ITTO990944A0 - Metodo e circuito di lettura per una memoria non volatile. - Google Patents
Metodo e circuito di lettura per una memoria non volatile.Info
- Publication number
- ITTO990944A0 ITTO990944A0 IT99TO000944A ITTO990944A ITTO990944A0 IT TO990944 A0 ITTO990944 A0 IT TO990944A0 IT 99TO000944 A IT99TO000944 A IT 99TO000944A IT TO990944 A ITTO990944 A IT TO990944A IT TO990944 A0 ITTO990944 A0 IT TO990944A0
- Authority
- IT
- Italy
- Prior art keywords
- volatile memory
- reading circuit
- reading
- circuit
- volatile
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO000944A IT1308857B1 (it) | 1999-10-29 | 1999-10-29 | Metodo e circuito di lettura per una memoria non volatile. |
| US09/699,043 US6473340B1 (en) | 1999-10-29 | 2000-10-27 | Reading method and circuit for a non-volatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999TO000944A IT1308857B1 (it) | 1999-10-29 | 1999-10-29 | Metodo e circuito di lettura per una memoria non volatile. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO990944A0 true ITTO990944A0 (it) | 1999-10-29 |
| ITTO990944A1 ITTO990944A1 (it) | 2001-04-29 |
| IT1308857B1 IT1308857B1 (it) | 2002-01-11 |
Family
ID=11418185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT1999TO000944A IT1308857B1 (it) | 1999-10-29 | 1999-10-29 | Metodo e circuito di lettura per una memoria non volatile. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6473340B1 (it) |
| IT (1) | IT1308857B1 (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116030863A (zh) * | 2023-02-08 | 2023-04-28 | 中科南京智能技术研究院 | 一种应用于rram存算电路的电流减法电路及方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60136330D1 (de) * | 2001-04-10 | 2008-12-11 | St Microelectronics Srl | Leseschaltkreis und zugehöriges Verfahren für nichtflüchtigen Mehrpegel-Speicher |
| US6876249B2 (en) * | 2002-08-13 | 2005-04-05 | Semiconductor Components Industries, Llc | Circuit and method for a programmable reference voltage |
| EP1426965A1 (en) * | 2002-12-04 | 2004-06-09 | STMicroelectronics S.r.l. | Non volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values |
| US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
| EP1640995B1 (en) * | 2004-09-28 | 2009-06-17 | STMicroelectronics S.r.l. | A reading circuit and method for a nonvolatile memory device |
| ITTO20070109A1 (it) * | 2007-02-14 | 2008-08-15 | St Microelectronics Srl | Circuito e metodo di lettura per un dispositivo di memoria non volatile basati sulla generazione adattativa di una grandezza elettrica di riferimento |
| US8068367B2 (en) * | 2007-06-15 | 2011-11-29 | Micron Technology, Inc. | Reference current sources |
| JP4937865B2 (ja) * | 2007-09-11 | 2012-05-23 | 株式会社リコー | 定電圧回路 |
| KR101813182B1 (ko) * | 2011-11-16 | 2017-12-29 | 삼성전자주식회사 | 비휘발성 메모리 소자를 포함하는 다치 논리 장치 |
| US8982647B2 (en) * | 2012-11-14 | 2015-03-17 | Crossbar, Inc. | Resistive random access memory equalization and sensing |
| US9437257B2 (en) * | 2012-12-31 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensing circuit, memory device and data detecting method |
| US9627057B2 (en) | 2013-03-15 | 2017-04-18 | Crossbar, Inc. | Programming two-terminal memory cells with reduced program current |
| US9460785B2 (en) * | 2014-03-06 | 2016-10-04 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
| US9672930B2 (en) * | 2015-05-29 | 2017-06-06 | Silicon Storage Technology, Inc. | Low power operation for flash memory system |
| EP3461004B1 (en) * | 2017-09-20 | 2021-04-28 | Nxp B.V. | An amplifier and a wireless signal receiver comprising said amplifier |
| US11430491B2 (en) * | 2020-04-30 | 2022-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for reading data in memory |
| DE102021105181A1 (de) * | 2020-04-30 | 2021-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vorrichtung und verfahren zum lesen von daten in einem speicher |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346197A (ja) * | 1989-07-13 | 1991-02-27 | Fujitsu Ltd | 半導体記憶装置 |
| US5335198A (en) * | 1993-05-06 | 1994-08-02 | Advanced Micro Devices, Inc. | Flash EEPROM array with high endurance |
| JPH08180697A (ja) * | 1994-09-16 | 1996-07-12 | Texas Instr Inc <Ti> | センス増幅器用の基準電流を供給する基準回路及び方法 |
| EP0724266B1 (en) * | 1995-01-27 | 2001-12-12 | STMicroelectronics S.r.l. | Successive approximation method for sensing multiple-level non-volatile memory cells and sensing circuit using such method |
| EP0805454A1 (en) * | 1996-04-30 | 1997-11-05 | STMicroelectronics S.r.l. | Sensing circuit for reading and verifying the content of a memory cell |
| IT1293644B1 (it) * | 1997-07-25 | 1999-03-08 | Sgs Thomson Microelectronics | Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash |
| EP0905712B1 (en) * | 1997-09-29 | 2003-04-23 | STMicroelectronics S.r.l. | Method and device for analog programming of flash EEPROM memory cells with autoverify |
| ITTO980068A1 (it) * | 1998-01-27 | 1999-07-27 | Sgs Thomson Microelectronics | Circuito di lettura per memorie non volatili analogiche, in particola- re flash-eeprom, a lettura diretta della tensione di soglia e a corren |
| IT1305182B1 (it) * | 1998-11-13 | 2001-04-10 | St Microelectronics Srl | Circuito di lettura analogico ad alta precisione per celle di memorianon volatile, in particolare analogiche o multilivello flash o eeprom. |
| IT1312471B1 (it) * | 1999-05-11 | 2002-04-17 | St Microelectronics Srl | Metodo di verifica in scrittura del valore di soglia nelle memorie non volatili |
-
1999
- 1999-10-29 IT IT1999TO000944A patent/IT1308857B1/it active
-
2000
- 2000-10-27 US US09/699,043 patent/US6473340B1/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116030863A (zh) * | 2023-02-08 | 2023-04-28 | 中科南京智能技术研究院 | 一种应用于rram存算电路的电流减法电路及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6473340B1 (en) | 2002-10-29 |
| IT1308857B1 (it) | 2002-01-11 |
| ITTO990944A1 (it) | 2001-04-29 |
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