ITTO20080046A1 - Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione - Google Patents

Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione

Info

Publication number
ITTO20080046A1
ITTO20080046A1 IT000046A ITTO20080046A ITTO20080046A1 IT TO20080046 A1 ITTO20080046 A1 IT TO20080046A1 IT 000046 A IT000046 A IT 000046A IT TO20080046 A ITTO20080046 A IT TO20080046A IT TO20080046 A1 ITTO20080046 A1 IT TO20080046A1
Authority
IT
Italy
Prior art keywords
photodiods
manufacturing
operating
place
mutually insulated
Prior art date
Application number
IT000046A
Other languages
English (en)
Inventor
Piero Giorgio Fallica
Delfo Nunziato Sanfilippo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000046A priority Critical patent/ITTO20080046A1/it
Priority to US12/356,445 priority patent/US8778721B2/en
Publication of ITTO20080046A1 publication Critical patent/ITTO20080046A1/it
Priority to US14/281,529 priority patent/US9209336B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
IT000046A 2008-01-18 2008-01-18 Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione ITTO20080046A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT000046A ITTO20080046A1 (it) 2008-01-18 2008-01-18 Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
US12/356,445 US8778721B2 (en) 2008-01-18 2009-01-20 Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
US14/281,529 US9209336B2 (en) 2008-01-18 2014-05-19 Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000046A ITTO20080046A1 (it) 2008-01-18 2008-01-18 Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione

Publications (1)

Publication Number Publication Date
ITTO20080046A1 true ITTO20080046A1 (it) 2009-07-19

Family

ID=40290400

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000046A ITTO20080046A1 (it) 2008-01-18 2008-01-18 Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione

Country Status (2)

Country Link
US (2) US8778721B2 (it)
IT (1) ITTO20080046A1 (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20090322A1 (it) * 2009-04-23 2010-10-24 St Microelectronics Srl Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US8471293B2 (en) 2008-01-18 2013-06-25 Stmicroelectronics S.R.L. Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
US8860166B2 (en) * 2010-03-23 2014-10-14 Stmicroelectronics S.R.L. Photo detector array of geiger mode avalanche photodiodes for computed tomography systems
IT1399075B1 (it) * 2010-03-23 2013-04-05 St Microelectronics Srl Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
WO2012024512A2 (en) * 2010-08-18 2012-02-23 Array Optronix, Inc. Semiconductor photodetectors with integrated electronic control
IT1402806B1 (it) 2010-11-29 2013-09-18 St Microelectronics Srl Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni.
US8861909B2 (en) 2011-02-17 2014-10-14 Cornell University Polysilicon photodetector, methods and applications
EP2549536B1 (de) * 2011-07-22 2020-08-19 Espros Photonics AG Halbleiterstruktur zur Photonendetektion
EP2733746B1 (en) 2011-09-08 2019-05-22 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
US9087936B2 (en) * 2012-02-06 2015-07-21 Agency For Science, Technology And Research Semiconductor photomultiplier device
ITTO20120501A1 (it) * 2012-06-08 2013-12-09 St Microelectronics Srl Dispositivo diagnostico con fotorilevatore integrato e sistema diagnostico includente il medesimo
ITTO20120634A1 (it) 2012-07-18 2014-01-19 St Microelectronics Srl Fotorivelatore con canale microfluidico integrato e relativo procedimento di fabbricazione
DE102013018789B4 (de) * 2012-11-29 2025-03-06 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
ITTO20130398A1 (it) 2013-05-16 2014-11-17 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger includente una struttura di confinamento elettro-ottico per la riduzione dell'interferenza, e schiera di fotodiodi
GB201311055D0 (en) * 2013-06-21 2013-08-07 St Microelectronics Res & Dev Single-photon avalanche diode and an array thereof
ITTO20130538A1 (it) 2013-06-28 2014-12-28 St Microelectronics Srl Sistema e metodo di misura di frequenza di oscillazione per un sensore mems e corrispondente sensore mems
JP2016062996A (ja) * 2014-09-16 2016-04-25 株式会社東芝 光検出器
US9450007B1 (en) 2015-05-28 2016-09-20 Stmicroelectronics S.R.L. Integrated circuit with reflective material in trenches and related methods
US9837411B2 (en) * 2015-07-14 2017-12-05 Tower Semiconductors Ltd. Semiconductor die with a metal via
ITUB20154111A1 (it) 2015-10-06 2017-04-06 St Microelectronics Srl Fotodiodo a valanga in carburo di silicio per la rilevazione di radiazione ultravioletta e relativo procedimento di fabbricazione
KR101707896B1 (ko) * 2015-10-23 2017-02-27 국방과학연구소 실리콘 광 증배 소자
KR101707897B1 (ko) * 2015-10-23 2017-02-27 국방과학연구소 실리콘 광 증배 소자
US10636933B2 (en) * 2015-12-22 2020-04-28 Texas Instruments Incorporated Tilted photodetector cell
KR101763865B1 (ko) 2015-12-29 2017-08-01 한국과학기술원 실리콘 광증배 소자
EP3206234B1 (en) * 2016-02-09 2023-08-09 ams AG Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element
WO2017219224A1 (en) * 2016-06-21 2017-12-28 Shenzhen Xpectvision Technology Co.,Ltd. An image sensor based on avalanche photodiodes
CN109564953B (zh) 2016-07-27 2022-06-14 浜松光子学株式会社 光检测装置
JP6839712B2 (ja) * 2016-07-27 2021-03-10 浜松ホトニクス株式会社 光検出装置
EP3309847B1 (en) 2016-10-13 2024-06-05 Canon Kabushiki Kaisha Photo-detection apparatus and photo-detection system
JP6701135B2 (ja) * 2016-10-13 2020-05-27 キヤノン株式会社 光検出装置および光検出システム
CN106711274B (zh) * 2016-11-30 2017-12-08 武汉光迅科技股份有限公司 一种雪崩光电二极管及其制造方法
US10866229B2 (en) * 2017-01-30 2020-12-15 Massachusetts Institute Of Technology Systems and methods for genome mapping
JP2018181910A (ja) * 2017-04-04 2018-11-15 浜松ホトニクス株式会社 光半導体装置の製造方法
JP6860467B2 (ja) * 2017-10-26 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 フォトダイオード、画素回路、および、フォトダイオードの製造方法
US11101400B2 (en) * 2017-11-28 2021-08-24 Luxtera Llc Method and system for a focused field avalanche photodiode
US10418402B2 (en) * 2017-11-30 2019-09-17 Stmicroelectronics (Research & Development) Limited Near ultraviolet photocell
JP7114244B2 (ja) 2017-11-30 2022-08-08 キヤノン株式会社 光検出装置、光検出システム、及び移動体
FR3074962A1 (fr) * 2017-12-08 2019-06-14 Stmicroelectronics (Crolles 2) Sas Dispositif electronique capteur d'images
JP7129199B2 (ja) 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
IT201800007231A1 (it) 2018-07-16 2020-01-16 Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione
JP7224823B2 (ja) 2018-09-19 2023-02-20 キヤノン株式会社 光検出装置
JP7242234B2 (ja) 2018-09-28 2023-03-20 キヤノン株式会社 光検出装置、光検出システム
JP2020107980A (ja) 2018-12-27 2020-07-09 キヤノン株式会社 光検出装置および撮像システム
JP2020108061A (ja) 2018-12-28 2020-07-09 キヤノン株式会社 撮像装置及び撮像システム
JP7395300B2 (ja) * 2019-03-22 2023-12-11 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
KR102332051B1 (ko) * 2019-05-29 2021-11-30 한국과학기술원 광증배소자 및 그 제조방법
US11145778B2 (en) 2019-09-20 2021-10-12 Waymo Llc Monolithic silicon photomultiplier array
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
WO2022163373A1 (ja) * 2021-01-27 2022-08-04 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP7774999B2 (ja) * 2021-09-06 2025-11-25 キヤノン株式会社 光電変換装置
CN113851501A (zh) * 2021-10-20 2021-12-28 华虹半导体(无锡)有限公司 防串扰图像传感器

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313127A (en) * 1980-03-06 1982-01-26 Hughes Aircraft Company Signal detection method for IR detector having charge readout structure
FR2633101B1 (fr) * 1988-06-16 1992-02-07 Commissariat Energie Atomique Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication
JP3029497B2 (ja) * 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
RU2102821C1 (ru) 1996-10-10 1998-01-20 Зираддин Ягуб-оглы Садыгов Лавинный фотодиод
JP3618517B2 (ja) * 1997-06-18 2005-02-09 三菱電機株式会社 半導体装置およびその製造方法
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
US6307244B1 (en) * 1998-08-12 2001-10-23 Rohm Co., Ltd. Schottky barrier semiconductor device
IT1317199B1 (it) * 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
JP3628936B2 (ja) * 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US6541836B2 (en) * 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
JP4227069B2 (ja) 2004-05-07 2009-02-18 ローム株式会社 光電変換デバイス、イメージセンサおよび光電変換デバイスの製造方法
DE102004022948B4 (de) 2004-05-10 2006-06-01 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Strahlungsdetektor
US7122840B2 (en) * 2004-06-17 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard ring and fabrication method thereof
GB0417749D0 (en) * 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
US7781826B2 (en) * 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
US7791161B2 (en) * 2005-08-25 2010-09-07 Freescale Semiconductor, Inc. Semiconductor devices employing poly-filled trenches
JP5157201B2 (ja) * 2006-03-22 2013-03-06 株式会社デンソー 半導体装置
KR100819711B1 (ko) * 2006-12-27 2008-04-04 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조 방법
CN101669218B (zh) 2007-04-24 2012-01-11 皇家飞利浦电子股份有限公司 光电二极管及其制作
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
JP2009033043A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 光半導体装置
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
JP4599379B2 (ja) * 2007-08-31 2010-12-15 株式会社東芝 トレンチゲート型半導体装置
JP2009065162A (ja) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8471293B2 (en) 2008-01-18 2013-06-25 Stmicroelectronics S.R.L. Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
ITTO20090322A1 (it) * 2009-04-23 2010-10-24 St Microelectronics Srl Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US8476730B2 (en) 2009-04-23 2013-07-02 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method

Also Published As

Publication number Publication date
US20090184384A1 (en) 2009-07-23
US20140252524A1 (en) 2014-09-11
US9209336B2 (en) 2015-12-08
US8778721B2 (en) 2014-07-15

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