IT1261880B - Dispositivo di isolamento del substrato, particolarmente per circuiti integrati - Google Patents
Dispositivo di isolamento del substrato, particolarmente per circuiti integratiInfo
- Publication number
- IT1261880B IT1261880B ITMI920338A ITMI920338A IT1261880B IT 1261880 B IT1261880 B IT 1261880B IT MI920338 A ITMI920338 A IT MI920338A IT MI920338 A ITMI920338 A IT MI920338A IT 1261880 B IT1261880 B IT 1261880B
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuits
- insulation device
- substrate insulation
- substrate
- terminal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Dispositivo di isolamento del substrato caratterizzato dal fatto di comprendere mezzi di alimentazione connessi ad un morsetto di un elemento integrato attivo, quest'ultimo presentando, rispetto ad un substrato su cui è realizzato, almeno una giunzione polarizzata inversamente.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI920338A IT1261880B (it) | 1992-02-17 | 1992-02-17 | Dispositivo di isolamento del substrato, particolarmente per circuiti integrati |
| EP93102239A EP0556743B1 (en) | 1992-02-17 | 1993-02-12 | Substrate insulation device |
| DE69324621T DE69324621T2 (de) | 1992-02-17 | 1993-02-12 | Vorrichtung mit Substratisolation |
| JP5025662A JPH065792A (ja) | 1992-02-17 | 1993-02-15 | 基板絶縁デバイス |
| US08/017,816 US5525832A (en) | 1992-02-17 | 1993-02-16 | Substrate insulation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI920338A IT1261880B (it) | 1992-02-17 | 1992-02-17 | Dispositivo di isolamento del substrato, particolarmente per circuiti integrati |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI920338A0 ITMI920338A0 (it) | 1992-02-17 |
| ITMI920338A1 ITMI920338A1 (it) | 1993-08-17 |
| IT1261880B true IT1261880B (it) | 1996-06-03 |
Family
ID=11362007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI920338A IT1261880B (it) | 1992-02-17 | 1992-02-17 | Dispositivo di isolamento del substrato, particolarmente per circuiti integrati |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5525832A (it) |
| EP (1) | EP0556743B1 (it) |
| JP (1) | JPH065792A (it) |
| DE (1) | DE69324621T2 (it) |
| IT (1) | IT1261880B (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
| EP0936674B1 (en) | 1998-02-10 | 2006-04-26 | STMicroelectronics S.r.l. | Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate |
| DE10006519B4 (de) * | 2000-02-15 | 2004-03-11 | Infineon Technologies Ag | MOSFET-Treibertransistor und Verfahren zum Herstellen desselben |
| DE10037452B4 (de) * | 2000-08-01 | 2006-07-27 | Infineon Technologies Ag | Nachführschaltung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256893A (en) * | 1987-07-22 | 1993-10-26 | Hitachi, Ltd. | Semiconductor integrated circuit device with power MOSFET incorporated |
| US5151767A (en) * | 1991-05-03 | 1992-09-29 | North American Philips Corp. | Power integrated circuit having reverse-voltage protection |
| IT1252623B (it) * | 1991-12-05 | 1995-06-19 | Sgs Thomson Microelectronics | Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina |
-
1992
- 1992-02-17 IT ITMI920338A patent/IT1261880B/it active IP Right Grant
-
1993
- 1993-02-12 DE DE69324621T patent/DE69324621T2/de not_active Expired - Fee Related
- 1993-02-12 EP EP93102239A patent/EP0556743B1/en not_active Expired - Lifetime
- 1993-02-15 JP JP5025662A patent/JPH065792A/ja not_active Withdrawn
- 1993-02-16 US US08/017,816 patent/US5525832A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69324621D1 (de) | 1999-06-02 |
| US5525832A (en) | 1996-06-11 |
| DE69324621T2 (de) | 1999-12-09 |
| ITMI920338A0 (it) | 1992-02-17 |
| ITMI920338A1 (it) | 1993-08-17 |
| JPH065792A (ja) | 1994-01-14 |
| EP0556743A1 (en) | 1993-08-25 |
| EP0556743B1 (en) | 1999-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970424 |