JP3917231B2 - レーザー照射装置およびレーザー照射方法 - Google Patents

レーザー照射装置およびレーザー照射方法 Download PDF

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Publication number
JP3917231B2
JP3917231B2 JP03446897A JP3446897A JP3917231B2 JP 3917231 B2 JP3917231 B2 JP 3917231B2 JP 03446897 A JP03446897 A JP 03446897A JP 3446897 A JP3446897 A JP 3446897A JP 3917231 B2 JP3917231 B2 JP 3917231B2
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Japan
Prior art keywords
homogenizer
laser beam
laser
laser light
longitudinal direction
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Expired - Fee Related
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JP03446897A
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English (en)
Japanese (ja)
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JPH09275081A5 (2
JPH09275081A (ja
Inventor
舜平 山崎
聡 寺本
直人 楠本
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP03446897A priority Critical patent/JP3917231B2/ja
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Publication of JPH09275081A5 publication Critical patent/JPH09275081A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0961—Lens arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Lasers (AREA)
JP03446897A 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法 Expired - Fee Related JP3917231B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03446897A JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4430696 1996-02-06
JP03446897A JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法
JP8-44306 1999-02-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005204124A Division JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09275081A JPH09275081A (ja) 1997-10-21
JPH09275081A5 JPH09275081A5 (2) 2004-12-24
JP3917231B2 true JP3917231B2 (ja) 2007-05-23

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Application Number Title Priority Date Filing Date
JP03446897A Expired - Fee Related JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法
JP2005204124A Expired - Fee Related JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法
JP2009143839A Expired - Fee Related JP4593671B2 (ja) 1996-02-06 2009-06-17 レーザー照射装置およびレーザー照射方法

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JP2005204124A Expired - Fee Related JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法
JP2009143839A Expired - Fee Related JP4593671B2 (ja) 1996-02-06 2009-06-17 レーザー照射装置およびレーザー照射方法

Country Status (3)

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US (7) US5900980A (2)
JP (3) JP3917231B2 (2)
KR (1) KR100376184B1 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
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US12521819B2 (en) 2019-11-11 2026-01-13 Samsung Electronics Co., Ltd. Laser annealing system and method of fabricating a semiconductor device using the same

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* Cited by examiner, † Cited by third party
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JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
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JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
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US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
EP1744349A3 (en) 1998-10-05 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
US6203952B1 (en) 1999-01-14 2001-03-20 3M Innovative Properties Company Imaged article on polymeric substrate
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP4827276B2 (ja) 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7160765B2 (en) * 1999-08-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP4748836B2 (ja) * 1999-08-13 2011-08-17 株式会社半導体エネルギー研究所 レーザ照射装置
TW544727B (en) 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
TW494444B (en) * 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
GB9922576D0 (en) * 1999-09-24 1999-11-24 Koninkl Philips Electronics Nv Laser system
KR100752808B1 (ko) * 1999-11-10 2007-08-29 하마마츠 포토닉스 가부시키가이샤 광학 렌즈의 제조방법
US6573162B2 (en) * 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
US6856630B2 (en) * 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6563581B1 (en) * 2000-07-14 2003-05-13 Applera Corporation Scanning system and method for scanning a plurality of samples
GB0019454D0 (en) * 2000-08-09 2000-09-27 Stevens Brian T Laser system
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
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US7061959B2 (en) * 2001-04-18 2006-06-13 Tcz Gmbh Laser thin film poly-silicon annealing system
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US20050259709A1 (en) 2002-05-07 2005-11-24 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7088758B2 (en) 2001-07-27 2006-08-08 Cymer, Inc. Relax gas discharge laser lithography light source
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SG120880A1 (en) 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
JP4579217B2 (ja) * 2001-08-31 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP4040934B2 (ja) * 2002-08-30 2008-01-30 浜松ホトニクス株式会社 集光装置
EP1400832B1 (en) * 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
JP2004134785A (ja) * 2002-09-19 2004-04-30 Semiconductor Energy Lab Co Ltd ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
EP1468774B1 (en) * 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4515034B2 (ja) * 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7524712B2 (en) * 2003-03-07 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7304005B2 (en) 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4619035B2 (ja) * 2003-04-24 2011-01-26 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
SG137674A1 (en) * 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7277188B2 (en) * 2003-04-29 2007-10-02 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
DE102004034253A1 (de) * 2004-07-14 2006-02-09 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Vorrichtung für die Beleuchtung einer Fläche
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
DK1756922T3 (da) * 2004-06-16 2008-11-10 Univ Danmarks Tekniske Segmenteret diode lasersystem
JP4440036B2 (ja) * 2004-08-11 2010-03-24 株式会社ディスコ レーザー加工方法
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
EP1708008B1 (en) * 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradition apparatus
US20060250897A1 (en) * 2005-05-04 2006-11-09 Brewer Donald R Analog watch fiber optic image guide
US20060251365A1 (en) * 2005-05-04 2006-11-09 Brewer Donald R Watch fiber optic image guide
JP2007110064A (ja) * 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
WO2007049525A1 (en) * 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7317179B2 (en) * 2005-10-28 2008-01-08 Cymer, Inc. Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate
US7679029B2 (en) * 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
ES2330679T3 (es) * 2005-12-16 2009-12-14 Danmarks Tekniske Universitet Sistema de laser con laser de diodo segmentado.
JP2007214527A (ja) 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
JP5099576B2 (ja) 2006-02-23 2012-12-19 株式会社Ｉｈｉ 化合物半導体の活性化方法及び装置
WO2007122060A1 (de) * 2006-04-21 2007-11-01 Carl Zeiss Laser Optics Gmbh Anordnung zum herstellen einer randscharfen beleuchtungslinie sowie anordnung zum erhöhen der asymmetrie des strahlparameterprodukts
KR101227803B1 (ko) 2006-06-09 2013-01-29 칼 짜이스 레이저 옵틱스 게엠베하 감소된 간섭을 갖는 균질화기
JP5238167B2 (ja) * 2007-02-15 2013-07-17 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
DE102007044298B3 (de) * 2007-09-17 2009-02-26 Coherent Gmbh Verfahren und Anordnung zum Erzeugen eines Laserstrahls mit einem linienhaften Strahlquerschnitt
DE102007057868B4 (de) * 2007-11-29 2020-02-20 LIMO GmbH Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung
US8432613B2 (en) * 2009-04-21 2013-04-30 Applied Materials, Inc. Multi-stage optical homogenization
US10095016B2 (en) 2011-01-04 2018-10-09 Nlight, Inc. High power laser system
WO2013009550A2 (en) * 2011-07-13 2013-01-17 Bae Systems Integration And Electronic Systems Integration Inc. Beam shaping and control apparatus
US9720244B1 (en) 2011-09-30 2017-08-01 Nlight, Inc. Intensity distribution management system and method in pixel imaging
US8946594B2 (en) 2011-11-04 2015-02-03 Applied Materials, Inc. Optical design for line generation using microlens array
KR20140036593A (ko) * 2012-09-17 2014-03-26 삼성디스플레이 주식회사 레이저 가공 장치
US9310248B2 (en) 2013-03-14 2016-04-12 Nlight, Inc. Active monitoring of multi-laser systems
DE102018211409B4 (de) * 2018-07-10 2021-02-18 Laserline GmbH Strahlformende Laseroptik und Lasersystem

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313976B1 (2) * 1969-08-04 1978-05-13
US4733944A (en) * 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
US4943733A (en) * 1987-05-15 1990-07-24 Nikon Corporation Projection optical apparatus capable of measurement and compensation of distortion affecting reticle/wafer alignment
JPH01319727A (ja) * 1988-06-22 1989-12-26 Sony Corp 光学装置
JP2657957B2 (ja) * 1990-04-27 1997-09-30 キヤノン株式会社 投影装置及び光照射方法
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
US5215595A (en) * 1991-08-08 1993-06-01 Popino James P Oil removal from animals, fish and birds using viscoelasticity
US5657138A (en) * 1991-10-13 1997-08-12 Lewis; Aaron Generating defined structures on materials using combined optical technologies for transforming the processing beam
DE4220705C2 (de) * 1992-06-24 2003-03-13 Lambda Physik Ag Vorrichtung zum Aufteilen eines Lichtstrahles in homogene Teilstrahlen
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH07307304A (ja) * 1994-05-13 1995-11-21 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
JPH0851077A (ja) * 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 多結晶半導体の製造方法及び画像表示デバイスの製造方法及び多結晶半導体の製造装置
TW345705B (en) 1994-07-28 1998-11-21 Handotai Energy Kenkyusho Kk Laser processing method
US5587330A (en) * 1994-10-20 1996-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5756364A (en) 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
US5854803A (en) 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
TW297138B (2) 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
KR100303111B1 (ko) 1995-07-19 2001-12-17 순페이 야마자끼 반도체 장치 제조 방법 및 제조 장치
JP3883592B2 (ja) 1995-08-07 2007-02-21 株式会社半導体エネルギー研究所 レーザ照射方法および半導体作製方法および半導体装置の作製方法および液晶電気光学装置の作製方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4059952B2 (ja) * 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP3770999B2 (ja) * 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
US5987799A (en) * 1998-03-12 1999-11-23 Dedeaux; Tina M. Primitive weapon muzzle loader/unloader device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12521819B2 (en) 2019-11-11 2026-01-13 Samsung Electronics Co., Ltd. Laser annealing system and method of fabricating a semiconductor device using the same

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US20060228837A1 (en) 2006-10-12
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