JP2005129916A - ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 - Google Patents

ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 Download PDF

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JP2005129916A
JP2005129916A JP2004282947A JP2004282947A JP2005129916A JP 2005129916 A JP2005129916 A JP 2005129916A JP 2004282947 A JP2004282947 A JP 2004282947A JP 2004282947 A JP2004282947 A JP 2004282947A JP 2005129916 A JP2005129916 A JP 2005129916A
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Prior art keywords
laser
optical element
energy distribution
beam spot
side direction
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JP2004282947A
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JP2005129916A5 (2
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Tomoaki Moriwaka
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005129916A5 publication Critical patent/JP2005129916A5/ja
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JP2004282947A 2003-09-30 2004-09-29 ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 Withdrawn JP2005129916A (ja)

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JP2004282947A JP2005129916A (ja) 2003-09-30 2004-09-29 ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法

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JP2003341383 2003-09-30
JP2004282947A JP2005129916A (ja) 2003-09-30 2004-09-29 ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法

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JP2005129916A true JP2005129916A (ja) 2005-05-19
JP2005129916A5 JP2005129916A5 (2) 2007-11-08

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194605A (ja) * 2005-12-20 2007-08-02 Semiconductor Energy Lab Co Ltd レーザ照射装置、及び半導体装置の作製方法
JP2008091811A (ja) * 2006-10-05 2008-04-17 Ihi Corp レーザアニール方法及びレーザアニール装置
JP2009016541A (ja) * 2007-07-04 2009-01-22 Semiconductor Energy Lab Co Ltd レーザアニール装置及びレーザアニール方法
JP2010507112A (ja) * 2006-10-18 2010-03-04 パンチ グラフィックス プレプレス ジャーマニー ゲーエムベーハー 照明装置
US8525070B2 (en) 2005-12-20 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848013A (ja) * 1981-09-18 1983-03-19 Toshiba Corp レ−ザ装置
JPH09160034A (ja) * 1995-12-14 1997-06-20 Casio Comput Co Ltd 液晶プロジェクタ
JP2001007045A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp レーザ熱処理用光学系およびレーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP2003211280A (ja) * 2002-01-21 2003-07-29 Nippon Sheet Glass Co Ltd レーザ発生装置、レーザ発生方法およびレーザを用いた加工方法
JP2003218054A (ja) * 2002-01-21 2003-07-31 Sumitomo Heavy Ind Ltd レーザビーム長尺化装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848013A (ja) * 1981-09-18 1983-03-19 Toshiba Corp レ−ザ装置
JPH09160034A (ja) * 1995-12-14 1997-06-20 Casio Comput Co Ltd 液晶プロジェクタ
JP2001007045A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp レーザ熱処理用光学系およびレーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP2003211280A (ja) * 2002-01-21 2003-07-29 Nippon Sheet Glass Co Ltd レーザ発生装置、レーザ発生方法およびレーザを用いた加工方法
JP2003218054A (ja) * 2002-01-21 2003-07-31 Sumitomo Heavy Ind Ltd レーザビーム長尺化装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194605A (ja) * 2005-12-20 2007-08-02 Semiconductor Energy Lab Co Ltd レーザ照射装置、及び半導体装置の作製方法
US8525070B2 (en) 2005-12-20 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP2008091811A (ja) * 2006-10-05 2008-04-17 Ihi Corp レーザアニール方法及びレーザアニール装置
JP2010507112A (ja) * 2006-10-18 2010-03-04 パンチ グラフィックス プレプレス ジャーマニー ゲーエムベーハー 照明装置
JP2009016541A (ja) * 2007-07-04 2009-01-22 Semiconductor Energy Lab Co Ltd レーザアニール装置及びレーザアニール方法

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