ITTO940818A0 - Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione. - Google Patents

Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.

Info

Publication number
ITTO940818A0
ITTO940818A0 ITTO940818A ITTO940818A ITTO940818A0 IT TO940818 A0 ITTO940818 A0 IT TO940818A0 IT TO940818 A ITTO940818 A IT TO940818A IT TO940818 A ITTO940818 A IT TO940818A IT TO940818 A0 ITTO940818 A0 IT TO940818A0
Authority
IT
Italy
Prior art keywords
manufacture
slice
procedure
semiconductor material
integrated devices
Prior art date
Application number
ITTO940818A
Other languages
English (en)
Inventor
Bruno Murari
Flavio Villa
Ubaldo Mastromatteo
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT94TO000818A priority Critical patent/IT1268123B1/it
Publication of ITTO940818A0 publication Critical patent/ITTO940818A0/it
Priority to EP94830577A priority patent/EP0707338A2/en
Priority to US08/571,806 priority patent/US5855693A/en
Priority to JP7327021A priority patent/JP2680801B2/ja
Publication of ITTO940818A1 publication Critical patent/ITTO940818A1/it
Application granted granted Critical
Publication of IT1268123B1 publication Critical patent/IT1268123B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
IT94TO000818A 1994-10-13 1994-10-13 Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione. IT1268123B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT94TO000818A IT1268123B1 (it) 1994-10-13 1994-10-13 Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.
EP94830577A EP0707338A2 (en) 1994-10-13 1994-12-15 Wafer of semiconductor material for fabricating integrated semiconductor devices, and process for its fabrication
US08/571,806 US5855693A (en) 1994-10-13 1995-12-13 Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
JP7327021A JP2680801B2 (ja) 1994-10-13 1995-12-15 集積装置を製造するための半導体材料のウェハ、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT94TO000818A IT1268123B1 (it) 1994-10-13 1994-10-13 Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.

Publications (3)

Publication Number Publication Date
ITTO940818A0 true ITTO940818A0 (it) 1994-10-13
ITTO940818A1 ITTO940818A1 (it) 1996-04-13
IT1268123B1 IT1268123B1 (it) 1997-02-20

Family

ID=11412833

Family Applications (1)

Application Number Title Priority Date Filing Date
IT94TO000818A IT1268123B1 (it) 1994-10-13 1994-10-13 Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.

Country Status (4)

Country Link
US (1) US5855693A (it)
EP (1) EP0707338A2 (it)
JP (1) JP2680801B2 (it)
IT (1) IT1268123B1 (it)

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EP0720223B1 (en) * 1994-12-30 2003-03-26 STMicroelectronics S.r.l. Process for the production of a semiconductor device having better interface adhesion between dielectric layers
US6045625A (en) * 1996-12-06 2000-04-04 Texas Instruments Incorporated Buried oxide with a thermal expansion matching layer for SOI
FR2767605B1 (fr) * 1997-08-25 2001-05-11 Gec Alsthom Transport Sa Circuit integre de puissance, procede de fabrication d'un tel circuit et convertisseur incluant un tel circuit
US6194290B1 (en) * 1998-03-09 2001-02-27 Intersil Corporation Methods for making semiconductor devices by low temperature direct bonding
US20020089016A1 (en) 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
FR2781082B1 (fr) * 1998-07-10 2002-09-20 Commissariat Energie Atomique Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6166411A (en) * 1999-10-25 2000-12-26 Advanced Micro Devices, Inc. Heat removal from SOI devices by using metal substrates
US6476446B2 (en) 2000-01-03 2002-11-05 Advanced Micro Devices, Inc. Heat removal by removal of buried oxide in isolation areas
US6552395B1 (en) * 2000-01-03 2003-04-22 Advanced Micro Devices, Inc. Higher thermal conductivity glass for SOI heat removal
US6613643B1 (en) 2000-01-28 2003-09-02 Advanced Micro Devices, Inc. Structure, and a method of realizing, for efficient heat removal on SOI
US6635552B1 (en) 2000-06-12 2003-10-21 Micron Technology, Inc. Methods of forming semiconductor constructions
JP2004507084A (ja) * 2000-08-16 2004-03-04 マサチューセッツ　インスティテュート　オブ　テクノロジー グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
US6429070B1 (en) 2000-08-30 2002-08-06 Micron Technology, Inc. DRAM cell constructions, and methods of forming DRAM cells
WO2002082514A1 (en) * 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
US6717212B2 (en) * 2001-06-12 2004-04-06 Advanced Micro Devices, Inc. Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7608927B2 (en) * 2002-08-29 2009-10-27 Micron Technology, Inc. Localized biasing for silicon on insulator structures
FR2851079B1 (fr) * 2003-02-12 2005-08-26 Soitec Silicon On Insulator Structure semi-conductrice sur substrat a forte rugosite
US6989314B2 (en) * 2003-02-12 2006-01-24 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure and method of making same
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
DE10326578B4 (de) * 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe
DE102004053016A1 (de) * 2004-11-03 2006-05-04 Atmel Germany Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
JP2006173349A (ja) * 2004-12-15 2006-06-29 Sony Corp 固体撮像素子の製造方法及び固体撮像素子
JP2007012897A (ja) * 2005-06-30 2007-01-18 Nec Electronics Corp 半導体装置およびその製造方法
CN101548369B (zh) * 2006-12-26 2012-07-18 硅绝缘体技术有限公司 制造绝缘体上半导体结构的方法
US7781256B2 (en) * 2007-05-31 2010-08-24 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
EP2454752B1 (en) * 2009-07-15 2015-09-09 Silanna Semiconductor U.S.A., Inc. Semiconductor-on-insulator with backside heat dissipation
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
GB2483702A (en) * 2010-09-17 2012-03-21 Ge Aviat Systems Ltd Method for the manufacture of a Silicon Carbide, Silicon Oxide interface having reduced interfacial carbon gettering
FR2967812B1 (fr) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
WO2013063652A1 (en) * 2011-11-04 2013-05-10 The Silanna Group Pty Ltd Method of producing a silicon-on-insulator article
US20140319612A1 (en) * 2011-11-07 2014-10-30 The Silanna Group Pty Ltd Semiconductor-on-insulator structure and process for producing same
EP2797107B1 (en) 2011-12-22 2017-09-20 Shin-Etsu Chemical Co., Ltd. Composite substrate
US8741739B2 (en) 2012-01-03 2014-06-03 International Business Machines Corporation High resistivity silicon-on-insulator substrate and method of forming
US9231063B2 (en) 2014-02-24 2016-01-05 International Business Machines Corporation Boron rich nitride cap for total ionizing dose mitigation in SOI devices
EP3168862B1 (en) * 2014-07-10 2022-07-06 Sicoxs Corporation Semiconductor substrate and semiconductor substrate production method
CN107548521A (zh) * 2015-02-18 2018-01-05 华威大学 功率半导体器件
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
US12424584B2 (en) 2020-10-29 2025-09-23 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures

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JPH0665210B2 (ja) * 1985-04-17 1994-08-22 日本電気株式会社 基板の製造方法
SE465492B (sv) * 1990-01-24 1991-09-16 Asea Brown Boveri Halvledarkomponent innehaallande ett diamantskikt som aer anordnat mellan ett substrat och ett aktivt skikt och foerfarande foer dess framstaellning
WO1993001617A1 (en) * 1991-07-08 1993-01-21 Asea Brown Boveri Ab Method for the manufacture of a semiconductor component
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5413952A (en) * 1994-02-02 1995-05-09 Motorola, Inc. Direct wafer bonded structure method of making

Also Published As

Publication number Publication date
IT1268123B1 (it) 1997-02-20
ITTO940818A1 (it) 1996-04-13
US5855693A (en) 1999-01-05
JP2680801B2 (ja) 1997-11-19
EP0707338A2 (en) 1996-04-17
EP0707338A3 (it) 1996-05-15
JPH0927604A (ja) 1997-01-28

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030