IT8119216A0 - Transistore mosfet verticale, dotato di un elettrodo di schermatura. - Google Patents

Transistore mosfet verticale, dotato di un elettrodo di schermatura.

Info

Publication number
IT8119216A0
IT8119216A0 IT8119216A IT1921681A IT8119216A0 IT 8119216 A0 IT8119216 A0 IT 8119216A0 IT 8119216 A IT8119216 A IT 8119216A IT 1921681 A IT1921681 A IT 1921681A IT 8119216 A0 IT8119216 A0 IT 8119216A0
Authority
IT
Italy
Prior art keywords
shielding electrode
mosfet transistor
vertical mosfet
vertical
transistor
Prior art date
Application number
IT8119216A
Other languages
English (en)
Other versions
IT1135091B (it
Inventor
Alvin Malcolm Goodman
Ramon Ubaldo Martinelli
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8119216A0 publication Critical patent/IT8119216A0/it
Application granted granted Critical
Publication of IT1135091B publication Critical patent/IT1135091B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
IT19216/81A 1980-02-22 1981-01-20 Transistore mosfet verticale,dotato di un elettrodo di schermatura IT1135091B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
IT8119216A0 true IT8119216A0 (it) 1981-01-20
IT1135091B IT1135091B (it) 1986-08-20

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19216/81A IT1135091B (it) 1980-02-22 1981-01-20 Transistore mosfet verticale,dotato di un elettrodo di schermatura

Country Status (8)

Country Link
JP (1) JPS56131961A (it)
DE (1) DE3105693A1 (it)
FR (1) FR2476914B1 (it)
GB (1) GB2070331B (it)
IT (1) IT1135091B (it)
PL (1) PL136606B1 (it)
SE (1) SE456291B (it)
YU (1) YU41520B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0119400B1 (en) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
WO2004066395A2 (en) * 2003-01-21 2004-08-05 North-West University Fast switching power insulated gate semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (it) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
IT1135091B (it) 1986-08-20
FR2476914B1 (fr) 1985-10-18
GB2070331A (en) 1981-09-03
YU41520B (en) 1987-08-31
FR2476914A1 (fr) 1981-08-28
YU42481A (en) 1983-06-30
PL229786A1 (it) 1981-09-18
JPH0213830B2 (it) 1990-04-05
DE3105693C2 (it) 1992-12-10
SE8100148L (sv) 1981-08-23
PL136606B1 (en) 1986-03-31
JPS56131961A (en) 1981-10-15
SE456291B (sv) 1988-09-19
GB2070331B (en) 1984-05-23
DE3105693A1 (de) 1981-11-26

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960129