JP2000516769A - 超低電力―遅延積ｎｎｎ／ｐｐｐロジック装置 - Google Patents

超低電力―遅延積ｎｎｎ／ｐｐｐロジック装置

Info

Publication number
JP2000516769A
JP2000516769A JP10509786A JP50978698A JP2000516769A JP 2000516769 A JP2000516769 A JP 2000516769A JP 10509786 A JP10509786 A JP 10509786A JP 50978698 A JP50978698 A JP 50978698A JP 2000516769 A JP2000516769 A JP 2000516769A
Authority
JP
Japan
Prior art keywords
thickness
semiconductor device
region
bulk
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10509786A
Other languages
English (en)
Japanese (ja)
Inventor
ナサンソン，ハーベイ，エヌ．
Original Assignee
ノースロップ グラマン コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ノースロップ グラマン コーポレーション filed Critical ノースロップ グラマン コーポレーション
Publication of JP2000516769A publication Critical patent/JP2000516769A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP10509786A 1996-08-16 1997-07-31 超低電力―遅延積ｎｎｎ／ｐｐｐロジック装置 Pending JP2000516769A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/689,946 US5969385A (en) 1995-08-17 1996-08-16 Ultra-low power-delay product NNN/PPP logic devices
US08/689,946 1996-08-16
PCT/US1997/013481 WO1998007194A1 (en) 1996-08-16 1997-07-31 Ultra-low power-delay product nnn/ppp logic devices

Publications (1)

Publication Number Publication Date
JP2000516769A true JP2000516769A (ja) 2000-12-12

Family

ID=24770482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10509786A Pending JP2000516769A (ja) 1996-08-16 1997-07-31 超低電力―遅延積ｎｎｎ／ｐｐｐロジック装置

Country Status (5)

Country Link
US (1) US5969385A (de)
EP (1) EP0944923B1 (de)
JP (1) JP2000516769A (de)
DE (1) DE69708147T2 (de)
WO (1) WO1998007194A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010039463A (ja) * 2008-07-31 2010-02-18 ▲しい▼創電子股▲ふん▼有限公司 ドット反転駆動システムの極性切換構造

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100374551B1 (ko) * 2000-01-27 2003-03-04 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
US6558973B2 (en) * 2001-01-22 2003-05-06 Honeywell International Inc. Metamorphic long wavelength high-speed photodiode
US6486511B1 (en) * 2001-08-30 2002-11-26 Northrop Grumman Corporation Solid state RF switch with high cutoff frequency
US20040079997A1 (en) * 2002-10-24 2004-04-29 Noriyuki Miura Semiconductor device and metal-oxide-semiconductor field-effect transistor
US20090230440A1 (en) * 2008-03-13 2009-09-17 Honeywell International Inc. Single event transient hardened majority carrier field effect transistor
US10697447B2 (en) * 2014-08-21 2020-06-30 Fenwal, Inc. Magnet-based systems and methods for transferring fluid

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs
JPS63283056A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd Ｃｍｏｓ集積回路
JPH0214579A (ja) * 1988-07-01 1990-01-18 Hitachi Ltd 電界効果トランジスタ
JPH02234461A (ja) * 1989-03-08 1990-09-17 Hitachi Ltd 半導体装置
WO1994015364A1 (en) * 1992-12-29 1994-07-07 Honeywell Inc. Depletable semiconductor on insulator low threshold complementary transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010039463A (ja) * 2008-07-31 2010-02-18 ▲しい▼創電子股▲ふん▼有限公司 ドット反転駆動システムの極性切換構造

Also Published As

Publication number Publication date
WO1998007194A1 (en) 1998-02-19
EP0944923A1 (de) 1999-09-29
DE69708147T2 (de) 2002-06-20
EP0944923B1 (de) 2001-11-07
US5969385A (en) 1999-10-19
DE69708147D1 (de) 2001-12-13

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