IT1320699B1 - Memoria non volatile multilivello a ingombro ridotto e a basso consumo. - Google Patents

Memoria non volatile multilivello a ingombro ridotto e a basso consumo.

Info

Publication number
IT1320699B1
IT1320699B1 IT2000TO000936A ITTO20000936A IT1320699B1 IT 1320699 B1 IT1320699 B1 IT 1320699B1 IT 2000TO000936 A IT2000TO000936 A IT 2000TO000936A IT TO20000936 A ITTO20000936 A IT TO20000936A IT 1320699 B1 IT1320699 B1 IT 1320699B1
Authority
IT
Italy
Prior art keywords
volatile memory
low consumption
reduced space
level non
level
Prior art date
Application number
IT2000TO000936A
Other languages
English (en)
Inventor
Rino Micheloni
Stefano Gregori
Osama Khouri
Guido Torelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2000TO000936A priority Critical patent/IT1320699B1/it
Publication of ITTO20000936A0 publication Critical patent/ITTO20000936A0/it
Priority to US09/972,726 priority patent/US6542404B2/en
Publication of ITTO20000936A1 publication Critical patent/ITTO20000936A1/it
Application granted granted Critical
Publication of IT1320699B1 publication Critical patent/IT1320699B1/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Analogue/Digital Conversion (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
IT2000TO000936A 2000-10-06 2000-10-06 Memoria non volatile multilivello a ingombro ridotto e a basso consumo. IT1320699B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2000TO000936A IT1320699B1 (it) 2000-10-06 2000-10-06 Memoria non volatile multilivello a ingombro ridotto e a basso consumo.
US09/972,726 US6542404B2 (en) 2000-10-06 2001-10-04 Small size, low consumption, multilevel nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000TO000936A IT1320699B1 (it) 2000-10-06 2000-10-06 Memoria non volatile multilivello a ingombro ridotto e a basso consumo.

Publications (3)

Publication Number Publication Date
ITTO20000936A0 ITTO20000936A0 (it) 2000-10-06
ITTO20000936A1 ITTO20000936A1 (it) 2002-04-06
IT1320699B1 true IT1320699B1 (it) 2003-12-10

Family

ID=11458096

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000TO000936A IT1320699B1 (it) 2000-10-06 2000-10-06 Memoria non volatile multilivello a ingombro ridotto e a basso consumo.

Country Status (2)

Country Link
US (1) US6542404B2 (it)
IT (1) IT1320699B1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20050798A1 (it) 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
KR100824141B1 (ko) * 2006-09-29 2008-04-21 주식회사 하이닉스반도체 반도체 메모리 소자
US8085596B2 (en) * 2007-09-11 2011-12-27 Micron Technology, Inc. Reducing noise in semiconductor devices
TWI739494B (zh) * 2020-06-29 2021-09-11 華邦電子股份有限公司 感測放大裝置
US11404110B2 (en) 2020-07-14 2022-08-02 Winbond Electronics Corp. Sense amplification device in memory
US12142342B2 (en) * 2022-02-21 2024-11-12 Industrial Technology Research Institute Memory circuit with sense amplifier calibration mechanism

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3572179B2 (ja) * 1997-10-07 2004-09-29 シャープ株式会社 不揮発性半導体記憶装置およびその書き込み方法

Also Published As

Publication number Publication date
US6542404B2 (en) 2003-04-01
ITTO20000936A1 (it) 2002-04-06
US20020048187A1 (en) 2002-04-25
ITTO20000936A0 (it) 2000-10-06

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