JP2004266155A5 - - Google Patents
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- Publication number
- JP2004266155A5 JP2004266155A5 JP2003056093A JP2003056093A JP2004266155A5 JP 2004266155 A5 JP2004266155 A5 JP 2004266155A5 JP 2003056093 A JP2003056093 A JP 2003056093A JP 2003056093 A JP2003056093 A JP 2003056093A JP 2004266155 A5 JP2004266155 A5 JP 2004266155A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- aqueous dispersion
- amorphous silicon
- chemical mechanical
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005498 polishing Methods 0.000 claims 22
- 239000006185 dispersion Substances 0.000 claims 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 9
- 229920005591 polysilicon Polymers 0.000 claims 9
- 239000000126 substance Substances 0.000 claims 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 8
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims 5
- 239000012736 aqueous medium Substances 0.000 claims 3
- -1 inorganic acid salt Chemical class 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 238000002156 mixing Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000006061 abrasive grain Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 229920003169 water-soluble polymer Polymers 0.000 claims 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003056093A JP2004266155A (ja) | 2003-03-03 | 2003-03-03 | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
| US10/694,890 US7005382B2 (en) | 2002-10-31 | 2003-10-29 | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
| TW092130274A TWI296282B (en) | 2002-10-31 | 2003-10-30 | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
| EP20030024809 EP1416025A1 (fr) | 2002-10-31 | 2003-10-30 | Suspension aqueuse pour polissage mécano-chimique, procédé de polissage chimico-mécanique, procédé de fabrication de dispositifs semi-conducteurs et matériel pour la préparation d'une dispersion aqueuse |
| KR1020030077050A KR20040038882A (ko) | 2002-10-31 | 2003-10-31 | 화학 기계 연마용 수계 분산체, 화학 기계 연마 방법 및반도체 장치의 제조 방법 및 화학 기계 연마용 수계분산체 제조용 재료 |
| CNB2003101047115A CN100366694C (zh) | 2002-10-31 | 2003-10-31 | 化学机械抛光用水分散体及其用途和所用的水分散体材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003056093A JP2004266155A (ja) | 2003-03-03 | 2003-03-03 | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004266155A JP2004266155A (ja) | 2004-09-24 |
| JP2004266155A5 true JP2004266155A5 (fr) | 2005-09-02 |
Family
ID=33119918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003056093A Pending JP2004266155A (ja) | 2002-10-31 | 2003-03-03 | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004266155A (fr) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006140361A (ja) * | 2004-11-12 | 2006-06-01 | Showa Denko Kk | 研磨組成物 |
| JPWO2006098141A1 (ja) * | 2005-03-16 | 2008-08-21 | 旭硝子株式会社 | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| JP2006287051A (ja) * | 2005-04-01 | 2006-10-19 | Kao Corp | 半導体基板研磨液組成物用添加剤 |
| US20110045741A1 (en) * | 2005-04-28 | 2011-02-24 | Techno Semichem Co., Ltd. | Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer |
| JP2006344786A (ja) * | 2005-06-09 | 2006-12-21 | Hitachi Chem Co Ltd | ポリシリコン用研磨材およびその研磨方法 |
| JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR100827594B1 (ko) * | 2006-11-07 | 2008-05-07 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
| US8512593B2 (en) | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
| WO2007055278A1 (fr) * | 2005-11-11 | 2007-05-18 | Hitachi Chemical Co., Ltd. | Agent de polissage pour oxyde de silicium, additif liquide et procede de polissage |
| JP2007258510A (ja) * | 2006-03-24 | 2007-10-04 | Toshiba Corp | 半導体装置の製造方法 |
| EP2061070A4 (fr) * | 2006-09-11 | 2010-06-02 | Asahi Glass Co Ltd | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
| KR20100014849A (ko) * | 2007-02-27 | 2010-02-11 | 히다치 가세고교 가부시끼가이샤 | 실리콘막용 ｃｍｐ 슬러리 |
| JP5333222B2 (ja) * | 2007-09-21 | 2013-11-06 | 日立化成株式会社 | シリコン膜研磨用ｃｍｐスラリー及び研磨方法 |
| JP5178121B2 (ja) * | 2007-09-28 | 2013-04-10 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| US10144849B2 (en) | 2008-02-01 | 2018-12-04 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| KR101341875B1 (ko) * | 2008-04-30 | 2013-12-16 | 한양대학교 산학협력단 | 상변환 물질 연마용 슬러리 및 이를 이용한 상변환 물질의 패터닝 방법 |
| JP5297695B2 (ja) | 2008-05-30 | 2013-09-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | スラリー供給装置及び同装置を用いる半導体ウェーハの研磨方法 |
| JP2010269374A (ja) * | 2009-05-19 | 2010-12-02 | Adeka Corp | 安定化過硫酸アンモニウム水溶液、化学機械研磨用組成物および化学機械研磨方法 |
| JP5833286B2 (ja) * | 2009-09-29 | 2015-12-16 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| DE112011102297B4 (de) * | 2010-07-08 | 2020-10-08 | Sumco Corporation | Verfahren zum Polieren von Siliziumwafern |
| US9425037B2 (en) * | 2011-01-21 | 2016-08-23 | Cabot Microelectronics Corporation | Silicon polishing compositions with improved PSD performance |
| JP6366139B2 (ja) * | 2014-12-25 | 2018-08-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物の製造方法 |
| JP2017005050A (ja) | 2015-06-08 | 2017-01-05 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
| JP6533439B2 (ja) * | 2015-09-15 | 2019-06-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US10106705B1 (en) * | 2017-03-29 | 2018-10-23 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods of use thereof |
| WO2019181487A1 (fr) * | 2018-03-23 | 2019-09-26 | 富士フイルム株式会社 | Liquide de polissage, et procédé de polissage chimique et mécanique |
| KR102833409B1 (ko) * | 2018-10-24 | 2025-07-14 | 솔브레인 주식회사 | 연마용 조성물 및 이를 이용하는 연마 방법 |
| JP6724127B2 (ja) * | 2018-12-28 | 2020-07-15 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
| JP2019131814A (ja) * | 2019-03-08 | 2019-08-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
| JP7692694B2 (ja) * | 2020-12-23 | 2025-06-16 | ニッタ・デュポン株式会社 | 研磨用組成物及び研磨用組成物製造用キット |
| CN115011180B (zh) * | 2022-06-24 | 2023-05-16 | 浙江奥首材料科技有限公司 | 双组份基液、切割保护液、制备方法、用途及切割方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4462188A (en) * | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
| JP2889810B2 (ja) * | 1994-03-14 | 1999-05-10 | 三菱マテリアル株式会社 | ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤 |
| JPH10309660A (ja) * | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
| JP3457144B2 (ja) * | 1997-05-21 | 2003-10-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4052607B2 (ja) * | 1998-04-20 | 2008-02-27 | 株式会社東芝 | 研磨剤及び半導体基板のポリッシング方法 |
| US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
| KR100398141B1 (ko) * | 2000-10-12 | 2003-09-13 | 아남반도체 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법 |
| US6612911B2 (en) * | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
| JP3440419B2 (ja) * | 2001-02-02 | 2003-08-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002334859A (ja) * | 2001-05-08 | 2002-11-22 | Hitachi Ltd | 多結晶シリコンの研磨方法 |
-
2003
- 2003-03-03 JP JP2003056093A patent/JP2004266155A/ja active Pending
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