JP2000228491A - Semiconductor module and power converter - Google Patents

Abstract

(57) [Summary] (With correction) [PROBLEMS] To improve the reliability of a power semiconductor element, suppress a decrease in life, and reduce costs in response to an increase in heat loss of the power semiconductor element. A semiconductor module includes a first insulating substrate (2).
The metal electrode 3 is joined to the upper part of the metal electrode 3, the metal plate 11 for heat diffusion is joined to the upper part of the metal electrode 3, and the power semiconductor elements 4 and 5 are joined to the upper part of the metal plate 11 for heat diffusion. The power semiconductor elements 4 and 5, the heat diffusion metal plate 11 and the metal electrode 3 are housed in a resin package 6 having an insulating property, and the first insulating substrate 2 and the resin package 6 are bonded at the ends. I have. An insulating gel 7 is sealed inside the resin package 6. The heat generated in the power semiconductor elements 4 and 5 is radiated by bringing the first insulating substrate 2 into pressure contact with the cooler. Further, the heat dissipation characteristics can be further improved by forming a part of the external lead terminals connected to the power semiconductor elements 4 and 5 with a wide conductor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor module having a plurality of power semiconductor elements and a plurality of external lead terminals electrically connected to the power semiconductor elements, and a power converter using the semiconductor module. .

[0002]

2. Description of the Related Art In recent years, power semiconductor elements have been increased in capacity and speed, and heat loss has increased. On the other hand, it is necessary to keep the power semiconductor element within a certain temperature in terms of reliability and life. For this reason, a semiconductor module structure for keeping the power semiconductor element within a certain temperature is required to cope with an increase in heat loss.

The structure of a conventional semiconductor module will be described below.
This will be described with reference to FIGS. FIG. 24 is a plan view, and FIG. 25 is a sectional view taken along line AA of FIG.

In FIGS. 24 and 25, a semiconductor module includes a power semiconductor element 4
A first insulating substrate 2 for insulating the heat-dissipating metal plate 1 from the metal electrode 3, and a metal electrode 3 and a metal electrode 3 on the first insulating substrate 2.
The power semiconductor elements 4 and 5 are stacked and joined on the upper part of the power semiconductor element. Then, the power semiconductor elements 4 and 5, the metal electrode 3, and the first insulating substrate 2 are housed in an insulating resin package 6, and the heat dissipating metal plate 1 and the resin package 6 are bonded at their ends. ing. An insulating gel 7 is sealed inside the resin package 6.

The external lead terminals 8 and 9 and the power semiconductor elements 4 and 5 are electrically connected by wire bonding 10. In the semiconductor module configured as described above, heat loss occurs when the power semiconductor elements 4 and 5 are energized. The upper part of the power semiconductor elements 4 and 5 is filled with an insulating gel 7 as a heat insulating material, so that most of the heat loss generated in the power semiconductor elements 4 and 5 is transferred to the lower metal electrode 3. Conducts heat. The heat loss thermally conducted to the metal electrode 3 is transmitted to the first insulating substrate 2 and thermally conducted to the metal plate 1 for heat dissipation. The heat dissipating metal plate 1 is pressed into contact with the cooler by the screw, and the heat loss is dissipated by the cooler.
As described above, the power semiconductor elements 4 and 5 are cooled on one side and are kept within a certain temperature.

[0006]

FIG. 26 shows that the power semiconductor element 4 is 11 mm square, the first insulating substrate 2 is alumina, the heat dissipation metal plate 1 is copper, and transient heat loss occurs. The calculation results of the temperature rise of the power semiconductor element 4, the first insulating substrate 2, and the heat dissipation metal plate 1 in the case are shown.

In the conventional semiconductor module, since the metal electrode bonded to the upper portion of the first insulating substrate 2 having a poor thermal conductivity is very thin, 1 mm or less, the heat loss generated in the power semiconductor element 4 is diffused. Therefore, heat concentration occurs in the first green substrate 2. For this reason, as shown in FIG. 26, the first insulating substrate 2 having poor heat conductivity where heat loss is concentrated.
Becomes very high, and as a result, the temperature rise of the power semiconductor element 4 becomes very high.

Since the power semiconductor elements 4 and 5 are electrically connected by the wire bonding 10,
Cutting due to thermal stress of the wire bonding 10 may be considered, and the reliability is low.

As described above, the conventional semiconductor module structure has the following problems. One-sided cooling, poor cooling efficiency, heat loss of power semiconductor element 4 due to poor thermal conductivity
Cannot be diffused in the upper portion of the insulating substrate 2 and is electrically connected by wire bonding, and thus has the following problems. (1) It cannot cope with an increase in heat loss of the power semiconductor element, that is, an increase in capacity and an increase in speed. (2) The reliability of the power semiconductor element is low. (3) The life of the power semiconductor element is reduced. (4) The size of the cooler for cooling the power semiconductor element increases, and the cost of the power converter also increases.

Accordingly, the present invention has been made in view of the above-mentioned problems, and has been made to reduce the size of a semiconductor module and a cooler which respond to an increase in the capacity and speed of a power semiconductor element, improve reliability, and prevent a reduction in life. An object is to provide a power conversion device with reduced cost.

[0011]

In order to achieve the above object, according to the present invention, in a semiconductor module, a metal electrode is joined to an upper portion of a first insulating substrate.
A metal plate for heat diffusion is joined to the upper part of the metal electrode, and a power semiconductor element is joined to the metal plate for heat diffusion. Further, the power semiconductor element, the heat diffusion metal plate, and the metal electrode are housed in a resin package having an insulating property.
Is pressed into contact with the cooler. Therefore, the heat loss of the power semiconductor element is diffused to reduce the temperature rise,
The reliability of a power semiconductor element is improved, and a reduction in life is suppressed.

According to a second aspect of the present invention, in the semiconductor module, the first insulating substrate is brought into pressure contact with the cooler by attaching the resinous package to the cooler with screws. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

Further, according to a third aspect of the present invention, in the semiconductor module, a thin metal plate is joined to a lower portion of the first insulating substrate, and the first insulating substrate is brought into pressure contact with a cooler via the thin metal plate. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

According to a fourth aspect of the present invention, in the semiconductor module, a metal sheet having a convex shape with respect to the cooler is joined to a lower portion of the first insulating substrate, and the first insulating substrate is formed in the convex shape. And pressurized contact with the cooler through the thin metal plate. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

According to a fifth aspect of the present invention, in the semiconductor module, in the semiconductor module, the first insulating substrate is covered with a thin metal plate having a constant thickness on the lower side at the lower part, and the metal plate and the resin package are bonded at the ends. Then, by attaching the metal plate to the cooler with screws, the first insulating substrate is brought into pressure contact with the cooler via the metal plate. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

According to a sixth aspect of the present invention, in the semiconductor module, the metal plate for heat diffusion bonded to the upper portion of the metal electrode is divided for each power semiconductor element. Furthermore, in the semiconductor module according to the present invention, in the semiconductor module, the upper surface of the metal plate for thermal diffusion has a metal foil whose thermal expansion coefficient is close to that of the power semiconductor element, and the lower surface has a thermal expansion coefficient which is close to that of the first insulating substrate. It has a multilayer structure in which metal foils are joined, and a heat diffusion metal plate is connected to the power semiconductor element via the metal foil,
With an insulating substrate. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

Still further, according to the invention as set forth in claim 8, in the semiconductor module, at least one of the plurality of external lead-out terminals is electrically connected to the power semiconductor element by a wide conductor. Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the reliability of the power semiconductor element is improved, and the shortening of the life is suppressed.

According to a ninth aspect of the present invention, in the semiconductor module, at least one of the plurality of external lead-out terminals is electrically connected to the power semiconductor element by a wide conductor. A second insulating substrate is bonded to the upper part, the second insulating substrate and the resin package are bonded at the ends, and a cooler is also brought into pressure contact with the upper part of the second insulating substrate to generate power semiconductor elements. Dissipate heat loss.

Therefore, the heat loss of the power semiconductor element is diffused to reduce the temperature rise, and since the cooling is performed on both sides, the cooling efficiency is high, and the reliability of the power semiconductor element is further improved.
Suppress shortening of life.

According to a tenth aspect of the present invention, in the semiconductor module, the wide conductor to be joined to the upper part of the power semiconductor element is a metal foil having a thermal expansion coefficient close to that of the power semiconductor element on a lower surface of the wide conductor. Has a multilayer structure in which a second insulating substrate and a metal foil having a coefficient of thermal expansion close to each other are joined,
The power semiconductor element is bonded to the second insulating substrate via the metal foil.

Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, the cooling efficiency is high because of the double-side cooling, and the reliability of the power semiconductor element is further improved.
Suppress shortening of life. The invention according to claim 11 is a semiconductor module, in which at least one of the plurality of external lead-out terminals is electrically connected to the power semiconductor element by a wide conductor, and furthermore, a second terminal is provided above the wide conductor. The second insulating substrate is joined, the second green substrate and the resin package are bonded at the ends, and a cooler is joined to the upper part of the second insulating substrate.

Therefore, the heat loss of the power semiconductor element is diffused, the temperature rise is reduced, and since cooling is performed on both sides, the cooling efficiency is high, and the reliability of the power semiconductor element is further improved.
Suppress shortening of life.

Further, according to a twelfth aspect of the present invention, in the semiconductor module, a third insulating substrate is provided above the cooler joined to the upper portion of the second insulating substrate. Therefore, the heat loss of the power semiconductor element is diffused to reduce the temperature rise, and since the cooling is performed on both sides, the cooling efficiency is high, the reliability of the power semiconductor element is further improved, and the life is suppressed from being shortened.

According to a thirteenth aspect of the present invention, in the semiconductor module, ceramic fibers are combined with at least one of the first insulating substrate and the second insulating substrate. Therefore, the heat loss of the power semiconductor element is diffused to reduce the temperature rise, and since the cooling is performed on both sides, the cooling efficiency is high, the reliability of the power semiconductor element is further improved, and the life is suppressed from being shortened.

According to a fourteenth aspect of the present invention, the semiconductor module is used in a power converter. Therefore, by using the above-described semiconductor module for the power converter, the size of the cooler can be reduced, so that the power converter can be reduced in size and cost.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) First, the first embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS. FIG. 1 is a plan view showing the present embodiment, and FIG. 2 is a cross-sectional view taken along line AA of FIG.

FIG. 3 shows a calculation result of a temperature rise of the power semiconductor element 4 and the first insulating substrate 2 when a transient heat loss occurs in the present embodiment. 1 and 2, a semiconductor module according to the present embodiment has a metal electrode 3 joined to an upper portion of a first insulating substrate 2 and a metal electrode 3.
A metal plate for heat diffusion 11 is joined to the upper part of the semiconductor chip, and power semiconductor elements 4 and 5 are joined to the upper part of the metal plate for heat diffusion 11. As a material of the heat diffusion metal plate 11, for example, copper (C
u) is used. The power semiconductor elements 4 and 5, the heat diffusion metal plate 11 and the metal electrode 3 are housed in a resin package 6 having an insulating property, and the first insulating substrate 2 and the resin package 6 are bonded at the ends. I have. An insulating gel 7 is sealed inside the resin package 6. Further, by attaching the resinous package 6 to the cooler with screws, the first insulating substrate is brought into pressure contact with the cooler, and the heat loss generated in the power semiconductor elements 4 and 5 is radiated.

The external lead terminals 8, 9 and the power semiconductor elements 4, 5 are electrically connected by wire bonding 10. In the semiconductor module configured as in the present embodiment, when the power semiconductor elements 4 and 5 are energized, heat loss occurs. Power semiconductor element 4,
Since an insulating gel 7 which is a heat insulating material is sealed in the upper part of 5, most of the heat loss generated in the power semiconductor elements 4 and 5 is conducted to the lower heat diffusion metal plate 11. . The heat loss transmitted to the lower heat diffusion metal plate 11 diffuses inside the heat diffusion metal plate 11 and conducts heat to the lower first insulating substrate 2. The first insulating substrate 2 is brought into pressure contact with the cooler, and the heat loss is transmitted to the cooler and radiated.

The power semiconductor element 4 is 11 mm square, and the heat diffusion metal plate 11 is made of copper and has a thickness of 2.7 m.
m, when the first insulating substrate 2 is made of alumina and a transient heat loss occurs, the power semiconductor element 4 and the first insulating substrate 2
FIG. 3 shows the calculation results of the temperature rise of the sample.

The heat diffusion metal plate 11 diffuses heat loss in the upper part of the first insulating substrate 2 having a poor thermal conductivity, so that heat concentration does not occur on the first insulating substrate 2 and the conventional structure shown in FIG. The temperature rise of the power semiconductor element 4 after 12 seconds is greatly reduced from 32K to 23K, and the temperature rise after 13.5 seconds is significantly reduced from 87K to 54K in comparison with the semiconductor module of FIG.

In the present embodiment, since the heat loss of the power semiconductor element can be diffused and the temperature rise of the power semiconductor element can be reduced, it is possible to cope with an increase in heat loss, that is, an increase in capacity and speed. Can be. In addition, the reliability of the power semiconductor element can be improved and the life can be prevented from being shortened. Furthermore, since the temperature rise of the power semiconductor element can be reduced, the size of the cooler for cooling the power semiconductor element can be reduced, and the cost can be reduced.

Second Embodiment Next, a second embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. 4 and FIG.

FIG. 4 is a plan view showing this embodiment, and FIG. 5 is a sectional view taken along line AA of FIG. 4 and 5, in the semiconductor module according to the present embodiment, a metal thin plate 12 is joined to a lower portion of a first insulating substrate 2, and the first insulating substrate 2 is pressed to a cooler via the metal thin plate 12. Make contact. The material of the metal thin plate 12 is, for example, copper (Cu), aluminum (Al), or silver (Ag). Other structures are the same as in the first embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the first embodiment, the first insulating substrate 2 is connected to a cooler through a very thin and soft metal thin plate 12. The first insulating substrate 2
The contact heat resistance is reduced, and the temperature rise of the power semiconductor element 4 can be reduced more than in the first embodiment. At this time, an effect higher than that of the first embodiment can be obtained.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS. 6 and 7. FIG.

FIG. 6 is a plan view showing this embodiment, and FIG. 7 is a sectional view taken along the line AA of FIG. 6 and 7, in the semiconductor module according to the present embodiment, a metal thin plate 12 having a convex shape with respect to a cooler is joined to a lower portion of a first insulating substrate 2 so that the first insulating substrate 2 is formed. It is brought into pressure contact with the cooler via the metal sheet 12 having a convex shape. The material of the metal sheet 12 is, for example, copper (Cu), aluminum (Al), or silver (Ag). Other structures are the same as in the first embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the first embodiment, the first insulating substrate 2 is made very thin and soft, and is convex with respect to the cooler. Since the cooling device is brought into contact with the cooling device via the thin metal plate 12 having a shape, the adhesion between the first insulating substrate 2 and the cooling device is improved more than the effect of the second embodiment, the contact thermal resistance is reduced, and The temperature rise of the semiconductor element 4 can be reduced more than in the second embodiment. At this time, the effect more than that of the second embodiment can be obtained.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS. 8 and 9. FIG.

FIG. 8 is a plan view showing this embodiment, and FIG. 9 is a sectional view taken along the line AA of FIG. 8 and 9, in the semiconductor module according to the present embodiment, the first insulating substrate 2 is covered with a thin metal plate 18 having a small thickness on the lower side at the lower portion, and the metal plate 18 and the resin package are further terminated. The first insulating substrate is brought into pressure contact with the cooler through the metal plate 18 by attaching the metal plate 18 to the cooler with screws. The material of the metal plate 18 is, for example, aluminum (Al). Other structures are the same as in the first embodiment.

In the semiconductor module constructed as in the present embodiment, in addition to the same operation as in the first embodiment, the first insulating substrate 2 is provided with a very thin metal plate 18 at the lower part.
Therefore, the contact between the first insulating substrate 2 and the cooler is improved as compared with the first embodiment, the contact thermal resistance is reduced, and the temperature rise of the power semiconductor element 4 is reduced. 1
It can be reduced more than the embodiment. At this time, an effect higher than that of the first embodiment can be obtained.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS. 10 and 11. FIG.

FIG. 10 is a plan view showing the present embodiment.
FIG. 11 is a sectional view taken along line AA of FIG. In FIGS. 10 and 11, in the semiconductor module according to the present embodiment, the heat diffusion metal plate 11 bonded to the upper portion of the metal electrode 3 is divided for each of the power semiconductor elements 4 and 5. Other structures are the same as in the third embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the third embodiment, the heat diffusion metal plate 11 is divided for each power semiconductor element. The thermal expansion of the metal plate for heat diffusion 11 during energization is smaller than that in the case where it is not divided. Thereby, the thermal stress generated due to the difference in thermal expansion between the power semiconductor elements 4, 5 and the first insulating substrate 2 and the thermal diffusion metal plate 11 can be reduced, and the thermal stress can be dispersed. At this time, in addition to the same effects as in the third embodiment, the reliability of the power semiconductor element can be improved and the life can be prevented from being shortened.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. 12 and FIG.

FIG. 12 is a plan view showing the present embodiment.
FIG. 13 is a sectional view taken along line AA of FIG. 12 and 13, the semiconductor module according to the present embodiment has a metal foil 13 having a thermal expansion coefficient close to that of the power semiconductor elements 4 and 5 on the upper surface of the metal plate 11 for heat diffusion and the first surface on the lower surface.
Has a multilayer structure in which an insulating substrate and a metal foil 13 having a thermal expansion coefficient close to each other are joined, and the heat diffusion metal plate 11 is connected to the power semiconductor elements 4 and 5 and the first insulating substrate 2 via the metal foil 13.
To join. Other structures are the same as those of the fifth embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the fifth embodiment, the heat diffusion metal plate 11 is connected to the power semiconductor elements 4, 5,.
Since the first insulating substrate 2 is bonded to the first insulating substrate 2 via the metal foil 13 having a similar thermal expansion coefficient, the thermal stress generated in the power semiconductor elements 4 and 5 and the first insulating substrate 2 is reduced to at least the fifth embodiment. Can be reduced. At this time, in addition to the same effects as in the fifth embodiment, the reliability of the power semiconductor element can be further improved, and the life can be prevented from being shortened.

(Seventh Embodiment) Next, a seventh embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. 14 and FIG.

FIG. 14 is a plan view showing the present embodiment.
FIG. 15 is a sectional view taken along line AA of FIG. 14 and 15, the semiconductor module according to the present embodiment includes power semiconductor elements 4 and 5 and external lead terminals 8 and 9.
Are electrically connected by the wide conductor 14. Other structures are the same as in the sixth embodiment.

In the semiconductor module configured as in this embodiment, in addition to the same operation as in the sixth embodiment, the wide conductor 14 absorbs the transient heat loss of the power semiconductor elements 4 and 5. 3, the temperature rise of the power semiconductor element 4 after 13.5 seconds shown in FIG. 3 is reduced to 54K or less. Furthermore, since the power semiconductor elements 4 and 5 are electrically connected by the wide conductor 14, the number of connection points by the wire bonding 10 is reduced,
The possibility of cutting due to thermal stress is reduced.

At this time, in addition to the same effects as in the sixth embodiment, the rise in temperature of the power semiconductor element can be further reduced. In addition, the reliability of the power semiconductor element can be improved and the life can be prevented from being shortened.

(Eighth Embodiment) Next, an eighth embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. 16 and FIG.

FIG. 16 is a plan view showing the present embodiment.
FIG. 17 is a sectional view taken along line AA of FIG. In FIGS. 16 and 17, the semiconductor module according to the present embodiment includes power semiconductor elements 4 and 5 and external lead terminals 8 and 9.
Are electrically connected by the wide conductor 14. Further, a second insulating substrate 15 is joined to the upper portion of the wide conductor 14 to
The insulating substrate 15 and the resin package 6 are bonded at the ends. A cooler can also be mounted on the upper part of the second insulating substrate 15, and the cooler is brought into pressure contact with a screw to radiate heat loss generated in the power semiconductor elements 4 and 5. Other structures are the same as those of the seventh embodiment.

In the semiconductor module configured as in the present embodiment, when the power semiconductor elements 4 and 5 are energized, heat loss occurs. Power semiconductor element 4,
Part of the heat loss generated in the power semiconductor devices 4 and 5
And the remaining heat loss is conducted to the wide conductor 14 joined to the upper part.

The heat loss diffused into the heat diffusion metal plate 11 is conducted to the first insulating substrate 2 through the metal electrode 3.
A cooler is attached to the first insulating substrate 2 to dissipate heat loss. Similarly, the heat loss thermally conducted to the wide conductor 14 is thermally diffused inside the wide conductor 14 and thermally conducted to the second insulating substrate 15. A small subcooler is attached to the second insulating substrate 15 to dissipate heat loss.

As described above, the power semiconductor elements 4 and 5
Since both sides are cooled, the cooling efficiency is high. Further, transient heat loss of the power semiconductor elements 4 and 5 can be absorbed by the heat capacity of the wide conductor 14. Thus, the temperature rise of the power semiconductor elements 4 and 5 is reduced more than in the seventh embodiment.

Furthermore, since the power semiconductor elements 4 and 5 are electrically connected by the wide conductors 14, the number of connection points by the wire bonding 10 is reduced, and the possibility of cutting due to thermal stress is reduced.

At this time, in addition to the effect similar to that of the seventh embodiment, the temperature rise of the power semiconductor element can be further reduced. In addition, the reliability of the power semiconductor element can be improved and the life can be prevented from being shortened.

(Ninth Embodiment) Next, a ninth embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. 18 and FIG.

FIG. 18 is a plan view showing the present embodiment.
FIG. 19 is a sectional view taken along line AA of FIG. 18 and 19, the semiconductor module according to the present embodiment has power semiconductor elements 4, 5 on the lower surface of wide conductor 14.
And a second insulating substrate 15 and a metal foil 13 having a similar thermal expansion coefficient are bonded to the upper surface of the power semiconductor element 4 via the metal foil 13. 5. The second insulating substrate 15 and the wide conductor 14 are joined. Other structures are the same as those of the eighth embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the eighth embodiment, the wide conductor 14 is connected to the power semiconductor elements 4 and 5 and the second insulating substrate 15. Since the bonding is performed via the metal foil 13 having a similar thermal expansion coefficient, the thermal stress generated in the power semiconductor elements 4, 5 and the second insulating substrate 2 can be reduced more than in the eighth embodiment. At this time, in addition to the same effects as in the eighth embodiment, the reliability of the power semiconductor element can be further improved, and the life can be prevented from being shortened.

(Tenth Embodiment) Next, a tenth embodiment of the present invention will be described with reference to FIGS.

FIG. 20 is a plan view showing the present embodiment.
FIG. 21 is a sectional view taken along line AA of FIG. 20 and 21, the semiconductor module according to the present embodiment includes power semiconductor elements 4 and 5 and external lead terminals 8 and 9.
Are electrically connected by the wide conductor 14. Further, a second insulating substrate 15 is joined to the upper portion of the wide conductor 14 to
The insulating substrate 15 and the resin package 6 are bonded at the ends. Further, a cooler 16 is joined to the upper part of the second insulating substrate 15. Other structures are the same as in the tenth embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the ninth embodiment, in order to join the cooler 16 to the second insulating substrate 15, pressure is applied by screws. The contact thermal resistance existing between the second insulating substrate 15 and the cooler 16 when contact is made is eliminated. Thereby, the temperature rise of the power semiconductor elements 4 and 5 can be reduced more than in the ninth embodiment. At this time, the ninth
The above-described embodiment has more effects than the effects of the embodiment.

(Eleventh Embodiment) Next, an eleventh embodiment of the present invention will be described with reference to FIGS.

FIG. 22 is a plan view showing the present embodiment.
FIG. 23 is a sectional view taken along line AA of FIG. 22 and 23, a semiconductor module according to the present embodiment includes a cooler 16 joined to an upper portion of a second insulating substrate 15.
The third insulating substrate 17 is provided on the top of the substrate. Other structures are the same as in the tenth embodiment.

In the semiconductor module configured as in the present embodiment, in addition to the same operation as in the tenth embodiment, a plurality of external lead terminals 8 and 9 and a cooler are provided by the third insulating substrate 17. 16 can be insulated. Further, the duct of the cooler 16 is constituted by the third insulating substrate 17, and the cooling air flowing to the cooler 16 can be rectified, thereby increasing the cooling efficiency. Thereby, the temperature rise of the power semiconductor elements 4 and 5 can be reduced more than in the tenth embodiment. At this time, in addition to the same effects as those of the tenth embodiment, the temperature rise of the power semiconductor element can be further reduced.
Further, the reliability of the power semiconductor element can be improved.

(Twelfth Embodiment) Next, a twelfth embodiment of the present invention will be described. In the present embodiment, in a semiconductor module, one or both of the first insulating substrate 2 and the second insulating substrate 15 are combined with, for example, ceramic fibers in a lateral direction. Other structures are the same as those in the above embodiment.

In the semiconductor module thus configured, since the first insulating substrate 2 and the second insulating substrate 15 are combined with the ceramic fibers in the lateral direction, the strength is improved, and the semiconductor module can be broken by thermal stress. Properties can be greatly reduced. At this time, in addition to the same effects as in the above embodiment, the reliability of the power semiconductor element can be further improved.

[0070]

As described above, according to the present invention,
Increased heat loss of power semiconductor elements, that is, increased capacity,
It is possible to cope with an increase in speed, improve the reliability of the power semiconductor element, and prevent the life of the power semiconductor element from being shortened. Further, the size of the cooler for cooling the power semiconductor element can be reduced, and the cost of the power converter can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view showing a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a graph showing a calculation result of a temperature rise of the power semiconductor element when a transient heat loss occurs according to the first embodiment of the present invention.

FIG. 4 is a plan view showing a second embodiment of the present invention.

FIG. 5 is a sectional view taken along line AA of FIG. 4;

FIG. 6 is a plan view showing a third embodiment of the present invention.

FIG. 7 is a sectional view taken along the line AA of FIG. 6;

FIG. 8 is a plan view showing a fourth embodiment of the present invention.

FIG. 9 is a sectional view taken along line AA of FIG. 8;

FIG. 10 is a plan view showing a fifth embodiment of the present invention.

FIG. 11 is a sectional view taken along line AA of FIG. 10;

FIG. 12 is a plan view showing a sixth embodiment of the present invention.

FIG. 13 is a sectional view taken along line AA of FIG. 12;

FIG. 14 is a plan view showing a seventh embodiment of the present invention.

FIG. 15 is a sectional view taken along line AA of FIG. 14;

FIG. 16 is a plan view showing an eighth embodiment of the present invention.

FIG. 17 is a sectional view taken along line AA of FIG. 16;

FIG. 18 is a plan view showing a ninth embodiment of the present invention.

FIG. 19 is a sectional view taken along line AA of FIG. 18;

FIG. 20 is a plan view showing a tenth embodiment of the present invention.

FIG. 21 is a sectional view taken along line AA of FIG. 20;

FIG. 22 is a plan view showing an eleventh embodiment of the present invention.

FIG. 23 is a sectional view taken along the line AA of FIG. 22;

FIG. 24 is a plan view showing a conventional semiconductor module.

FIG. 25 is a sectional view taken along line AA of FIG. 24;

FIG. 26 is a graph showing a calculation result of a temperature rise of a power semiconductor element when a transient heat loss of a conventional semiconductor module occurs.

[Explanation of symbols]

1: heat dissipation metal plate, 2: first insulating substrate, 3: metal electrode, 4, 5: power semiconductor element, 6: resin package, 7: insulating gel, 8, 9: external lead terminal, 1
0: wire bonding, 11: metal plate for heat diffusion, 1
2: metal thin plate, 13: metal foil, 14: wide conductor, 15:
Second insulating substrate, 16: cooler, 17: third insulating substrate, 18: metal plate

Claims (14)

[Claims] 1. A semiconductor module having a plurality of power semiconductor elements and a plurality of external lead terminals electrically connected to the power semiconductor elements, wherein a metal electrode is bonded to an upper portion of the first insulating substrate. A metal plate for heat diffusion is joined to an upper part of the metal electrode, a power semiconductor element is joined to an upper part of the metal plate for heat diffusion, a power semiconductor element,
The metal plate for heat diffusion and the metal electrode are housed in a resin package having an insulating property, and the first insulating substrate and the resin package are bonded at an end portion, and the first green substrate is pressed against a cooler. A semiconductor module for dissipating heat loss generated in a power semiconductor element by contacting the semiconductor module. 2. The semiconductor module according to claim 1, wherein the first insulating substrate is brought into pressure contact with the cooler by attaching the resinous package to the cooler with screws. 3. A thin metal plate is joined to a lower portion of the first insulating substrate, and the first insulating substrate is brought into pressure contact with a cooler via the thin metal plate. Semiconductor module. 4. A metal sheet convex to the cooler is joined to a lower portion of the first insulating substrate, and the first insulating substrate is brought into press contact with the cooler via the metal sheet having the convex shape. The semiconductor module according to claim 1, wherein the semiconductor module is operated. 5. The first insulating substrate is covered with a metal plate having a small thickness at the lower side and a thin portion at a lower portion, and furthermore, the metal plate and the resin package are adhered at ends, and the metal plate is attached to the cooler by screws. 2. The semiconductor module according to claim 1, wherein the first insulating substrate is brought into pressure contact with the cooler via the metal plate. 6. The semiconductor according to claim 1, wherein the heat diffusion metal plate bonded to the upper part of the metal electrode is divided for each power semiconductor element. module. 7. A heat diffusion metal plate joined to an upper portion of the metal electrode, a metal foil having a thermal expansion coefficient close to that of the power semiconductor element on an upper surface of the heat diffusion metal plate, and a first insulating material on a lower surface. It has a multilayer structure in which a substrate and a metal foil having a coefficient of thermal expansion close to each other are joined, and a power semiconductor element via the metal foil,
The semiconductor module according to claim 1, wherein the semiconductor module is bonded to a first insulating substrate. 8. The power semiconductor device according to claim 1, wherein at least one of the plurality of external lead terminals is electrically connected to the power semiconductor element by a wide conductor. A semiconductor module according to any one of the above. 9. At least one of the plurality of external lead-out terminals is electrically connected to the power semiconductor element by a wide conductor, and a second insulating substrate is joined to an upper portion of the wide conductor. The second insulating substrate and the resin package are bonded at their ends, and a cooler is also brought into pressure contact with the upper portion of the second insulating substrate to dissipate heat loss generated in the power semiconductor element. The semiconductor module according to any one of claims 1 to 8, wherein: 10. A wide conductor bonded to an upper part of the power semiconductor element, a metal foil having a thermal expansion coefficient close to that of the power semiconductor element on a lower surface of the wide conductor, and a second insulating substrate formed on an upper surface by thermal expansion. 10. A multilayer structure in which metal foils having similar coefficients are bonded to each other, and are bonded to the power semiconductor element and the second insulating substrate via the metal foil. The semiconductor module according to any one of the above. 11. At least one of the plurality of external lead-out terminals is electrically connected to the power semiconductor element by a wide conductor, and a second insulating substrate is joined to an upper portion of the wide conductor. 2. The cooling device according to claim 1, wherein the second insulating substrate and the resin package are bonded at an end portion, and a cooler is joined to an upper portion of the second insulating substrate.
The semiconductor module according to claim 10. 12. The semiconductor module according to claim 1, wherein a third insulating substrate is provided above a cooler joined to an upper portion of the second insulating substrate. 13. The semiconductor module according to claim 1, wherein ceramic fibers are compounded on at least one of the first insulating substrate and the second insulating substrate. . 14. A power converter using the semiconductor module according to claim 1. Description: