ITRM20020465A0 - Memoria cam non volatile di tipo nor. - Google Patents

Memoria cam non volatile di tipo nor.

Info

Publication number
ITRM20020465A0
ITRM20020465A0 IT2002RM000465A ITRM20020465A ITRM20020465A0 IT RM20020465 A0 ITRM20020465 A0 IT RM20020465A0 IT 2002RM000465 A IT2002RM000465 A IT 2002RM000465A IT RM20020465 A ITRM20020465 A IT RM20020465A IT RM20020465 A0 ITRM20020465 A0 IT RM20020465A0
Authority
IT
Italy
Prior art keywords
type non
cam memory
volatile cam
volatile
memory
Prior art date
Application number
IT2002RM000465A
Other languages
English (en)
Inventor
Sandre Guido De
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000465A priority Critical patent/ITRM20020465A1/it
Publication of ITRM20020465A0 publication Critical patent/ITRM20020465A0/it
Priority to US10/664,794 priority patent/US6944038B2/en
Publication of ITRM20020465A1 publication Critical patent/ITRM20020465A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
IT000465A 2002-09-20 2002-09-20 Memoria cam non volatile di tipo nor. ITRM20020465A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT000465A ITRM20020465A1 (it) 2002-09-20 2002-09-20 Memoria cam non volatile di tipo nor.
US10/664,794 US6944038B2 (en) 2002-09-20 2003-09-19 Non-volatile NOR-type CAM memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000465A ITRM20020465A1 (it) 2002-09-20 2002-09-20 Memoria cam non volatile di tipo nor.

Publications (2)

Publication Number Publication Date
ITRM20020465A0 true ITRM20020465A0 (it) 2002-09-20
ITRM20020465A1 ITRM20020465A1 (it) 2004-03-21

Family

ID=11456483

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000465A ITRM20020465A1 (it) 2002-09-20 2002-09-20 Memoria cam non volatile di tipo nor.

Country Status (2)

Country Link
US (1) US6944038B2 (it)
IT (1) ITRM20020465A1 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20020493A1 (it) 2002-10-02 2004-04-03 St Microelectronics Srl Memoria cam non volatile di tipo and.
US7567448B2 (en) 2007-01-05 2009-07-28 Atmel Corporation Content addressable memory cell having a single floating gate transistor
US8169808B2 (en) 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
US9502113B2 (en) * 2015-01-14 2016-11-22 Flashsilicon Incorporated Configurable non-volatile content addressable memory
CN106205685B (zh) * 2015-05-06 2018-08-28 闪矽公司 可规划的非易失性内容可定址存储器及其操作方法
US20240355394A1 (en) * 2021-12-22 2024-10-24 Macronix International Co., Ltd. Memory device and operation method thereof
TWI851006B (zh) * 2023-02-06 2024-08-01 旺宏電子股份有限公司 動態記憶體內搜尋裝置及其操作方法
US12159671B2 (en) 2023-02-06 2024-12-03 Macronix International Co., Ltd. In-dynamic memory search device and operation method thereof
TWI886906B (zh) * 2024-04-16 2025-06-11 旺宏電子股份有限公司 閘控閘流體以及內容可定址記憶體陣列
US12603131B2 (en) 2024-04-16 2026-04-14 Macronix International Co., Ltd. Gate-controlled thyristor and CAM array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051948A (en) * 1988-02-23 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Content addressable memory device
JPH01307095A (ja) * 1988-06-01 1989-12-12 Mitsubishi Electric Corp 不揮発性cam
US6005790A (en) * 1998-12-22 1999-12-21 Stmicroelectronics, Inc. Floating gate content addressable memory
US6373739B1 (en) * 2000-12-06 2002-04-16 Integrated Device Technology, Inc. Quad CAM cell with minimum cell size
JP5072145B2 (ja) * 2001-04-05 2012-11-14 富士通セミコンダクター株式会社 連想記憶装置

Also Published As

Publication number Publication date
US20040130925A1 (en) 2004-07-08
US6944038B2 (en) 2005-09-13
ITRM20020465A1 (it) 2004-03-21

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