JP2017228653A - 切削方法、及び、切削装置 - Google Patents
切削方法、及び、切削装置 Download PDFInfo
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- JP2017228653A JP2017228653A JP2016123811A JP2016123811A JP2017228653A JP 2017228653 A JP2017228653 A JP 2017228653A JP 2016123811 A JP2016123811 A JP 2016123811A JP 2016123811 A JP2016123811 A JP 2016123811A JP 2017228653 A JP2017228653 A JP 2017228653A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/005—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
1a 表面
3 分割予定ライン
5 デバイス
7 ダイシングテープ
9 フレーム
2 切削装置
4 基台
6 保持テーブル(保持手段)
6a 保持面
6b 流路
6c 吸引源
6d 保持テーブル移動方向
8 ブレードユニット(切削手段)
10 X軸移動機構(移動手段)
12 X軸ガイドレール
14 X軸移動テーブル
16 X軸ボールネジ
18 X軸パルスモータ
20 支持台
22 クランプ
24 Y軸移動機構(割り出し送り手段)
26 Y軸ガイドレール
28 Y軸移動テーブル
28a 基部
28b 壁部
30 Y軸ボールネジ
32 Y軸パルスモータ
34 Z軸移動機構
36 Z軸ガイドレール
38 Z軸移動テーブル
40 Z軸パルスモータ
42 切削ブレード
42a 切削進行方向
43 切削液供給手段
43a 撮像装置
43b 切削液供給パイプ
44 クラック検出ユニット
46 筐体
48 水
50 底板
52 超音波発振部
52a 超音波振動子
54 超音波発振受信部
54a 超音波振動子
56 パルス電圧発生部
58 波形検出部
60 クラック判定部
62 報知部
64 供給口
66 供給源
68 制御部
Claims (3)
- 被加工物を切削ブレードで切削する切削方法であって、
被加工物を保持テーブルで保持する保持ステップと、
該保持ステップを実施した後、該保持テーブルで保持された被加工物に回転する切削ブレードを切り込ませるとともに該保持テーブルと該切削ブレードとを相対移動させることで被加工物を該切削ブレードで切削する切削ステップと、を備え、
該切削ステップでは、該切削ブレードによる被加工物の切削加工が進行する切削進行方向において該切削ブレードよりも後方に配置されたクラック検出手段で被加工物中のクラックの有無を検出しつつ切削を遂行することを特徴とする切削方法。 - 該切削ステップの実施中に該クラック検出手段で被加工物のクラックを検出した際に該保持テーブルと該切削ブレードとの相対移動を停止するまたは相対移動の速度を遅くすることを特徴とする請求項1に記載の切削方法。
- 被加工物を切削する切削装置であって、
被加工物を保持する保持テーブルと、
該保持テーブルで保持された被加工物を切削する切削ブレードを有する切削手段と、
該切削ブレードと該保持テーブルとを相対移動させる移動手段と、
該切削ブレードによる被加工物の切削加工が進行する切削進行方向において該切削ブレードよりも後方に配置され被加工物中のクラックの有無を検出するクラック検出手段と、
を備えることを特徴とする切削装置。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016123811A JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
| TW106115663A TWI725185B (zh) | 2016-06-22 | 2017-05-11 | 切削方法及切削裝置 |
| KR1020170068831A KR102331680B1 (ko) | 2016-06-22 | 2017-06-02 | 절삭 방법 및 절삭 장치 |
| SG10201704583TA SG10201704583TA (en) | 2016-06-22 | 2017-06-05 | Cutting method for cutting processing-target object and cutting apparatus that cuts processing-target object |
| US15/621,165 US10121672B2 (en) | 2016-06-22 | 2017-06-13 | Cutting method for cutting processing-target object and cutting apparatus that cuts processing-target object |
| CN201710462981.5A CN107520976B (zh) | 2016-06-22 | 2017-06-19 | 切削方法和切削装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016123811A JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017228653A true JP2017228653A (ja) | 2017-12-28 |
| JP6808267B2 JP6808267B2 (ja) | 2021-01-06 |
Family
ID=60677879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016123811A Active JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10121672B2 (ja) |
| JP (1) | JP6808267B2 (ja) |
| KR (1) | KR102331680B1 (ja) |
| CN (1) | CN107520976B (ja) |
| SG (1) | SG10201704583TA (ja) |
| TW (1) | TWI725185B (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190083992A (ko) * | 2018-01-05 | 2019-07-15 | 가부시기가이샤 디스코 | 가공 방법 |
| JP2020004785A (ja) * | 2018-06-26 | 2020-01-09 | 株式会社ディスコ | デバイスチップの強度検出方法 |
| JP2021015888A (ja) * | 2019-07-11 | 2021-02-12 | 株式会社ディスコ | 製造方法 |
| JP2021084152A (ja) * | 2019-11-26 | 2021-06-03 | 株式会社ディスコ | 加工溝検出装置及び切削装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6802085B2 (ja) * | 2017-02-21 | 2020-12-16 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7106298B2 (ja) * | 2018-03-05 | 2022-07-26 | 株式会社ディスコ | チャックテーブル、切削装置、及び、切削装置のチャックテーブル修正方法 |
| JP7503362B2 (ja) * | 2020-02-14 | 2024-06-20 | 株式会社ディスコ | 切削装置、及び、切削方法 |
| CN112693003B (zh) * | 2020-12-29 | 2022-12-23 | 安徽三合建设有限公司 | 一种裂缝检测分离式碳酸钙板处理装置 |
| CN116330381B (zh) * | 2021-09-30 | 2025-09-12 | 福建迈可博电子科技集团股份有限公司 | 一种多动作联动的射频连接器绝缘子对切装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10312979A (ja) * | 1997-05-12 | 1998-11-24 | Disco Abrasive Syst Ltd | ウェーハの切削状況の検出方法 |
| JP2005167145A (ja) * | 2003-12-05 | 2005-06-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法及びダイシング装置 |
| JP2012256749A (ja) * | 2011-06-09 | 2012-12-27 | Disco Abrasive Syst Ltd | 切削装置 |
| JP2015025660A (ja) * | 2013-07-24 | 2015-02-05 | 株式会社ディスコ | 割れ厚さ検出装置 |
| JP2016009751A (ja) * | 2014-06-24 | 2016-01-18 | 株式会社東京精密 | ダイシング装置及びダイシング方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07130806A (ja) * | 1993-11-08 | 1995-05-19 | Disco Abrasive Syst Ltd | カーフチェック方法 |
| JPH09199451A (ja) | 1996-01-12 | 1997-07-31 | Disco Abrasive Syst Ltd | ダイシング方法及びその装置 |
| JP2004273895A (ja) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
| JP4481668B2 (ja) * | 2004-02-03 | 2010-06-16 | 株式会社ディスコ | 切削装置 |
| JP2007088028A (ja) * | 2005-09-20 | 2007-04-05 | Disco Abrasive Syst Ltd | 分割装置及びウェーハのアライメント方法 |
| JP2009054904A (ja) * | 2007-08-29 | 2009-03-12 | Disco Abrasive Syst Ltd | 切削方法および切削装置 |
| JP5623791B2 (ja) * | 2010-06-01 | 2014-11-12 | 株式会社ディスコ | サファイア基板の加工方法 |
| CN204271041U (zh) * | 2014-10-20 | 2015-04-15 | 上海技美电子科技有限公司 | 晶圆检测装置 |
-
2016
- 2016-06-22 JP JP2016123811A patent/JP6808267B2/ja active Active
-
2017
- 2017-05-11 TW TW106115663A patent/TWI725185B/zh active
- 2017-06-02 KR KR1020170068831A patent/KR102331680B1/ko active Active
- 2017-06-05 SG SG10201704583TA patent/SG10201704583TA/en unknown
- 2017-06-13 US US15/621,165 patent/US10121672B2/en active Active
- 2017-06-19 CN CN201710462981.5A patent/CN107520976B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10312979A (ja) * | 1997-05-12 | 1998-11-24 | Disco Abrasive Syst Ltd | ウェーハの切削状況の検出方法 |
| JP2005167145A (ja) * | 2003-12-05 | 2005-06-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法及びダイシング装置 |
| JP2012256749A (ja) * | 2011-06-09 | 2012-12-27 | Disco Abrasive Syst Ltd | 切削装置 |
| JP2015025660A (ja) * | 2013-07-24 | 2015-02-05 | 株式会社ディスコ | 割れ厚さ検出装置 |
| JP2016009751A (ja) * | 2014-06-24 | 2016-01-18 | 株式会社東京精密 | ダイシング装置及びダイシング方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190083992A (ko) * | 2018-01-05 | 2019-07-15 | 가부시기가이샤 디스코 | 가공 방법 |
| KR102631713B1 (ko) * | 2018-01-05 | 2024-01-30 | 가부시기가이샤 디스코 | 가공 방법 |
| JP2020004785A (ja) * | 2018-06-26 | 2020-01-09 | 株式会社ディスコ | デバイスチップの強度検出方法 |
| JP2021015888A (ja) * | 2019-07-11 | 2021-02-12 | 株式会社ディスコ | 製造方法 |
| JP7308680B2 (ja) | 2019-07-11 | 2023-07-14 | 株式会社ディスコ | 製造方法 |
| JP2021084152A (ja) * | 2019-11-26 | 2021-06-03 | 株式会社ディスコ | 加工溝検出装置及び切削装置 |
| JP7370230B2 (ja) | 2019-11-26 | 2023-10-27 | 株式会社ディスコ | 加工溝検出装置及び切削装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201810399A (zh) | 2018-03-16 |
| TWI725185B (zh) | 2021-04-21 |
| CN107520976B (zh) | 2021-08-17 |
| KR20180000294A (ko) | 2018-01-02 |
| US10121672B2 (en) | 2018-11-06 |
| JP6808267B2 (ja) | 2021-01-06 |
| CN107520976A (zh) | 2017-12-29 |
| KR102331680B1 (ko) | 2021-11-25 |
| SG10201704583TA (en) | 2018-01-30 |
| US20170372908A1 (en) | 2017-12-28 |
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