ITTO20080045A1 - Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione - Google Patents
Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazioneInfo
- Publication number
- ITTO20080045A1 ITTO20080045A1 IT000045A ITTO20080045A ITTO20080045A1 IT TO20080045 A1 ITTO20080045 A1 IT TO20080045A1 IT 000045 A IT000045 A IT 000045A IT TO20080045 A ITTO20080045 A IT TO20080045A IT TO20080045 A1 ITTO20080045 A1 IT TO20080045A1
- Authority
- IT
- Italy
- Prior art keywords
- photodiods
- manufacturing
- operating
- place
- mutually insulated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000045A ITTO20080045A1 (it) | 2008-01-18 | 2008-01-18 | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| US12/356,464 US8471293B2 (en) | 2008-01-18 | 2009-01-20 | Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process |
| US13/241,114 US8574945B2 (en) | 2008-01-18 | 2011-09-22 | Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000045A ITTO20080045A1 (it) | 2008-01-18 | 2008-01-18 | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITTO20080045A1 true ITTO20080045A1 (it) | 2009-07-19 |
Family
ID=40290399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000045A ITTO20080045A1 (it) | 2008-01-18 | 2008-01-18 | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8471293B2 (it) |
| IT (1) | ITTO20080045A1 (it) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITTO20090322A1 (it) * | 2009-04-23 | 2010-10-24 | St Microelectronics Srl | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
| US8471293B2 (en) | 2008-01-18 | 2013-06-25 | Stmicroelectronics S.R.L. | Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process |
Families Citing this family (39)
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| ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
| EP2216817B1 (fr) * | 2009-02-05 | 2014-01-08 | STMicroelectronics (Crolles 2) SAS | Capteur d'images à semiconducteur à éclairement par la face arrière |
| US8860166B2 (en) * | 2010-03-23 | 2014-10-14 | Stmicroelectronics S.R.L. | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems |
| IT1399075B1 (it) * | 2010-03-23 | 2013-04-05 | St Microelectronics Srl | Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione |
| IT1399690B1 (it) | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
| IT1402806B1 (it) | 2010-11-29 | 2013-09-18 | St Microelectronics Srl | Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni. |
| US9466747B1 (en) * | 2011-10-25 | 2016-10-11 | Radiation Monitoring Devices, Inc. | Avalanche photodiode and methods of forming the same |
| US8709833B2 (en) * | 2011-12-22 | 2014-04-29 | International Business Machines Corporation | Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations |
| US8736008B2 (en) | 2012-01-04 | 2014-05-27 | General Electric Company | Photodiode array and methods of fabrication |
| WO2014025743A1 (en) * | 2012-08-07 | 2014-02-13 | Cornell University | Binder free and carbon free nanoparticle containing component, method and applications |
| KR20140019984A (ko) * | 2012-08-07 | 2014-02-18 | 한국전자통신연구원 | 가드링 구조를 갖는 아발란치 포토다이오드 및 그 제조 방법 |
| JP5925711B2 (ja) | 2013-02-20 | 2016-05-25 | 浜松ホトニクス株式会社 | 検出器、ｐｅｔ装置及びｘ線ｃｔ装置 |
| US9568620B2 (en) | 2014-09-22 | 2017-02-14 | General Electric Company | Solid state photomultiplier |
| FR3040537B1 (fr) * | 2015-08-26 | 2017-09-01 | New Imaging Tech | Matrice de photodiodes a cathodes isolees |
| US10636933B2 (en) * | 2015-12-22 | 2020-04-28 | Texas Instruments Incorporated | Tilted photodetector cell |
| AU2017205654B9 (en) | 2016-01-07 | 2021-12-09 | The Research Foundation For The State University Of New York | Selenium photomultiplier and method for fabrication thereof |
| EP3206234B1 (en) * | 2016-02-09 | 2023-08-09 | ams AG | Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element |
| ITUA20162954A1 (it) * | 2016-04-28 | 2017-10-28 | St Microelectronics Srl | Dispositivo a semiconduttore per la rilevazione di radiazione ultravioletta e infrarossa e relativo metodo di fabbricazione |
| WO2018031093A2 (en) | 2016-05-23 | 2018-02-15 | Massachusetts Institute Of Technology | Photodiode array structure for cross talk suppression |
| US10971533B2 (en) | 2018-01-29 | 2021-04-06 | Stmicroelectronics (Crolles 2) Sas | Vertical transfer gate with charge transfer and charge storage capabilities |
| IT201800004149A1 (it) * | 2018-03-30 | 2019-09-30 | St Microelectronics Srl | Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione |
| JP7129199B2 (ja) * | 2018-04-11 | 2022-09-01 | キヤノン株式会社 | 光検出装置、光検出システム及び移動体 |
| IT201800004620A1 (it) | 2018-04-17 | 2019-10-17 | Dispositivo a semiconduttore ad elevata sensibilita' per la rilevazione di specie chimiche fluide e relativo metodo di fabbricazione | |
| IT201800004621A1 (it) | 2018-04-17 | 2019-10-17 | Dispositivo optoelettronico ad elevata sensibilita' per la rilevazione di specie chimiche e relativo metodo di fabbricazione | |
| US10813607B2 (en) * | 2018-06-27 | 2020-10-27 | Prismatic Sensors Ab | X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor |
| IT201800007231A1 (it) | 2018-07-16 | 2020-01-16 | Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione | |
| FR3085231B1 (fr) | 2018-08-24 | 2020-09-25 | St Microelectronics Crolles 2 Sas | Capteur d'images a grande dynamique et faible bruit |
| US10971643B2 (en) * | 2018-10-24 | 2021-04-06 | Avago Technologies International Sales Pte. Limited | Implementation of an optimized avalanche photodiode (APD)/single photon avalanche diode (SPAD) structure |
| KR102332051B1 (ko) * | 2019-05-29 | 2021-11-30 | 한국과학기술원 | 광증배소자 및 그 제조방법 |
| FR3098075A1 (fr) | 2019-06-28 | 2021-01-01 | Stmicroelectronics (Crolles 2) Sas | Pixel et son procédé de commande |
| JP7222851B2 (ja) * | 2019-08-29 | 2023-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
| JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
| WO2022163373A1 (ja) * | 2021-01-27 | 2022-08-04 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置 |
| JP7487131B2 (ja) * | 2021-03-18 | 2024-05-20 | 株式会社東芝 | 半導体装置 |
| US11721779B2 (en) * | 2021-04-30 | 2023-08-08 | Texas Instruments Incorporated | Photodetector and optical sensing system |
| WO2023164944A1 (zh) * | 2022-03-04 | 2023-09-07 | 深圳市大疆创新科技有限公司 | 雪崩光电二极管阵列芯片、接收器、测距装置及可移动平台 |
| CN115939243A (zh) * | 2023-02-14 | 2023-04-07 | 无锡中微晶园电子有限公司 | 一种抗辐照apd的制备方法及其结构 |
| EP4654788A3 (en) * | 2024-05-24 | 2026-02-11 | Istituto Nazionale di Fisica Nucleare | Method for making a charged-particle sensor through a combination of rsd sensors and the process for producing monolithic cmos sensors, and charged-particle sensor obtained with said method |
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| ITTO20080045A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| ITTO20080046A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| IT1392366B1 (it) | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
| IT1393781B1 (it) | 2009-04-23 | 2012-05-08 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
-
2008
- 2008-01-18 IT IT000045A patent/ITTO20080045A1/it unknown
-
2009
- 2009-01-20 US US12/356,464 patent/US8471293B2/en active Active
-
2011
- 2011-09-22 US US13/241,114 patent/US8574945B2/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471293B2 (en) | 2008-01-18 | 2013-06-25 | Stmicroelectronics S.R.L. | Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process |
| ITTO20090322A1 (it) * | 2009-04-23 | 2010-10-24 | St Microelectronics Srl | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione |
| US8476730B2 (en) | 2009-04-23 | 2013-07-02 | Stmicroelectronics S.R.L. | Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US8471293B2 (en) | 2013-06-25 |
| US20090184317A1 (en) | 2009-07-23 |
| US20120009722A1 (en) | 2012-01-12 |
| US8574945B2 (en) | 2013-11-05 |
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