JP3944792B2 - イオンビームの誘導方法とそれに用いるイオンビームリペラー及びイオン注入装置 - Google Patents

イオンビームの誘導方法とそれに用いるイオンビームリペラー及びイオン注入装置 Download PDF

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JP3944792B2
JP3944792B2 JP00739597A JP739597A JP3944792B2 JP 3944792 B2 JP3944792 B2 JP 3944792B2 JP 00739597 A JP00739597 A JP 00739597A JP 739597 A JP739597 A JP 739597A JP 3944792 B2 JP3944792 B2 JP 3944792B2
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ion beam
ion
magnetic field
magnets
electrons
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Japanese (ja)
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JPH09231937A (ja
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マウリス ベンベニステ ビクター
チエン ジョング
ネイル ホースキー トーマス
エドワード レイノルズ ウイリアム
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アクセリス テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP00739597A 1996-01-22 1997-01-20 イオンビームの誘導方法とそれに用いるイオンビームリペラー及びイオン注入装置 Expired - Lifetime JP3944792B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/589,303 US5691537A (en) 1996-01-22 1996-01-22 Method and apparatus for ion beam transport
US589303 1996-01-22

Publications (2)

Publication Number Publication Date
JPH09231937A JPH09231937A (ja) 1997-09-05
JP3944792B2 true JP3944792B2 (ja) 2007-07-18

Family

ID=24357448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00739597A Expired - Lifetime JP3944792B2 (ja) 1996-01-22 1997-01-20 イオンビームの誘導方法とそれに用いるイオンビームリペラー及びイオン注入装置

Country Status (9)

Country Link
US (1) US5691537A (fr)
EP (1) EP0785568B1 (fr)
JP (1) JP3944792B2 (fr)
KR (1) KR100318872B1 (fr)
CN (1) CN1123051C (fr)
CA (1) CA2193709C (fr)
DE (1) DE69728197T2 (fr)
ES (1) ES2216107T3 (fr)
TW (1) TW315482B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2331179B (en) * 1997-11-07 2002-03-20 Applied Materials Inc Method of preventing negative charge build up on a substrate being implanted w ith positive ions and ion implantation apparatus for performing such a method
US6084241A (en) * 1998-06-01 2000-07-04 Motorola, Inc. Method of manufacturing semiconductor devices and apparatus therefor
US5959305A (en) * 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
GB9813327D0 (en) * 1998-06-19 1998-08-19 Superion Ltd Apparatus and method relating to charged particles
US6377651B1 (en) * 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
US6600163B2 (en) * 2000-12-22 2003-07-29 Alfred M. Halling In-process wafer charge monitor and control system for ion implanter
JP3593993B2 (ja) * 2001-05-01 2004-11-24 日新電機株式会社 ファラデー装置
US6831280B2 (en) * 2002-09-23 2004-12-14 Axcelis Technologies, Inc. Methods and apparatus for precise measurement of time delay between two signals
US6933511B2 (en) * 2003-11-18 2005-08-23 Atomic Energy Council Institute Of Nuclear Energy Research Ion implanting apparatus
US7820981B2 (en) * 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
JP4691347B2 (ja) * 2004-10-14 2011-06-01 株式会社アルバック イオン注入装置
JP5329050B2 (ja) * 2007-04-20 2013-10-30 株式会社Ｓｅｎ ビーム処理装置
US7842934B2 (en) * 2007-08-27 2010-11-30 Varian Semiconductor Equipment Associates, Inc. Terminal structures of an ion implanter having insulated conductors with dielectric fins
US7800083B2 (en) * 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter
US7807986B1 (en) * 2009-05-27 2010-10-05 Advanced Ion Beam Technology, Inc. Ion implanter and method for adjusting ion beam
JP5527617B2 (ja) * 2011-01-08 2014-06-18 日新イオン機器株式会社 イオン源
KR102946325B1 (ko) 2022-12-23 2026-04-01 현대선기 주식회사 선박용 소각장치
KR102946310B1 (ko) 2022-12-23 2026-04-01 현대선기 주식회사 선박용 소각장치
KR102946317B1 (ko) 2022-12-23 2026-04-01 현대선기 주식회사 선박용 소각장치
CN115968093B (zh) * 2022-12-31 2025-08-26 杭州富芯半导体有限公司 一种离子输出量监控设备、监测方法及离子注入设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101765A (en) * 1976-07-19 1978-07-18 The United States Of America As Represented By The United States Department Of Energy Means for counteracting charged particle beam divergence
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
JPH0191431A (ja) * 1987-04-16 1989-04-11 Sumitomo Eaton Noba Kk イオン打ち込み装置におけるウエハ帯電量検知装置
US4825087A (en) * 1987-05-13 1989-04-25 Applied Materials, Inc. System and methods for wafer charge reduction for ion implantation
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter
US4804837A (en) * 1988-01-11 1989-02-14 Eaton Corporation Ion implantation surface charge control method and apparatus
JP2716518B2 (ja) * 1989-04-21 1998-02-18 東京エレクトロン株式会社 イオン注入装置及びイオン注入方法
ATE111635T1 (de) * 1989-05-09 1994-09-15 Sumitomo Eaton Nova Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird.
JP2704438B2 (ja) * 1989-09-04 1998-01-26 東京エレクトロン株式会社 イオン注入装置
JPH0821361B2 (ja) * 1989-10-20 1996-03-04 三菱電機株式会社 イオン注入装置および電荷中和器
JPH03216945A (ja) * 1990-01-23 1991-09-24 Mitsubishi Electric Corp イオン注入装置
JPH03230467A (ja) * 1990-02-01 1991-10-14 Mitsubishi Electric Corp イオン注入装置
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
JPH04160748A (ja) * 1990-10-23 1992-06-04 Nec Corp イオン注入装置
US5126576A (en) * 1990-12-13 1992-06-30 Applied Materials, Inc. Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
US5343047A (en) * 1992-06-27 1994-08-30 Tokyo Electron Limited Ion implantation system
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JP3460241B2 (ja) * 1993-01-12 2003-10-27 日新電機株式会社 負イオン注入装置
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter

Also Published As

Publication number Publication date
CN1123051C (zh) 2003-10-01
EP0785568A3 (fr) 1999-08-18
DE69728197D1 (de) 2004-04-29
US5691537A (en) 1997-11-25
DE69728197T2 (de) 2004-11-25
JPH09231937A (ja) 1997-09-05
CN1161563A (zh) 1997-10-08
EP0785568A2 (fr) 1997-07-23
ES2216107T3 (es) 2004-10-16
TW315482B (fr) 1997-09-11
EP0785568B1 (fr) 2004-03-24
CA2193709C (fr) 2002-02-05
KR970060383A (ko) 1997-08-12
KR100318872B1 (ko) 2002-06-20
CA2193709A1 (fr) 1997-07-23

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