IT7824657A0 - Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo. - Google Patents
Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo.Info
- Publication number
- IT7824657A0 IT7824657A0 IT7824657A IT2465778A IT7824657A0 IT 7824657 A0 IT7824657 A0 IT 7824657A0 IT 7824657 A IT7824657 A IT 7824657A IT 2465778 A IT2465778 A IT 2465778A IT 7824657 A0 IT7824657 A0 IT 7824657A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- aid
- manufacture
- device manufactured
- manufactured
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/973—Substrate orientation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7706802A NL7706802A (nl) | 1977-06-21 | 1977-06-21 | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7824657A0 true IT7824657A0 (it) | 1978-06-16 |
| IT1096489B IT1096489B (it) | 1985-08-26 |
Family
ID=19828757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24657/78A IT1096489B (it) | 1977-06-21 | 1978-06-16 | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4293588A (it) |
| JP (1) | JPS548468A (it) |
| AU (1) | AU518291B2 (it) |
| CA (1) | CA1097432A (it) |
| CH (1) | CH628756A5 (it) |
| DE (1) | DE2826376A1 (it) |
| FR (1) | FR2440076A1 (it) |
| GB (1) | GB2000372B (it) |
| IT (1) | IT1096489B (it) |
| NL (1) | NL7706802A (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713744A (en) * | 1980-06-30 | 1982-01-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4337132A (en) * | 1980-11-14 | 1982-06-29 | Rockwell International Corporation | Ion etching process with minimized redeposition |
| US4515652A (en) * | 1984-03-20 | 1985-05-07 | Harris Corporation | Plasma sculpturing with a non-planar sacrificial layer |
| US4649638A (en) * | 1985-04-17 | 1987-03-17 | International Business Machines Corp. | Construction of short-length electrode in semiconductor device |
| DE3603725C2 (de) * | 1986-02-06 | 1994-08-18 | Siemens Ag | Verfahren zur Strukturierung von Siliciumcarbid |
| US5006480A (en) * | 1988-08-08 | 1991-04-09 | Hughes Aircraft Company | Metal gate capacitor fabricated with a silicon gate MOS process |
| US4968641A (en) * | 1989-06-22 | 1990-11-06 | Alexander Kalnitsky | Method for formation of an isolating oxide layer |
| US5258333A (en) * | 1992-08-18 | 1993-11-02 | Intel Corporation | Composite dielectric for a semiconductor device and method of fabrication |
| DE29509545U1 (de) * | 1995-06-10 | 1995-09-21 | Voith Sulzer Papiermaschinen GmbH, 89522 Heidenheim | Walze mit Schwingungsdämpfer |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3479237A (en) * | 1966-04-08 | 1969-11-18 | Bell Telephone Labor Inc | Etch masks on semiconductor surfaces |
| US3472689A (en) * | 1967-01-19 | 1969-10-14 | Rca Corp | Vapor deposition of silicon-nitrogen insulating coatings |
| US3607480A (en) * | 1968-12-30 | 1971-09-21 | Texas Instruments Inc | Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide |
| US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
| US3867216A (en) * | 1972-05-12 | 1975-02-18 | Adir Jacob | Process and material for manufacturing semiconductor devices |
| US3966501A (en) * | 1973-03-23 | 1976-06-29 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
| GB1437112A (en) * | 1973-09-07 | 1976-05-26 | Mullard Ltd | Semiconductor device manufacture |
| DE2449731A1 (de) * | 1973-12-03 | 1975-06-05 | Hewlett Packard Co | Aetzverfahren |
| JPS51126077A (en) * | 1975-04-25 | 1976-11-02 | Hitachi Ltd | Manufacturing method of semi-conductor equpment |
| NL7506594A (nl) * | 1975-06-04 | 1976-12-07 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| JPS5246784A (en) * | 1975-10-11 | 1977-04-13 | Hitachi Ltd | Process for production of semiconductor device |
| US3997367A (en) * | 1975-11-20 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Method for making transistors |
| JPS5275989A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
-
1977
- 1977-06-21 NL NL7706802A patent/NL7706802A/xx not_active Application Discontinuation
-
1978
- 1978-06-15 CA CA305,562A patent/CA1097432A/en not_active Expired
- 1978-06-16 GB GB7827149A patent/GB2000372B/en not_active Expired
- 1978-06-16 DE DE19782826376 patent/DE2826376A1/de not_active Ceased
- 1978-06-16 IT IT24657/78A patent/IT1096489B/it active
- 1978-06-19 CH CH665178A patent/CH628756A5/de not_active IP Right Cessation
- 1978-06-19 JP JP7331978A patent/JPS548468A/ja active Granted
- 1978-06-19 AU AU37243/78A patent/AU518291B2/en not_active Expired
- 1978-06-20 FR FR7818372A patent/FR2440076A1/fr active Granted
-
1979
- 1979-08-30 US US06/071,226 patent/US4293588A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA1097432A (en) | 1981-03-10 |
| CH628756A5 (de) | 1982-03-15 |
| US4293588A (en) | 1981-10-06 |
| GB2000372B (en) | 1982-03-10 |
| DE2826376A1 (de) | 1979-01-11 |
| IT1096489B (it) | 1985-08-26 |
| NL7706802A (nl) | 1978-12-27 |
| GB2000372A (en) | 1979-01-04 |
| AU3724378A (en) | 1980-01-03 |
| JPS5653210B2 (it) | 1981-12-17 |
| AU518291B2 (en) | 1981-09-24 |
| FR2440076A1 (fr) | 1980-05-23 |
| JPS548468A (en) | 1979-01-22 |
| FR2440076B1 (it) | 1983-11-25 |
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