ITMI20041047A1 - Transatore a silicio su isolatore a canale doppio veerticale e procedimento di fabbricazione del medesimo - Google Patents

Transatore a silicio su isolatore a canale doppio veerticale e procedimento di fabbricazione del medesimo

Info

Publication number
ITMI20041047A1
ITMI20041047A1 IT001047A ITMI20041047A ITMI20041047A1 IT MI20041047 A1 ITMI20041047 A1 IT MI20041047A1 IT 001047 A IT001047 A IT 001047A IT MI20041047 A ITMI20041047 A IT MI20041047A IT MI20041047 A1 ITMI20041047 A1 IT MI20041047A1
Authority
IT
Italy
Prior art keywords
transator
silicon
same
manufacture procedure
vehicle channel
Prior art date
Application number
IT001047A
Other languages
English (en)
Inventor
Ji-Young Kim
Jin-Jun Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20041047A1 publication Critical patent/ITMI20041047A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
IT001047A 2003-07-24 2004-05-25 Transatore a silicio su isolatore a canale doppio veerticale e procedimento di fabbricazione del medesimo ITMI20041047A1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030050938A KR100568858B1 (ko) 2003-07-24 2003-07-24 수직 이중 채널을 갖는 ｓｏｉ 트랜지스터의 제조 방법 및그에 따른 구조
US10/759,239 US6960507B2 (en) 2003-07-24 2004-01-20 Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same

Publications (1)

Publication Number Publication Date
ITMI20041047A1 true ITMI20041047A1 (it) 2004-08-25

Family

ID=34074967

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001047A ITMI20041047A1 (it) 2003-07-24 2004-05-25 Transatore a silicio su isolatore a canale doppio veerticale e procedimento di fabbricazione del medesimo

Country Status (4)

Country Link
US (1) US6960507B2 (it)
JP (1) JP4754176B2 (it)
KR (1) KR100568858B1 (it)
IT (1) ITMI20041047A1 (it)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7285466B2 (en) * 2003-08-05 2007-10-23 Samsung Electronics Co., Ltd. Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
KR100729923B1 (ko) * 2005-03-31 2007-06-18 주식회사 하이닉스반도체 스텝 ｓｔｉ 프로파일을 이용한 낸드 플래쉬 메모리 소자의트랜지스터 형성방법
KR101172853B1 (ko) * 2005-07-22 2012-08-10 삼성전자주식회사 반도체 소자의 형성 방법
TWI278067B (en) * 2006-01-09 2007-04-01 Nanya Technology Corp Method for fabricating a recessed-gate MOS transistor device
DE102006007053B4 (de) * 2006-02-15 2008-08-14 Infineon Technologies Austria Ag Optimierte dielektrische Isolationsstrukturen und Verfahren zu deren Herstellung
TWI309067B (en) * 2006-03-15 2009-04-21 Nanya Technology Corp Method for fabricating a recessed-gate mos transistor device
KR100732304B1 (ko) * 2006-03-23 2007-06-25 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US7625776B2 (en) * 2006-06-02 2009-12-01 Micron Technology, Inc. Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon
US7628932B2 (en) 2006-06-02 2009-12-08 Micron Technology, Inc. Wet etch suitable for creating square cuts in si
US7709341B2 (en) * 2006-06-02 2010-05-04 Micron Technology, Inc. Methods of shaping vertical single crystal silicon walls and resulting structures
US7560344B2 (en) * 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
US7790524B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
US7790543B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
US7786535B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Design structures for high-voltage integrated circuits
US7772651B2 (en) * 2008-01-11 2010-08-10 International Business Machines Corporation Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
DE102008045037B4 (de) * 2008-08-29 2010-12-30 Advanced Micro Devices, Inc., Sunnyvale Statischer RAM-Zellenaufbau und Mehrfachkontaktschema zum Anschluss von Doppelkanaltransistoren
US20110177154A1 (en) * 2008-09-15 2011-07-21 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Tubular nanostructure targeted to cell membrane
CN102412299A (zh) * 2010-09-21 2012-04-11 株式会社东芝 半导体装置及其制造方法
CN102412295A (zh) * 2010-09-21 2012-04-11 株式会社东芝 半导体装置及其制造方法
CN103779222A (zh) * 2012-10-23 2014-05-07 中国科学院微电子研究所 Mosfet的制造方法
US9748381B1 (en) 2016-10-11 2017-08-29 International Business Machines Corporation Pillar formation for heat dissipation and isolation in vertical field effect transistors
KR102350485B1 (ko) * 2017-08-18 2022-01-14 삼성전자주식회사 반도체 소자
CN110931557A (zh) * 2018-09-20 2020-03-27 长鑫存储技术有限公司 半导体器件及其制备方法
KR102343347B1 (ko) * 2020-05-12 2021-12-24 울산과학기술원 전자 소자 및 전자 소자 제조 방법
CN114093818B (zh) * 2020-08-24 2024-10-25 长鑫存储技术有限公司 半导体结构及其制备方法
CN113506738B (zh) * 2021-04-20 2025-01-10 芯盟科技有限公司 T型双沟道晶体管及制造方法、半导体器件及制造方法
US11817497B2 (en) 2021-08-25 2023-11-14 International Business Machines Corporation Vertical field effect transistor inverter with single fin device
CN116169145B (zh) * 2021-11-25 2026-04-03 北京超弦存储器研究院 共享栅极的垂直二维互补场效应管器件及其制造方法
US12598792B2 (en) * 2022-07-22 2026-04-07 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing the same which increases the channel length

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920010963A (ko) * 1990-11-23 1992-06-27 오가 노리오 Soi형 종채널 fet 및 그 제조방법
JPH04250667A (ja) * 1991-01-28 1992-09-07 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JPH04354138A (ja) * 1991-05-31 1992-12-08 Oki Electric Ind Co Ltd Ｍｉｓ型半導体装置の製造方法
JP3219307B2 (ja) * 1991-08-28 2001-10-15 シャープ株式会社 半導体装置の構造および製造方法
DE4244154C1 (de) * 1992-12-24 1994-05-05 Duerkopp Adler Ag Antriebselement für die Lastträger einer Hängeförderanlage
JPH0832066A (ja) * 1994-07-19 1996-02-02 Sumitomo Metal Ind Ltd 半導体装置の製造方法
JPH11150265A (ja) 1997-11-17 1999-06-02 Toshiba Corp 半導体装置
JP4083869B2 (ja) * 1998-05-14 2008-04-30 宮城沖電気株式会社 半導体装置の製造方法
US6268630B1 (en) * 1999-03-16 2001-07-31 Sandia Corporation Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications
JP3906005B2 (ja) * 2000-03-27 2007-04-18 株式会社東芝 半導体装置の製造方法
JP2003533050A (ja) 2000-05-10 2003-11-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス
KR100365411B1 (ko) 2000-06-30 2002-12-18 주식회사 하이닉스반도체 절연층상의 실리콘 금속 산화물 전계 효과 트랜지스터의제조 방법
JP2002151686A (ja) * 2000-11-15 2002-05-24 Nec Corp 半導体装置およびその製造方法
KR100365414B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for forming ultra-shallow junction using laser annealing process
US6706571B1 (en) 2002-10-22 2004-03-16 Advanced Micro Devices, Inc. Method for forming multiple structures in a semiconductor device
US6709982B1 (en) 2002-11-26 2004-03-23 Advanced Micro Devices, Inc. Double spacer FinFET formation

Also Published As

Publication number Publication date
JP4754176B2 (ja) 2011-08-24
JP2005045204A (ja) 2005-02-17
US20050017289A1 (en) 2005-01-27
KR20050011881A (ko) 2005-01-31
KR100568858B1 (ko) 2006-04-10
US6960507B2 (en) 2005-11-01

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