IT1259021B - Dram comprendente un condensatore di tipo impilato avente una parte sporgente verticalmente e procedimento per fabbricare la medesima - Google Patents

Dram comprendente un condensatore di tipo impilato avente una parte sporgente verticalmente e procedimento per fabbricare la medesima

Info

Publication number
IT1259021B
IT1259021B ITMI920773A ITMI920773A IT1259021B IT 1259021 B IT1259021 B IT 1259021B IT MI920773 A ITMI920773 A IT MI920773A IT MI920773 A ITMI920773 A IT MI920773A IT 1259021 B IT1259021 B IT 1259021B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
same
projecting part
type capacitor
Prior art date
Application number
ITMI920773A
Other languages
English (en)
Inventor
Yoshinori Okumura
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI920773A0 publication Critical patent/ITMI920773A0/it
Publication of ITMI920773A1 publication Critical patent/ITMI920773A1/it
Application granted granted Critical
Publication of IT1259021B publication Critical patent/IT1259021B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un nodo d'immagazzinamento (11) di un condensatore impilato (10) in una DRAM comprende una prima parte (11a) collegata ad una regione di sorgente/pozzo ed una seconda parte (11b) sporgente verso l'alto da un substrato (1) in una sagoma di parete verticale. La seconda parte include una parte concava nella parte interna che è rimossa mediante incisione. Gradini sono formati sulle superfici periferiche interna ed esterna della parte di parete verticale. I gradini sono formati mediante un procedimento d'autoallineamento impiegando uno strato isolante (112a) di parete laterale formato mediante incisione anisotropa. La capacità del condensatore è aumentata formando gradini sulla superficie del nodo d'immagazzi-namento.
ITMI920773A 1991-04-01 1992-03-31 Dram comprendente un condensatore di tipo impilato avente una parte sporgente verticalmente e procedimento per fabbricare la medesima IT1259021B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3068638A JP2689031B2 (ja) 1991-04-01 1991-04-01 半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
ITMI920773A0 ITMI920773A0 (it) 1992-03-31
ITMI920773A1 ITMI920773A1 (it) 1993-10-01
IT1259021B true IT1259021B (it) 1996-03-11

Family

ID=13379478

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI920773A IT1259021B (it) 1991-04-01 1992-03-31 Dram comprendente un condensatore di tipo impilato avente una parte sporgente verticalmente e procedimento per fabbricare la medesima

Country Status (5)

Country Link
US (2) US5280444A (it)
JP (1) JP2689031B2 (it)
KR (1) KR970000718B1 (it)
DE (1) DE4210855C2 (it)
IT (1) IT1259021B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2827579B2 (ja) * 1991-06-11 1998-11-25 日本電気株式会社 半導体メモリセルとその形成方法
US5459341A (en) * 1993-02-12 1995-10-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
KR970000977B1 (ko) * 1993-05-21 1997-01-21 현대전자산업 주식회사 반도체 소자의 캐패시터 제조방법
KR0168346B1 (ko) * 1994-12-29 1998-12-15 김광호 고유전율 재료를 이용한 커패시터 및 그 제조방법
JPH08250600A (ja) * 1995-03-08 1996-09-27 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100207462B1 (ko) * 1996-02-26 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
US5744387A (en) * 1997-03-07 1998-04-28 Vanguard International Semiconductor Corporation Method for fabricating dynamic random access memory with a flat topography and fewer photomasks
US5827766A (en) * 1997-12-11 1998-10-27 Industrial Technology Research Institute Method for fabricating cylindrical capacitor for a memory cell
KR100289353B1 (ko) * 1998-09-25 2001-05-02 이덕수 헤어 클립
DE10010288C1 (de) * 2000-02-25 2001-09-20 Infineon Technologies Ag Verfahren zur Herstellung einer ferroelektrischen Kondensatoranordnung
KR100398046B1 (ko) * 2001-08-08 2003-09-19 한국전자통신연구원 반도체 소자의 금속배선 형성 방법
US6828278B2 (en) * 2003-03-24 2004-12-07 E.I. Du Pont De Nemours And Company Production of N-aryl-2-lactam and N-cycloalkyl-2-lactam by reductive amination of lactones with arly amines
JP5000084B2 (ja) * 2003-08-13 2012-08-15 三星電子株式会社 導電パッドのシリンダースタックキャパシタにおけるストレージノード、半導体素子及び半導体素子の製造方法
KR100546363B1 (ko) * 2003-08-13 2006-01-26 삼성전자주식회사 콘케이브 형태의 스토리지 노드 전극을 갖는 반도체메모리 소자 및 그 제조방법
US7250371B2 (en) * 2003-08-26 2007-07-31 Lam Research Corporation Reduction of feature critical dimensions
KR100599091B1 (ko) * 2004-10-06 2006-07-12 삼성전자주식회사 캐패시터 제조 방법
JP5579362B2 (ja) * 2007-10-19 2014-08-27 ピーエスフォー ルクスコ エスエイアールエル 縦型相変化メモリ装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602784B2 (ja) * 1982-12-20 1985-01-23 富士通株式会社 半導体記憶装置
JPS6055637B2 (ja) * 1983-06-14 1985-12-05 東洋リノリユ−ム株式会社 床材の裏面処理方法
JPS6155258A (ja) * 1984-08-27 1986-03-19 ダスキンフランチヤイズ株式会社 脱水装置
JPS63208263A (ja) * 1987-02-25 1988-08-29 Toshiba Corp 半導体装置
JP2838412B2 (ja) * 1988-06-10 1998-12-16 三菱電機株式会社 半導体記憶装置のキャパシタおよびその製造方法
DE3918924C2 (de) * 1988-06-10 1996-03-21 Mitsubishi Electric Corp Herstellungsverfahren für eine Halbleiterspeichereinrichtung
JPH0276257A (ja) * 1988-09-12 1990-03-15 Sharp Corp 半導体メモリ素子
JPH02122560A (ja) * 1988-10-31 1990-05-10 Nec Corp 半導体記憶装置
JPH02260454A (ja) * 1989-03-30 1990-10-23 Sony Corp メモリ装置の製造方法
JP2509706B2 (ja) * 1989-08-18 1996-06-26 株式会社東芝 マスクｒｏｍの製造方法
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
JPH04137759A (ja) * 1990-09-28 1992-05-12 Sanyo Electric Co Ltd 半導体記憶装置
KR930006730B1 (ko) * 1991-03-20 1993-07-23 삼성전자 주식회사 고집적 반도체 메모리장치의 커패시터 제조방법

Also Published As

Publication number Publication date
ITMI920773A1 (it) 1993-10-01
US5280444A (en) 1994-01-18
KR920020728A (ko) 1992-11-21
US5393688A (en) 1995-02-28
DE4210855A1 (de) 1992-10-08
KR970000718B1 (ko) 1997-01-18
JP2689031B2 (ja) 1997-12-10
DE4210855C2 (de) 1995-12-14
ITMI920773A0 (it) 1992-03-31
JPH04304670A (ja) 1992-10-28

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Legal Events

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0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329