SE8100148L - Mosfet-anordning - Google Patents

Mosfet-anordning

Info

Publication number
SE8100148L
SE8100148L SE8100148A SE8100148A SE8100148L SE 8100148 L SE8100148 L SE 8100148L SE 8100148 A SE8100148 A SE 8100148A SE 8100148 A SE8100148 A SE 8100148A SE 8100148 L SE8100148 L SE 8100148L
Authority
SE
Sweden
Prior art keywords
electrode
semiconductor surface
drain region
gate electrode
gate
Prior art date
Application number
SE8100148A
Other languages
Unknown language ( )
English (en)
Other versions
SE456291B (sv
Inventor
A M Goodman
R U Martinelli
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8100148L publication Critical patent/SE8100148L/sv
Publication of SE456291B publication Critical patent/SE456291B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE8100148A 1980-02-22 1981-01-13 Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen SE456291B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
SE8100148L true SE8100148L (sv) 1981-08-23
SE456291B SE456291B (sv) 1988-09-19

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8100148A SE456291B (sv) 1980-02-22 1981-01-13 Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen

Country Status (8)

Country Link
JP (1) JPS56131961A (sv)
DE (1) DE3105693A1 (sv)
FR (1) FR2476914B1 (sv)
GB (1) GB2070331B (sv)
IT (1) IT1135091B (sv)
PL (1) PL136606B1 (sv)
SE (1) SE456291B (sv)
YU (1) YU41520B (sv)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0119400B1 (en) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
WO2004066395A2 (en) * 2003-01-21 2004-08-05 North-West University Fast switching power insulated gate semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (sv) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
IT1135091B (it) 1986-08-20
FR2476914B1 (fr) 1985-10-18
GB2070331A (en) 1981-09-03
YU41520B (en) 1987-08-31
FR2476914A1 (fr) 1981-08-28
YU42481A (en) 1983-06-30
PL229786A1 (sv) 1981-09-18
JPH0213830B2 (sv) 1990-04-05
DE3105693C2 (sv) 1992-12-10
PL136606B1 (en) 1986-03-31
JPS56131961A (en) 1981-10-15
IT8119216A0 (it) 1981-01-20
SE456291B (sv) 1988-09-19
GB2070331B (en) 1984-05-23
DE3105693A1 (de) 1981-11-26

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