuito di ridondanza di colonna includente un circuito di controllo ridondante di colonna per la ricezione di un segnale di indirizzo di riga e un blocco fusibili per la ricezione del segnale di uscita del circuito di controllo ridondante di colonna ed un circuito di controllo di selezione di blocco con un ingresso per ricevere il segnale di uscita del circuito di controllo ridondante di colonna ed una uscita connessa con la pluralità di circuiti a fusibile, il circuito di controllo di selezione comprendendo una pluralità di circuiti a fusibile ognuno avente almeno un fusibile connesso ad una data tensione statica, per cui una delle colonne connessa con una normale linea di selezione di colonna che si guasta è sostituita da una delle colonne di una matrice di celle di ricambio sotto la funzione di riparazione del circuito di controllo della selezione del blocco. La tensione statica è una tensione sorgente fornita al chip. La tensione statica data è per rendere inefficace uno specifico ingresso di segnale di indirizzo ai circuiti e fusibile.
ITMI922474A 1992-05-06 1992-10-28 Circuito di ridonanza di colonna per un dispositivo di memoria a semiconduttore. IT1255933B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920007621A KR950000275B1 (ko) 1992-05-06 1992-05-06 반도체 메모리 장치의 컬럼 리던던시

Publications (3)

Publication Number Publication Date
ITMI922474A0 ITMI922474A0 (it) 1992-10-28
ITMI922474A1 ITMI922474A1 (it) 1994-04-28
IT1255933B true IT1255933B (it) 1995-11-17

Family

ID=19332732

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922474A IT1255933B (it) 1992-05-06 1992-10-28 Circuito di ridonanza di colonna per un dispositivo di memoria a semiconduttore.

Country Status (8)

Country Link
US (1) US5325334A (it)
JP (1) JP2555252B2 (it)
KR (1) KR950000275B1 (it)
DE (1) DE4236099C2 (it)
FR (1) FR2691000B1 (it)
GB (1) GB2266795B (it)
IT (1) IT1255933B (it)
TW (1) TW296838U (it)

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Also Published As

Publication number Publication date
DE4236099A1 (de) 1993-11-11
US5325334A (en) 1994-06-28
ITMI922474A1 (it) 1994-04-28
JP2555252B2 (ja) 1996-11-20
KR930024021A (ko) 1993-12-21
TW296838U (en) 1997-01-21
GB2266795B (en) 1996-06-05
GB2266795A (en) 1993-11-10
FR2691000B1 (fr) 1996-05-24
JPH0660690A (ja) 1994-03-04
FR2691000A1 (fr) 1993-11-12
GB9222905D0 (en) 1992-12-16
KR950000275B1 (ko) 1995-01-12
ITMI922474A0 (it) 1992-10-28
DE4236099C2 (de) 2001-01-11

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Effective date: 19971028