IT8621817A0 - Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi. - Google Patents

Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi.

Info

Publication number
IT8621817A0
IT8621817A0 IT8621817A IT2181786A IT8621817A0 IT 8621817 A0 IT8621817 A0 IT 8621817A0 IT 8621817 A IT8621817 A IT 8621817A IT 2181786 A IT2181786 A IT 2181786A IT 8621817 A0 IT8621817 A0 IT 8621817A0
Authority
IT
Italy
Prior art keywords
inductive
charges
shield
injection
substrate
Prior art date
Application number
IT8621817A
Other languages
English (en)
Other versions
IT1197279B (it
IT8621817A1 (it
Inventor
Franco Bertotti
Paolo Ferrari
Maria Teresa Gatti
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT21817/86A priority Critical patent/IT1197279B/it
Publication of IT8621817A0 publication Critical patent/IT8621817A0/it
Priority to DE8787113468T priority patent/DE3780390T2/de
Priority to EP87113468A priority patent/EP0261556B1/en
Priority to US07/099,044 priority patent/US4890149A/en
Priority to JP62242401A priority patent/JP2525208B2/ja
Publication of IT8621817A1 publication Critical patent/IT8621817A1/it
Application granted granted Critical
Publication of IT1197279B publication Critical patent/IT1197279B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
IT21817/86A 1986-09-25 1986-09-25 Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi IT1197279B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT21817/86A IT1197279B (it) 1986-09-25 1986-09-25 Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
DE8787113468T DE3780390T2 (de) 1986-09-25 1987-09-15 Integrierter schaltkreis zur abschirmung von ladungstraegerinjektionen in das substrat, insbesondere bei schaltkreisen mit induktiven und kapazitiven lasten.
EP87113468A EP0261556B1 (en) 1986-09-25 1987-09-15 Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads
US07/099,044 US4890149A (en) 1986-09-25 1987-09-21 Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads
JP62242401A JP2525208B2 (ja) 1986-09-25 1987-09-25 集積装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21817/86A IT1197279B (it) 1986-09-25 1986-09-25 Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi

Publications (3)

Publication Number Publication Date
IT8621817A0 true IT8621817A0 (it) 1986-09-25
IT8621817A1 IT8621817A1 (it) 1988-03-25
IT1197279B IT1197279B (it) 1988-11-30

Family

ID=11187276

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21817/86A IT1197279B (it) 1986-09-25 1986-09-25 Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi

Country Status (5)

Country Link
US (1) US4890149A (it)
EP (1) EP0261556B1 (it)
JP (1) JP2525208B2 (it)
DE (1) DE3780390T2 (it)
IT (1) IT1197279B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1231894B (it) * 1987-10-15 1992-01-15 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato.
DE3924278A1 (de) * 1988-08-10 1990-02-15 Bosch Gmbh Robert Elektronisches, monolithisch integriertes geraet
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
DE69131441T2 (de) * 1990-04-13 1999-12-16 Kabushiki Kaisha Toshiba, Kawasaki Methode zur Verhinderung von einer Spannungsschwankung in einem Halbleiterbauelement
DE4133245C2 (de) * 1991-10-08 2001-09-20 Bosch Gmbh Robert Bipolare monolithisch integrierte Schaltung
IT1252623B (it) * 1991-12-05 1995-06-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina
DE4209523C1 (it) * 1992-03-24 1993-03-11 Siemens Ag, 8000 Muenchen, De
US5243214A (en) * 1992-04-14 1993-09-07 North American Philips Corp. Power integrated circuit with latch-up prevention
JPH0786430A (ja) * 1993-09-14 1995-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5408122A (en) * 1993-12-01 1995-04-18 Eastman Kodak Company Vertical structure to minimize settling times for solid state light detectors
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
DE69528958T2 (de) * 1995-01-31 2003-09-11 Stmicroelectronics S.R.L., Agrate Brianza Monolitische Ausgangsstufe mit Eigenbeschirmung gegen Latch-up-Phänomene
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
DE69522936T2 (de) * 1995-07-31 2002-08-29 Stmicroelectronics S.R.L., Agrate Brianza Hochspannungstreiberschaltung für induktive Lasten
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
DE69841763D1 (de) * 1997-10-28 2010-08-26 Nxp Bv Halbleiterbauelement mit einem halbbrücken-schaltkreis
WO2003005449A1 (en) * 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
JP4775684B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
JP4775682B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
US8657824B2 (en) * 2003-11-18 2014-02-25 Smith & Nephew, Inc. Universal double offset surgical instrument
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202006A (en) * 1978-02-15 1980-05-06 Rca Corporation Semiconductor integrated circuit device
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
SE427598B (sv) * 1981-08-25 1983-04-18 Ericsson Telefon Ab L M Halvledardiod avsedd att inga i integrerade kretsar
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
GB2185621B (en) * 1985-10-29 1988-12-14 Plessey Co Plc Protection structures

Also Published As

Publication number Publication date
DE3780390D1 (de) 1992-08-20
DE3780390T2 (de) 1993-03-11
EP0261556A1 (en) 1988-03-30
EP0261556B1 (en) 1992-07-15
IT1197279B (it) 1988-11-30
IT8621817A1 (it) 1988-03-25
JP2525208B2 (ja) 1996-08-14
JPS6388854A (ja) 1988-04-19
US4890149A (en) 1989-12-26

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929