ITTO980557A0 - Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante - Google Patents
Metodo di programmazione rapida per effetto tunnel di memorie a porta flottanteInfo
- Publication number
- ITTO980557A0 ITTO980557A0 IT98TO000557A ITTO980557A ITTO980557A0 IT TO980557 A0 ITTO980557 A0 IT TO980557A0 IT 98TO000557 A IT98TO000557 A IT 98TO000557A IT TO980557 A ITTO980557 A IT TO980557A IT TO980557 A0 ITTO980557 A0 IT TO980557A0
- Authority
- IT
- Italy
- Prior art keywords
- programming method
- tunnel effect
- floating door
- rapid programming
- memory tunnel
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT98TO000557A ITTO980557A1 (it) | 1998-06-26 | 1998-06-26 | Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante |
| US09/344,425 US6172913B1 (en) | 1998-06-26 | 1999-06-25 | Method for fast programming floating gate memories by tunnel effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT98TO000557A ITTO980557A1 (it) | 1998-06-26 | 1998-06-26 | Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITTO980557A0 true ITTO980557A0 (it) | 1998-06-26 |
| ITTO980557A1 ITTO980557A1 (it) | 1999-12-26 |
Family
ID=11416880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT98TO000557A ITTO980557A1 (it) | 1998-06-26 | 1998-06-26 | Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6172913B1 (it) |
| IT (1) | ITTO980557A1 (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7366013B2 (en) * | 2005-12-09 | 2008-04-29 | Micron Technology, Inc. | Single level cell programming in a multiple level cell non-volatile memory device |
| US10861550B1 (en) * | 2019-06-06 | 2020-12-08 | Microchip Technology Incorporated | Flash memory cell adapted for low voltage and/or non-volatile performance |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5986931A (en) * | 1997-01-02 | 1999-11-16 | Caywood; John M. | Low voltage single CMOS electrically erasable read-only memory |
| KR100272037B1 (ko) * | 1997-02-27 | 2000-12-01 | 니시무로 타이죠 | 불휘발성 반도체 기억 장치 |
| JPH10256400A (ja) * | 1997-03-10 | 1998-09-25 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US6009017A (en) * | 1998-03-13 | 1999-12-28 | Macronix International Co., Ltd. | Floating gate memory with substrate band-to-band tunneling induced hot electron injection |
-
1998
- 1998-06-26 IT IT98TO000557A patent/ITTO980557A1/it unknown
-
1999
- 1999-06-25 US US09/344,425 patent/US6172913B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6172913B1 (en) | 2001-01-09 |
| ITTO980557A1 (it) | 1999-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2347767B (en) | Flash memory partitioning for read-while-write operation | |
| DE69913441D1 (de) | Hochdatenrateschreibverfahren für nicht-flüchtige FLASH-Speicher | |
| GB2354863B (en) | Methods and apparatus for updating a nonvolatile memory | |
| IT1296864B1 (it) | Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante | |
| FI971067L (fi) | Menetelmä muistin toteuttamiseksi | |
| FI971065A7 (fi) | Menetelmä muistin toteuttamiseksi | |
| AU3124700A (en) | Floating gate memory apparatus and method for selected programming thereof | |
| FI990312L (fi) | Pääsynhallintamenetelmä | |
| AU2003296988A1 (en) | An improved method for making high-density nonvolatile memory | |
| GB9604496D0 (en) | Embedded memory for field programmable gate array | |
| IL123687A0 (en) | Multiple writes per a single erase for a nonvolatile memory | |
| SG68590A1 (en) | Method for programming a nonvolatile memory | |
| FI971066A7 (fi) | Menetelmä muistin toteuttamiseksi | |
| GB2400709B (en) | System and method for programming ONO dual bit memory cells | |
| DE69908035D1 (de) | Dichtungsstreifen | |
| DE69614046D1 (de) | Nichtflüchtige Halbleiterspeicher | |
| DE69909930D1 (de) | Verfahren zum Löschen und Programmieren von Speicheranordnungen | |
| DE60001497D1 (de) | Rampenförmige oder stufenweise gate-kanal löschung für flash-speicher | |
| DE60016061D1 (de) | Abgeschirmte Bitleitungen für statischen Ramspeicher | |
| AU6433099A (en) | Nonvolatile memory | |
| DE69930605D1 (de) | Synchroner nichtflüchtiger mehrwertiger Speicher und Leseverfahren dafür | |
| ITTO980557A0 (it) | Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante | |
| ITMI992624A0 (it) | Circuiti e metodo per la temporizzazione di memorie non-volatili multi livello | |
| DE60102203D1 (de) | Programmierverfahren für eine Mehrpegelspeicherzelle | |
| FR2735896B1 (fr) | Memoire eeprom programmable et effacable par effet de fowler-nordheim |