IT1296864B1 - Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante - Google Patents

Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante

Info

Publication number
IT1296864B1
IT1296864B1 IT97MI002762A ITMI972762A IT1296864B1 IT 1296864 B1 IT1296864 B1 IT 1296864B1 IT 97MI002762 A IT97MI002762 A IT 97MI002762A IT MI972762 A ITMI972762 A IT MI972762A IT 1296864 B1 IT1296864 B1 IT 1296864B1
Authority
IT
Italy
Prior art keywords
doser
semiconductor memory
volatile semiconductor
floating door
door electrode
Prior art date
Application number
IT97MI002762A
Other languages
English (en)
Inventor
Takahiro Ohnakado
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI972762A1 publication Critical patent/ITMI972762A1/it
Application granted granted Critical
Publication of IT1296864B1 publication Critical patent/IT1296864B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
IT97MI002762A 1997-03-10 1997-12-12 Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante IT1296864B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9054906A JPH10256400A (ja) 1997-03-10 1997-03-10 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
ITMI972762A1 ITMI972762A1 (it) 1999-06-12
IT1296864B1 true IT1296864B1 (it) 1999-08-02

Family

ID=12983656

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI002762A IT1296864B1 (it) 1997-03-10 1997-12-12 Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante

Country Status (6)

Country Link
US (1) US5901084A (it)
JP (1) JPH10256400A (it)
KR (1) KR19980079362A (it)
DE (1) DE19752434C2 (it)
IT (1) IT1296864B1 (it)
TW (1) TW338193B (it)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
TW365001B (en) * 1996-10-17 1999-07-21 Hitachi Ltd Non-volatile semiconductor memory apparatus and the operation method
ITTO980557A1 (it) * 1998-06-26 1999-12-26 St Microelectronics Srl Metodo di programmazione rapida per effetto tunnel di memorie a porta flottante
JP2000150680A (ja) * 1998-11-12 2000-05-30 Fujitsu Ltd 半導体記憶装置
KR20010008442A (ko) * 1998-12-31 2001-02-05 김영환 반도체소자의 트랜지스터 형성방법
AU6918300A (en) * 1999-09-24 2001-04-30 Intel Corporation A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en) 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication
US6313486B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Floating gate transistor having buried strained silicon germanium channel layer
US6313487B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Vertical channel floating gate transistor having silicon germanium channel layer
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
JP4329293B2 (ja) * 2002-01-10 2009-09-09 ソニー株式会社 不揮発性半導体メモリ装置および電荷注入方法
KR100466187B1 (ko) * 2002-05-17 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 셀
US7221596B2 (en) * 2002-07-05 2007-05-22 Impinj, Inc. pFET nonvolatile memory
US6950342B2 (en) * 2002-07-05 2005-09-27 Impinj, Inc. Differential floating gate nonvolatile memories
US6760270B2 (en) * 2002-09-30 2004-07-06 Motorola, Inc. Erase of a non-volatile memory
US8691647B1 (en) * 2002-10-07 2014-04-08 Spansion Llc Memory devices containing a high-K dielectric layer
US6962852B2 (en) 2003-03-19 2005-11-08 Promos Technologies Inc. Nonvolatile memories and methods of fabrication
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6962851B2 (en) * 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6893921B2 (en) * 2003-04-10 2005-05-17 Mosel Vitelic, Inc. Nonvolatile memories with a floating gate having an upward protrusion
US6846712B2 (en) * 2003-05-16 2005-01-25 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US6885044B2 (en) 2003-07-30 2005-04-26 Promos Technologies, Inc. Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
TWI220252B (en) * 2003-08-06 2004-08-11 Ememory Technology Inc Method for programming, erasing and reading a flash memory cell
US7145370B2 (en) * 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
US7088623B2 (en) * 2003-10-16 2006-08-08 United Microelectronics Corp. Non-volatile memory technology suitable for flash and byte operation application
US7238575B2 (en) 2004-03-10 2007-07-03 Promos Technologies, Inc. Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
US7148104B2 (en) * 2004-03-10 2006-12-12 Promos Technologies Inc. Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
US7177182B2 (en) * 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
US7388420B2 (en) * 2004-03-30 2008-06-17 Impinj, Inc. Rewriteable electronic fuses
US7242614B2 (en) * 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
US7283390B2 (en) * 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US8896048B1 (en) * 2004-06-04 2014-11-25 Spansion Llc Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors
KR100647482B1 (ko) 2004-09-16 2006-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US8482052B2 (en) * 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7257033B2 (en) * 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) * 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
JP2007053171A (ja) 2005-08-16 2007-03-01 Toshiba Corp 不揮発性半導体メモリ装置
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
JP2008270364A (ja) * 2007-04-17 2008-11-06 Toyota Motor Corp 不揮発性半導体記憶素子
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
EP2068351A1 (en) * 2007-12-03 2009-06-10 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Floating gate non-volatile memory device and method for manufacturing same
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US8125835B2 (en) 2008-09-22 2012-02-28 Cypress Semiconductor Corporation Memory architecture having two independently controlled voltage pumps
CN102376715B (zh) * 2010-08-11 2014-03-12 中国科学院微电子研究所 一种无电容型动态随机访问存储器结构及其制备方法
US20120043600A1 (en) * 2010-08-18 2012-02-23 Van Der Vegt Henderikus Albert Floating-Gate Device and Method Therefor
CN102468342A (zh) * 2010-11-10 2012-05-23 中国科学院微电子研究所 一种半导体存储单元、器件及其制备方法
JP2014179361A (ja) * 2013-03-13 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2014183293A (ja) * 2013-03-21 2014-09-29 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3744036A (en) * 1971-05-24 1973-07-03 Intel Corp Electrically programmable read only memory array
JP2633571B2 (ja) * 1987-07-30 1997-07-23 株式会社東芝 紫外線消去型不揮発性半導体装置
JPH07118511B2 (ja) * 1989-01-17 1995-12-18 株式会社東芝 不揮発性半導体記憶装置
JPH0425176A (ja) * 1990-05-18 1992-01-28 Seiko Instr Inc 半導体装置の製造方法
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
JP3071578B2 (ja) * 1992-10-13 2000-07-31 沖電気工業株式会社 不揮発性半導体記憶装置
JPH07169861A (ja) * 1993-12-14 1995-07-04 Nec Corp 不揮発性半導体記憶装置
JP3541958B2 (ja) * 1993-12-16 2004-07-14 株式会社東芝 不揮発性半導体記憶装置
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JP3673538B2 (ja) * 1994-11-28 2005-07-20 沖電気工業株式会社 不揮発性半導体記憶装置の形成方法

Also Published As

Publication number Publication date
JPH10256400A (ja) 1998-09-25
TW338193B (en) 1998-08-11
DE19752434A1 (de) 1998-09-24
DE19752434C2 (de) 2000-10-19
ITMI972762A1 (it) 1999-06-12
US5901084A (en) 1999-05-04
KR19980079362A (ko) 1998-11-25

Similar Documents

Publication Publication Date Title
IT1296864B1 (it) Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante
DE19880311T1 (de) Nichtflüchtige Speicherstruktur
DE69936028D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69826955D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69522412D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69420591D1 (de) Nichtflüchtige Halbleiterspeicher
DE69810096D1 (de) Nichtflüchtiger speicher
DE69520902D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
IT1308856B1 (it) Circuito di lettura per una memoria non volatile.
EP1016085A4 (en) FLASH MEMORY SET
DE69614299D1 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Block-Löschfunktion
EP1220318A4 (en) Nonvolatile memory
ITMI921000A0 (it) Dispositivo di memoria non volatile a semiconduttori e relativo metodo di programmazione ottimizzato.
DE69614046D1 (de) Nichtflüchtige Halbleiterspeicher
EP0917153A4 (en) SEMICONDUCTOR MEMORY ARRANGEMENT
DE69835635D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69726698D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
ATA86197A (de) Ein-elektron speicherbauelement
DE60043485D1 (de) Nichtflüchtiger Halbleiterspeicher
DE60019191D1 (de) Nichtflüchtige ferroelektrische Speicheranordnung
DE69834540D1 (de) Halbleiterspeicher
DE69832683D1 (de) Nichtflüchtiges Halbleiterspeicherbauelement
DE69321700D1 (de) Nicht-flüchtige Halbleiterspeicher
DE69819961D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
0001 Granted