JPS56169331A - Vapor phase etching method for compound semiconductor - Google Patents
Vapor phase etching method for compound semiconductorInfo
- Publication number
- JPS56169331A JPS56169331A JP7234680A JP7234680A JPS56169331A JP S56169331 A JPS56169331 A JP S56169331A JP 7234680 A JP7234680 A JP 7234680A JP 7234680 A JP7234680 A JP 7234680A JP S56169331 A JPS56169331 A JP S56169331A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- compound semiconductor
- source
- valves
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a preferable overall surface of a compound semiconductor with a simple vapor phase growing device by periodically repeating the steps of supplying a gas to be supplied to the device to a compound semiconductor material and supplying to a substrate crystal. CONSTITUTION:A Ga source 3 and a bypass tube 4 are provided at the upstream side of a substrate 2 placed in a reaction tube 1, and carrier gas flows through the tube. After the carrier gas controlled in its flow rate by a flowmeter 7 is fed through valves 8 and 9 and is included with AsCl3 vapor in a constant-temperature tank 11, it is supplied to the source 3 or the tube 4 upon opening or closing of switching valves 13 and 14. At that time the valves 13, 14 are alternately opened and closed, and the repeating period is suitably accelerated. Thus, the vicinity of the substrate crystal 2 can be maintained equivalently to the state that the reaction gas from the source 3 and the AsCl3 from the tube 4 are substantially simultaneously supplied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234680A JPS56169331A (en) | 1980-05-30 | 1980-05-30 | Vapor phase etching method for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234680A JPS56169331A (en) | 1980-05-30 | 1980-05-30 | Vapor phase etching method for compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56169331A true JPS56169331A (en) | 1981-12-26 |
Family
ID=13486646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7234680A Pending JPS56169331A (en) | 1980-05-30 | 1980-05-30 | Vapor phase etching method for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169331A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5407531A (en) * | 1994-02-15 | 1995-04-18 | At&T Corp. | Method of fabricating a compound semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019367A (en) * | 1972-03-22 | 1975-02-28 | ||
| JPS5425670A (en) * | 1977-07-28 | 1979-02-26 | Nec Corp | Gas etching method for iii-v group chemical compound semiconductor |
-
1980
- 1980-05-30 JP JP7234680A patent/JPS56169331A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019367A (en) * | 1972-03-22 | 1975-02-28 | ||
| JPS5425670A (en) * | 1977-07-28 | 1979-02-26 | Nec Corp | Gas etching method for iii-v group chemical compound semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5407531A (en) * | 1994-02-15 | 1995-04-18 | At&T Corp. | Method of fabricating a compound semiconductor device |
| EP0667638A3 (en) * | 1994-02-15 | 1996-07-10 | At & T Corp | Method of attacking a compound semiconductor. |
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