IT7867634A0 - Procedimento e dispositivo a fasci elettronici per l esposizione distrati sensibili a radiazioni particolarmente per la produzione di circuiti integrati - Google Patents

Procedimento e dispositivo a fasci elettronici per l esposizione distrati sensibili a radiazioni particolarmente per la produzione di circuiti integrati

Info

Publication number
IT7867634A0
IT7867634A0 IT7867634A IT6763478A IT7867634A0 IT 7867634 A0 IT7867634 A0 IT 7867634A0 IT 7867634 A IT7867634 A IT 7867634A IT 6763478 A IT6763478 A IT 6763478A IT 7867634 A0 IT7867634 A0 IT 7867634A0
Authority
IT
Italy
Prior art keywords
distractions
exposing
sensitive
procedure
production
Prior art date
Application number
IT7867634A
Other languages
English (en)
Other versions
IT1107180B (it
Original Assignee
A New York Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by A New York Usa filed Critical A New York Usa
Publication of IT7867634A0 publication Critical patent/IT7867634A0/it
Application granted granted Critical
Publication of IT1107180B publication Critical patent/IT1107180B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT67634/78A 1977-03-23 1978-03-22 Procedimento e dispositivo a fasci elettronici per l'esposizione di strati sensibili a radiazioni particolarmente per la produzione di circuiti integrati IT1107180B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78035477A 1977-03-23 1977-03-23

Publications (2)

Publication Number Publication Date
IT7867634A0 true IT7867634A0 (it) 1978-03-22
IT1107180B IT1107180B (it) 1985-11-25

Family

ID=25119358

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67634/78A IT1107180B (it) 1977-03-23 1978-03-22 Procedimento e dispositivo a fasci elettronici per l'esposizione di strati sensibili a radiazioni particolarmente per la produzione di circuiti integrati

Country Status (7)

Country Link
US (1) US4153843A (it)
JP (1) JPS53117387A (it)
CA (1) CA1100237A (it)
DE (1) DE2811553A1 (it)
FR (1) FR2385222A1 (it)
GB (1) GB1596351A (it)
IT (1) IT1107180B (it)

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JPS5820098B2 (ja) * 1977-06-15 1983-04-21 株式会社日立製作所 電子線偏向走査装置
FR2443085A1 (fr) * 1978-07-24 1980-06-27 Thomson Csf Dispositif de microlithographie par bombardement electronique
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JP2901246B2 (ja) * 1988-03-30 1999-06-07 富士通株式会社 荷電粒子ビーム露光装置
US4980567A (en) * 1988-03-30 1990-12-25 Fujitsu Limited Charged particle beam exposure system using line beams
DE3825103A1 (de) * 1988-07-23 1990-01-25 Zeiss Carl Fa Verfahren zum beleuchten eines objektes in einem transmissions-elektronenmikroskop
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US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
KR950002578B1 (ko) * 1991-03-13 1995-03-23 후지쓰 가부시끼가이샤 전자빔 노광방법
JP3121098B2 (ja) * 1992-03-17 2000-12-25 富士通株式会社 荷電粒子ビーム露光の方法と装置
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JP3299632B2 (ja) * 1994-06-24 2002-07-08 株式会社日立製作所 電子線描画装置
JPH0915866A (ja) * 1995-06-30 1997-01-17 Nikon Corp 荷電粒子線によるパターン転写方法および転写装置
EP1369897A3 (en) 1996-03-04 2005-01-19 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
JP2914926B2 (ja) * 1996-12-09 1999-07-05 富士通株式会社 荷電粒子ビーム露光方法
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JPH10241615A (ja) * 1997-02-25 1998-09-11 Nikon Corp 電子線露光装置
US6157039A (en) * 1998-05-07 2000-12-05 Etec Systems, Inc. Charged particle beam illumination of blanking aperture array
AU4715300A (en) * 1999-05-03 2000-11-17 Etec Systems, Inc. Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
US20040051053A1 (en) * 2002-05-22 2004-03-18 Barletta William A. Universal pattern generator with multiplex addressing
AU2003276779A1 (en) * 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
US20060088952A1 (en) * 2004-01-21 2006-04-27 Groves James F Method and system for focused ion beam directed self-assembly of metal oxide island structures
DE102004052995A1 (de) * 2004-11-03 2006-05-11 Leica Microsystems Lithography Gmbh Vorrichtung zur Strukturierung eines Partikelstrahls
DE102004052994C5 (de) * 2004-11-03 2010-08-26 Vistec Electron Beam Gmbh Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung
DE102004055149B4 (de) * 2004-11-16 2007-07-19 Leica Microsystems Lithography Gmbh Vorrichtung und Verfahren zum Abbilden eines Mehrfach-Partikelstrahls auf ein Substrat
WO2007008792A2 (en) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
JP5087318B2 (ja) * 2007-05-30 2012-12-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
WO2019166331A2 (en) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
DE102019008249B3 (de) 2019-11-27 2020-11-19 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multistrahl-Ablenkeinrichtung und einem Strahlfänger, Verfahren zum Betreiben des Teilchenstrahl-Systems und zugehöriges Computerprogrammprodukt
KR102799604B1 (ko) 2020-02-04 2025-04-23 칼 짜이스 멀티셈 게엠베하 다중 빔 디지털 스캐닝 및 이미지 획득
JP7689139B2 (ja) 2020-03-12 2025-06-05 カール ツァイス マルティセム ゲゼルシヤフト ミット ベシュレンクテル ハフツング マルチビーム発生ユニットおよびマルチビーム偏向ユニットの特定の改善
DE102020107738B3 (de) 2020-03-20 2021-01-14 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren
DE102020123567B4 (de) 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System
TW202220012A (zh) 2020-09-30 2022-05-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 在可調工作距離附近具快速自動對焦之多重粒子束顯微鏡及相關方法
DE102021200799B3 (de) 2021-01-29 2022-03-31 Carl Zeiss Multisem Gmbh Verfahren mit verbesserter Fokuseinstellung unter Berücksichtigung eines Bildebenenkipps in einem Vielzahl-Teilchenstrahlmikroskop
TW202312205A (zh) 2021-05-27 2023-03-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 多重射束帶電粒子系統與在多重射束帶電粒子系統中控制工作距離的方法
DE102021116969B3 (de) 2021-07-01 2022-09-22 Carl Zeiss Multisem Gmbh Verfahren zur bereichsweisen Probeninspektion mittels eines Vielstrahl-Teilchenmikroskopes, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop zur Halbleiterprobeninspektion
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager

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JPS5921164B2 (ja) * 1976-05-20 1984-05-18 日本電子株式会社 電子線露光装置

Also Published As

Publication number Publication date
FR2385222A1 (fr) 1978-10-20
JPS53117387A (en) 1978-10-13
US4153843A (en) 1979-05-08
CA1100237A (en) 1981-04-28
DE2811553A1 (de) 1978-09-28
DE2811553C2 (it) 1992-05-07
GB1596351A (en) 1981-08-26
IT1107180B (it) 1985-11-25
FR2385222B1 (it) 1982-04-16

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