JP4105261B2 - 電子機器の作製方法 - Google Patents

電子機器の作製方法 Download PDF

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Publication number
JP4105261B2
JP4105261B2 JP24050597A JP24050597A JP4105261B2 JP 4105261 B2 JP4105261 B2 JP 4105261B2 JP 24050597 A JP24050597 A JP 24050597A JP 24050597 A JP24050597 A JP 24050597A JP 4105261 B2 JP4105261 B2 JP 4105261B2
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JP
Japan
Prior art keywords
insulating film
interlayer insulating
light absorber
pixel
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24050597A
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English (en)
Japanese (ja)
Other versions
JPH1164890A (ja
JPH1164890A5 (2
Inventor
宏勇 張
真之 坂倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP24050597A priority Critical patent/JP4105261B2/ja
Priority to US09/134,547 priority patent/US6757032B1/en
Publication of JPH1164890A publication Critical patent/JPH1164890A/ja
Priority to US10/848,146 priority patent/US7145613B2/en
Publication of JPH1164890A5 publication Critical patent/JPH1164890A5/ja
Application granted granted Critical
Publication of JP4105261B2 publication Critical patent/JP4105261B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP24050597A 1997-08-20 1997-08-20 電子機器の作製方法 Expired - Fee Related JP4105261B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP24050597A JP4105261B2 (ja) 1997-08-20 1997-08-20 電子機器の作製方法
US09/134,547 US6757032B1 (en) 1997-08-20 1998-08-17 Electronic device and method for fabricating the same
US10/848,146 US7145613B2 (en) 1997-08-20 2004-05-19 Electronic device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24050597A JP4105261B2 (ja) 1997-08-20 1997-08-20 電子機器の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007127038A Division JP4057044B2 (ja) 2007-05-11 2007-05-11 電子機器の作製方法

Publications (3)

Publication Number Publication Date
JPH1164890A JPH1164890A (ja) 1999-03-05
JPH1164890A5 JPH1164890A5 (2) 2005-04-21
JP4105261B2 true JP4105261B2 (ja) 2008-06-25

Family

ID=17060525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24050597A Expired - Fee Related JP4105261B2 (ja) 1997-08-20 1997-08-20 電子機器の作製方法

Country Status (2)

Country Link
US (2) US6757032B1 (2)
JP (1) JP4105261B2 (2)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
JP2001109404A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
JP2002006321A (ja) * 2000-04-17 2002-01-09 Seiko Epson Corp 液晶装置、投射型表示装置及び電子機器
JP4896318B2 (ja) * 2001-09-10 2012-03-14 株式会社半導体エネルギー研究所 発光装置の作製方法
KR100552975B1 (ko) * 2003-11-22 2006-02-15 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법
KR20060083247A (ko) * 2005-01-14 2006-07-20 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP4805587B2 (ja) * 2005-02-24 2011-11-02 エーユー オプトロニクス コーポレイション 液晶表示装置とその製造方法
JP4552780B2 (ja) * 2005-07-04 2010-09-29 エプソンイメージングデバイス株式会社 電気光学装置及び電子機器
JP5151782B2 (ja) * 2008-08-04 2013-02-27 コニカミノルタホールディングス株式会社 Ｔｆｔアレイ基板の製造方法
JP2010249935A (ja) 2009-04-13 2010-11-04 Sony Corp 表示装置
JP5262973B2 (ja) * 2009-05-11 2013-08-14 セイコーエプソン株式会社 電気光学装置及び電子機器
KR102057299B1 (ko) * 2009-07-31 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
JP2012220507A (ja) * 2011-04-04 2012-11-12 Jvc Kenwood Corp 液晶表示装置及びその製造方法
KR101860861B1 (ko) * 2011-06-13 2018-05-25 삼성디스플레이 주식회사 배선의 제조방법, 박막트랜지스터의 제조방법 및 평판표시장치의 제조방법
JP6099891B2 (ja) * 2012-07-03 2017-03-22 キヤノン株式会社 ドライエッチング方法
CN105572960A (zh) * 2016-03-02 2016-05-11 京东方科技集团股份有限公司 显示基板、液晶面板、显示装置及显示基板的制作方法
CN121568837A (zh) 2023-07-27 2026-02-24 强生视力健公司 监督式机器学习固化系统

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US3428044A (en) * 1965-10-15 1969-02-18 Kimberly Clark Co Coated catamenial tampon
US3595236A (en) * 1969-03-17 1971-07-27 Kimberly Clark Co Coating to aid tampon insertion and tampons coated therewith
US3976075A (en) * 1975-02-24 1976-08-24 Personal Products Company Tampon blank with reduced sloughing properties
JP2594983B2 (ja) * 1987-11-10 1997-03-26 カシオ計算機株式会社 薄膜トランジスタの製造方法
US5403300A (en) * 1989-03-31 1995-04-04 Smith & Nephew P.L.C. Tampons
DE3940640A1 (de) * 1989-12-08 1991-06-20 Nokia Unterhaltungselektronik Verfahren zum herstellen einer substratplatte fuer eine fluessigkristallzelle mit schwarzmatrixbereichen
JPH0444008A (ja) * 1990-06-12 1992-02-13 Matsushita Electric Ind Co Ltd 液晶素子の製造方法
JPH07294958A (ja) * 1994-04-26 1995-11-10 Seiko Instr Inc 光弁用半導体装置およびその製造方法
JPH08122761A (ja) * 1994-10-20 1996-05-17 Fujitsu Ltd 液晶表示素子とその製造方法
US6424388B1 (en) * 1995-04-28 2002-07-23 International Business Machines Corporation Reflective spatial light modulator array
JPH08327990A (ja) * 1995-05-29 1996-12-13 Optrex Corp 液晶表示素子用電極基板およびその製造方法
JPH09105953A (ja) * 1995-10-12 1997-04-22 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP3332773B2 (ja) * 1996-03-15 2002-10-07 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス基板の製造方法
JPH09281508A (ja) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JP3587426B2 (ja) * 1996-09-25 2004-11-10 シャープ株式会社 液晶表示装置及びその製造方法
CN1148600C (zh) 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
JP3856889B2 (ja) 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 反射型表示装置および電子デバイス
US6163055A (en) 1997-03-24 2000-12-19 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US6330047B1 (en) 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same

Also Published As

Publication number Publication date
US7145613B2 (en) 2006-12-05
US20040214359A1 (en) 2004-10-28
JPH1164890A (ja) 1999-03-05
US6757032B1 (en) 2004-06-29

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