JP2007123861A5 - - Google Patents

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Publication number: JP2007123861A5
Authority: JP; Japan
Prior art keywords: oxide semiconductor; gate electrode; film; forming; oxide
Prior art date: 2006-09-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2006262991A

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English (en)

Japanese (ja)

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JP2007123861A (ja

JP5064747B2 (ja

Filing date

2006-09-27

Publication date

2008-09-18

2006-09-27 Application filed filed Critical

2006-09-27 Priority to JP2006262991A priority Critical patent/JP5064747B2/ja

2006-09-27 Priority claimed from JP2006262991A external-priority patent/JP5064747B2/ja

2007-05-17 Publication of JP2007123861A publication Critical patent/JP2007123861A/ja

2008-09-18 Publication of JP2007123861A5 publication Critical patent/JP2007123861A5/ja

2012-10-31 Application granted granted Critical

2012-10-31 Publication of JP5064747B2 publication Critical patent/JP5064747B2/ja

Status Active legal-status Critical Current

2026-09-27 Anticipated expiration legal-status Critical

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239000004065 semiconductor Substances 0.000 claims 53
238000004519 manufacturing process Methods 0.000 claims 12
238000000034 method Methods 0.000 claims 12
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
238000010438 heat treatment Methods 0.000 claims 7
239000000758 substrate Substances 0.000 claims 7
239000011787 zinc oxide Substances 0.000 claims 4
229910000838 Al alloy Inorganic materials 0.000 claims 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
238000010521 absorption reaction Methods 0.000 claims 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
229910052782 aluminium Inorganic materials 0.000 claims 2
CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 2
CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 2
CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 2
238000002425 crystallisation Methods 0.000 claims 2
230000008025 crystallization Effects 0.000 claims 2
239000000395 magnesium oxide Substances 0.000 claims 2
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 2
229910052719 titanium Inorganic materials 0.000 claims 2
239000010936 titanium Substances 0.000 claims 2
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
239000013078 crystal Substances 0.000 claims 1
238000004544 sputter deposition Methods 0.000 claims 1

JP2006262991A 2005-09-29 2006-09-27 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 Active JP5064747B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2006262991A JP5064747B2 (ja)	2005-09-29	2006-09-27	半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2005283782		2005-09-29
JP2005283782		2005-09-29
JP2006262991A JP5064747B2 (ja)	2005-09-29	2006-09-27	半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法

Related Child Applications (8)

Application Number	Title	Priority Date	Filing Date
JP2008200670A Division JP5020190B2 (ja)	2005-09-29	2008-08-04	半導体装置及びその作製方法
JP2009177524A Division JP5137912B2 (ja)	2005-09-29	2009-07-30	半導体装置の作製方法
JP2010129921A Division JP5116804B2 (ja)	2005-09-29	2010-06-07	半導体装置
JP2011008550A Division JP5031109B2 (ja)	2005-09-29	2011-01-19	半導体装置及びその作製方法
JP2012055690A Division JP5640032B2 (ja)	2005-09-29	2012-03-13	半導体装置、モジュール、及び電子機器
JP2012160408A Division JP5640045B2 (ja)	2005-09-29	2012-07-19	半導体装置、電気泳動表示装置、表示モジュール、及び電子機器
JP2012160290A Division JP5478676B2 (ja)	2005-09-29	2012-07-19	半導体装置の作製方法
JP2012160330A Division JP5448280B2 (ja)	2005-09-29	2012-07-19	半導体装置

Publications (3)

Publication Number	Publication Date
JP2007123861A JP2007123861A (ja)	2007-05-17
JP2007123861A5 true JP2007123861A5 (2)	2008-09-18
JP5064747B2 JP5064747B2 (ja)	2012-10-31

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ID=38147305

Family Applications (1)

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JP2006262991A Active JP5064747B2 (ja)	2005-09-29	2006-09-27	半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法

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JP (1)	JP5064747B2 (2)

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TWI535037B (zh)	2008-11-07	2016-05-21	半導體能源研究所股份有限公司	半導體裝置和其製造方法
CN101740631B (zh) *	2008-11-07	2014-07-16	株式会社半导体能源研究所	半导体装置及该半导体装置的制造方法
EP2184783B1 (en)	2008-11-07	2012-10-03	Semiconductor Energy Laboratory Co, Ltd.	Semiconductor device and method for manufacturing the same
JP2010123595A (ja) *	2008-11-17	2010-06-03	Sony Corp	薄膜トランジスタおよび表示装置
JP2010123758A (ja) *	2008-11-19	2010-06-03	Nec Corp	薄膜デバイス及びその製造方法
KR101785887B1 (ko)	2008-11-21	2017-10-16	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 표시 장치
KR101238823B1 (ko) *	2008-11-21	2013-03-04	한국전자통신연구원	박막 트랜지스터 및 그의 제조 방법
JP2012033516A (ja) *	2008-11-26	2012-02-16	Ulvac Japan Ltd	トランジスタ及びその製造方法。
TWI654754B (zh)	2008-11-28	2019-03-21	日商半導體能源研究所股份有限公司	液晶顯示裝置
KR101959185B1 (ko) *	2008-11-28	2019-03-15	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치
TWI585955B (zh)	2008-11-28	2017-06-01	半導體能源研究所股份有限公司	光感測器及顯示裝置
US8344387B2 (en)	2008-11-28	2013-01-01	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9721825B2 (en)	2008-12-02	2017-08-01	Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University	Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9601530B2 (en)	2008-12-02	2017-03-21	Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University	Dual active layer semiconductor device and method of manufacturing the same
US9991311B2 (en)	2008-12-02	2018-06-05	Arizona Board Of Regents On Behalf Of Arizona State University	Dual active layer semiconductor device and method of manufacturing the same
TWI633371B (zh)	2008-12-03	2018-08-21	半導體能源研究所股份有限公司	液晶顯示裝置
JP5491833B2 (ja)	2008-12-05	2014-05-14	株式会社半導体エネルギー研究所	半導体装置
CN102257621B (zh)	2008-12-19	2013-08-21	株式会社半导体能源研究所	晶体管的制造方法
WO2010071183A1 (en) *	2008-12-19	2010-06-24	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
EP2515337B1 (en)	2008-12-24	2016-02-24	Semiconductor Energy Laboratory Co., Ltd.	Driver circuit and semiconductor device
US8114720B2 (en) *	2008-12-25	2012-02-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8383470B2 (en)	2008-12-25	2013-02-26	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8441007B2 (en) *	2008-12-25	2013-05-14	Semiconductor Energy Laboratory Co., Ltd.	Display device and manufacturing method thereof
KR101719350B1 (ko) *	2008-12-25	2017-03-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
JP5590877B2 (ja) *	2008-12-26	2014-09-17	株式会社半導体エネルギー研究所	半導体装置
TWI664619B (zh) *	2009-01-16	2019-07-01	日商半導體能源研究所股份有限公司	液晶顯示裝置及其電子裝置
KR101648927B1 (ko)	2009-01-16	2016-08-17	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
KR100993416B1 (ko)	2009-01-20	2010-11-09	삼성모바일디스플레이주식회사	박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 평판 표시 장치
US8492756B2 (en)	2009-01-23	2013-07-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8436350B2 (en)	2009-01-30	2013-05-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8395740B2 (en) *	2009-01-30	2013-03-12	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device having blue phase liquid crystal and particular electrode arrangement
US8174021B2 (en) *	2009-02-06	2012-05-08	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method of manufacturing the semiconductor device
JP4752927B2 (ja) *	2009-02-09	2011-08-17	ソニー株式会社	薄膜トランジスタおよび表示装置
CN101840936B (zh)	2009-02-13	2014-10-08	株式会社半导体能源研究所	包括晶体管的半导体装置及其制造方法
US8247812B2 (en)	2009-02-13	2012-08-21	Semiconductor Energy Laboratory Co., Ltd.	Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en)	2009-02-20	2012-08-21	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en)	2009-02-25	2014-09-23	Semiconductor Energy Laboratory Co., Ltd.	Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) *	2009-02-27	2014-04-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US20100224880A1 (en) *	2009-03-05	2010-09-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8461582B2 (en)	2009-03-05	2013-06-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US20100224878A1 (en)	2009-03-05	2010-09-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR101671210B1 (ko)	2009-03-06	2016-11-01	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
US20100231842A1 (en) *	2009-03-11	2010-09-16	Semiconductor Energy Laboratory Co., Ltd.	Liquid Crystal Display Device
TWI556323B (zh)	2009-03-13	2016-11-01	半導體能源研究所股份有限公司	半導體裝置及該半導體裝置的製造方法
US8450144B2 (en)	2009-03-26	2013-05-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR101681884B1 (ko)	2009-03-27	2016-12-05	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체장치, 표시장치 및 전자기기
TWI485851B (zh)	2009-03-30	2015-05-21	Semiconductor Energy Lab	半導體裝置及其製造方法
TWI489628B (zh)	2009-04-02	2015-06-21	半導體能源研究所股份有限公司	半導體裝置和其製造方法
US8338226B2 (en)	2009-04-02	2012-12-25	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
TWI476917B (zh)	2009-04-16	2015-03-11	半導體能源研究所股份有限公司	半導體裝置和其製造方法
JP2010276829A (ja) *	2009-05-28	2010-12-09	Sumitomo Chemical Co Ltd	表示装置
JP5564331B2 (ja)	2009-05-29	2014-07-30	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP5521034B2 (ja)	2009-05-29	2014-06-11	アリゾナ・ボード・オブ・リージェンツ，フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステート・ユニバーシティ	フレキシブル半導体デバイスを高温で提供する方法およびそのフレキシブル半導体デバイス
EP2256814B1 (en)	2009-05-29	2019-01-16	Semiconductor Energy Laboratory Co, Ltd.	Oxide semiconductor device and method for manufacturing the same
WO2010150446A1 (ja) *	2009-06-24	2010-12-29	シャープ株式会社	薄膜トランジスタおよびその製造方法、アクティブマトリクス基板、表示パネル、ならびに表示装置
CN102473727B (zh)	2009-06-29	2015-04-01	夏普株式会社	氧化物半导体、薄膜晶体管阵列基板及其制造方法和显示装置
WO2011001881A1 (en)	2009-06-30	2011-01-06	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
WO2011002046A1 (en) *	2009-06-30	2011-01-06	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
CN102473729B (zh)	2009-07-03	2015-01-28	株式会社半导体能源研究所	制造半导体装置的方法
JP5663214B2 (ja)	2009-07-03	2015-02-04	株式会社半導体エネルギー研究所	半導体装置の作製方法
CN102473731B (zh)	2009-07-10	2015-06-17	株式会社半导体能源研究所	制造半导体器件的方法
WO2011007682A1 (en)	2009-07-17	2011-01-20	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing semiconductor device
WO2011007677A1 (en) *	2009-07-17	2011-01-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
WO2011010545A1 (en)	2009-07-18	2011-01-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
CN102576732B (zh) *	2009-07-18	2015-02-25	株式会社半导体能源研究所	半导体装置与用于制造半导体装置的方法
KR101929726B1 (ko) *	2009-07-18	2018-12-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제조 방법
WO2011010546A1 (en)	2009-07-24	2011-01-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102153841B1 (ko)	2009-07-31	2020-09-08	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
WO2011013523A1 (en)	2009-07-31	2011-02-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) *	2009-07-31	2011-02-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
KR101913995B1 (ko)	2009-07-31	2018-10-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
WO2011013522A1 (en) *	2009-07-31	2011-02-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
EP2284891B1 (en)	2009-08-07	2019-07-24	Semiconductor Energy Laboratory Co, Ltd.	Semiconductor device and manufacturing method thereof
TWI582951B (zh) *	2009-08-07	2017-05-11	半導體能源研究所股份有限公司	半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
JP5642447B2 (ja) *	2009-08-07	2014-12-17	株式会社半導体エネルギー研究所	半導体装置
TWI869133B (zh) *	2009-08-07	2025-01-01	日商半導體能源研究所股份有限公司	半導體裝置
TWI596741B (zh) *	2009-08-07	2017-08-21	半導體能源研究所股份有限公司	半導體裝置和其製造方法
JP5663231B2 (ja) *	2009-08-07	2015-02-04	株式会社半導体エネルギー研究所	発光装置
US8115883B2 (en)	2009-08-27	2012-02-14	Semiconductor Energy Laboratory Co., Ltd.	Display device and method for manufacturing the same
WO2011027649A1 (en)	2009-09-02	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including a transistor, and manufacturing method of semiconductor device
KR101746198B1 (ko)	2009-09-04	2017-06-12	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시장치 및 전자기기
WO2011027702A1 (en)	2009-09-04	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting device and method for manufacturing the same
KR101836532B1 (ko)	2009-09-04	2018-04-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
WO2011027676A1 (en) *	2009-09-04	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
WO2011027664A1 (en) *	2009-09-04	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device and method for manufacturing the same
CN102484135B (zh) *	2009-09-04	2016-01-20	株式会社东芝	薄膜晶体管及其制造方法
US9805641B2 (en) *	2009-09-04	2017-10-31	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device including the same
WO2011027656A1 (en)	2009-09-04	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Transistor and display device
TWI718565B (zh)	2009-09-10	2021-02-11	日商半導體能源研究所股份有限公司	半導體裝置和顯示裝置
KR20170116246A (ko)	2009-09-16	2017-10-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
KR20220031135A (ko)	2009-09-16	2022-03-11	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
US9715845B2 (en) *	2009-09-16	2017-07-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor display device
CN105679834A (zh)	2009-09-16	2016-06-15	株式会社半导体能源研究所	晶体管及显示设备
WO2011034012A1 (en) *	2009-09-16	2011-03-24	Semiconductor Energy Laboratory Co., Ltd.	Logic circuit, light emitting device, semiconductor device, and electronic device
KR101882887B1 (ko)	2009-09-16	2018-07-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	발광 장치 및 이의 제조 방법
WO2011033911A1 (en) *	2009-09-16	2011-03-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
CN102024410B (zh) *	2009-09-16	2014-10-22	株式会社半导体能源研究所	半导体装置及电子设备
KR101026213B1 (ko) *	2009-09-21	2011-03-31	경원대학교 산학협력단	레이저 패터닝을 이용한 투명 박막 트랜지스터의 제조
WO2011036981A1 (en) *	2009-09-24	2011-03-31	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102337631B1 (ko) *	2009-09-24	2021-12-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
EP2481089A4 (en)	2009-09-24	2015-09-23	Semiconductor Energy Lab	SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
WO2011036987A1 (en)	2009-09-24	2011-03-31	Semiconductor Energy Laboratory Co., Ltd.	Display device
CN105513644B (zh)	2009-09-24	2019-10-15	株式会社半导体能源研究所	驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器
WO2011037008A1 (en)	2009-09-24	2011-03-31	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
WO2011043163A1 (en)	2009-10-05	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
WO2011043182A1 (en)	2009-10-05	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Method for removing electricity and method for manufacturing semiconductor device
WO2011043203A1 (en)	2009-10-08	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display device, and electronic appliance
WO2011043176A1 (en) *	2009-10-08	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Oxide semiconductor layer and semiconductor device
KR102142835B1 (ko) *	2009-10-09	2020-08-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2011043164A1 (en) *	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the semiconductor device
WO2011043216A1 (en)	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting display device and electronic device including the same
WO2011043195A1 (en) *	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2011043194A1 (en) *	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
CN102576737B (zh)	2009-10-09	2015-10-21	株式会社半导体能源研究所	半导体器件及其制造方法
KR101721285B1 (ko)	2009-10-09	2017-03-29	가부시키가이샤 한도오따이 에네루기 켄큐쇼	시프트 레지스터 및 표시 장치
CN107195328B (zh)	2009-10-09	2020-11-10	株式会社半导体能源研究所	移位寄存器和显示装置以及其驱动方法
WO2011043206A1 (en)	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2011043162A1 (en)	2009-10-09	2011-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the semiconductor device
KR101771268B1 (ko)	2009-10-09	2017-08-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제조 방법
KR101711236B1 (ko)	2009-10-09	2017-02-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101832698B1 (ko)	2009-10-14	2018-02-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
KR102462043B1 (ko) *	2009-10-16	2022-11-03	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR102290831B1 (ko)	2009-10-16	2021-08-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치 및 이를 구비한 전자 장치
KR101865546B1 (ko)	2009-10-16	2018-06-11	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
WO2011046025A1 (en)	2009-10-16	2011-04-21	Semiconductor Energy Laboratory Co., Ltd.	Logic circuit and semiconductor device
JP5426315B2 (ja) *	2009-10-20	2014-02-26	スタンレー電気株式会社	ＺｎＯ系化合物半導体素子
US8546797B2 (en)	2009-10-20	2013-10-01	Stanley Electric Co., Ltd.	Zinc oxide based compound semiconductor device
WO2011048923A1 (en) *	2009-10-21	2011-04-28	Semiconductor Energy Laboratory Co., Ltd.	E-book reader
KR20170143023A (ko)	2009-10-21	2017-12-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 제작방법
KR101291488B1 (ko)	2009-10-21	2013-07-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101490726B1 (ko)	2009-10-21	2015-02-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR20220038542A (ko) *	2009-10-21	2022-03-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	아날로그 회로 및 반도체 장치
KR101875794B1 (ko)	2009-10-21	2018-08-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 표시 장치를 갖는 전자 기기
KR101591613B1 (ko) *	2009-10-21	2016-02-03	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101829074B1 (ko)	2009-10-29	2018-02-13	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101939712B1 (ko) *	2009-10-29	2019-01-17	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
CN102640279B (zh)	2009-10-30	2015-06-17	株式会社半导体能源研究所	半导体器件
KR101629194B1 (ko) *	2009-10-30	2016-06-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	논리 회로 및 반도체 장치
WO2011052382A1 (en)	2009-10-30	2011-05-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR20120099657A (ko) *	2009-10-30	2012-09-11	가부시키가이샤 한도오따이 에네루기 켄큐쇼	트랜지스터
KR20120102653A (ko)	2009-10-30	2012-09-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작방법
KR102481935B1 (ko)	2009-11-06	2022-12-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
KR101753927B1 (ko) *	2009-11-06	2017-07-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
JP5539846B2 (ja)	2009-11-06	2014-07-02	株式会社半導体エネルギー研究所	評価方法、半導体装置の作製方法
WO2011055769A1 (en)	2009-11-06	2011-05-12	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
WO2011055668A1 (en)	2009-11-06	2011-05-12	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR101876470B1 (ko) *	2009-11-06	2018-07-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101747158B1 (ko)	2009-11-06	2017-06-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치를 제작하기 위한 방법
KR102220606B1 (ko)	2009-11-06	2021-03-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
WO2011055474A1 (ja)	2009-11-09	2011-05-12	シャープ株式会社	アクティブマトリクス基板及びそれを備えた液晶表示パネル、並びにアクティブマトリクス基板の製造方法
KR20120106950A (ko) *	2009-11-13	2012-09-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
KR101787353B1 (ko) *	2009-11-13	2017-10-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101893332B1 (ko) *	2009-11-13	2018-08-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 구동 방법
KR101751560B1 (ko)	2009-11-13	2017-06-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2011058882A1 (en)	2009-11-13	2011-05-19	Semiconductor Energy Laboratory Co., Ltd.	Sputtering target and manufacturing method thereof, and transistor
KR20230173233A (ko) *	2009-11-13	2023-12-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 이 표시 장치를 구비한 전자 기기
KR101975741B1 (ko)	2009-11-13	2019-05-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	타깃 재료의 포장 방법 및 타깃의 장착 방법
WO2011062041A1 (en) *	2009-11-20	2011-05-26	Semiconductor Energy Laboratory Co., Ltd.	Transistor
WO2011062057A1 (en) *	2009-11-20	2011-05-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR20120107079A (ko)	2009-11-20	2012-09-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	박막 트랜지스터
WO2011062043A1 (en)	2009-11-20	2011-05-26	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
KR101829176B1 (ko) *	2009-11-20	2018-02-13	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US8355109B2 (en) *	2009-11-24	2013-01-15	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device comprising a liquid crystal material exhibiting a blue phase and a structure body projecting into the liquid crystal layer
KR101658533B1 (ko) *	2009-11-25	2016-09-22	엘지디스플레이 주식회사	산화물 박막 트랜지스터 및 그 제조방법
KR101506304B1 (ko)	2009-11-27	2015-03-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작방법
WO2011065198A1 (en)	2009-11-27	2011-06-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102667809B1 (ko) *	2009-11-28	2024-05-22	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
WO2011065210A1 (en)	2009-11-28	2011-06-03	Semiconductor Energy Laboratory Co., Ltd.	Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN102668028B (zh)	2009-11-28	2015-09-02	株式会社半导体能源研究所	层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
WO2011065230A1 (en)	2009-11-30	2011-06-03	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device, method for driving the same, and electronic device including the same
KR101605723B1 (ko) *	2009-12-01	2016-03-24	엘지디스플레이 주식회사	산화물 박막 트랜지스터의 제조방법
KR101623961B1 (ko) *	2009-12-02	2016-05-26	삼성전자주식회사	트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
KR101943109B1 (ko)	2009-12-04	2019-01-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
KR102696119B1 (ko)	2009-12-04	2024-08-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101501420B1 (ko) *	2009-12-04	2015-03-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
KR101291485B1 (ko)	2009-12-04	2013-07-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치의 제작 방법
JP2011139052A (ja)	2009-12-04	2011-07-14	Semiconductor Energy Lab Co Ltd	半導体記憶装置
KR101523358B1 (ko)	2009-12-04	2015-05-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
KR101470303B1 (ko) *	2009-12-08	2014-12-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR20120106786A (ko)	2009-12-08	2012-09-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
BR112012013851A2 (pt) *	2009-12-09	2019-09-24	Sharp Kabushiki Kaisha	dispositivo semicondutor e método para produzir o mesmo
WO2011070929A1 (en) *	2009-12-11	2011-06-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device
JP5727204B2 (ja)	2009-12-11	2015-06-03	株式会社半導体エネルギー研究所	半導体装置の作製方法
KR101770976B1 (ko)	2009-12-11	2017-08-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101777643B1 (ko) *	2009-12-11	2017-09-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 논리 회로, 및 cpu
WO2011070887A1 (en)	2009-12-11	2011-06-16	Semiconductor Energy Laboratory Co., Ltd.	Field effect transistor
JP5185357B2 (ja) *	2009-12-17	2013-04-17	株式会社半導体エネルギー研究所	半導体装置
WO2011074407A1 (en) *	2009-12-18	2011-06-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR101282383B1 (ko)	2009-12-18	2013-07-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치 및 전자 기기
WO2011074379A1 (en) *	2009-12-18	2011-06-23	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device and driving method thereof
KR101813460B1 (ko) *	2009-12-18	2017-12-29	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2011074409A1 (en)	2009-12-18	2011-06-23	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
WO2011074408A1 (en) *	2009-12-18	2011-06-23	Semiconductor Energy Laboratory Co., Ltd.	Non-volatile latch circuit and logic circuit, and semiconductor device using the same
WO2011074506A1 (en)	2009-12-18	2011-06-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR101622733B1 (ko) *	2009-12-21	2016-05-20	엘지디스플레이 주식회사	산화물 박막 트랜지스터의 제조방법
KR101994632B1 (ko) *	2009-12-25	2019-07-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2011077978A1 (en)	2009-12-25	2011-06-30	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing display device
KR20200013808A (ko) *	2009-12-25	2020-02-07	가부시키가이샤 한도오따이 에네루기 켄큐쇼	메모리 장치, 반도체 장치, 및 전자 장치
WO2011081041A1 (en)	2009-12-28	2011-07-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the semiconductor device
IN2012DN05057A (2) *	2009-12-28	2015-10-09	Semiconductor Energy Lab
KR101921619B1 (ko)	2009-12-28	2018-11-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치의 제작 방법
WO2011081008A1 (en)	2009-12-28	2011-07-07	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device and electronic device
KR101872678B1 (ko)	2009-12-28	2018-07-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치 및 전자 기기
WO2011089832A1 (en) *	2010-01-20	2011-07-28	Semiconductor Energy Laboratory Co., Ltd.	Method for driving display device and liquid crystal display device
CN102713735B (zh) *	2010-01-20	2015-07-01	株式会社半导体能源研究所	显示设备及其驱动方法
MY187143A (en)	2010-01-20	2021-09-03	Semiconductor Energy Lab	Semiconductor device
KR101787734B1 (ko)	2010-01-20	2017-10-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 기억 장치
KR101842860B1 (ko)	2010-01-20	2018-03-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치의 구동 방법
WO2011090087A1 (en)	2010-01-20	2011-07-28	Semiconductor Energy Laboratory Co., Ltd.	Display method of display device
KR101861991B1 (ko) *	2010-01-20	2018-05-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	신호 처리 회로 및 신호 처리 회로를 구동하기 위한 방법
KR101747421B1 (ko)	2010-01-20	2017-06-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치의 구동 방법
KR102253973B1 (ko)	2010-01-20	2021-05-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
CN102714221A (zh) *	2010-01-21	2012-10-03	夏普株式会社	电路基板、显示装置和电路基板的制造方法
KR101844085B1 (ko) *	2010-01-22	2018-03-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
CN102714026B (zh)	2010-01-24	2016-09-14	株式会社半导体能源研究所	显示装置
WO2011089844A1 (en)	2010-01-24	2011-07-28	Semiconductor Energy Laboratory Co., Ltd.	Display device and manufacturing method thereof
KR101893904B1 (ko) *	2010-01-29	2018-08-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 기억 장치
KR102026603B1 (ko)	2010-02-05	2019-10-01	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR20200124772A (ko) *	2010-02-05	2020-11-03	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제조 방법
KR101791713B1 (ko)	2010-02-05	2017-10-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	전계 효과 트랜지스터 및 반도체 장치
KR20260030834A (ko)	2010-02-05	2026-03-06	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 및 반도체 장치의 제조 방법
WO2011096276A1 (en) *	2010-02-05	2011-08-11	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device
US9391209B2 (en)	2010-02-05	2016-07-12	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8947337B2 (en)	2010-02-11	2015-02-03	Semiconductor Energy Laboratory Co., Ltd.	Display device
KR101636998B1 (ko) *	2010-02-12	2016-07-08	삼성디스플레이 주식회사	박막 트랜지스터 및 그 제조 방법
CN102763156B (zh)	2010-02-12	2015-11-25	株式会社半导体能源研究所	液晶显示装置和电子装置
US8617920B2 (en)	2010-02-12	2013-12-31	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
WO2011102227A1 (en)	2010-02-18	2011-08-25	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
JP5740169B2 (ja)	2010-02-19	2015-06-24	株式会社半導体エネルギー研究所	トランジスタの作製方法
CN102763214B (zh)	2010-02-19	2015-02-18	株式会社半导体能源研究所	半导体器件
WO2011102233A1 (en) *	2010-02-19	2011-08-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR101848684B1 (ko) *	2010-02-19	2018-04-16	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치 및 전자 장치
KR20120121931A (ko)	2010-02-19	2012-11-06	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
KR20180110212A (ko) *	2010-02-19	2018-10-08	가부시키가이샤 한도오따이 에네루기 켄큐쇼	트랜지스터 및 이를 이용한 표시 장치
KR102455879B1 (ko) *	2010-02-23	2022-10-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
KR102480055B1 (ko)	2010-02-26	2022-12-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치
CN102770903B (zh) *	2010-02-26	2015-10-07	株式会社半导体能源研究所	显示装置及具备该显示装置的电子书阅读器
KR102598388B1 (ko)	2010-02-26	2023-11-03	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치
WO2011105198A1 (en) *	2010-02-26	2011-09-01	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9000438B2 (en)	2010-02-26	2015-04-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP5413845B2 (ja) *	2010-02-26	2014-02-12	住友化学株式会社	液晶表示装置、液晶表示装置の製造方法及び液晶表示装置の製造装置
KR20180001562A (ko) *	2010-02-26	2018-01-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치를 제작하기 위한 방법
KR101389120B1 (ko)	2010-03-02	2014-04-25	가부시키가이샤 한도오따이 에네루기 켄큐쇼	펄스 신호 출력 회로 및 시프트 레지스터
DE112011106202B4 (de)	2010-03-02	2023-10-05	Semiconductor Energy Laboratory Co., Ltd.	Impulssignal-Ausgangsschaltung und Schieberegister
JP2011203726A (ja) *	2010-03-05	2011-10-13	Semiconductor Energy Lab Co Ltd	表示装置
WO2011108346A1 (en)	2010-03-05	2011-09-09	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of oxide semiconductor film and manufacturing method of transistor
KR102341927B1 (ko) *	2010-03-05	2021-12-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
KR101798260B1 (ko) *	2010-03-12	2017-11-15	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
CN105789321B (zh) *	2010-03-26	2019-08-20	株式会社半导体能源研究所	半导体装置的制造方法
CN102822979B (zh)	2010-03-26	2015-08-26	株式会社半导体能源研究所	半导体器件
CN102844873B (zh) *	2010-03-31	2015-06-17	株式会社半导体能源研究所	半导体显示装置
WO2011122299A1 (en)	2010-03-31	2011-10-06	Semiconductor Energy Laboratory Co., Ltd.	Driving method of liquid crystal display device
DE112011101152T5 (de) *	2010-03-31	2013-01-10	Semiconductor Energy Laboratory Co.,Ltd.	Flüssigkristallanzeigeeinrichtung und Verfahren zu deren Ansteuerung
KR102436902B1 (ko) *	2010-04-02	2022-08-25	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR101850926B1 (ko)	2010-04-09	2018-04-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US8653514B2 (en)	2010-04-09	2014-02-18	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR101881729B1 (ko)	2010-04-16	2018-07-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	성막 방법 및 반도체 장치를 제작하기 위한 방법
KR101887336B1 (ko) *	2010-04-23	2018-08-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 그 구동 방법
CN102859703B (zh)	2010-04-23	2015-12-02	株式会社半导体能源研究所	半导体装置的制造方法
JP5581263B2 (ja) *	2010-05-13	2014-08-27	株式会社半導体エネルギー研究所	バッファ回路
US8664658B2 (en)	2010-05-14	2014-03-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2012021196A2 (en)	2010-05-21	2012-02-16	Arizona Board Of Regents, For And On Behalf Of Arizona State University	Method for manufacturing electronic devices and electronic devices thereof
WO2012021197A2 (en)	2010-05-21	2012-02-16	Arizona Board Of Regents, For And On Behalf Of Arizona State University	Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
US8629438B2 (en)	2010-05-21	2014-01-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US9123820B2 (en)	2010-05-31	2015-09-01	Sharp Kabushiki Kaisha	Thin film transistor including semiconductor oxide layer having reduced resistance regions
WO2011151970A1 (ja)	2010-06-02	2011-12-08	シャープ株式会社	薄膜トランジスタ、コンタクト構造、基板、表示装置及びこれらの製造方法
WO2011155295A1 (en)	2010-06-10	2011-12-15	Semiconductor Energy Laboratory Co., Ltd.	Dc/dc converter, power supply circuit, and semiconductor device
WO2011158703A1 (en)	2010-06-18	2011-12-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8552425B2 (en)	2010-06-18	2013-10-08	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2012002104A1 (en)	2010-06-30	2012-01-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8441010B2 (en)	2010-07-01	2013-05-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR101801960B1 (ko)	2010-07-01	2017-11-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치의 구동 방법
US8642380B2 (en)	2010-07-02	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
WO2012002186A1 (en)	2010-07-02	2012-01-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9336739B2 (en) *	2010-07-02	2016-05-10	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device
US8785241B2 (en) *	2010-07-16	2014-07-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
KR101920709B1 (ko) *	2010-07-30	2018-11-22	삼성전자주식회사	트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
TWI688047B (zh) *	2010-08-06	2020-03-11	半導體能源研究所股份有限公司	半導體裝置
US8422272B2 (en) *	2010-08-06	2013-04-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and driving method thereof
WO2012017843A1 (en)	2010-08-06	2012-02-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor integrated circuit
JP5671418B2 (ja) *	2010-08-06	2015-02-18	株式会社半導体エネルギー研究所	半導体装置の駆動方法
TWI621184B (zh)	2010-08-16	2018-04-11	半導體能源研究所股份有限公司	半導體裝置之製造方法
US8883555B2 (en)	2010-08-25	2014-11-11	Semiconductor Energy Laboratory Co., Ltd.	Electronic device, manufacturing method of electronic device, and sputtering target
US8685787B2 (en)	2010-08-25	2014-04-01	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
JP2013009285A (ja) *	2010-08-26	2013-01-10	Semiconductor Energy Lab Co Ltd	信号処理回路及びその駆動方法
JP5727892B2 (ja) *	2010-08-26	2015-06-03	株式会社半導体エネルギー研究所	半導体装置
JP5864163B2 (ja)	2010-08-27	2016-02-17	株式会社半導体エネルギー研究所	半導体装置の設計方法
US8575610B2 (en)	2010-09-02	2013-11-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for driving the same
WO2012029596A1 (en) *	2010-09-03	2012-03-08	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
WO2012029612A1 (en)	2010-09-03	2012-03-08	Semiconductor Energy Laboratory Co., Ltd.	Sputtering target and method for manufacturing semiconductor device
WO2012029595A1 (en) *	2010-09-03	2012-03-08	Semiconductor Energy Laboratory Co., Ltd.	Oscillator circuit and semiconductor device using the oscillator circuit
US8797487B2 (en)	2010-09-10	2014-08-05	Semiconductor Energy Laboratory Co., Ltd.	Transistor, liquid crystal display device, and manufacturing method thereof
US8766253B2 (en)	2010-09-10	2014-07-01	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR20120026970A (ko)	2010-09-10	2012-03-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 발광 장치
US8922236B2 (en) *	2010-09-10	2014-12-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor memory device and method for inspecting the same
US8592879B2 (en)	2010-09-13	2013-11-26	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US8871565B2 (en)	2010-09-13	2014-10-28	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US9546416B2 (en)	2010-09-13	2017-01-17	Semiconductor Energy Laboratory Co., Ltd.	Method of forming crystalline oxide semiconductor film
KR101932576B1 (ko)	2010-09-13	2018-12-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
US8835917B2 (en)	2010-09-13	2014-09-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, power diode, and rectifier
US8664097B2 (en) *	2010-09-13	2014-03-04	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
JP2012256821A (ja)	2010-09-13	2012-12-27	Semiconductor Energy Lab Co Ltd	記憶装置
TWI539453B (zh)	2010-09-14	2016-06-21	半導體能源研究所股份有限公司	記憶體裝置和半導體裝置
KR101426515B1 (ko)	2010-09-15	2014-08-05	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 표시 장치
KR101949538B1 (ko) *	2010-09-22	2019-02-18	도판 인사츠 가부시키가이샤	박막 트랜지스터 및 그 제조 방법, 및 화상 표시 장치
TWI574259B (zh)	2010-09-29	2017-03-11	半導體能源研究所股份有限公司	半導體記憶體裝置和其驅動方法
TWI620176B (zh)	2010-10-05	2018-04-01	半導體能源研究所股份有限公司	半導體記憶體裝置及其驅動方法
US8803143B2 (en) *	2010-10-20	2014-08-12	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor including buffer layers with high resistivity
JP5775712B2 (ja) *	2010-10-28	2015-09-09	株式会社ジャパンディスプレイ	表示装置
US8916866B2 (en)	2010-11-03	2014-12-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TWI555205B (zh)	2010-11-05	2016-10-21	半導體能源研究所股份有限公司	半導體裝置及半導體裝置的製造方法
US8569754B2 (en)	2010-11-05	2013-10-29	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8936965B2 (en)	2010-11-26	2015-01-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
TWI562379B (en)	2010-11-30	2016-12-11	Semiconductor Energy Lab Co Ltd	Semiconductor device and method for manufacturing semiconductor device
US8816425B2 (en)	2010-11-30	2014-08-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8629496B2 (en)	2010-11-30	2014-01-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8823092B2 (en)	2010-11-30	2014-09-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
KR102505248B1 (ko)	2010-12-03	2023-03-03	가부시키가이샤 한도오따이 에네루기 켄큐쇼	산화물 반도체막 및 반도체 장치
US8894825B2 (en)	2010-12-17	2014-11-25	Semiconductor Energy Laboratory Co., Ltd.	Sputtering target, method for manufacturing the same, manufacturing semiconductor device
CN106960866B (zh)	2010-12-17	2021-03-12	株式会社半导体能源研究所	氧化物材料及半导体器件
US9911858B2 (en)	2010-12-28	2018-03-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9443984B2 (en)	2010-12-28	2016-09-13	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP5784479B2 (ja)	2010-12-28	2015-09-24	株式会社半導体エネルギー研究所	半導体装置
JP5975635B2 (ja) *	2010-12-28	2016-08-23	株式会社半導体エネルギー研究所	半導体装置
WO2012090973A1 (en)	2010-12-28	2012-07-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
WO2012090799A1 (en)	2010-12-28	2012-07-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR101761804B1 (ko) *	2011-11-22	2017-08-10	주성엔지니어링(주)	박막 트랜지스터 및 그 제조 방법
KR101812702B1 (ko) *	2010-12-30	2018-01-30	주성엔지니어링(주)	박막 트랜지스터 및 그 제조 방법
TWI525614B (zh)	2011-01-05	2016-03-11	半導體能源研究所股份有限公司	儲存元件、儲存裝置、及信號處理電路
JP5977523B2 (ja)	2011-01-12	2016-08-24	株式会社半導体エネルギー研究所	トランジスタの作製方法
US8536571B2 (en)	2011-01-12	2013-09-17	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
TWI535032B (zh)	2011-01-12	2016-05-21	半導體能源研究所股份有限公司	半導體裝置的製造方法
TWI570809B (zh)	2011-01-12	2017-02-11	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8912080B2 (en)	2011-01-12	2014-12-16	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of the semiconductor device
US20120178224A1 (en)	2011-01-12	2012-07-12	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
TWI572009B (zh)	2011-01-14	2017-02-21	半導體能源研究所股份有限公司	半導體記憶裝置
JP5527225B2 (ja) *	2011-01-14	2014-06-18	ソニー株式会社	薄膜トランジスタおよび表示装置
JP5859839B2 (ja)	2011-01-14	2016-02-16	株式会社半導体エネルギー研究所	記憶素子の駆動方法、及び、記憶素子
KR102026718B1 (ko)	2011-01-14	2019-09-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	기억장치, 반도체 장치, 검출 방법
JP5716407B2 (ja) *	2011-01-17	2015-05-13	株式会社リコー	電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US8916867B2 (en)	2011-01-20	2014-12-23	Semiconductor Energy Laboratory Co., Ltd.	Oxide semiconductor element and semiconductor device
TWI570920B (zh)	2011-01-26	2017-02-11	半導體能源研究所股份有限公司	半導體裝置及其製造方法
TWI539597B (zh)	2011-01-26	2016-06-21	半導體能源研究所股份有限公司	半導體裝置及其製造方法
WO2012102181A1 (en)	2011-01-27	2012-08-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TWI525619B (zh)	2011-01-27	2016-03-11	半導體能源研究所股份有限公司	記憶體電路
TWI520273B (zh)	2011-02-02	2016-02-01	半導體能源研究所股份有限公司	半導體儲存裝置
US9799773B2 (en)	2011-02-02	2017-10-24	Semiconductor Energy Laboratory Co., Ltd.	Transistor and semiconductor device
US8780614B2 (en)	2011-02-02	2014-07-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor memory device
US8669552B2 (en) *	2011-03-02	2014-03-11	Applied Materials, Inc.	Offset electrode TFT structure
US9023684B2 (en)	2011-03-04	2015-05-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US9646829B2 (en) *	2011-03-04	2017-05-09	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
JP5827145B2 (ja)	2011-03-08	2015-12-02	株式会社半導体エネルギー研究所	信号処理回路
US8541781B2 (en)	2011-03-10	2013-09-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP2012209543A (ja)	2011-03-11	2012-10-25	Semiconductor Energy Lab Co Ltd	半導体装置
TWI521612B (zh) *	2011-03-11	2016-02-11	半導體能源研究所股份有限公司	半導體裝置的製造方法
KR101900525B1 (ko) *	2011-03-18	2018-09-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
US9012904B2 (en)	2011-03-25	2015-04-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9219159B2 (en)	2011-03-25	2015-12-22	Semiconductor Energy Laboratory Co., Ltd.	Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI545652B (zh)	2011-03-25	2016-08-11	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8956944B2 (en)	2011-03-25	2015-02-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP6053098B2 (ja)	2011-03-28	2016-12-27	株式会社半導体エネルギー研究所	半導体装置
US8927329B2 (en)	2011-03-30	2015-01-06	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing oxide semiconductor device with improved electronic properties
TWI567735B (zh)	2011-03-31	2017-01-21	半導體能源研究所股份有限公司	記憶體電路，記憶體單元，及訊號處理電路
US9082860B2 (en)	2011-03-31	2015-07-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9960278B2 (en) *	2011-04-06	2018-05-01	Yuhei Sato	Manufacturing method of semiconductor device
EP2695195A4 (en) *	2011-04-07	2014-09-17	Univ Arizona	TWO ACTIVE LAYERS FOR SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREFOR
US9093538B2 (en)	2011-04-08	2015-07-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9012905B2 (en)	2011-04-08	2015-04-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US8878174B2 (en)	2011-04-15	2014-11-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8779488B2 (en) *	2011-04-15	2014-07-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor memory device
US9331206B2 (en)	2011-04-22	2016-05-03	Semiconductor Energy Laboratory Co., Ltd.	Oxide material and semiconductor device
JP5946683B2 (ja)	2011-04-22	2016-07-06	株式会社半導体エネルギー研究所	半導体装置
CN102760697B (zh) *	2011-04-27	2016-08-03	株式会社半导体能源研究所	半导体装置的制造方法
TWI792087B (zh)	2011-05-05	2023-02-11	日商半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8709922B2 (en) *	2011-05-06	2014-04-29	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9117701B2 (en)	2011-05-06	2015-08-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TWI541978B (zh) *	2011-05-11	2016-07-11	半導體能源研究所股份有限公司	半導體裝置及半導體裝置之驅動方法
US8946066B2 (en)	2011-05-11	2015-02-03	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing semiconductor device
SG11201503709SA (en)	2011-05-13	2015-07-30	Semiconductor Energy Lab	Semiconductor device
TWI562156B (en)	2011-05-13	2016-12-11	Semiconductor Energy Lab Co Ltd	Semiconductor device
WO2012157472A1 (en)	2011-05-13	2012-11-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9954110B2 (en)	2011-05-13	2018-04-24	Semiconductor Energy Laboratory Co., Ltd.	EL display device and electronic device
JP5886128B2 (ja)	2011-05-13	2016-03-16	株式会社半導体エネルギー研究所	半導体装置
KR101921772B1 (ko)	2011-05-13	2018-11-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
JP6076617B2 (ja) *	2011-05-13	2017-02-08	株式会社半導体エネルギー研究所	表示装置
WO2012157532A1 (en)	2011-05-16	2012-11-22	Semiconductor Energy Laboratory Co., Ltd.	Programmable logic device
US8581625B2 (en)	2011-05-19	2013-11-12	Semiconductor Energy Laboratory Co., Ltd.	Programmable logic device
KR102081792B1 (ko)	2011-05-19	2020-02-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	연산회로 및 연산회로의 구동방법
JP6006975B2 (ja) *	2011-05-19	2016-10-12	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP5892852B2 (ja)	2011-05-20	2016-03-23	株式会社半導体エネルギー研究所	プログラマブルロジックデバイス
JP5936908B2 (ja)	2011-05-20	2016-06-22	株式会社半導体エネルギー研究所	パリティビット出力回路およびパリティチェック回路
WO2012161059A1 (en) *	2011-05-20	2012-11-29	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for driving the same
JP5886496B2 (ja)	2011-05-20	2016-03-16	株式会社半導体エネルギー研究所	半導体装置
TWI616873B (zh)	2011-05-20	2018-03-01	半導體能源研究所股份有限公司	儲存裝置及信號處理電路
JP5731904B2 (ja)	2011-05-25	2015-06-10	ルネサスエレクトロニクス株式会社	半導体装置及び半導体装置の製造方法
US8610482B2 (en)	2011-05-27	2013-12-17	Semiconductor Energy Laboratory Co., Ltd.	Trimming circuit and method for driving trimming circuit
US8669781B2 (en)	2011-05-31	2014-03-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8679905B2 (en) *	2011-06-08	2014-03-25	Cbrite Inc.	Metal oxide TFT with improved source/drain contacts
JP6012263B2 (ja)	2011-06-09	2016-10-25	株式会社半導体エネルギー研究所	半導体記憶装置
KR101933741B1 (ko)	2011-06-09	2018-12-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	캐시 메모리 및 캐시 메모리의 구동 방법
JP6104522B2 (ja)	2011-06-10	2017-03-29	株式会社半導体エネルギー研究所	半導体装置
KR20120138074A (ko) *	2011-06-14	2012-12-24	삼성디스플레이 주식회사	박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
TWI575751B (zh)	2011-06-16	2017-03-21	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8901554B2 (en)	2011-06-17	2014-12-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including channel formation region including oxide semiconductor
KR20130007426A (ko)	2011-06-17	2013-01-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
US9166055B2 (en)	2011-06-17	2015-10-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
KR20190039345A (ko)	2011-06-17	2019-04-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그의 제조 방법
US9130044B2 (en)	2011-07-01	2015-09-08	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP2013021034A (ja) *	2011-07-07	2013-01-31	Ulvac Japan Ltd	レーザアニール法及び半導体装置の製造方法
KR102014876B1 (ko) *	2011-07-08	2019-08-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
US9385238B2 (en) *	2011-07-08	2016-07-05	Semiconductor Energy Laboratory Co., Ltd.	Transistor using oxide semiconductor
US9496138B2 (en) *	2011-07-08	2016-11-15	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
TWI565067B (zh)	2011-07-08	2017-01-01	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8847220B2 (en)	2011-07-15	2014-09-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8643008B2 (en) *	2011-07-22	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8718224B2 (en)	2011-08-05	2014-05-06	Semiconductor Energy Laboratory Co., Ltd.	Pulse signal output circuit and shift register
JP6231880B2 (ja) *	2011-08-11	2017-11-15	出光興産株式会社	薄膜トランジスタ
JP6006572B2 (ja)	2011-08-18	2016-10-12	株式会社半導体エネルギー研究所	半導体装置
JP6128775B2 (ja) *	2011-08-19	2017-05-17	株式会社半導体エネルギー研究所	半導体装置
US9082663B2 (en)	2011-09-16	2015-07-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
WO2013039126A1 (en)	2011-09-16	2013-03-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2013042562A1 (en)	2011-09-22	2013-03-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP2013084333A (ja)	2011-09-28	2013-05-09	Semiconductor Energy Lab Co Ltd	シフトレジスタ回路
SG11201505088UA (en)	2011-09-29	2015-08-28	Semiconductor Energy Lab	Semiconductor device
TWI605590B (zh)	2011-09-29	2017-11-11	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US8736315B2 (en)	2011-09-30	2014-05-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US20130087784A1 (en)	2011-10-05	2013-04-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US10014068B2 (en)	2011-10-07	2018-07-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP2013093561A (ja) *	2011-10-07	2013-05-16	Semiconductor Energy Lab Co Ltd	酸化物半導体膜及び半導体装置
JP6022880B2 (ja)	2011-10-07	2016-11-09	株式会社半導体エネルギー研究所	半導体装置及び半導体装置の作製方法
JP6026839B2 (ja)	2011-10-13	2016-11-16	株式会社半導体エネルギー研究所	半導体装置
US9018629B2 (en)	2011-10-13	2015-04-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing semiconductor device
US9117916B2 (en)	2011-10-13	2015-08-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising oxide semiconductor film
JP5912394B2 (ja)	2011-10-13	2016-04-27	株式会社半導体エネルギー研究所	半導体装置
KR101976212B1 (ko) *	2011-10-24	2019-05-07	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
JP6226518B2 (ja)	2011-10-24	2017-11-08	株式会社半導体エネルギー研究所	半導体装置
WO2013061895A1 (en)	2011-10-28	2013-05-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8604472B2 (en)	2011-11-09	2013-12-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP6076038B2 (ja)	2011-11-11	2017-02-08	株式会社半導体エネルギー研究所	表示装置の作製方法
JP2013104079A (ja) *	2011-11-11	2013-05-30	Solar Applied Materials Technology Corp	ターゲット、ＣｏベースのまたはＦｅベースの磁気記録媒体のための下層材料および磁気記録媒体
JP6122275B2 (ja)	2011-11-11	2017-04-26	株式会社半導体エネルギー研究所	表示装置
US8878177B2 (en)	2011-11-11	2014-11-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing semiconductor device
US8951899B2 (en)	2011-11-25	2015-02-10	Semiconductor Energy Laboratory	Method for manufacturing semiconductor device
JP6125211B2 (ja)	2011-11-25	2017-05-10	株式会社半導体エネルギー研究所	半導体装置の作製方法
US9057126B2 (en)	2011-11-29	2015-06-16	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing sputtering target and method for manufacturing semiconductor device
JP6147992B2 (ja)	2011-11-30	2017-06-14	株式会社半導体エネルギー研究所	半導体装置
TWI639150B (zh)	2011-11-30	2018-10-21	Semiconductor Energy Laboratory Co., Ltd.	半導體顯示裝置
US20130137232A1 (en)	2011-11-30	2013-05-30	Semiconductor Energy Laboratory Co., Ltd.	Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9076871B2 (en)	2011-11-30	2015-07-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP2013137853A (ja)	2011-12-02	2013-07-11	Semiconductor Energy Lab Co Ltd	記憶装置および記憶装置の駆動方法
JP2013149953A (ja) *	2011-12-20	2013-08-01	Semiconductor Energy Lab Co Ltd	半導体装置及び半導体装置の作製方法
US8785258B2 (en)	2011-12-20	2014-07-22	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
KR102100425B1 (ko)	2011-12-27	2020-04-13	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
TWI584383B (zh)	2011-12-27	2017-05-21	半導體能源研究所股份有限公司	半導體裝置及其製造方法
US9099560B2 (en)	2012-01-20	2015-08-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
KR102412138B1 (ko)	2012-01-25	2022-06-22	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 반도체 장치의 제작 방법
US8956912B2 (en)	2012-01-26	2015-02-17	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US9419146B2 (en)	2012-01-26	2016-08-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
TWI581431B (zh)	2012-01-26	2017-05-01	半導體能源研究所股份有限公司	半導體裝置及半導體裝置的製造方法
US9196741B2 (en)	2012-02-03	2015-11-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8916424B2 (en)	2012-02-07	2014-12-23	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US9859114B2 (en)	2012-02-08	2018-01-02	Semiconductor Energy Laboratory Co., Ltd.	Oxide semiconductor device with an oxygen-controlling insulating layer
US20130207111A1 (en)	2012-02-09	2013-08-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
US9112037B2 (en)	2012-02-09	2015-08-18	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP6108858B2 (ja)	2012-02-17	2017-04-05	株式会社半導体エネルギー研究所	ｐ型半導体材料および半導体装置
JP6220526B2 (ja)	2012-02-29	2017-10-25	株式会社半導体エネルギー研究所	半導体装置の作製方法
KR101963226B1 (ko) *	2012-02-29	2019-04-01	삼성전자주식회사	트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
JP6075922B2 (ja)	2012-02-29	2017-02-08	株式会社半導体エネルギー研究所	表示装置
JP2013183001A (ja)	2012-03-01	2013-09-12	Semiconductor Energy Lab Co Ltd	半導体装置
US9735280B2 (en)	2012-03-02	2017-08-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6041707B2 (ja)	2012-03-05	2016-12-14	株式会社半導体エネルギー研究所	ラッチ回路および半導体装置
JP6168795B2 (ja)	2012-03-14	2017-07-26	株式会社半導体エネルギー研究所	半導体装置の作製方法
US9058892B2 (en)	2012-03-14	2015-06-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and shift register
US9349849B2 (en)	2012-03-28	2016-05-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device including the semiconductor device
US8941113B2 (en)	2012-03-30	2015-01-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8901556B2 (en)	2012-04-06	2014-12-02	Semiconductor Energy Laboratory Co., Ltd.	Insulating film, method for manufacturing semiconductor device, and semiconductor device
SG10201610711UA (en)	2012-04-13	2017-02-27	Semiconductor Energy Lab Co Ltd	Semiconductor device
JP6128906B2 (ja)	2012-04-13	2017-05-17	株式会社半導体エネルギー研究所	半導体装置
JP6059566B2 (ja)	2012-04-13	2017-01-11	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP6143423B2 (ja)	2012-04-16	2017-06-07	株式会社半導体エネルギー研究所	半導体装置の製造方法
US9219164B2 (en)	2012-04-20	2015-12-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device with oxide semiconductor channel
CN202549848U (zh) *	2012-04-28	2012-11-21	京东方科技集团股份有限公司	显示装置、阵列基板和薄膜晶体管
US9048323B2 (en)	2012-04-30	2015-06-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102082793B1 (ko)	2012-05-10	2020-02-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 그 제작 방법
KR102222438B1 (ko)	2012-05-10	2021-03-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 표시 장치
DE112013002407B4 (de)	2012-05-10	2024-05-08	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung
US9001549B2 (en)	2012-05-11	2015-04-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102087443B1 (ko)	2012-05-11	2020-03-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 구동 방법
KR102071545B1 (ko)	2012-05-31	2020-01-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US8995607B2 (en)	2012-05-31	2015-03-31	Semiconductor Energy Laboratory Co., Ltd.	Pulse signal output circuit and shift register
US8901557B2 (en)	2012-06-15	2014-12-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9059219B2 (en)	2012-06-27	2015-06-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing semiconductor device
US8873308B2 (en)	2012-06-29	2014-10-28	Semiconductor Energy Laboratory Co., Ltd.	Signal processing circuit
KR102161077B1 (ko)	2012-06-29	2020-09-29	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
CN104395991B (zh)	2012-06-29	2017-06-20	株式会社半导体能源研究所	半导体装置
KR102315695B1 (ko)	2012-06-29	2021-10-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
CN104685633B (zh) *	2012-07-03	2018-08-03	Imec 非营利协会	制作薄膜晶体管的方法
KR102099262B1 (ko)	2012-07-11	2020-04-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) *	2012-07-13	2014-02-20	Semiconductor Energy Lab Co Ltd	液晶表示装置
JP6006558B2 (ja)	2012-07-17	2016-10-12	株式会社半導体エネルギー研究所	半導体装置及びその製造方法
CN104488016B (zh)	2012-07-20	2018-08-10	株式会社半导体能源研究所	显示装置及具有该显示装置的电子设备
DE112013007836B3 (de)	2012-07-20	2023-06-22	Semiconductor Energy Laboratory Co., Ltd.	Anzeigevorrichtung
JP2014042004A (ja)	2012-07-26	2014-03-06	Semiconductor Energy Lab Co Ltd	半導体装置及びその作製方法
JP6224931B2 (ja)	2012-07-27	2017-11-01	株式会社半導体エネルギー研究所	半導体装置
DE112013007566B3 (de)	2012-08-03	2018-02-22	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung
SG11201505225TA (en)	2012-08-03	2015-08-28	Semiconductor Energy Lab	Oxide semiconductor stacked film and semiconductor device
US9929276B2 (en)	2012-08-10	2018-03-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP2014057296A (ja)	2012-08-10	2014-03-27	Semiconductor Energy Lab Co Ltd	半導体装置の駆動方法
US8937307B2 (en)	2012-08-10	2015-01-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US9245958B2 (en)	2012-08-10	2016-01-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
WO2014024808A1 (en)	2012-08-10	2014-02-13	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
TWI581404B (zh)	2012-08-10	2017-05-01	半導體能源研究所股份有限公司	半導體裝置以及該半導體裝置的驅動方法
JP2014057298A (ja)	2012-08-10	2014-03-27	Semiconductor Energy Lab Co Ltd	半導体装置の駆動方法
JP2014199899A (ja)	2012-08-10	2014-10-23	株式会社半導体エネルギー研究所	半導体装置
KR102100290B1 (ko) *	2012-08-14	2020-05-27	삼성디스플레이 주식회사	박막 트랜지스터 및 그 제조 방법과 상기 박막 트랜지스터를 포함하는 표시 장치
KR20140026257A (ko)	2012-08-23	2014-03-05	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
KR102161078B1 (ko)	2012-08-28	2020-09-29	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 그 제작 방법
DE102013216824B4 (de)	2012-08-28	2024-10-17	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung
US9625764B2 (en)	2012-08-28	2017-04-18	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
KR20140029202A (ko)	2012-08-28	2014-03-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
TWI657539B (zh)	2012-08-31	2019-04-21	Semiconductor Energy Laboratory Co., Ltd.	半導體裝置
KR102400509B1 (ko)	2012-09-13	2022-05-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
US8981372B2 (en)	2012-09-13	2015-03-17	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic appliance
US9018624B2 (en)	2012-09-13	2015-04-28	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic appliance
KR102226090B1 (ko)	2012-10-12	2021-03-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
JP6021586B2 (ja)	2012-10-17	2016-11-09	株式会社半導体エネルギー研究所	半導体装置
JP5951442B2 (ja)	2012-10-17	2016-07-13	株式会社半導体エネルギー研究所	半導体装置
KR102227591B1 (ko)	2012-10-17	2021-03-15	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR102220279B1 (ko)	2012-10-19	2021-02-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
TWI691084B (zh)	2012-10-24	2020-04-11	日商半導體能源研究所股份有限公司	半導體裝置及其製造方法
JP6300489B2 (ja)	2012-10-24	2018-03-28	株式会社半導体エネルギー研究所	半導体装置の作製方法
KR102279459B1 (ko)	2012-10-24	2021-07-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
JP6219562B2 (ja) *	2012-10-30	2017-10-25	株式会社半導体エネルギー研究所	表示装置及び電子機器
TWI613813B (zh)	2012-11-16	2018-02-01	半導體能源研究所股份有限公司	半導體裝置
JP6285150B2 (ja) *	2012-11-16	2018-02-28	株式会社半導体エネルギー研究所	半導体装置
JP6317059B2 (ja)	2012-11-16	2018-04-25	株式会社半導体エネルギー研究所	半導体装置及び表示装置
WO2014084153A1 (en)	2012-11-28	2014-06-05	Semiconductor Energy Laboratory Co., Ltd.	Display device
US9412764B2 (en)	2012-11-28	2016-08-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display device, and electronic device
US9594281B2 (en)	2012-11-30	2017-03-14	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device
US9153649B2 (en)	2012-11-30	2015-10-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for evaluating semiconductor device
US9246011B2 (en)	2012-11-30	2016-01-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP6320009B2 (ja)	2012-12-03	2018-05-09	株式会社半導体エネルギー研究所	半導体装置及びその作製方法
KR102207028B1 (ko)	2012-12-03	2021-01-22	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
JP5995698B2 (ja) *	2012-12-06	2016-09-21	富士フイルム株式会社	薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ
US9905585B2 (en)	2012-12-25	2018-02-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising capacitor
KR20220145922A (ko)	2012-12-25	2022-10-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
KR102241249B1 (ko)	2012-12-25	2021-04-15	가부시키가이샤 한도오따이 에네루기 켄큐쇼	저항 소자, 표시 장치, 및 전자기기
KR101395906B1 (ko) *	2012-12-26	2014-05-19	중앙대학교 산학협력단	박막 트랜지스터 및 그 제조방법
TWI607510B (zh)	2012-12-28	2017-12-01	半導體能源研究所股份有限公司	半導體裝置及半導體裝置的製造方法
KR20250028503A (ko)	2012-12-28	2025-02-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 및 반도체 장치의 제작 방법
US9391096B2 (en)	2013-01-18	2016-07-12	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
TWI614813B (zh)	2013-01-21	2018-02-11	半導體能源研究所股份有限公司	半導體裝置的製造方法
US8981374B2 (en)	2013-01-30	2015-03-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP2014154714A (ja) *	2013-02-08	2014-08-25	Nippon Hoso Kyokai <Nhk>	有機電界発光素子、表示装置および有機電界発光素子の製造方法
TWI618252B (zh)	2013-02-12	2018-03-11	半導體能源研究所股份有限公司	半導體裝置
TWI611567B (zh)	2013-02-27	2018-01-11	半導體能源研究所股份有限公司	半導體裝置、驅動電路及顯示裝置
KR102153110B1 (ko)	2013-03-06	2020-09-07	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체막 및 반도체 장치
US9269315B2 (en)	2013-03-08	2016-02-23	Semiconductor Energy Laboratory Co., Ltd.	Driving method of semiconductor device
JP6355374B2 (ja)	2013-03-22	2018-07-11	株式会社半導体エネルギー研究所	半導体装置の作製方法
US10347769B2 (en)	2013-03-25	2019-07-09	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (ja)	2013-03-26	2018-08-22	株式会社半導体エネルギー研究所	半導体装置およびその作製方法
JP6395409B2 (ja)	2013-03-27	2018-09-26	株式会社半導体エネルギー研究所	半導体装置およびその作製方法
JP6211287B2 (ja) *	2013-04-04	2017-10-11	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP6224338B2 (ja)	2013-04-11	2017-11-01	株式会社半導体エネルギー研究所	半導体装置、表示装置及び半導体装置の作製方法
JP6198434B2 (ja)	2013-04-11	2017-09-20	株式会社半導体エネルギー研究所	表示装置及び電子機器
US10304859B2 (en)	2013-04-12	2019-05-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device having an oxide film on an oxide semiconductor film
US9915848B2 (en)	2013-04-19	2018-03-13	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
US9893192B2 (en)	2013-04-24	2018-02-13	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP6401483B2 (ja)	2013-04-26	2018-10-10	株式会社半導体エネルギー研究所	半導体装置の作製方法
TWI631711B (zh)	2013-05-01	2018-08-01	半導體能源研究所股份有限公司	半導體裝置
US9231002B2 (en)	2013-05-03	2016-01-05	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
US9704894B2 (en)	2013-05-10	2017-07-11	Semiconductor Energy Laboratory Co., Ltd.	Display device including pixel electrode including oxide
US9343579B2 (en)	2013-05-20	2016-05-17	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TWI664731B (zh)	2013-05-20	2019-07-01	半導體能源研究所股份有限公司	半導體裝置
KR102098795B1 (ko)	2013-05-20	2020-04-08	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US9647125B2 (en)	2013-05-20	2017-05-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
WO2014192210A1 (ja) *	2013-05-29	2014-12-04	パナソニック株式会社	薄膜トランジスタ装置とその製造方法、および表示装置
TWI624936B (zh)	2013-06-05	2018-05-21	半導體能源研究所股份有限公司	顯示裝置
US9806198B2 (en)	2013-06-05	2017-10-31	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
TWI649606B (zh)	2013-06-05	2019-02-01	日商半導體能源研究所股份有限公司	顯示裝置及電子裝置
US9773915B2 (en)	2013-06-11	2017-09-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP6018607B2 (ja)	2013-07-12	2016-11-02	株式会社半導体エネルギー研究所	半導体装置
KR101515543B1 (ko) *	2013-08-12	2015-05-11	동의대학교 산학협력단	박막 트랜지스터 및 그 제조 방법
JP2015036797A (ja)	2013-08-15	2015-02-23	ソニー株式会社	表示装置および電子機器
JP6329843B2 (ja)	2013-08-19	2018-05-23	株式会社半導体エネルギー研究所	半導体装置
KR102232133B1 (ko)	2013-08-22	2021-03-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US9443987B2 (en)	2013-08-23	2016-09-13	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TW202431651A (zh)	2013-10-10	2024-08-01	日商半導體能源研究所股份有限公司	液晶顯示裝置
JP2015179247A (ja) *	2013-10-22	2015-10-08	株式会社半導体エネルギー研究所	表示装置
US9276128B2 (en)	2013-10-22	2016-03-01	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, method for manufacturing the same, and etchant used for the same
KR102244460B1 (ko)	2013-10-22	2021-04-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
DE102014220672A1 (de)	2013-10-22	2015-05-07	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung
US9583516B2 (en)	2013-10-25	2017-02-28	Semiconductor Energy Laboratory Co., Ltd.	Display device
JP6440457B2 (ja)	2013-11-07	2018-12-19	株式会社半導体エネルギー研究所	半導体装置
JP2016001712A (ja)	2013-11-29	2016-01-07	株式会社半導体エネルギー研究所	半導体装置の作製方法
TW201523877A (zh)	2013-11-29	2015-06-16	半導體能源研究所股份有限公司	半導體裝置、半導體裝置的製造方法以及顯示裝置
US9882014B2 (en)	2013-11-29	2018-01-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US20150155313A1 (en)	2013-11-29	2015-06-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP6496132B2 (ja)	2013-12-02	2019-04-03	株式会社半導体エネルギー研究所	半導体装置
KR102705567B1 (ko)	2013-12-02	2024-09-12	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
US9991392B2 (en)	2013-12-03	2018-06-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP2016027597A (ja) *	2013-12-06	2016-02-18	株式会社半導体エネルギー研究所	半導体装置
US9349751B2 (en)	2013-12-12	2016-05-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
TWI642186B (zh)	2013-12-18	2018-11-21	日商半導體能源研究所股份有限公司	半導體裝置
JP6444714B2 (ja)	2013-12-20	2018-12-26	株式会社半導体エネルギー研究所	半導体装置の作製方法
US9379192B2 (en)	2013-12-20	2016-06-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2015097586A1 (en)	2013-12-25	2015-07-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
SG11201604650SA (en)	2013-12-26	2016-07-28	Semiconductor Energy Lab	Semiconductor device
JP6402017B2 (ja)	2013-12-26	2018-10-10	株式会社半導体エネルギー研究所	半導体装置
JPWO2015098225A1 (ja)	2013-12-26	2017-03-23	旭硝子株式会社	半導体装置および半導体装置の製造方法
KR102529174B1 (ko)	2013-12-27	2023-05-08	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2017034644A2 (en)	2015-06-09	2017-03-02	ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY	Method of providing an electronic device and electronic device thereof
US10381224B2 (en)	2014-01-23	2019-08-13	Arizona Board Of Regents On Behalf Of Arizona State University	Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en)	2014-01-23	2015-10-15	Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University	Method of providing a flexible semiconductor device and flexible semiconductor device thereof
KR102306200B1 (ko)	2014-01-24	2021-09-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
WO2015114476A1 (en)	2014-01-28	2015-08-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102325158B1 (ko)	2014-01-30	2021-11-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
US9929279B2 (en)	2014-02-05	2018-03-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
TWI675004B (zh)	2014-02-21	2019-10-21	日商半導體能源研究所股份有限公司	半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
US10325937B2 (en)	2014-02-24	2019-06-18	Lg Display Co., Ltd.	Thin film transistor substrate with intermediate insulating layer and display using the same
US10985196B2 (en)	2014-02-24	2021-04-20	Lg Display Co., Ltd.	Thin film transistor substrate with intermediate insulating layer and display using the same
US10096489B2 (en)	2014-03-06	2018-10-09	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
JP6607681B2 (ja)	2014-03-07	2019-11-20	株式会社半導体エネルギー研究所	半導体装置
US9443872B2 (en)	2014-03-07	2016-09-13	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
KR102528615B1 (ko)	2014-03-13	2023-05-08	가부시키가이샤 한도오따이 에네루기 켄큐쇼	촬상 장치
KR102252213B1 (ko)	2014-03-14	2021-05-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	회로 시스템
WO2015136427A1 (ja)	2014-03-14	2015-09-17	株式会社半導体エネルギー研究所	半導体装置
JP2015176965A (ja) *	2014-03-14	2015-10-05	株式会社日本製鋼所	酸化物系材料の製造方法
SG11201606536XA (en)	2014-03-18	2016-09-29	Semiconductor Energy Lab Co Ltd	Semiconductor device and manufacturing method thereof
WO2015145292A1 (en)	2014-03-28	2015-10-01	Semiconductor Energy Laboratory Co., Ltd.	Transistor and semiconductor device
JP6541398B2 (ja)	2014-04-11	2019-07-10	株式会社半導体エネルギー研究所	半導体装置
DE112015001878B4 (de)	2014-04-18	2021-09-09	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung und elektronisches Gerät
KR102380829B1 (ko)	2014-04-23	2022-03-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	촬상 장치
JP6486712B2 (ja)	2014-04-30	2019-03-20	株式会社半導体エネルギー研究所	酸化物半導体膜
US10043913B2 (en)	2014-04-30	2018-08-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor film, semiconductor device, display device, module, and electronic device
TWI686899B (zh)	2014-05-02	2020-03-01	日商半導體能源研究所股份有限公司	半導體裝置、觸控感測器、顯示裝置
JP6537341B2 (ja)	2014-05-07	2019-07-03	株式会社半導体エネルギー研究所	半導体装置
TWI695502B (zh)	2014-05-09	2020-06-01	日商半導體能源研究所股份有限公司	半導體裝置
EP3143641A4 (en)	2014-05-13	2018-01-17	Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University	Method of providing an electronic device and electronic device thereof
TWI672804B (zh)	2014-05-23	2019-09-21	Semiconductor Energy Laboratory Co., Ltd.	半導體裝置的製造方法
US9874775B2 (en)	2014-05-28	2018-01-23	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device and electronic device
DE112014006711B4 (de)	2014-05-30	2021-01-21	Semiconductor Energy Laboratory Co., Ltd.	Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung
SG10201912585TA (en)	2014-05-30	2020-02-27	Semiconductor Energy Lab	Semiconductor device and method for manufacturing the same
TWI646658B (zh)	2014-05-30	2019-01-01	日商半導體能源研究所股份有限公司	半導體裝置
US9881954B2 (en)	2014-06-11	2018-01-30	Semiconductor Energy Laboratory Co., Ltd.	Imaging device
KR102437450B1 (ko)	2014-06-13	2022-08-30	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 및 반도체 장치를 포함하는 전자 기기
KR20150146409A (ko)	2014-06-20	2015-12-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
US9722090B2 (en)	2014-06-23	2017-08-01	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including first gate oxide semiconductor film, and second gate
US9461179B2 (en)	2014-07-11	2016-10-04	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
US10147747B2 (en)	2014-08-21	2018-12-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, manufacturing method thereof, and electronic device
US10559667B2 (en)	2014-08-25	2020-02-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for measuring current of semiconductor device
US9766517B2 (en)	2014-09-05	2017-09-19	Semiconductor Energy Laboratory Co., Ltd.	Display device and display module
WO2016046685A1 (en)	2014-09-26	2016-03-31	Semiconductor Energy Laboratory Co., Ltd.	Imaging device
US9450581B2 (en)	2014-09-30	2016-09-20	Semiconductor Energy Laboratory Co., Ltd.	Logic circuit, semiconductor device, electronic component, and electronic device
JP6392061B2 (ja) *	2014-10-01	2018-09-19	東京エレクトロン株式会社	電子デバイス、その製造方法、及びその製造装置
JP6570417B2 (ja)	2014-10-24	2019-09-04	株式会社半導体エネルギー研究所	撮像装置および電子機器
KR102439023B1 (ko)	2014-10-28	2022-08-31	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치, 표시 장치의 제작 방법, 및 전자 기기
CN111477657B (zh)	2014-10-28	2024-03-05	株式会社半导体能源研究所	功能面板、功能面板的制造方法、模块、数据处理装置
JP2016092413A (ja)	2014-10-29	2016-05-23	株式会社半導体エネルギー研究所	撮像装置および電子機器
TWI711165B (zh)	2014-11-21	2020-11-21	日商半導體能源研究所股份有限公司	半導體裝置及電子裝置
KR102456654B1 (ko)	2014-11-26	2022-10-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
JP6647841B2 (ja)	2014-12-01	2020-02-14	株式会社半導体エネルギー研究所	酸化物の作製方法
US9773832B2 (en)	2014-12-10	2017-09-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device
JP5859632B2 (ja) *	2014-12-22	2016-02-10	株式会社半導体エネルギー研究所	表示装置
US9741742B2 (en)	2014-12-22	2017-08-22	Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University	Deformable electronic device and methods of providing and using deformable electronic device
US10446582B2 (en)	2014-12-22	2019-10-15	Arizona Board Of Regents On Behalf Of Arizona State University	Method of providing an imaging system and imaging system thereof
US10522693B2 (en)	2015-01-16	2019-12-31	Semiconductor Energy Laboratory Co., Ltd.	Memory device and electronic device
US9647132B2 (en)	2015-01-30	2017-05-09	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and memory device
TWI710124B (zh)	2015-01-30	2020-11-11	日商半導體能源研究所股份有限公司	成像裝置及電子裝置
CN112768511B (zh)	2015-02-06	2026-01-23	株式会社半导体能源研究所	半导体装置及其制造方法
TWI732383B (zh)	2015-02-06	2021-07-01	日商半導體能源研究所股份有限公司	裝置及其製造方法以及電子裝置
US9685560B2 (en)	2015-03-02	2017-06-20	Semiconductor Energy Laboratory Co., Ltd.	Transistor, method for manufacturing transistor, semiconductor device, and electronic device
JP6801969B2 (ja)	2015-03-03	2020-12-16	株式会社半導体エネルギー研究所	半導体装置、表示装置、および電子機器
JPWO2016139828A1 (ja) *	2015-03-03	2017-04-27	株式会社東芝	半導体装置
KR102560862B1 (ko)	2015-03-17	2023-07-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	터치 패널
JP6765199B2 (ja)	2015-03-17	2020-10-07	株式会社半導体エネルギー研究所	タッチパネル
JP6662665B2 (ja)	2015-03-19	2020-03-11	株式会社半導体エネルギー研究所	液晶表示装置及び該液晶表示装置を用いた電子機器
US9634048B2 (en)	2015-03-24	2017-04-25	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10429704B2 (en)	2015-03-26	2019-10-01	Semiconductor Energy Laboratory Co., Ltd.	Display device, display module including the display device, and electronic device including the display device or the display module
TWI880211B (zh)	2015-03-27	2025-04-11	日商半導體能源研究所股份有限公司	觸控面板
US9716852B2 (en)	2015-04-03	2017-07-25	Semiconductor Energy Laboratory Co., Ltd.	Broadcast system
US9685476B2 (en)	2015-04-03	2017-06-20	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10389961B2 (en)	2015-04-09	2019-08-20	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10372274B2 (en)	2015-04-13	2019-08-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and touch panel
US9848146B2 (en)	2015-04-23	2017-12-19	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
DE102016206922A1 (de)	2015-05-08	2016-11-10	Semiconductor Energy Laboratory Co., Ltd.	Touchscreen
US9912897B2 (en)	2015-05-11	2018-03-06	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10684500B2 (en)	2015-05-27	2020-06-16	Semiconductor Energy Laboratory Co., Ltd.	Touch panel
US10139663B2 (en)	2015-05-29	2018-11-27	Semiconductor Energy Laboratory Co., Ltd.	Input/output device and electronic device
KR102553553B1 (ko)	2015-06-12	2023-07-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	촬상 장치, 및 그 동작 방법 및 전자 기기
JP2017003976A (ja)	2015-06-15	2017-01-05	株式会社半導体エネルギー研究所	表示装置
WO2017006419A1 (ja)	2015-07-06	2017-01-12	堺ディスプレイプロダクト株式会社	表示装置
TWI713367B (zh)	2015-07-07	2020-12-11	日商半導體能源研究所股份有限公司	成像裝置及其運作方法
JP6791667B2 (ja)	2015-07-16	2020-11-25	株式会社半導体エネルギー研究所	撮像装置
US9876946B2 (en)	2015-08-03	2018-01-23	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10373991B2 (en)	2015-08-19	2019-08-06	Semiconductor Energy Laboratory Co., Ltd.	Imaging device, operating method thereof, and electronic device
US10090344B2 (en)	2015-09-07	2018-10-02	Semiconductor Energy Laboratory Co., Ltd.	Imaging device, method for operating the same, module, and electronic device
KR102698685B1 (ko)	2015-09-10	2024-08-23	가부시키가이샤 한도오따이 에네루기 켄큐쇼	촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
US10896923B2 (en)	2015-09-18	2021-01-19	Semiconductor Energy Laboratory Co., Ltd.	Method of operating an imaging device with global shutter system
JP2017063420A (ja)	2015-09-25	2017-03-30	株式会社半導体エネルギー研究所	半導体装置
CN108140657A (zh)	2015-09-30	2018-06-08	株式会社半导体能源研究所	半导体装置及电子设备
US10109667B2 (en)	2015-10-09	2018-10-23	Semiconductor Energy Laboratory Co., Ltd.	Imaging device, module, and electronic device
JP6864456B2 (ja)	2015-10-15	2021-04-28	株式会社半導体エネルギー研究所	半導体装置
JP6917700B2 (ja)	2015-12-02	2021-08-11	株式会社半導体エネルギー研究所	半導体装置
KR20180093000A (ko)	2015-12-11	2018-08-20	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 분리 방법
JP6907512B2 (ja) *	2015-12-15	2021-07-21	株式会社リコー	電界効果型トランジスタの製造方法
CN106887436B (zh) *	2015-12-16	2019-10-25	鸿富锦精密工业（深圳）有限公司	薄膜晶体管阵列基板及其制备方法
JP6802701B2 (ja)	2015-12-18	2020-12-16	株式会社半導体エネルギー研究所	表示装置、モジュール及び電子機器
KR102617041B1 (ko)	2015-12-28	2023-12-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	장치, 텔레비전 시스템, 및 전자 기기
US10020336B2 (en)	2015-12-28	2018-07-10	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device using three dimentional (3D) integration
US9576984B1 (en) *	2016-01-14	2017-02-21	Hon Hai Precision Industry Co., Ltd.	Thin film transistor array panel and conducting structure
US10027896B2 (en)	2016-01-15	2018-07-17	Semiconductor Energy Laboratory Co., Ltd.	Image display system, operation method of the same, and electronic device
JP6676990B2 (ja) *	2016-02-01	2020-04-08	株式会社リコー	電界効果型トランジスタの製造方法
US9947700B2 (en)	2016-02-03	2018-04-17	Semiconductor Energy Laboratory Co., Ltd.	Imaging device and electronic device
US10115741B2 (en)	2016-02-05	2018-10-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device
KR20170096956A (ko)	2016-02-17	2017-08-25	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 전자 기기
US10347681B2 (en)	2016-02-19	2019-07-09	Semiconductor Energy Laboratory Co., Ltd.	Imaging device
US10573621B2 (en)	2016-02-25	2020-02-25	Semiconductor Energy Laboratory Co., Ltd.	Imaging system and manufacturing apparatus
US10263114B2 (en)	2016-03-04	2019-04-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, method for manufacturing the same, or display device including the same
US9882064B2 (en)	2016-03-10	2018-01-30	Semiconductor Energy Laboratory Co., Ltd.	Transistor and electronic device
US10014325B2 (en)	2016-03-10	2018-07-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and electronic device
KR102917764B1 (ko)	2016-03-11	2026-01-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	입출력 패널, 입출력 장치
CN115808825A (zh)	2016-03-15	2023-03-17	株式会社半导体能源研究所	显示装置、模块及电子设备
US10333004B2 (en)	2016-03-18	2019-06-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, semiconductor wafer, module and electronic device
US10096720B2 (en)	2016-03-25	2018-10-09	Semiconductor Energy Laboratory Co., Ltd.	Transistor, semiconductor device, and electronic device
JP6863803B2 (ja)	2016-04-07	2021-04-21	株式会社半導体エネルギー研究所	表示装置
KR102320483B1 (ko)	2016-04-08	2021-11-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
US10032918B2 (en)	2016-04-22	2018-07-24	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP6968567B2 (ja)	2016-04-22	2021-11-17	株式会社半導体エネルギー研究所	半導体装置の作製方法
US10008502B2 (en)	2016-05-04	2018-06-26	Semiconductor Energy Laboratory Co., Ltd.	Memory device
JP2017203983A (ja) *	2016-05-06	2017-11-16	株式会社半導体エネルギー研究所	半導体装置、システム、及び動作方法
JP7109887B2 (ja)	2016-05-20	2022-08-01	株式会社半導体エネルギー研究所	表示システム
US10078243B2 (en)	2016-06-03	2018-09-18	Semiconductor Energy Laboratory Co., Ltd.	Display device
TWI712029B (zh)	2016-06-17	2020-12-01	日商半導體能源研究所股份有限公司	顯示裝置，及顯示裝置的驅動方法
KR102330605B1 (ko)	2016-06-22	2021-11-24	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
JP2016174186A (ja) *	2016-06-27	2016-09-29	株式会社半導体エネルギー研究所	半導体装置の作製方法
TWI737665B (zh)	2016-07-01	2021-09-01	日商半導體能源硏究所股份有限公司	半導體裝置以及半導體裝置的製造方法
TWI709952B (zh)	2016-07-01	2020-11-11	日商半導體能源研究所股份有限公司	電子裝置、電子裝置的驅動方法
TWI754542B (zh)	2016-07-11	2022-02-01	日商半導體能源研究所股份有限公司	濺射靶材及金屬氧化物
CN115799342A (zh)	2016-07-26	2023-03-14	株式会社半导体能源研究所	半导体装置
JP6962731B2 (ja)	2016-07-29	2021-11-05	株式会社半導体エネルギー研究所	半導体装置、表示システム及び電子機器
DE112017003898B4 (de)	2016-08-03	2024-07-18	Semiconductor Energy Laboratory Co., Ltd.	Abbildungsvorrichtungen und Bildsensor
US10678078B2 (en)	2016-08-05	2020-06-09	Semiconductor Energy Laboratory Co., Ltd.	Display device and method for manufacturing the display device
KR20180016271A (ko)	2016-08-05	2018-02-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
US10141544B2 (en)	2016-08-10	2018-11-27	Semiconductor Energy Laboratory Co., Ltd.	Electroluminescent display device and manufacturing method thereof
JP2018032018A (ja)	2016-08-17	2018-03-01	株式会社半導体エネルギー研究所	半導体装置、表示モジュール及び電子機器
KR102574674B1 (ko)	2016-08-17	2023-09-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치
TWI718330B (zh)	2016-08-24	2021-02-11	日商半導體能源硏究所股份有限公司	半導體裝置及其製造方法
WO2018042285A1 (en)	2016-08-30	2018-03-08	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display device, and electronic device
US9978879B2 (en)	2016-08-31	2018-05-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
WO2018051208A1 (en)	2016-09-14	2018-03-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method of the same
KR102372150B1 (ko)	2016-09-30	2022-03-07	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 시스템 및 전자 기기
KR20180037105A (ko)	2016-10-03	2018-04-11	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치, 표시 모듈, 및 표시 장치의 제작 방법
US10411003B2 (en)	2016-10-14	2019-09-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
CN109791950A (zh)	2016-10-21	2019-05-21	株式会社半导体能源研究所	半导体装置
KR20180048327A (ko)	2016-11-01	2018-05-10	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치, 및 반도체 장치의 제작 방법
KR102490188B1 (ko)	2016-11-09	2023-01-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
KR20190076045A (ko)	2016-11-10	2019-07-01	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 표시 장치의 구동 방법
US10790318B2 (en)	2016-11-22	2020-09-29	Semiconductor Energy Laboratory Co., Ltd.	Display device, method for manufacturing the same, and electronic device
JP7050460B2 (ja)	2016-11-22	2022-04-08	株式会社半導体エネルギー研究所	表示装置
CN121879025A (zh)	2016-11-23	2026-04-17	株式会社半导体能源研究所	显示装置、显示模块及电子设备
US20180145096A1 (en)	2016-11-23	2018-05-24	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
US10756118B2 (en)	2016-11-30	2020-08-25	Semiconductor Energy Laboratory Co., Ltd.	Display device, display module, and electronic device
US10748479B2 (en)	2016-12-07	2020-08-18	Semiconductor Energy Laboratories Co., Ltd.	Semiconductor device, display system, and electronic device
US10147681B2 (en)	2016-12-09	2018-12-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP2018098313A (ja) *	2016-12-12	2018-06-21	株式会社ブイ・テクノロジー	酸化物半導体装置の製造方法
US10319743B2 (en)	2016-12-16	2019-06-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device, display system, and electronic device
CN108307131B (zh)	2016-12-27	2021-08-03	株式会社半导体能源研究所	摄像装置及电子设备
CN110100203B (zh)	2017-01-11	2023-04-21	株式会社半导体能源研究所	显示装置
WO2018130954A1 (ja)	2017-01-16	2018-07-19	株式会社半導体エネルギー研究所	半導体装置
CN110178170B (zh)	2017-01-16	2021-12-07	株式会社半导体能源研究所	显示装置
TWI748035B (zh)	2017-01-20	2021-12-01	日商半導體能源硏究所股份有限公司	顯示系統及電子裝置
WO2018138590A1 (en)	2017-01-24	2018-08-02	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device
WO2018138619A1 (en)	2017-01-30	2018-08-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US10608017B2 (en)	2017-01-31	2020-03-31	Semiconductor Energy Laboratory Co., Ltd.	Display device, display module, and electronic device
US10504470B2 (en)	2017-02-07	2019-12-10	Semiconductor Energy Laboratory Co., Ltd.	Driving method of display device
CN110402497B (zh)	2017-03-29	2024-08-06	株式会社半导体能源研究所	半导体装置、半导体装置的制造方法
JP6498715B2 (ja) *	2017-04-05	2019-04-10	三星ディスプレイ株式會社ＳａｍｓｕｎｇＤｉｓｐｌａｙＣｏ．，Ｌｔｄ．	表示装置
US11031403B2 (en)	2017-04-28	2021-06-08	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method of semiconductor device
KR102755184B1 (ko)	2017-06-27	2025-01-14	가부시키가이샤 한도오따이 에네루기 켄큐쇼	기억 장치
KR102674906B1 (ko)	2017-06-27	2024-06-12	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 시스템 및 데이터 처리 방법
WO2019021098A1 (en)	2017-07-26	2019-01-31	Semiconductor Energy Laboratory Co., Ltd.	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
WO2019030595A1 (ja)	2017-08-11	2019-02-14	株式会社半導体エネルギー研究所	表示装置および電子機器
WO2019038664A1 (ja)	2017-08-25	2019-02-28	株式会社半導体エネルギー研究所	半導体装置、および半導体装置の作製方法
EP3676822A4 (en)	2017-08-31	2021-08-04	Semiconductor Energy Laboratory Co., Ltd.	DISPLAY DEVICE AND ELECTRONIC DEVICE
WO2019048966A1 (ja)	2017-09-05	2019-03-14	株式会社半導体エネルギー研究所	表示システム
US11302278B2 (en)	2017-09-15	2022-04-12	Semiconductor Energy Laboratory Co., Ltd.	Display device including pixel and electronic device
KR102597945B1 (ko)	2017-09-15	2023-11-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
JP2019066517A (ja) *	2017-09-28	2019-04-25	株式会社ジャパンディスプレイ	表示装置
KR102763376B1 (ko)	2017-11-02	2025-02-07	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
WO2019092558A1 (en)	2017-11-09	2019-05-16	Semiconductor Energy Laboratory Co., Ltd.	Display device, operation method thereof, and electronic device
KR102595701B1 (ko)	2017-12-22	2023-10-27	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
KR102746042B1 (ko)	2018-01-05	2024-12-26	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치, 표시 모듈, 및 전자 기기
KR20200111215A (ko)	2018-02-09	2020-09-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치의 구동 방법
WO2019193454A1 (ja)	2018-04-06	2019-10-10	株式会社半導体エネルギー研究所	表示装置、表示装置の動作方法および電子機器
JP7337782B2 (ja)	2018-04-26	2023-09-04	株式会社半導体エネルギー研究所	半導体装置
JP7235731B2 (ja)	2018-04-26	2023-03-08	株式会社半導体エネルギー研究所	表示装置および電子機器
WO2019220267A1 (ja)	2018-05-17	2019-11-21	株式会社半導体エネルギー研究所	表示装置
US11430404B2 (en)	2018-05-25	2022-08-30	Semiconductor Energy Laboratory Co., Ltd.	Display device including pixel and electronic device
CN112219233B (zh)	2018-06-06	2024-10-18	株式会社半导体能源研究所	显示装置、显示模块及电子设备
WO2020008299A1 (ja)	2018-07-05	2020-01-09	株式会社半導体エネルギー研究所	表示装置および電子機器
KR102807348B1 (ko)	2018-08-21	2025-05-13	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
WO2020058798A1 (ja)	2018-09-21	2020-03-26	株式会社半導体エネルギー研究所	表示装置および電子機器
KR20210064238A (ko)	2018-09-28	2021-06-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치의 제작 방법, 표시 장치의 제작 장치
JP7434167B2 (ja)	2018-11-02	2024-02-20	株式会社半導体エネルギー研究所	表示装置
US11663990B2 (en)	2018-11-09	2023-05-30	Semiconductor Energy Laboratory Co., Ltd.	Display apparatus and electronic device
JP6715312B2 (ja) *	2018-12-04	2020-07-01	三星ディスプレイ株式會社ＳａｍｓｕｎｇＤｉｓｐｌａｙＣｏ．，Ｌｔｄ．	表示装置
KR20210102249A (ko)	2018-12-19	2021-08-19	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
KR102019935B1 (ko) *	2018-12-21	2019-11-04	엘지디스플레이 주식회사	박막트랜지스터를 구비한 엑스레이 검출기
JP7477461B2 (ja)	2018-12-26	2024-05-01	株式会社半導体エネルギー研究所	表示装置および電子機器
WO2020161552A1 (ja)	2019-02-05	2020-08-13	株式会社半導体エネルギー研究所	表示装置および電子機器
KR101987800B1 (ko) *	2019-02-08	2019-10-01	삼성디스플레이 주식회사	박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
KR102936835B1 (ko)	2019-05-10	2026-03-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	표시 장치 및 전자 기기
JP7356815B2 (ja) *	2019-05-14	2023-10-05	トライベイルテクノロジーズ，エルエルシー	薄膜トランジスタ基板及び表示装置
JP7486480B2 (ja) *	2019-05-30	2024-05-17	株式会社半導体エネルギー研究所	表示装置および電子機器
WO2020254914A1 (ja)	2019-06-21	2020-12-24	株式会社半導体エネルギー研究所	酸化物半導体を用いる記憶回路
JP7618404B2 (ja)	2019-07-12	2025-01-21	株式会社半導体エネルギー研究所	記憶装置
JP7720782B2 (ja)	2019-08-22	2025-08-08	株式会社半導体エネルギー研究所	メモリセルおよび記憶装置
WO2021048672A1 (ja)	2019-09-09	2021-03-18	株式会社半導体エネルギー研究所	半導体装置
US11210048B2 (en)	2019-10-04	2021-12-28	Semiconductor Energy Laboratory Co., Ltd.	Display device, display module, and electronic device
CN114503202A (zh)	2019-10-11	2022-05-13	株式会社半导体能源研究所	存储装置
CN115769295A (zh)	2020-07-09	2023-03-07	株式会社半导体能源研究所	显示装置及电子设备
TWI907464B (zh)	2020-08-12	2025-12-11	日商半導體能源研究所股份有限公司	顯示裝置、其工作方法以及電子裝置
CN116324956A (zh)	2020-10-01	2023-06-23	株式会社半导体能源研究所	显示装置以及电子设备
US12009432B2 (en)	2021-03-05	2024-06-11	Semiconductor Energy Laboratory Co., Ltd.	Transistor and display device
TW202320033A (zh)	2021-11-05	2023-05-16	日商半導體能源研究所股份有限公司	顯示裝置及電子裝置
CN118284849A (zh)	2021-11-26	2024-07-02	株式会社半导体能源研究所	显示装置及电子设备
JP7790950B2 (ja)	2021-12-09	2025-12-23	株式会社Magnolia White	Ｔｆｔ基板及びｔｆｔ基板の製造方法
TW202329259A (zh)	2021-12-16	2023-07-16	日商半導體能源研究所股份有限公司	顯示裝置及電子裝置
JPWO2024194727A1 (2)	2023-03-17	2024-09-26

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3402030B2 (ja) *	1995-11-10	2003-04-28	ソニー株式会社	薄膜半導体装置製造方法
JP4326604B2 (ja) *	1997-09-29	2009-09-09	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP4164562B2 (ja) *	2002-09-11	2008-10-15	独立行政法人科学技術振興機構	ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003098699A1 (fr) *	2002-05-22	2003-11-27	Sharp Kabushiki Kaisha	Dispositif semiconducteur et afficheur comprenant ce dispositif
JP2004235180A (ja) *	2003-01-28	2004-08-19	Sanyo Electric Co Ltd	半導体装置及びその製造方法
JP4118706B2 (ja) *	2003-02-25	2008-07-16	株式会社半導体エネルギー研究所	液晶表示装置の作製方法
JP2004273732A (ja) *	2003-03-07	2004-09-30	Sharp Corp	アクティブマトリクス基板およびその製造方法
JP2004311702A (ja) *	2003-04-07	2004-11-04	Sumitomo Heavy Ind Ltd	薄膜トランジスタの製造方法および薄膜トランジスタ
JP4108633B2 (ja) *	2003-06-20	2008-06-25	シャープ株式会社	薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7642573B2 (en) *	2004-03-12	2010-01-05	Hewlett-Packard Development Company, L.P.	Semiconductor device
CA2585063C (en) *	2004-11-10	2013-01-15	Canon Kabushiki Kaisha	Light-emitting device

2006
- 2006-09-27 JP JP2006262991A patent/JP5064747B2/ja active Active

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8729544B2 (en)	2008-07-31	2014-05-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9111804B2 (en)	2008-07-31	2015-08-18	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9087745B2 (en)	2008-07-31	2015-07-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8624237B2 (en)	2008-07-31	2014-01-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8129717B2 (en)	2008-07-31	2012-03-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8785242B2 (en)	2008-08-08	2014-07-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8946703B2 (en)	2008-08-08	2015-02-03	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US8941114B2 (en)	2008-09-12	2015-01-27	Semiconductor Energy Laboratory Co., Ltd.	Display device including protective circuit
US8427595B2 (en)	2008-09-19	2013-04-23	Semiconductor Energy Laboratory Co., Ltd.	Display device with pixel portion and common connection portion having oxide semiconductor layers
US9048144B2 (en)	2008-10-03	2015-06-02	Semiconductor Energy Laboratory Co., Ltd.	Display device
US9029851B2 (en)	2008-10-24	2015-05-12	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising an oxide semiconductor layer
US8242494B2 (en)	2008-10-24	2012-08-14	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing thin film transistor using multi-tone mask
US9083334B2 (en)	2008-10-31	2015-07-14	Semiconductor Energy Laboratory Co., Ltd.	Logic circuit
US8373443B2 (en)	2008-10-31	2013-02-12	Semiconductor Energy Laboratory Co., Ltd.	Logic circuit
US8502216B2 (en)	2008-11-07	2013-08-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8058647B2 (en)	2008-11-13	2011-11-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8518739B2 (en)	2008-11-13	2013-08-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8643011B2 (en)	2008-11-20	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8329506B2 (en)	2008-11-20	2012-12-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8318551B2 (en)	2008-12-01	2012-11-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US9136390B2 (en)	2008-12-26	2015-09-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8993386B2 (en)	2009-03-12	2015-03-31	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US9012918B2 (en)	2009-03-27	2015-04-21	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including oxide semiconductor
US8796078B2 (en)	2009-05-29	2014-08-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8394671B2 (en)	2009-06-30	2013-03-12	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US8557641B2 (en)	2009-06-30	2013-10-15	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8513054B2 (en)	2009-06-30	2013-08-20	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US8304300B2 (en)	2009-07-03	2012-11-06	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing display device including transistor
US8735884B2 (en)	2009-07-03	2014-05-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including oxide semiconductor
US8294147B2 (en)	2009-07-10	2012-10-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method the same
US8513053B2 (en)	2009-07-10	2013-08-20	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method the same
US9269794B2 (en)	2009-07-10	2016-02-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method the same
US8441011B2 (en)	2009-07-10	2013-05-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8324027B2 (en)	2009-07-10	2012-12-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US8395153B2 (en)	2009-07-10	2013-03-12	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method the same
US8378343B2 (en)	2009-07-17	2013-02-19	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8643018B2 (en)	2009-07-18	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising a pixel portion and a driver circuit
US8648343B2 (en)	2009-07-23	2014-02-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
US9466756B2 (en)	2009-08-07	2016-10-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8889496B2 (en)	2009-09-04	2014-11-18	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
US8502225B2 (en)	2009-09-04	2013-08-06	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting device and method for manufacturing the same
US8378344B2 (en)	2009-09-04	2013-02-19	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
US9530872B2 (en)	2009-09-24	2016-12-27	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor element and method for manufacturing the same
US9214563B2 (en)	2009-09-24	2015-12-15	Semiconductor Energy Laboratory Co., Ltd.	Oxide semiconductor film and semiconductor device
US8247813B2 (en)	2009-12-04	2012-08-21	Semiconductor Energy Laboratory Co., Ltd.	Display device and electronic device including the same
US8470649B2 (en)	2009-12-04	2013-06-25	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8563976B2 (en)	2009-12-11	2013-10-22	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
US8853684B2 (en)	2010-05-21	2014-10-07	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8823082B2 (en)	2010-08-19	2014-09-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8809852B2 (en)	2010-11-30	2014-08-19	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8643007B2 (en)	2011-02-23	2014-02-04	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8841664B2 (en)	2011-03-04	2014-09-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8912596B2 (en)	2011-07-15	2014-12-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US8841675B2 (en)	2011-09-23	2014-09-23	Semiconductor Energy Laboratory Co., Ltd.	Minute transistor
US8796682B2 (en)	2011-11-11	2014-08-05	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing a semiconductor device
US9331156B2 (en)	2011-12-15	2016-05-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same

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