JP2809131B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2809131B2
JP2809131B2 JP7135605A JP13560595A JP2809131B2 JP 2809131 B2 JP2809131 B2 JP 2809131B2 JP 7135605 A JP7135605 A JP 7135605A JP 13560595 A JP13560595 A JP 13560595A JP 2809131 B2 JP2809131 B2 JP 2809131B2
Authority
JP
Japan
Prior art keywords
insulating film
silicon oxide
oxide film
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7135605A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08306784A (ja
Inventor
博光 波田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7135605A priority Critical patent/JP2809131B2/ja
Priority to US08/644,339 priority patent/US5861653A/en
Priority to KR1019960016071A priority patent/KR100231669B1/ko
Priority to TW085105590A priority patent/TW295711B/zh
Publication of JPH08306784A publication Critical patent/JPH08306784A/ja
Application granted granted Critical
Publication of JP2809131B2 publication Critical patent/JP2809131B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP7135605A 1995-05-11 1995-05-11 半導体装置の製造方法 Expired - Fee Related JP2809131B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7135605A JP2809131B2 (ja) 1995-05-11 1995-05-11 半導体装置の製造方法
US08/644,339 US5861653A (en) 1995-05-11 1996-05-10 Semiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereof
KR1019960016071A KR100231669B1 (ko) 1995-05-11 1996-05-10 층간 절연막에 형성된 기체절연층을 갖는 반도체장치및그제조방법
TW085105590A TW295711B (2) 1995-05-11 1996-05-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7135605A JP2809131B2 (ja) 1995-05-11 1995-05-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH08306784A JPH08306784A (ja) 1996-11-22
JP2809131B2 true JP2809131B2 (ja) 1998-10-08

Family

ID=15155727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7135605A Expired - Fee Related JP2809131B2 (ja) 1995-05-11 1995-05-11 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US5861653A (2)
JP (1) JP2809131B2 (2)
KR (1) KR100231669B1 (2)
TW (1) TW295711B (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2767219B1 (fr) * 1997-08-08 1999-09-17 Commissariat Energie Atomique Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi
EP0924760A3 (en) * 1997-12-19 2001-05-16 Texas Instruments Incorporated Address transition detection circuit
JP4278333B2 (ja) * 2001-03-13 2009-06-10 富士通株式会社 半導体装置及びその製造方法
US7501157B2 (en) * 2001-06-26 2009-03-10 Accelr8 Technology Corporation Hydroxyl functional surface coating
US7892972B2 (en) * 2006-02-03 2011-02-22 Micron Technology, Inc. Methods for fabricating and filling conductive vias and conductive vias so formed
CN114335013A (zh) * 2021-12-24 2022-04-12 Tcl华星光电技术有限公司 阵列基板及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632723A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Semiconductor device
JPH01238146A (ja) * 1988-03-18 1989-09-22 Nec Corp 半導体装置およびその製造方法
US4987101A (en) * 1988-12-16 1991-01-22 International Business Machines Corporation Method for providing improved insulation in VLSI and ULSI circuits
JP2960538B2 (ja) * 1990-11-30 1999-10-06 関西日本電気株式会社 半導体装置の製造方法
US5328868A (en) * 1992-01-14 1994-07-12 International Business Machines Corporation Method of forming metal connections
JPH05283542A (ja) * 1992-03-31 1993-10-29 Mitsubishi Electric Corp 半導体集積回路装置及びその製造方法
US5413962A (en) * 1994-07-15 1995-05-09 United Microelectronics Corporation Multi-level conductor process in VLSI fabrication utilizing an air bridge
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
JPH08306775A (ja) * 1995-05-01 1996-11-22 Hitachi Ltd 半導体装置及びその製造方法
TW346652B (en) * 1996-11-09 1998-12-01 Winbond Electronics Corp Semiconductor production process

Also Published As

Publication number Publication date
US5861653A (en) 1999-01-19
JPH08306784A (ja) 1996-11-22
TW295711B (2) 1997-01-11
KR960043124A (ko) 1996-12-23
KR100231669B1 (ko) 1999-11-15

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