IT7867314A0 - Dispositivo semiconduttore utilizzabile particolarmente come cella solare ed emettitore di luce - Google Patents

Dispositivo semiconduttore utilizzabile particolarmente come cella solare ed emettitore di luce

Info

Publication number
IT7867314A0
IT7867314A0 IT7867314A IT6731478A IT7867314A0 IT 7867314 A0 IT7867314 A0 IT 7867314A0 IT 7867314 A IT7867314 A IT 7867314A IT 6731478 A IT6731478 A IT 6731478A IT 7867314 A0 IT7867314 A0 IT 7867314A0
Authority
IT
Italy
Prior art keywords
semiconductor device
solar cell
light emitter
device particularly
particularly usable
Prior art date
Application number
IT7867314A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7867314A0 publication Critical patent/IT7867314A0/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
IT7867314A 1977-02-16 1978-02-15 Dispositivo semiconduttore utilizzabile particolarmente come cella solare ed emettitore di luce IT7867314A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/769,107 US4121238A (en) 1977-02-16 1977-02-16 Metal oxide/indium phosphide devices

Publications (1)

Publication Number Publication Date
IT7867314A0 true IT7867314A0 (it) 1978-02-15

Family

ID=25084478

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7867314A IT7867314A0 (it) 1977-02-16 1978-02-15 Dispositivo semiconduttore utilizzabile particolarmente come cella solare ed emettitore di luce

Country Status (12)

Country Link
US (1) US4121238A (it)
JP (1) JPS53102688A (it)
BE (1) BE863929A (it)
CA (1) CA1090456A (it)
DE (1) DE2805582A1 (it)
ES (1) ES467047A1 (it)
FR (1) FR2381393A1 (it)
GB (1) GB1547140A (it)
IL (1) IL54018A (it)
IT (1) IT7867314A0 (it)
NL (1) NL7801559A (it)
SE (1) SE433788B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
JPS55108781A (en) * 1979-02-15 1980-08-21 Fuji Xerox Co Ltd Light receiving element
US4291323A (en) * 1980-05-01 1981-09-22 Bell Telephone Laboratories, Incorporated Indium phosphide arsenide based devices
JPS6022381A (ja) * 1983-07-18 1985-02-04 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
IL84118A (en) * 1987-10-07 1991-03-10 Semiconductor Devices Tadiran Process for ii-vi compound epitaxy
US5105291A (en) * 1989-11-20 1992-04-14 Ricoh Company, Ltd. Liquid crystal display cell with electrodes of substantially amorphous metal oxide having low resistivity
JP2912506B2 (ja) * 1992-10-21 1999-06-28 シャープ株式会社 透明導電膜の形成方法
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
US4024558A (en) * 1974-03-27 1977-05-17 Innotech Corporation Photovoltaic heterojunction device employing a glassy amorphous material as an active layer
IL46896A (en) * 1974-03-27 1977-07-31 Innotech Corp Semiconductive device
US3978510A (en) * 1974-07-29 1976-08-31 Bell Telephone Laboratories, Incorporated Heterojunction photovoltaic devices employing i-iii-vi compounds

Also Published As

Publication number Publication date
BE863929A (fr) 1978-05-29
ES467047A1 (es) 1978-11-01
FR2381393B1 (it) 1982-04-16
SE7801408L (sv) 1978-08-17
JPS53102688A (en) 1978-09-07
GB1547140A (en) 1979-06-06
CA1090456A (en) 1980-11-25
IL54018A0 (en) 1978-04-30
DE2805582A1 (de) 1978-08-17
NL7801559A (nl) 1978-08-18
FR2381393A1 (fr) 1978-09-15
SE433788B (sv) 1984-06-12
US4121238A (en) 1978-10-17
IL54018A (en) 1980-06-30

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