JP2009246218A - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置 Download PDF

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Publication number
JP2009246218A
JP2009246218A JP2008092633A JP2008092633A JP2009246218A JP 2009246218 A JP2009246218 A JP 2009246218A JP 2008092633 A JP2008092633 A JP 2008092633A JP 2008092633 A JP2008092633 A JP 2008092633A JP 2009246218 A JP2009246218 A JP 2009246218A
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Prior art keywords
pad
region
semiconductor
film
semiconductor device
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JP2008092633A
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English (en)
Japanese (ja)
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JP2009246218A5 (2
Inventor
Toshihiko Akiba
俊彦 秋葉
Bunji Yasumura
文次 安村
Narihisa Sato
斉尚 佐藤
Hiromi Abe
宏美 阿部
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2008092633A priority Critical patent/JP2009246218A/ja
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to US12/413,971 priority patent/US8101433B2/en
Publication of JP2009246218A publication Critical patent/JP2009246218A/ja
Publication of JP2009246218A5 publication Critical patent/JP2009246218A5/ja
Priority to US13/310,261 priority patent/US8415199B2/en
Priority to US13/802,704 priority patent/US8912540B2/en
Priority to US14/465,975 priority patent/US9165845B2/en
Priority to US14/876,787 priority patent/US20160035636A1/en
Priority to US15/219,254 priority patent/US9646901B2/en
Priority to US15/494,501 priority patent/US9911673B2/en
Priority to US15/876,833 priority patent/US10134648B2/en
Priority to US16/167,492 priority patent/US20190057913A1/en
Priority to US16/519,150 priority patent/US10566255B2/en
Pending legal-status Critical Current

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JP2008092633A 2008-03-31 2008-03-31 半導体装置の製造方法および半導体装置 Pending JP2009246218A (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2008092633A JP2009246218A (ja) 2008-03-31 2008-03-31 半導体装置の製造方法および半導体装置
US12/413,971 US8101433B2 (en) 2008-03-31 2009-03-30 Semiconductor device and manufacturing method of the same
US13/310,261 US8415199B2 (en) 2008-03-31 2011-12-02 Manufacturing method of semiconductor device
US13/802,704 US8912540B2 (en) 2008-03-31 2013-03-13 Semiconductor device
US14/465,975 US9165845B2 (en) 2008-03-31 2014-08-22 Semiconductor device
US14/876,787 US20160035636A1 (en) 2008-03-31 2015-10-06 Manufacturing Method of Semiconductor Device
US15/219,254 US9646901B2 (en) 2008-03-31 2016-07-25 Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area
US15/494,501 US9911673B2 (en) 2008-03-31 2017-04-22 Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area
US15/876,833 US10134648B2 (en) 2008-03-31 2018-01-22 Manufacturing method of semiconductor device
US16/167,492 US20190057913A1 (en) 2008-03-31 2018-10-22 Manufacturing method of semiconductor device
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US20090243118A1 (en) 2009-10-01

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