JP3856889B2 - 反射型表示装置および電子デバイス - Google Patents

反射型表示装置および電子デバイス Download PDF

Info

Publication number
JP3856889B2
JP3856889B2 JP03841697A JP3841697A JP3856889B2 JP 3856889 B2 JP3856889 B2 JP 3856889B2 JP 03841697 A JP03841697 A JP 03841697A JP 3841697 A JP3841697 A JP 3841697A JP 3856889 B2 JP3856889 B2 JP 3856889B2
Authority
JP
Japan
Prior art keywords
insulating layer
wiring
tft
base film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03841697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10221717A (ja
JPH10221717A5 (2
Inventor
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP03841697A priority Critical patent/JP3856889B2/ja
Priority to US09/018,078 priority patent/US6115094A/en
Priority to KR1019980003216A priority patent/KR100548793B1/ko
Publication of JPH10221717A publication Critical patent/JPH10221717A/ja
Priority to US09/605,750 priority patent/US6400434B1/en
Priority to US10/115,187 priority patent/US7176993B2/en
Publication of JPH10221717A5 publication Critical patent/JPH10221717A5/ja
Application granted granted Critical
Publication of JP3856889B2 publication Critical patent/JP3856889B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP03841697A 1997-02-06 1997-02-06 反射型表示装置および電子デバイス Expired - Fee Related JP3856889B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP03841697A JP3856889B2 (ja) 1997-02-06 1997-02-06 反射型表示装置および電子デバイス
US09/018,078 US6115094A (en) 1997-02-06 1998-02-03 Reflection type display device and electronic device
KR1019980003216A KR100548793B1 (ko) 1997-02-06 1998-02-05 반사형표시장치및전자장치
US09/605,750 US6400434B1 (en) 1997-02-06 2000-06-27 Reflection type display device having display part covered with insulating layer in which carbon-based material or pigment is dispersed
US10/115,187 US7176993B2 (en) 1997-02-06 2002-04-02 Reflection type display device using a light shading film with a light shading material evenly dispersed throughout

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03841697A JP3856889B2 (ja) 1997-02-06 1997-02-06 反射型表示装置および電子デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006220532A Division JP4447584B2 (ja) 2006-08-11 2006-08-11 表示装置および電子デバイス

Publications (3)

Publication Number Publication Date
JPH10221717A JPH10221717A (ja) 1998-08-21
JPH10221717A5 JPH10221717A5 (2) 2005-01-06
JP3856889B2 true JP3856889B2 (ja) 2006-12-13

Family

ID=12524714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03841697A Expired - Fee Related JP3856889B2 (ja) 1997-02-06 1997-02-06 反射型表示装置および電子デバイス

Country Status (3)

Country Link
US (3) US6115094A (2)
JP (1) JP3856889B2 (2)
KR (1) KR100548793B1 (2)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3343645B2 (ja) * 1997-03-25 2002-11-11 シャープ株式会社 液晶表示装置及びその製造方法
JP4105261B2 (ja) * 1997-08-20 2008-06-25 株式会社半導体エネルギー研究所 電子機器の作製方法
JP3230664B2 (ja) * 1998-04-23 2001-11-19 日本電気株式会社 液晶表示装置とその製造方法
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
EP2264771A3 (en) 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US7821065B2 (en) 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
US6861670B1 (en) * 1999-04-01 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multi-layer wiring
JP3826618B2 (ja) * 1999-05-18 2006-09-27 ソニー株式会社 液晶表示装置
JP4666723B2 (ja) * 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW490713B (en) * 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4193339B2 (ja) * 1999-09-29 2008-12-10 セイコーエプソン株式会社 液晶装置及び投射型表示装置並びに液晶装置の製造方法
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6476415B1 (en) * 2000-07-20 2002-11-05 Three-Five Systems, Inc. Wafer scale processing
US6562671B2 (en) * 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
KR100806893B1 (ko) * 2001-07-03 2008-02-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
TWI261135B (en) * 2002-05-28 2006-09-01 Chi Mei Optoelectronics Corp Method for fabricating thin film transistors of a TFT-LCD
US7238963B2 (en) * 2003-04-28 2007-07-03 Tpo Displays Corp. Self-aligned LDD thin-film transistor and method of fabricating the same
US20050074914A1 (en) * 2003-10-06 2005-04-07 Toppoly Optoelectronics Corp. Semiconductor device and method of fabrication the same
KR100900404B1 (ko) * 2003-12-22 2009-06-02 엘지디스플레이 주식회사 액정표시소자의 제조 방법
KR100692685B1 (ko) * 2003-12-29 2007-03-14 비오이 하이디스 테크놀로지 주식회사 반사투과형 액정표시장치용 어레이 기판 및 그의 제조 방법
JP2005258084A (ja) * 2004-03-11 2005-09-22 Nec Corp 液晶表示装置とその駆動方法
US20050258488A1 (en) * 2004-04-27 2005-11-24 Toppoly Optoelectronics Corp. Serially connected thin film transistors and fabrication methods thereof
US7410842B2 (en) * 2005-04-19 2008-08-12 Lg. Display Co., Ltd Method for fabricating thin film transistor of liquid crystal display device
KR20070002933A (ko) * 2005-06-30 2007-01-05 엘지.필립스 엘시디 주식회사 폴리 박막 트랜지스터 기판 및 그 제조 방법
KR101553691B1 (ko) 2008-07-10 2015-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
CN101866075A (zh) * 2010-04-30 2010-10-20 汕头超声显示器（二厂）有限公司 反射型tft液晶显示器及其制造方法
KR20160076034A (ko) * 2014-12-22 2016-06-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
JPS56121014A (en) * 1980-02-28 1981-09-22 Sharp Corp Liquid-crystal display device
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS60203915A (ja) * 1984-03-28 1985-10-15 Matsushita Electric Ind Co Ltd 大型液晶デイスプレイ
JPH0769530B2 (ja) * 1987-02-16 1995-07-31 株式会社日立製作所 液晶表示パネル及びその製造方法
US4906071A (en) * 1987-03-31 1990-03-06 Matsushita Electric Industrial Co., Ltd. Liquid crystal display device and video projector incorporating same with particular driving circuit connection scheme
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
DE3809092A1 (de) 1988-03-18 1989-09-28 Graetz Nokia Gmbh Duennschichttransistor mit lichtschutz aus amorphem kohlenstoff und verfahren zur herstellung des lichtschutzes
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JPH0792574B2 (ja) * 1988-12-21 1995-10-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 液晶表示装置およびその製造方法
JPH0752266B2 (ja) * 1989-03-02 1995-06-05 松下電器産業株式会社 反射型液晶表示デバイス
US5164853A (en) * 1989-04-06 1992-11-17 Ricoh Company, Ltd. Liquid crystal display panel with plural substrates
JP2799875B2 (ja) * 1989-05-20 1998-09-21 株式会社リコー 液晶表示装置
JP2765140B2 (ja) * 1989-12-22 1998-06-11 三菱電機株式会社 液晶ディスプレイ装置
US5148301A (en) * 1990-02-27 1992-09-15 Casio Computer Co., Ltd. Liquid crystal display device having a driving circuit inside the seal boundary
JPH03258199A (ja) 1990-03-08 1991-11-18 Onkyo Corp ステレオ再生用スピーカ装置
US5200847A (en) * 1990-05-01 1993-04-06 Casio Computer Co., Ltd. Liquid crystal display device having driving circuit forming on a heat-resistant sub-substrate
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
JP2655941B2 (ja) 1991-01-30 1997-09-24 シャープ株式会社 アクティブマトリクス型液晶表示装置およびその製造方法
EP0554060A3 (en) * 1992-01-31 1993-12-01 Canon Kk Liquid crystal display apparatus
JPH05243579A (ja) * 1992-02-28 1993-09-21 Canon Inc 半導体装置
JP3140837B2 (ja) * 1992-05-29 2001-03-05 シャープ株式会社 入力一体型表示装置
JPH06208136A (ja) 1993-01-12 1994-07-26 Toshiba Corp 液晶表示装置
US5821622A (en) * 1993-03-12 1998-10-13 Kabushiki Kaisha Toshiba Liquid crystal display device
JPH06313899A (ja) * 1993-04-30 1994-11-08 Sharp Corp 液晶表示装置
JPH0764110A (ja) * 1993-08-30 1995-03-10 Kyocera Corp アクティブマトリックス基板
JPH0772473A (ja) 1993-09-01 1995-03-17 Sony Corp カラー液晶表示装置
JP3431033B2 (ja) * 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP2759415B2 (ja) * 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP3153065B2 (ja) * 1993-12-27 2001-04-03 株式会社半導体エネルギー研究所 半導体集積回路の電極の作製方法
MY114271A (en) * 1994-05-12 2002-09-30 Casio Computer Co Ltd Reflection type color liquid crystal display device
TW426806B (en) * 1994-05-18 2001-03-21 Toshiba Corp Fabricating method of liquid crystal display apparatus
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH0864824A (ja) * 1994-08-24 1996-03-08 Toshiba Corp 薄膜トランジスタおよびその製造方法
JPH08122761A (ja) * 1994-10-20 1996-05-17 Fujitsu Ltd 液晶表示素子とその製造方法
US5608557A (en) * 1995-01-03 1997-03-04 Xerox Corporation Circuitry with gate line crossing semiconductor line at two or more channels
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
JP2666122B2 (ja) * 1995-01-30 1997-10-22 カシオ計算機株式会社 薄膜トランジスタ基板
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3476990B2 (ja) 1995-03-31 2003-12-10 株式会社東芝 表示装置用基板およびそれを用いた液晶表示装置並びにその製造方法
US5706064A (en) * 1995-03-31 1998-01-06 Kabushiki Kaisha Toshiba LCD having an organic-inorganic hybrid glass functional layer
JPH0926603A (ja) * 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
JP3258199B2 (ja) 1995-05-24 2002-02-18 沖電気工業株式会社 半導体装置のパターン形成方法
JP2882319B2 (ja) * 1995-08-24 1999-04-12 日本電気株式会社 液晶パネル
JP3205767B2 (ja) * 1995-09-13 2001-09-04 キヤノン株式会社 透過型液晶表示装置
JPH09105953A (ja) * 1995-10-12 1997-04-22 Semiconductor Energy Lab Co Ltd 液晶表示装置
US6268895B1 (en) * 1995-10-27 2001-07-31 Sharp Kabushiki Kaisha Liquid crystal display device having light shield in periphery of display
US5739880A (en) * 1995-12-01 1998-04-14 Hitachi, Ltd. Liquid crystal display device having a shielding film for shielding light from a light source
US5782665A (en) * 1995-12-29 1998-07-21 Xerox Corporation Fabricating array with storage capacitor between cell electrode and dark matrix
WO1997028483A1 (en) * 1996-01-30 1997-08-07 Seiko Epson Corporation Substrate for liquid crystal display, method of producing substrate for liquid crystal display, liquid crystal display and electronic device
US5815226A (en) * 1996-02-29 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of fabricating same
JP3332773B2 (ja) * 1996-03-15 2002-10-07 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス基板の製造方法
JP3268723B2 (ja) * 1996-03-25 2002-03-25 シャープ株式会社 アクティブマトリクス基板および液晶表示装置
KR100244450B1 (ko) 1996-08-30 2000-02-01 구본준 액정표시장치의 기판의 제조방법 및 그 제조방법에 의하여 제조 되는 기판의 구조
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US6211928B1 (en) * 1996-03-26 2001-04-03 Lg Electronics Inc. Liquid crystal display and method for manufacturing the same
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
TW325608B (en) * 1996-04-17 1998-01-21 Toshiba Co Ltd Timing signal generation circuit and a display device using such a circuit
KR100209277B1 (ko) * 1996-04-25 1999-07-15 구자홍 박막트랜지스터 어레이 기판 및 그 제조방법
KR100194926B1 (ko) * 1996-05-11 1999-06-15 구자홍 구동회로 일체형 액정표시소자 및 제조방법
US6188452B1 (en) * 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US5686335A (en) * 1996-07-22 1997-11-11 Taiwan Semiconductor Manufacturing Company, Ltd Method of making high-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channel
JPH1090719A (ja) 1996-09-13 1998-04-10 Toshiba Corp 液晶表示装置
JP3150072B2 (ja) 1996-10-29 2001-03-26 松下電器産業株式会社 液晶光学素子の製造方法
JPH10142628A (ja) 1996-11-07 1998-05-29 Matsushita Electric Ind Co Ltd アクティブマトリクス基板およびその製造方法
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
JP4086925B2 (ja) * 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
TW386238B (en) * 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3264364B2 (ja) * 1997-01-21 2002-03-11 シャープ株式会社 液晶表示装置の製造方法
US5920772A (en) * 1997-06-27 1999-07-06 Industrial Technology Research Institute Method of fabricating a hybrid polysilicon/amorphous silicon TFT
JP3919900B2 (ja) * 1997-09-19 2007-05-30 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
US6049365A (en) * 1998-05-07 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Liquid crystal displaying apparatus with a converter not exposed to liquid crystal

Also Published As

Publication number Publication date
JPH10221717A (ja) 1998-08-21
US20020109660A1 (en) 2002-08-15
US6400434B1 (en) 2002-06-04
US7176993B2 (en) 2007-02-13
KR100548793B1 (ko) 2006-03-23
KR19980071093A (ko) 1998-10-26
US6115094A (en) 2000-09-05

Similar Documents

Publication Publication Date Title
JP3856889B2 (ja) 反射型表示装置および電子デバイス
JP4014710B2 (ja) 液晶表示装置
US6888160B1 (en) Semiconductor device and fabrication method thereof
CN1316631C (zh) 半导体器件及其制造方法
JP3883641B2 (ja) コンタクト構造およびアクティブマトリクス型表示装置
KR100567145B1 (ko) 반도체장치및그제조방법
JP3072326B2 (ja) 半導体単結晶薄膜基板光弁装置とその製造方法
JP4312851B2 (ja) 半導体装置およびその作製方法
US6500702B2 (en) Method for manufacturing thin film transistor liquid crystal display
JP2003517641A (ja) アクティブマトリクスデバイスの製造方法
JP2004119862A (ja) 半導体装置の作製方法
JP3934236B2 (ja) 半導体装置およびその作製方法
JP4017754B2 (ja) 液晶表示装置およびその製造方法
JP2002176179A (ja) 電気光学装置および電気光学装置の製造方法、並びに半導体装置
JP3980118B2 (ja) 液晶表示装置および電子デバイス
JP2000330135A (ja) アクティブマトリクス型液晶表示装置
JP4447584B2 (ja) 表示装置および電子デバイス
JP4481363B2 (ja) 表示装置及び電子デバイス
KR101136296B1 (ko) 폴리 실리콘형 박막 트랜지스터와 그를 가지는 폴리실리콘형 박막트랜지스터 기판 및 그 제조 방법
JP4202454B2 (ja) 半導体装置およびその作製方法
JP4005045B2 (ja) コンタクト構造およびアクティブマトリクス型表示装置
JP3884024B2 (ja) アクティブマトリクス型表示装置
JP4112587B2 (ja) 表示装置
JP4795555B2 (ja) 画像表示装置の製造方法
JP2008203844A (ja) 表示装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060613

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060811

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060912

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060913

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130922

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees