IT979892B - Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto - Google Patents
Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodottoInfo
- Publication number
- IT979892B IT979892B IT48870/73A IT4887073A IT979892B IT 979892 B IT979892 B IT 979892B IT 48870/73 A IT48870/73 A IT 48870/73A IT 4887073 A IT4887073 A IT 4887073A IT 979892 B IT979892 B IT 979892B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- produced
- schottky barrier
- barrier diode
- diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3221—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00237060A US3808072A (en) | 1972-03-22 | 1972-03-22 | In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide |
| US24931172A | 1972-05-01 | 1972-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT979892B true IT979892B (it) | 1974-09-30 |
Family
ID=26930348
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT48869/73A IT982897B (it) | 1972-03-22 | 1973-03-16 | Mordenzatura in situ di arseniuro di gallio durante lo accrescimento in fase vapore di arseniuro di gallio epitassiale |
| IT48870/73A IT979892B (it) | 1972-03-22 | 1973-03-16 | Metodo di fabbricazione di un diodo a barriera di schottky e dispositivo cosi prodotto |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT48869/73A IT982897B (it) | 1972-03-22 | 1973-03-16 | Mordenzatura in situ di arseniuro di gallio durante lo accrescimento in fase vapore di arseniuro di gallio epitassiale |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS5232831B2 (it) |
| FR (2) | FR2176999B1 (it) |
| GB (2) | GB1425101A (it) |
| IT (2) | IT982897B (it) |
| NL (2) | NL160989C (it) |
| SE (2) | SE388972B (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244582A (en) * | 1975-10-06 | 1977-04-07 | New Japan Radio Co Ltd | Semiconductor device and process for production of the same |
| JPS55114620A (en) * | 1979-02-22 | 1980-09-04 | Yoshio Kaneda | Driver's cab on tractor or the like |
| JPS56169331A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Vapor phase etching method for compound semiconductor |
| JPS5770810A (en) * | 1980-10-17 | 1982-05-01 | Lion Corp | Cosmetic for hair |
| JPS60222410A (ja) * | 1984-04-20 | 1985-11-07 | Asahi Denka Kogyo Kk | シヤンプ−組成物 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4916231A (it) * | 1972-06-06 | 1974-02-13 |
-
1973
- 1973-03-09 SE SE7303348A patent/SE388972B/xx unknown
- 1973-03-09 SE SE7303347A patent/SE375557B/xx unknown
- 1973-03-16 IT IT48869/73A patent/IT982897B/it active
- 1973-03-16 IT IT48870/73A patent/IT979892B/it active
- 1973-03-21 FR FR7310134A patent/FR2176999B1/fr not_active Expired
- 1973-03-21 NL NL7303958.A patent/NL160989C/xx not_active IP Right Cessation
- 1973-03-21 FR FR7310133A patent/FR2176998B1/fr not_active Expired
- 1973-03-21 NL NL7303954.A patent/NL162313C/xx not_active IP Right Cessation
- 1973-03-22 GB GB1383973A patent/GB1425101A/en not_active Expired
- 1973-03-22 GB GB1384073A patent/GB1425102A/en not_active Expired
- 1973-03-22 JP JP48031933A patent/JPS5232831B2/ja not_active Expired
- 1973-05-10 JP JP5125473A patent/JPS5433711B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1425101A (en) | 1976-02-18 |
| FR2176999B1 (it) | 1978-03-03 |
| FR2176998B1 (it) | 1976-11-05 |
| NL7303954A (it) | 1973-09-25 |
| DE2313768A1 (de) | 1973-10-04 |
| NL7303958A (it) | 1973-09-25 |
| JPS5232831B2 (it) | 1977-08-24 |
| JPS4948281A (it) | 1974-05-10 |
| SE375557B (it) | 1975-04-21 |
| DE2313768B2 (de) | 1975-11-20 |
| GB1425102A (en) | 1976-02-18 |
| JPS5019367A (it) | 1975-02-28 |
| JPS5433711B2 (it) | 1979-10-22 |
| NL160989B (nl) | 1979-07-16 |
| NL160989C (nl) | 1979-12-17 |
| IT982897B (it) | 1974-10-21 |
| FR2176999A1 (it) | 1973-11-02 |
| NL162313C (nl) | 1980-05-16 |
| SE388972B (sv) | 1976-10-18 |
| NL162313B (nl) | 1979-12-17 |
| FR2176998A1 (it) | 1973-11-02 |
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