ITRM950184A0 - Procedimento per migliorare le prestazioni di dispositivi a base di silicio amorfo quali celle solari, ottenuti per deposizione da plasma a temperatura inferiore, altamente diluito con idrogeno. - Google Patents
Procedimento per migliorare le prestazioni di dispositivi a base di silicio amorfo quali celle solari, ottenuti per deposizione da plasma a temperatura inferiore, altamente diluito con idrogeno.Info
- Publication number
- ITRM950184A0 ITRM950184A0 ITRM950184A ITRM950184A ITRM950184A0 IT RM950184 A0 ITRM950184 A0 IT RM950184A0 IT RM950184 A ITRM950184 A IT RM950184A IT RM950184 A ITRM950184 A IT RM950184A IT RM950184 A0 ITRM950184 A0 IT RM950184A0
- Authority
- IT
- Italy
- Prior art keywords
- deposition
- plasma
- hydrogen
- procedure
- performance
- Prior art date
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 title 1
- 239000001257 hydrogen Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
- H10F77/1668—Amorphous semiconductors including only Group IV materials presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21779994A | 1994-03-25 | 1994-03-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITRM950184A0 true ITRM950184A0 (it) | 1995-03-24 |
| ITRM950184A1 ITRM950184A1 (it) | 1996-09-24 |
| IT1278061B1 IT1278061B1 (it) | 1997-11-17 |
Family
ID=22812580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT95RM000184A IT1278061B1 (it) | 1994-03-25 | 1995-03-24 | Procedimento per migliorare le prestazioni di dispositivi a base di silicio amorfo quali celle solari, ottenuti per deposizione da plasma |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US5646050A (it) |
| JP (3) | JPH09512665A (it) |
| CN (1) | CN1135635C (it) |
| DE (1) | DE19581590T1 (it) |
| FR (1) | FR2721754B1 (it) |
| GB (1) | GB2301939B (it) |
| IT (1) | IT1278061B1 (it) |
| WO (1) | WO1995026571A1 (it) |
Families Citing this family (79)
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| CN106571287A (zh) * | 2015-10-12 | 2017-04-19 | 上海新昇半导体科技有限公司 | 外延层的形成方法 |
| JP2019522321A (ja) * | 2016-06-30 | 2019-08-08 | イェヒ オア ライト クリエイション リミテッドＹｅｈｉ Ｏｒ Ｌｉｇｈｔ Ｃｒｅａｔｉｏｎ Ｌｉｍｉｔｅｄ | 高効率ライトシステム |
| WO2018078642A1 (en) | 2016-10-24 | 2018-05-03 | Indian Institute Of Technology, Guwahati | A microfluidic electrical energy harvester |
| CN111477721B (zh) * | 2020-03-04 | 2021-06-01 | 杭州电子科技大学 | 一种利用变化的电场来控制氢钝化的方法 |
| US12545995B2 (en) * | 2021-03-17 | 2026-02-10 | Postech Academy-Industry Foundation | Method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light, method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light, and method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light |
| US11502217B1 (en) | 2021-05-24 | 2022-11-15 | Gautam Ganguly | Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon |
| CN115775850B (zh) * | 2021-09-08 | 2025-12-12 | 嘉兴阿特斯技术研究院有限公司 | 太阳能电池片后处理方法及太阳能电池片后处理设备 |
| CN116259688B (zh) * | 2022-11-15 | 2025-05-13 | 新疆未来双碳能源有限公司 | 一种硅异质结太阳电池的制备方法 |
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| AU632241B2 (en) * | 1990-09-06 | 1992-12-17 | Mitsui Toatsu Chemicals Inc. | Amorphous silicon solar cell and method for manufacturing the same |
| US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
| JP3068276B2 (ja) * | 1991-09-04 | 2000-07-24 | 鐘淵化学工業株式会社 | 非単結晶タンデム型太陽電池の製法及びそれに用いる製造装置 |
| US5242505A (en) * | 1991-12-03 | 1993-09-07 | Electric Power Research Institute | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
| US5230753A (en) * | 1991-12-03 | 1993-07-27 | Princeton University | Photostable amorphous silicon-germanium alloys |
| US5231048A (en) * | 1991-12-23 | 1993-07-27 | United Solar Systems Corporation | Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve |
| JP3162781B2 (ja) * | 1992-03-04 | 2001-05-08 | 三洋電機株式会社 | 半導体薄膜の形成方法及びこの膜の形成装置 |
| JP3209789B2 (ja) * | 1992-03-28 | 2001-09-17 | 鐘淵化学工業株式会社 | ポリシリコン薄膜堆積物およびその製法 |
| JP2951146B2 (ja) * | 1992-04-15 | 1999-09-20 | キヤノン株式会社 | 光起電力デバイス |
| US5358755A (en) * | 1993-08-13 | 1994-10-25 | Amoco Corporation | Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom |
| GB2301939B (en) * | 1994-03-25 | 1998-10-21 | Amoco Enron Solar | Increasing Stabilized Performance of Amorphous Silicon Based Devices Produced by Highly Hydrogen Diluted Lower Temperature Plasma Deposition |
-
1995
- 1995-03-09 GB GB9619784A patent/GB2301939B/en not_active Expired - Fee Related
- 1995-03-09 CN CNB951922882A patent/CN1135635C/zh not_active Expired - Fee Related
- 1995-03-09 DE DE19581590T patent/DE19581590T1/de not_active Withdrawn
- 1995-03-09 WO PCT/US1995/003119 patent/WO1995026571A1/en not_active Ceased
- 1995-03-09 JP JP7525183A patent/JPH09512665A/ja active Pending
- 1995-03-24 IT IT95RM000184A patent/IT1278061B1/it active IP Right Grant
- 1995-03-24 FR FR9503516A patent/FR2721754B1/fr not_active Expired - Fee Related
-
1996
- 1996-02-09 US US08/600,154 patent/US5646050A/en not_active Expired - Lifetime
-
1997
- 1997-03-12 US US08/820,431 patent/US5942049A/en not_active Expired - Lifetime
-
2005
- 2005-10-26 JP JP2005311931A patent/JP2006080557A/ja active Pending
-
2007
- 2007-11-27 JP JP2007306162A patent/JP2008153646A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006080557A (ja) | 2006-03-23 |
| CN1144573A (zh) | 1997-03-05 |
| GB2301939B (en) | 1998-10-21 |
| DE19581590T1 (de) | 1997-04-17 |
| JP2008153646A (ja) | 2008-07-03 |
| FR2721754A1 (fr) | 1995-12-29 |
| CN1135635C (zh) | 2004-01-21 |
| IT1278061B1 (it) | 1997-11-17 |
| US5646050A (en) | 1997-07-08 |
| GB2301939A (en) | 1996-12-18 |
| US5942049A (en) | 1999-08-24 |
| JPH09512665A (ja) | 1997-12-16 |
| GB9619784D0 (en) | 1996-11-06 |
| FR2721754B1 (fr) | 1997-12-05 |
| WO1995026571A1 (en) | 1995-10-05 |
| ITRM950184A1 (it) | 1996-09-24 |
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