NL7801559A - Metaaloxyde/indiumfosfide panelen. - Google Patents

Metaaloxyde/indiumfosfide panelen.

Info

Publication number
NL7801559A
NL7801559A NL7801559A NL7801559A NL7801559A NL 7801559 A NL7801559 A NL 7801559A NL 7801559 A NL7801559 A NL 7801559A NL 7801559 A NL7801559 A NL 7801559A NL 7801559 A NL7801559 A NL 7801559A
Authority
NL
Netherlands
Prior art keywords
panels
metal oxide
indium phosphide
phosphide
indium
Prior art date
Application number
NL7801559A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7801559A publication Critical patent/NL7801559A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/118Oxide films
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/12Photocathodes-Cs coated and solar cell
NL7801559A 1977-02-16 1978-02-10 Metaaloxyde/indiumfosfide panelen. NL7801559A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/769,107 US4121238A (en) 1977-02-16 1977-02-16 Metal oxide/indium phosphide devices

Publications (1)

Publication Number Publication Date
NL7801559A true NL7801559A (nl) 1978-08-18

Family

ID=25084478

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7801559A NL7801559A (nl) 1977-02-16 1978-02-10 Metaaloxyde/indiumfosfide panelen.

Country Status (12)

Country Link
US (1) US4121238A (it)
JP (1) JPS53102688A (it)
BE (1) BE863929A (it)
CA (1) CA1090456A (it)
DE (1) DE2805582A1 (it)
ES (1) ES467047A1 (it)
FR (1) FR2381393A1 (it)
GB (1) GB1547140A (it)
IL (1) IL54018A (it)
IT (1) IT7867314A0 (it)
NL (1) NL7801559A (it)
SE (1) SE433788B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
JPS55108781A (en) * 1979-02-15 1980-08-21 Fuji Xerox Co Ltd Light receiving element
US4291323A (en) * 1980-05-01 1981-09-22 Bell Telephone Laboratories, Incorporated Indium phosphide arsenide based devices
JPS6022381A (ja) * 1983-07-18 1985-02-04 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
IL84118A (en) * 1987-10-07 1991-03-10 Semiconductor Devices Tadiran Process for ii-vi compound epitaxy
US5105291A (en) * 1989-11-20 1992-04-14 Ricoh Company, Ltd. Liquid crystal display cell with electrodes of substantially amorphous metal oxide having low resistivity
JP2912506B2 (ja) * 1992-10-21 1999-06-28 シャープ株式会社 透明導電膜の形成方法
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
US4024558A (en) * 1974-03-27 1977-05-17 Innotech Corporation Photovoltaic heterojunction device employing a glassy amorphous material as an active layer
IL46896A (en) * 1974-03-27 1977-07-31 Innotech Corp Semiconductive device
US3978510A (en) * 1974-07-29 1976-08-31 Bell Telephone Laboratories, Incorporated Heterojunction photovoltaic devices employing i-iii-vi compounds

Also Published As

Publication number Publication date
BE863929A (fr) 1978-05-29
ES467047A1 (es) 1978-11-01
FR2381393B1 (it) 1982-04-16
SE7801408L (sv) 1978-08-17
JPS53102688A (en) 1978-09-07
GB1547140A (en) 1979-06-06
CA1090456A (en) 1980-11-25
IL54018A0 (en) 1978-04-30
DE2805582A1 (de) 1978-08-17
IT7867314A0 (it) 1978-02-15
FR2381393A1 (fr) 1978-09-15
SE433788B (sv) 1984-06-12
US4121238A (en) 1978-10-17
IL54018A (en) 1980-06-30

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed