ITRM910657A1 - Dispositivo di memoria a semiconduttori con condensatore impilato. - Google Patents

Dispositivo di memoria a semiconduttori con condensatore impilato.

Info

Publication number: ITRM910657A1
Authority: IT; Italy
Prior art keywords: memory device; semiconductor memory; stacked condenser; condenser; stacked
Prior art date: 1991-02-25

Application number

IT000657A

Other languages

English (en)

Inventor

Joon Kang

Yun-Pil Lee

Yong-Jik Park

Yun Seung Shin

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-02-25

Filing date

1991-09-03

Publication date

1993-03-03

1991-09-03 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1991-09-03 Publication of ITRM910657A0 publication Critical patent/ITRM910657A0/it

1993-03-03 Publication of ITRM910657A1 publication Critical patent/ITRM910657A1/it

1995-04-21 Application granted granted Critical

1995-04-21 Publication of IT1250772B publication Critical patent/IT1250772B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

ITRM910657A 1991-02-25 1991-09-03 Dispositivo di memoria a semiconduttori con condensatore impilato. IT1250772B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019910002988A KR930009127B1 (ko)	1991-02-25	1991-02-25	스택형캐패시터를구비하는반도체메모리장치

Publications (3)

Publication Number	Publication Date
ITRM910657A0 ITRM910657A0 (it)	1991-09-03
ITRM910657A1 true ITRM910657A1 (it)	1993-03-03
IT1250772B IT1250772B (it)	1995-04-21

Family

ID=19311444

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ITRM910657A IT1250772B (it)	1991-02-25	1991-09-03	Dispositivo di memoria a semiconduttori con condensatore impilato.

Country Status (8)

Country	Link
US (1)	US5208470A (it)
JP (1)	JP2532182B2 (it)
KR (1)	KR930009127B1 (it)
DE (1)	DE4129130C2 (it)
FR (1)	FR2673325B1 (it)
GB (1)	GB2253092B (it)
IT (1)	IT1250772B (it)
TW (1)	TW198117B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3212150B2 (ja) *	1992-08-07	2001-09-25	株式会社日立製作所	半導体装置
JP3653107B2 (ja) *	1994-03-14	2005-05-25	株式会社ルネサステクノロジ	半導体装置およびその製造方法
KR100190834B1 (ko) *	1994-12-08	1999-06-01	다니구찌 이찌로오, 기타오카 다카시	반도체장치및그제조방법
TW288200B (en) *	1995-06-28	1996-10-11	Mitsubishi Electric Corp	Semiconductor device and process thereof
KR100239690B1 (ko) *	1996-04-30	2000-01-15	김영환	반도체 메모리 셀의 필드산화막 형성방법
US6021064A (en) *	1998-02-04	2000-02-01	Vlsi Technology, Inc.	Layout for data storage circuit using shared bit line and method therefor
US6072713A (en) *	1998-02-04	2000-06-06	Vlsi Technology, Inc.	Data storage circuit using shared bit line and method therefor
KR100292943B1 (ko)	1998-03-25	2001-09-17	윤종용	디램장치의제조방법
KR100464414B1 (ko) *	2002-05-02	2005-01-03	삼성전자주식회사	Ｄｃ 노드와 ｂｃ 노드에 연결된 소오스/드레인 접합영역의 접합 프로파일이 서로 다른 디램 소자의 메모리 셀트랜지스터 및 그 제조방법
JP5191132B2 (ja) *	2007-01-29	2013-04-24	三菱電機株式会社	半導体装置
KR102932704B1 (ko)	2021-09-10	2026-03-04	삼성전자주식회사	반도체 메모리 장치 및 그의 제조 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5574175A (en) *	1978-11-29	1980-06-04	Nec Corp	Preparing interpolation type mos semiconductor device
JPS56134757A (en) *	1980-03-26	1981-10-21	Nec Corp	Complementary type mos semiconductor device and its manufacture
JPS5885559A (ja) *	1981-11-18	1983-05-21	Nec Corp	Ｃｍｏｓ型半導体集積回路装置
JPS61156862A (ja) *	1984-12-28	1986-07-16	Toshiba Corp	半導体記憶装置
JPS6260256A (ja) *	1985-09-10	1987-03-16	Toshiba Corp	半導体記憶装置及びその製造方法
JPS62114265A (ja) *	1985-11-13	1987-05-26	Mitsubishi Electric Corp	半導体記憶装置
KR900002474B1 (ko) *	1985-11-22	1990-04-16	미쓰비시 뎅기 가부시끼가이샤	반도체 메모리
KR900003028B1 (ko) *	1985-12-13	1990-05-04	미쓰비시 뎅기 가부시끼가이샤	반도체 집적회로장치
JPS62145860A (ja) *	1985-12-20	1987-06-29	Mitsubishi Electric Corp	半導体記憶装置の製造方法
JPS63260065A (ja) *	1987-04-17	1988-10-27	Hitachi Ltd	半導体記憶装置とその製造方法
JPS63318151A (ja) *	1987-06-22	1988-12-27	Oki Electric Ind Co Ltd	Ｄｒａｍメモリセル
JPS63318150A (ja) *	1987-06-22	1988-12-27	Oki Electric Ind Co Ltd	Ｄｒａｍメモリセルの製造方法
JPH01120862A (ja) *	1987-11-04	1989-05-12	Oki Electric Ind Co Ltd	半導体メモリ装置の製造方法
DE3918924C2 (de) *	1988-06-10	1996-03-21	Mitsubishi Electric Corp	Herstellungsverfahren für eine Halbleiterspeichereinrichtung
JPH02101769A (ja) *	1988-10-11	1990-04-13	Mitsubishi Electric Corp	半導体記憶装置
JPH07114257B2 (ja) *	1988-11-15	1995-12-06	三菱電機株式会社	半導体装置
US5068707A (en) *	1990-05-02	1991-11-26	Nec Electronics Inc.	DRAM memory cell with tapered capacitor electrodes

1991
- 1991-02-25 KR KR1019910002988A patent/KR930009127B1/ko not_active Expired - Lifetime
- 1991-07-30 US US07/738,132 patent/US5208470A/en not_active Expired - Lifetime
- 1991-08-02 TW TW080106061A patent/TW198117B/zh not_active IP Right Cessation
- 1991-08-20 FR FR9110439A patent/FR2673325B1/fr not_active Expired - Lifetime
- 1991-09-02 DE DE4129130A patent/DE4129130C2/de not_active Expired - Lifetime
- 1991-09-03 GB GB9118795A patent/GB2253092B/en not_active Expired - Lifetime
- 1991-09-03 JP JP3248446A patent/JP2532182B2/ja not_active Expired - Lifetime
- 1991-09-03 IT ITRM910657A patent/IT1250772B/it active IP Right Grant

Also Published As

Publication number	Publication date
ITRM910657A0 (it)	1991-09-03
KR920017249A (ko)	1992-09-26
US5208470A (en)	1993-05-04
GB9118795D0 (en)	1991-10-16
GB2253092B (en)	1994-11-16
IT1250772B (it)	1995-04-21
TW198117B (it)	1993-01-11
KR930009127B1 (ko)	1993-09-23
GB2253092A (en)	1992-08-26
FR2673325B1 (fr)	1997-03-14
JPH04278579A (ja)	1992-10-05
FR2673325A1 (fr)	1992-08-28
DE4129130A1 (de)	1992-09-03
DE4129130C2 (de)	1995-03-23
JP2532182B2 (ja)	1996-09-11

Legal Events

Date	Code	Title	Description
1995-04-21	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19970829

Publication	Publication Date	Title
DE69232525D1 (de)	2002-05-02	Halbleiterspeicheranordnung
EP0588402A3 (en)	1995-07-19	Solid state memory device.
ITMI910107A0 (it)	1991-01-18	Dispositivo di memoria a semiconduttore
DE69430683D1 (de)	2002-07-04	Halbleiterspeicheranordnung
DE69232950D1 (de)	2003-04-10	Halbleiterspeichervorrichtung
ITMI911218A1 (it)	1992-11-03	Dispositivo a semiconduttore di memoria non volatile
DE69221218D1 (de)	1997-09-04	Halbleiterspeicher
DE69331562D1 (de)	2002-03-21	Halbleiterspeicheranordnung
DE69216695D1 (de)	1997-02-27	Halbleiterspeicher
ITMI931390A1 (it)	1994-12-29	Dispositivo di memoria a semiconduttori avente una funzione di auto- ricarica
DE69433288D1 (de)	2003-12-04	Halbleiterspeicheranordnung
DE69220101D1 (de)	1997-07-10	Halbleiterspeichereinrichtung
ITRM910657A1 (it)	1993-03-03	Dispositivo di memoria a semiconduttori con condensatore impilato.
DE69222793D1 (de)	1997-11-27	Halbleiterspeicheranordnung
EP0570977A3 (en)	1995-03-22	Semiconductor memory device.
DE69223333D1 (de)	1998-01-15	Halbleiterspeicheranordnung
DE69225298D1 (de)	1998-06-04	Halbleiterspeichervorrichtung
ITMI912808A1 (it)	1993-04-23	Dispositivo di memoria a semiconduttore
DE69224559D1 (de)	1998-04-09	Halbleiterspeicher
DE69215555D1 (de)	1997-01-16	Halbleiterspeicheranordnung
DE69114345D1 (de)	1995-12-14	Halbleiterspeichereinrichtung.
IT1274305B (it)	1997-07-17	Dispositivo a semiconduttore di memoria
EP0588129A3 (en)	1994-12-21	Solid state memory device.
ITMI912229A0 (it)	1991-08-08	Dispositivo di memoria a semiconduttore con ridondanza
DE69103176D1 (de)	1994-09-08	Halbleiterspeichervorrichtung.