IT7829676A0 - Procedimento e gas per il trattamento di dispositivi semiconduttori. - Google Patents

Procedimento e gas per il trattamento di dispositivi semiconduttori.

Info

Publication number
IT7829676A0
IT7829676A0 IT7829676A IT2967678A IT7829676A0 IT 7829676 A0 IT7829676 A0 IT 7829676A0 IT 7829676 A IT7829676 A IT 7829676A IT 2967678 A IT2967678 A IT 2967678A IT 7829676 A0 IT7829676 A0 IT 7829676A0
Authority
IT
Italy
Prior art keywords
treatment
gas
semiconductor devices
semiconductor
devices
Prior art date
Application number
IT7829676A
Other languages
English (en)
Original Assignee
Dionex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dionex Corp filed Critical Dionex Corp
Publication of IT7829676A0 publication Critical patent/IT7829676A0/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
IT7829676A 1977-11-11 1978-11-10 Procedimento e gas per il trattamento di dispositivi semiconduttori. IT7829676A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/850,713 US4303467A (en) 1977-11-11 1977-11-11 Process and gas for treatment of semiconductor devices

Publications (1)

Publication Number Publication Date
IT7829676A0 true IT7829676A0 (it) 1978-11-10

Family

ID=25308913

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7829676A IT7829676A0 (it) 1977-11-11 1978-11-10 Procedimento e gas per il trattamento di dispositivi semiconduttori.

Country Status (8)

Country Link
US (1) US4303467A (it)
JP (1) JPS5489484A (it)
CA (1) CA1117400A (it)
DE (1) DE2848691A1 (it)
FR (1) FR2408913A1 (it)
GB (1) GB2008499B (it)
IT (1) IT7829676A0 (it)
NL (1) NL7811183A (it)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD150318A3 (de) * 1980-02-08 1981-08-26 Rainer Moeller Verfahren und rohrreaktor zur plasmachemischen dampfphasenabscheidung und zum plasmaaetzen
US4264409A (en) * 1980-03-17 1981-04-28 International Business Machines Corporation Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
US4550239A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device
US4550242A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device for batch treatment of workpieces
US4462882A (en) * 1983-01-03 1984-07-31 Massachusetts Institute Of Technology Selective etching of aluminum
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPS60240121A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 横型炉
GB8431422D0 (en) * 1984-12-13 1985-01-23 Standard Telephones Cables Ltd Plasma reactor vessel
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
US5362353A (en) * 1993-02-26 1994-11-08 Lsi Logic Corporation Faraday cage for barrel-style plasma etchers
US20040213368A1 (en) * 1995-09-11 2004-10-28 Norman Rostoker Fusion reactor that produces net power from the p-b11 reaction
US6465159B1 (en) * 1999-06-28 2002-10-15 Lam Research Corporation Method and apparatus for side wall passivation for organic etch
US6664740B2 (en) 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US9607719B2 (en) 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
SG10201704299XA (en) 2011-11-14 2017-06-29 Univ California Systems and methods for forming and maintaining a high performance frc
WO2015030761A1 (en) 2013-08-29 2015-03-05 Halliburton Energy Services, Inc. Methods and systems for generating reactive fluoride species from a gaseous precursor in a subterranean formation for stimulation thereof
UA125164C2 (uk) 2013-09-24 2022-01-26 ТАЄ Текнолоджіс, Інк. Системи і способи формування і підтримання високоефективної конфігурації з оберненим полем
HUE047712T2 (hu) 2014-10-13 2020-05-28 Tae Tech Inc Összeállítás sûrû toroidok egyesítésére és összenyomására
HRP20221278T1 (hr) 2014-10-30 2022-12-23 Tae Technologies, Inc. Sustavi za formiranje i održavanje frc visokih performansi
KR102598740B1 (ko) 2015-05-12 2023-11-03 티에이이 테크놀로지스, 인크. 원하지 않는 맴돌이 전류를 감소시키는 시스템 및 방법
MY191665A (en) 2015-11-13 2022-07-06 Tae Tech Inc Systems and methods for frc plasma position stability
CA3041826A1 (en) 2016-10-28 2018-05-03 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
WO2018085798A1 (en) 2016-11-04 2018-05-11 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc with multi-scaled capture type vacuum pumping
EP3716286B1 (en) 2016-11-15 2025-07-09 TAE Technologies, Inc. Systems for improved sustainment of a high performance frc and high harmonic fast wave electron heating in a high performance frc
JP6796519B2 (ja) * 2017-03-10 2020-12-09 東京エレクトロン株式会社 エッチング方法
WO2020037259A1 (en) * 2018-08-17 2020-02-20 Life Technologies Corporation Method of forming ion sensors
CN112585459B (zh) * 2018-08-17 2024-01-02 生命技术公司 形成离子传感器的方法
CN115380627A (zh) 2020-01-13 2022-11-22 阿尔法能源技术公司 用于经由球马克合并和中性束注入来形成和保持高能高温frc等离子体的系统和方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process

Also Published As

Publication number Publication date
CA1117400A (en) 1982-02-02
GB2008499B (en) 1982-07-28
NL7811183A (nl) 1979-05-15
JPS5489484A (en) 1979-07-16
GB2008499A (en) 1979-06-06
DE2848691A1 (de) 1979-05-17
US4303467A (en) 1981-12-01
FR2408913A1 (fr) 1979-06-08

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