JP2008122995A - 反射屈折投影対物レンズ - Google Patents
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- JP2008122995A JP2008122995A JP2008024045A JP2008024045A JP2008122995A JP 2008122995 A JP2008122995 A JP 2008122995A JP 2008024045 A JP2008024045 A JP 2008024045A JP 2008024045 A JP2008024045 A JP 2008024045A JP 2008122995 A JP2008122995 A JP 2008122995A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/004—Systems comprising a plurality of reflections between two or more surfaces, e.g. cells, resonators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0804—Catadioptric systems using two curved mirrors
- G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/22—Telecentric objectives or lens systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】 投影対物レンズの物体面に設けられたパターンを投影対物レンズの像面上に結像するための投影対物レンズにおいて、物体面に設けられたパターンを第1中間像に結像する第1対物レンズ部と、第1中間像を第2中間像に結像する第2対物レンズ部と、第2中間像を像面上に結像する第3対物レンズ部とを有する。
投影対物レンズが、正確に2つの鏡と正確に2つの中間像を有し、投影対物レンズが、ひとみの不明瞭がない明瞭形である。
【選択図】図1
Description
物体面上に設けられたパターンを第1中間像に結像する第1対物レンズ部、
第1中間像を第2中間像に結像する第2対物レンズ部、及び
第2中間像を像面上に結像する第3対物レンズ部、
を備え、第1連続鏡面を有する第1凹面鏡と、第2連続鏡面を有する少なくとも1つの第2凹面鏡とが、第2中間像の上流側に配置され、ひとみ面が、物体面と第1中間像との間、第1及び第2中間像の間、及び第2中間像と像面との間に形成され、かつすべての凹面鏡がひとみ面から光学的に離して配置される、反射屈折投影対物レンズを提供する。
物体面上に設けられたパターンを第1中間像に結像する第1対物レンズ部、
第1中間像を第2中間像に結像する第2対物レンズ部、及び
第2中間像を像面上に結像する第3対物レンズ部、
を備え、第2対物レンズ部は、第1連続鏡面を有する第1凹面鏡と、第2連続鏡面を有する第2凹面鏡とを含み、凹面鏡の凹面鏡面は互いに向き合って、鏡間空間を画定しており、
少なくとも第1中間像が、幾何学的に第1凹面鏡及び第2凹面鏡の間の鏡間空間内に位置する、反射屈折投影対物レンズが提供される。
0.8<|R1/R2|<1.2
の条件が成り立つ。
|p(h)|<pmax
の条件が成り立つ投影対物レンズが好ましい。
図4には、第2実施形態が示されている。構造及び/又は機能の点で図1のものと同一又は同様である機構又は機構群は、同様な番号に100を加えて示されている。
1<D/(|c1|+|c2|)・10−4<6
の条件が満たされる。曲率cは、頂点での曲率半径の逆数である。この条件が満たされれば、第3対物レンズ部でのペッツバール補正と正屈折力との間に良好な釣り合いを得ることができる。
COMP1=Dmax/(Y’・NA2)
と定義される。コンパクトな構造が望まれる場合、ある値の像側視野高さ及び開口数について、第1コンパクト化パラメータCOMP1ができる限り小さくなければならないことは明らかである。
COMP2=COMP1・NL
と定義される。やはり、COMP2の値が小さいことは、コンパクトな光学系であることを表す。
COMP3=COMP1・NL/NOP
と定義される。やはり光学材料使用量が少ない投影対物レンズは、COMP3が小さい値であることによって特徴付けられるであろう。
COMP1<11
好ましくは、COMP1<10.8、より好ましくはCOMP1<10.4、さらに好ましくはCOMP1<10に従うべきである。
好ましくは、COMP2<280、より好ましくはCOMP2<250、さらに好ましくはCOMP2<230に従うべきである。
好ましくは、COMP3<90、より好ましくはCOMP3<80、さらに好ましくはCOMP3<75に従うべきである。
Claims (18)
- 投影対物レンズの物体面に設けられたパターンを投影対物レンズの像面上に結像するための投影対物レンズであって、
物体面に設けられたパターンを第1中間像に結像する第1対物レンズ部と、
第1中間像を第2中間像に結像する第2対物レンズ部と、
第2中間像を像面上に結像する第3対物レンズ部とを有し、
投影対物レンズが、正確に2つの鏡と正確に2つの中間像を有し、
投影対物レンズが、ひとみの不明瞭がない明瞭形である、投影対物レンズ。 - 投影対物レンズが反射屈折投影対物レンズであり、少なくとも1つの鏡が凹面鏡である、請求項1に記載の投影対物レンズ。
- 正確に2つの鏡の各々が凹面鏡である、請求項1又は2に記載の投影対物レンズ。
- 主光線高さが結像プロセスの周縁光線高さを超える位置のひとみ面から、2つの凹面鏡が光学的に離して配置される、請求項1〜3のいずれか1項に記載の投影対物レンズ。
- 第1対物レンズ部が、ジオプトリック結像系であり、
第2対物レンズ部が、第1及び第2凹面鏡を含み、凹面鏡の凹面鏡面が互いに向き合って鏡間空間を画定しており、
少なくとも第1中間像が、幾何学的に第1凹面鏡と第2凹面鏡との間の鏡間空間内に位置する、請求項1〜4のいずれか1項に記載の投影対物レンズ。 - 第1中間像及び第2中間像の両方が、幾何学的に第1凹面鏡と第2凹面鏡との間の鏡間空間内に位置する、請求項5に記載の投影対物レンズ。
- 第1対物レンズ部及び第2対物レンズ部及び第3対物レンズ部が、共通の直線状の光軸を共用する、請求項1〜6のいずれか1項に記載の投影対物レンズ。
- 凹面鏡の少なくとも1つの鏡面が非球面である、請求項2〜7のいずれか1項に記載の投影対物レンズ。
- 第1凹面鏡から反射した放射光が、第2凹面鏡に当たる前に光軸と交差するように構成されている、請求項5〜8のいずれか1項に記載の投影対物レンズ。
- 第1対物レンズ部が、純粋屈折型であり、第2対物レンズ部が、カトプトリック又は反射屈折型であり、第3対物レンズ部が、純粋屈折型である、請求項1〜9のいずれか1項に記載の投影対物レンズ。
- 凸面鏡をまったく含まない、請求項1〜10のいずれか1項に記載の投影対物レンズ。
- 投影対物レンズが折り曲げ平面鏡をまったく含まない、請求項1〜11のいずれか1項に記載の投影対物レンズ。
- 凹面鏡での最大光ビーム高さが、第3対物レンズ部内での最大光ビーム高さの1.5倍未満である、請求項2〜12のいずれか1項に記載の投影対物レンズ。
- 像側開口数NA>0.9である、請求項1〜13のいずれか1項に記載の投影対物レンズ。
- 投影対物レンズが、収差に関して適応させた液浸対物レンズとして構成されていて、最後の光学素子と像面との間の像側作動距離が、屈折率が1より相当に大きい浸漬媒体で満たされるようになっている、請求項1〜14のいずれか1項に記載の投影対物レンズ。
- 浸漬媒体と一緒に使用されるとき、像側開口数NA>1.1である、請求項1〜15のいずれか1項に記載の投影対物レンズ。
- 照明系と投影対物レンズとを有してマイクロリソグラフィに使用される投影露光系であって、投影対物レンズが、請求項1〜16のいずれか1項に従って構成される、投影露光系。
- 半導体デバイス又は他の形式のマイクロデバイスを作製する方法であって、
所定パターンを有するマスクを設ける工程と、
所定波長を有する紫外線でマスクを照明する工程と、
請求項1〜16のいずれか1項に記載の投影対物レンズを使用して、投影対物レンズの像面の近傍に配置された感光基材上にパターンの像を投影する工程と、
を含む方法。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53624804P | 2004-01-14 | 2004-01-14 | |
| US58750404P | 2004-07-14 | 2004-07-14 | |
| US59177504P | 2004-07-27 | 2004-07-27 | |
| US61282304P | 2004-09-24 | 2004-09-24 | |
| US61767404P | 2004-10-13 | 2004-10-13 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006548262A Division JP5420821B2 (ja) | 2004-01-14 | 2005-01-13 | 反射屈折投影対物レンズ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2008122995A true JP2008122995A (ja) | 2008-05-29 |
Family
ID=34799906
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006548262A Expired - Fee Related JP5420821B2 (ja) | 2004-01-14 | 2005-01-13 | 反射屈折投影対物レンズ |
| JP2008009105A Pending JP2008152272A (ja) | 2004-01-14 | 2008-01-18 | 反射屈折投影対物レンズ |
| JP2008017432A Expired - Fee Related JP5420845B2 (ja) | 2004-01-14 | 2008-01-29 | 反射屈折投影対物レンズ |
| JP2008024045A Pending JP2008122995A (ja) | 2004-01-14 | 2008-02-04 | 反射屈折投影対物レンズ |
| JP2012193455A Expired - Fee Related JP5705182B2 (ja) | 2004-01-14 | 2012-09-03 | 反射屈折投影対物レンズ |
| JP2012193348A Expired - Lifetime JP5548743B2 (ja) | 2004-01-14 | 2012-09-03 | 反射屈折投影対物レンズ |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006548262A Expired - Fee Related JP5420821B2 (ja) | 2004-01-14 | 2005-01-13 | 反射屈折投影対物レンズ |
| JP2008009105A Pending JP2008152272A (ja) | 2004-01-14 | 2008-01-18 | 反射屈折投影対物レンズ |
| JP2008017432A Expired - Fee Related JP5420845B2 (ja) | 2004-01-14 | 2008-01-29 | 反射屈折投影対物レンズ |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012193455A Expired - Fee Related JP5705182B2 (ja) | 2004-01-14 | 2012-09-03 | 反射屈折投影対物レンズ |
| JP2012193348A Expired - Lifetime JP5548743B2 (ja) | 2004-01-14 | 2012-09-03 | 反射屈折投影対物レンズ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7385756B2 (ja) |
| EP (2) | EP1709472B1 (ja) |
| JP (6) | JP5420821B2 (ja) |
| KR (7) | KR101407204B1 (ja) |
| CN (5) | CN102207608B (ja) |
| DE (1) | DE602005008707D1 (ja) |
| TW (5) | TWI345642B (ja) |
| WO (1) | WO2005069055A2 (ja) |
Families Citing this family (207)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| US7869121B2 (en) * | 2003-02-21 | 2011-01-11 | Kla-Tencor Technologies Corporation | Small ultra-high NA catadioptric objective using aspheric surfaces |
| EP2466621B1 (en) | 2003-02-26 | 2015-04-01 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR101181688B1 (ko) | 2003-03-25 | 2012-09-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| WO2004090634A2 (en) * | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
| JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| KR101177330B1 (ko) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| KR101159564B1 (ko) | 2003-04-11 | 2012-06-25 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법 |
| KR20170016014A (ko) | 2003-04-11 | 2017-02-10 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
| SG10201405231YA (en) | 2003-05-06 | 2014-09-26 | Nippon Kogaku Kk | Projection optical system, exposure apparatus, and exposure method |
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| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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