JP2007201152A - 発光素子の製造方法 - Google Patents

発光素子の製造方法 Download PDF

Info

Publication number: JP2007201152A
Authority: JP; Japan
Prior art keywords: growth temperature; barrier layer; layer; layer growth; well layer
Prior art date: 2006-01-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2006017687A

Other languages

English (en)

Japanese (ja)

Other versions

JP2007201152A5 (de

Inventor

Norikazu Ito

範和伊藤

Atsushi Yamaguchi

敦司山口

Masayuki Sonobe

雅之園部

Ichiyo Tsutsumi

一陽堤

Tetsuya Fujiwara

徹也藤原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Rohm Co Ltd

Original Assignee

Rohm Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-01-26

Filing date

2006-01-26

Publication date

2007-08-09

2006-01-26 Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd

2006-01-26 Priority to JP2006017687A priority Critical patent/JP2007201152A/ja

2007-08-09 Publication of JP2007201152A publication Critical patent/JP2007201152A/ja

2009-03-05 Publication of JP2007201152A5 publication Critical patent/JP2007201152A5/ja

Status Pending legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 20
238000004519 manufacturing process Methods 0.000 title claims abstract description 16
230000004888 barrier function Effects 0.000 claims abstract description 74
239000013078 crystal Substances 0.000 claims abstract description 29
230000015572 biosynthetic process Effects 0.000 abstract description 12
238000005253 cladding Methods 0.000 description 16
230000007547 defect Effects 0.000 description 16
239000004065 semiconductor Substances 0.000 description 13
239000000758 substrate Substances 0.000 description 13
RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 10
IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
239000007787 solid Substances 0.000 description 5
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
230000007423 decrease Effects 0.000 description 3
230000000694 effects Effects 0.000 description 3
229910052594 sapphire Inorganic materials 0.000 description 3
239000010980 sapphire Substances 0.000 description 3
239000012808 vapor phase Substances 0.000 description 3
239000000969 carrier Substances 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000012535 impurity Substances 0.000 description 2
239000000463 material Substances 0.000 description 2
239000010409 thin film Substances 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1

Landscapes

Led Devices (AREA)

JP2006017687A 2006-01-26 2006-01-26 発光素子の製造方法 Pending JP2007201152A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2006017687A JP2007201152A (ja)	2006-01-26	2006-01-26	発光素子の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2006017687A JP2007201152A (ja)	2006-01-26	2006-01-26	発光素子の製造方法

Publications (2)

Publication Number	Publication Date
JP2007201152A true JP2007201152A (ja)	2007-08-09
JP2007201152A5 JP2007201152A5 (de)	2009-03-05

Family

ID=38455434

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2006017687A Pending JP2007201152A (ja)	2006-01-26	2006-01-26	発光素子の製造方法

Country Status (1)

Country	Link
JP (1)	JP2007201152A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2021027193A (ja) *	2019-08-06	2021-02-22	日機装株式会社	窒化物半導体発光素子の製造方法
JP2024063088A (ja) *	2019-01-30	2024-05-10	ヌヴォトンテクノロジージャパン株式会社	半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005129923A (ja) *	2003-10-02	2005-05-19	Showa Denko Kk	窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法
JP2005268743A (ja) *	2004-02-17	2005-09-29	Sumitomo Electric Ind Ltd	量子井戸構造を有する半導体素子、および半導体素子を形成する方法

2006
- 2006-01-26 JP JP2006017687A patent/JP2007201152A/ja active Pending

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005129923A (ja) *	2003-10-02	2005-05-19	Showa Denko Kk	窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法
JP2005268743A (ja) *	2004-02-17	2005-09-29	Sumitomo Electric Ind Ltd	量子井戸構造を有する半導体素子、および半導体素子を形成する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2024063088A (ja) *	2019-01-30	2024-05-10	ヌヴォトンテクノロジージャパン株式会社	半導体発光素子
JP7733148B2 (ja)	2019-01-30	2025-09-02	ヌヴォトンテクノロジージャパン株式会社	半導体発光素子
JP2021027193A (ja) *	2019-08-06	2021-02-22	日機装株式会社	窒化物半導体発光素子の製造方法
JP7137539B2 (ja)	2019-08-06	2022-09-14	日機装株式会社	窒化物半導体発光素子の製造方法

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