JP4222525B2 - 半導体装置、その製造方法及び反射型液晶表示装置 - Google Patents

半導体装置、その製造方法及び反射型液晶表示装置 Download PDF

Info

Publication number: JP4222525B2
Authority: JP; Japan
Prior art keywords: wiring layer; uppermost; insulating film; film; chip
Prior art date: 1996-07-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP18494697A

Other languages

English (en)

Japanese (ja)

Other versions

JPH1092811A (ja

JPH1092811A5 (de

Inventor

正憲岩橋

真水野

甲二埴原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Kawasaki Microelectronics Inc

Pioneer Corp

Pioneer Micro Technology Corp

Original Assignee

Kawasaki Microelectronics Inc

Pioneer Corp

Pioneer Micro Technology Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-07-12

Filing date

1997-07-10

Publication date

2009-02-12

1997-07-10 Application filed by Kawasaki Microelectronics Inc, Pioneer Corp, Pioneer Micro Technology Corp filed Critical Kawasaki Microelectronics Inc

1997-07-10 Priority to JP18494697A priority Critical patent/JP4222525B2/ja

1998-04-10 Publication of JPH1092811A publication Critical patent/JPH1092811A/ja

2005-05-12 Publication of JPH1092811A5 publication Critical patent/JPH1092811A5/ja

2009-02-12 Application granted granted Critical

2009-02-12 Publication of JP4222525B2 publication Critical patent/JP4222525B2/ja

2017-07-10 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 61
238000000034 method Methods 0.000 title claims description 39
239000004973 liquid crystal related substance Substances 0.000 title claims description 34
238000004519 manufacturing process Methods 0.000 title claims description 13
239000010410 layer Substances 0.000 claims description 152
239000011229 interlayer Substances 0.000 claims description 89
239000000463 material Substances 0.000 claims description 43
238000002161 passivation Methods 0.000 claims description 24
229910052751 metal Inorganic materials 0.000 claims description 22
239000002184 metal Substances 0.000 claims description 22
239000000758 substrate Substances 0.000 claims description 21
238000005260 corrosion Methods 0.000 claims description 19
230000007797 corrosion Effects 0.000 claims description 18
238000005498 polishing Methods 0.000 claims description 16
229910052719 titanium Inorganic materials 0.000 claims description 12
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
229910052804 chromium Inorganic materials 0.000 claims description 10
229910052750 molybdenum Inorganic materials 0.000 claims description 10
229910052759 nickel Inorganic materials 0.000 claims description 10
229910052697 platinum Inorganic materials 0.000 claims description 10
229910052814 silicon oxide Inorganic materials 0.000 claims description 10
229910052718 tin Inorganic materials 0.000 claims description 10
229910021364 Al-Si alloy Inorganic materials 0.000 claims description 9
229910052581 Si3N4 Inorganic materials 0.000 claims description 8
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
239000010703 silicon Substances 0.000 claims description 6
-1 silicon oxide nitride Chemical class 0.000 claims description 6
229910052721 tungsten Inorganic materials 0.000 claims description 6
239000002131 composite material Substances 0.000 claims description 5
238000000151 deposition Methods 0.000 claims description 5
229910052737 gold Inorganic materials 0.000 claims description 5
239000011810 insulating material Substances 0.000 claims description 5
229910021332 silicide Inorganic materials 0.000 claims description 5
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
229910052802 copper Inorganic materials 0.000 claims 3
239000010408 film Substances 0.000 description 225
230000001681 protective effect Effects 0.000 description 20
239000010936 titanium Substances 0.000 description 19
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 17
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
238000005268 plasma chemical vapour deposition Methods 0.000 description 5
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
239000005368 silicate glass Substances 0.000 description 4
238000005229 chemical vapour deposition Methods 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
230000007547 defect Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
238000010030 laminating Methods 0.000 description 3
150000002739 metals Chemical class 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
239000003990 capacitor Substances 0.000 description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
238000009413 insulation Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000000059 patterning Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229920005591 polysilicon Polymers 0.000 description 2
239000002994 raw material Substances 0.000 description 2
239000000126 substance Substances 0.000 description 2
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
229910018125 Al-Si Inorganic materials 0.000 description 1
229910018520 Al—Si Inorganic materials 0.000 description 1
230000002411 adverse Effects 0.000 description 1
239000003513 alkali Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
239000002585 base Substances 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000000994 depressogenic effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000003792 electrolyte Substances 0.000 description 1
238000005566 electron beam evaporation Methods 0.000 description 1
238000010828 elution Methods 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
229910001415 sodium ion Inorganic materials 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Images

Landscapes

Liquid Crystal (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Formation Of Insulating Films (AREA)

JP18494697A 1996-07-12 1997-07-10 半導体装置、その製造方法及び反射型液晶表示装置 Expired - Lifetime JP4222525B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP18494697A JP4222525B2 (ja)	1996-07-12	1997-07-10	半導体装置、その製造方法及び反射型液晶表示装置

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP8-183152		1996-07-12
JP18315296		1996-07-12
JP18903796		1996-07-18
JP8-189037		1996-07-18
JP18494697A JP4222525B2 (ja)	1996-07-12	1997-07-10	半導体装置、その製造方法及び反射型液晶表示装置

Publications (3)

Publication Number	Publication Date
JPH1092811A JPH1092811A (ja)	1998-04-10
JPH1092811A5 JPH1092811A5 (de)	2005-05-12
JP4222525B2 true JP4222525B2 (ja)	2009-02-12

Family

ID=27325259

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP18494697A Expired - Lifetime JP4222525B2 (ja)	1996-07-12	1997-07-10	半導体装置、その製造方法及び反射型液晶表示装置

Country Status (1)

Country	Link
JP (1)	JP4222525B2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008032780A (ja) *	2006-07-26	2008-02-14	Seiko Epson Corp	電気光学装置の製造方法、及び電気光学装置、並びに電子機器
KR100889553B1 (ko) *	2007-07-23	2009-03-23	주식회사 동부하이텍	시스템 인 패키지 및 그 제조 방법
JP5291917B2 (ja) *	2007-11-09	2013-09-18	ルネサスエレクトロニクス株式会社	半導体装置およびその製造方法
JP2015114433A (ja) *	2013-12-10	2015-06-22	富士通セミコンダクター株式会社	半導体装置及び半導体装置の製造方法
JP6493955B2 (ja) *	2014-10-09	2019-04-03	ラピスセミコンダクタ株式会社	半導体装置及び半導体装置の製造方法

1997
- 1997-07-10 JP JP18494697A patent/JP4222525B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPH1092811A (ja)	1998-04-10

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