ITMI920338A0 - Dispositivo di isolamento del substrato - Google Patents

Dispositivo di isolamento del substrato

Info

Publication number
ITMI920338A0
ITMI920338A0 IT92MI338A ITMI920338A ITMI920338A0 IT MI920338 A0 ITMI920338 A0 IT MI920338A0 IT 92MI338 A IT92MI338 A IT 92MI338A IT MI920338 A ITMI920338 A IT MI920338A IT MI920338 A0 ITMI920338 A0 IT MI920338A0
Authority
IT
Italy
Prior art keywords
isolation device
substrate isolation
substrate
isolation
Prior art date
Application number
IT92MI338A
Other languages
English (en)
Inventor
Pietro Consiglio
Pietro Erratico
Original Assignee
St Microelectronics Srl
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl, Sgs Thomson Microelectronics filed Critical St Microelectronics Srl
Priority to ITMI920338A priority Critical patent/IT1261880B/it
Publication of ITMI920338A0 publication Critical patent/ITMI920338A0/it
Priority to DE69324621T priority patent/DE69324621T2/de
Priority to EP93102239A priority patent/EP0556743B1/en
Priority to JP5025662A priority patent/JPH065792A/ja
Priority to US08/017,816 priority patent/US5525832A/en
Publication of ITMI920338A1 publication Critical patent/ITMI920338A1/it
Application granted granted Critical
Publication of IT1261880B publication Critical patent/IT1261880B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
ITMI920338A 1992-02-17 1992-02-17 Dispositivo di isolamento del substrato, particolarmente per circuiti integrati IT1261880B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ITMI920338A IT1261880B (it) 1992-02-17 1992-02-17 Dispositivo di isolamento del substrato, particolarmente per circuiti integrati
DE69324621T DE69324621T2 (de) 1992-02-17 1993-02-12 Vorrichtung mit Substratisolation
EP93102239A EP0556743B1 (en) 1992-02-17 1993-02-12 Substrate insulation device
JP5025662A JPH065792A (ja) 1992-02-17 1993-02-15 基板絶縁デバイス
US08/017,816 US5525832A (en) 1992-02-17 1993-02-16 Substrate insulation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI920338A IT1261880B (it) 1992-02-17 1992-02-17 Dispositivo di isolamento del substrato, particolarmente per circuiti integrati

Publications (3)

Publication Number Publication Date
ITMI920338A0 true ITMI920338A0 (it) 1992-02-17
ITMI920338A1 ITMI920338A1 (it) 1993-08-17
IT1261880B IT1261880B (it) 1996-06-03

Family

ID=11362007

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI920338A IT1261880B (it) 1992-02-17 1992-02-17 Dispositivo di isolamento del substrato, particolarmente per circuiti integrati

Country Status (5)

Country Link
US (1) US5525832A (it)
EP (1) EP0556743B1 (it)
JP (1) JPH065792A (it)
DE (1) DE69324621T2 (it)
IT (1) IT1261880B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925910A (en) * 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
EP0936674B1 (en) 1998-02-10 2006-04-26 STMicroelectronics S.r.l. Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate
DE10006519B4 (de) * 2000-02-15 2004-03-11 Infineon Technologies Ag MOSFET-Treibertransistor und Verfahren zum Herstellen desselben
DE10037452B4 (de) 2000-08-01 2006-07-27 Infineon Technologies Ag Nachführschaltung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256893A (en) * 1987-07-22 1993-10-26 Hitachi, Ltd. Semiconductor integrated circuit device with power MOSFET incorporated
US5151767A (en) * 1991-05-03 1992-09-29 North American Philips Corp. Power integrated circuit having reverse-voltage protection
IT1252623B (it) * 1991-12-05 1995-06-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina

Also Published As

Publication number Publication date
DE69324621D1 (de) 1999-06-02
DE69324621T2 (de) 1999-12-09
ITMI920338A1 (it) 1993-08-17
JPH065792A (ja) 1994-01-14
EP0556743A1 (en) 1993-08-25
US5525832A (en) 1996-06-11
EP0556743B1 (en) 1999-04-28
IT1261880B (it) 1996-06-03

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970424