JPH01117043A - 基板中にエピタキシヤル・シリコン成長層を形成する方法 - Google Patents

基板中にエピタキシヤル・シリコン成長層を形成する方法

Info

Publication number
JPH01117043A
JPH01117043A JP63183752A JP18375288A JPH01117043A JP H01117043 A JPH01117043 A JP H01117043A JP 63183752 A JP63183752 A JP 63183752A JP 18375288 A JP18375288 A JP 18375288A JP H01117043 A JPH01117043 A JP H01117043A
Authority
JP
Japan
Prior art keywords
silicon
epitaxial
layer
substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63183752A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582058B2 (2
Inventor
Klaus D Beyer
クラース・デイトリツチ・バイアー
Louis L Hsu
ルイーズ・ルーチエン・スー
Dominic J Schepis
ドミニク・ジヨセフ・シエピース
Victor J Silvestri
ビクター・ジヨセフ・シルヴエストリイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH01117043A publication Critical patent/JPH01117043A/ja
Publication of JPH0582058B2 publication Critical patent/JPH0582058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/029—Differential crystal growth rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects

Landscapes

  • Element Separation (AREA)
JP63183752A 1987-10-23 1988-07-25 基板中にエピタキシヤル・シリコン成長層を形成する方法 Granted JPH01117043A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US111888 1987-10-23
US07/111,888 US4758531A (en) 1987-10-23 1987-10-23 Method of making defect free silicon islands using SEG

Publications (2)

Publication Number Publication Date
JPH01117043A true JPH01117043A (ja) 1989-05-09
JPH0582058B2 JPH0582058B2 (2) 1993-11-17

Family

ID=22340978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63183752A Granted JPH01117043A (ja) 1987-10-23 1988-07-25 基板中にエピタキシヤル・シリコン成長層を形成する方法

Country Status (5)

Country Link
US (1) US4758531A (2)
EP (1) EP0313493B1 (2)
JP (1) JPH01117043A (2)
CA (1) CA1277778C (2)
DE (1) DE3850843T2 (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283615A (ja) * 1996-04-12 1997-10-31 Lg Semicon Co Ltd 半導体素子の隔離膜の構造及びその膜の形成方法
KR19990057360A (ko) * 1997-12-29 1999-07-15 김영환 반도체소자의 소자분리막 제조방법

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929570A (en) * 1986-10-06 1990-05-29 National Semiconductor Corporation Selective epitaxy BiCMOS process
US4818713A (en) * 1987-10-20 1989-04-04 American Telephone And Telegraph Company, At&T Bell Laboratories Techniques useful in fabricating semiconductor devices having submicron features
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
DE68913254T2 (de) * 1988-10-02 1994-07-07 Canon Kk Gegenstand aus Kristall und Verfahren zu seiner Herstellung.
US4975385A (en) * 1990-04-06 1990-12-04 Applied Materials, Inc. Method of constructing lightly doped drain (LDD) integrated circuit structure
US5192706A (en) * 1990-08-30 1993-03-09 Texas Instruments Incorporated Method for semiconductor isolation
JPH0697400A (ja) * 1990-11-29 1994-04-08 Texas Instr Inc <Ti> Ｓｏｉウェーハ及びその製造方法
DE4041276C1 (2) * 1990-12-21 1992-02-27 Siemens Ag, 8000 Muenchen, De
US5073516A (en) * 1991-02-28 1991-12-17 Texas Instruments Incorporated Selective epitaxial growth process flow for semiconductor technologies
US5212112A (en) * 1991-05-23 1993-05-18 At&T Bell Laboratories Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets
US5087586A (en) * 1991-07-03 1992-02-11 Micron Technology, Inc. Process for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layer
US5266517A (en) * 1991-12-17 1993-11-30 Texas Instruments Incorporated Method for forming a sealed interface on a semiconductor device
US5302233A (en) * 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
US5773871A (en) * 1993-06-24 1998-06-30 Northern Telecom Limited Integrated circuit structure and method of fabrication thereof
US5466963A (en) * 1994-01-13 1995-11-14 Harris Corporation Trench resistor architecture
US5693971A (en) * 1994-07-14 1997-12-02 Micron Technology, Inc. Combined trench and field isolation structure for semiconductor devices
JP2686735B2 (ja) * 1994-12-30 1997-12-08 現代電子産業株式会社 半導体装置の素子分離方法
US5877217A (en) * 1995-12-26 1999-03-02 Alteon Inc. N-acylaminoalkyl-hydrazinecarboximidamides
US5834358A (en) * 1996-11-12 1998-11-10 Micron Technology, Inc. Isolation regions and methods of forming isolation regions
KR100444313B1 (ko) * 1997-06-28 2004-11-06 주식회사 하이닉스반도체 반도체소자의제조방법
US5891763A (en) * 1997-10-22 1999-04-06 Wanlass; Frank M. Damascene pattering of SOI MOS transistors
US6107157A (en) * 1998-02-27 2000-08-22 Micron Technology, Inc. Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination
US6207515B1 (en) * 1998-05-27 2001-03-27 Taiwan Semiconductor Manufacturing Company Method of fabricating buried source to shrink chip size in memory array
US6251734B1 (en) * 1998-07-01 2001-06-26 Motorola, Inc. Method for fabricating trench isolation and trench substrate contact
TW396516B (en) * 1998-09-14 2000-07-01 United Microelectronics Corp Process and pattern for shallow trench isolation
US6214694B1 (en) * 1998-11-17 2001-04-10 International Business Machines Corporation Process of making densely patterned silicon-on-insulator (SOI) region on a wafer
US6180486B1 (en) 1999-02-16 2001-01-30 International Business Machines Corporation Process of fabricating planar and densely patterned silicon-on-insulator structure
JP3485081B2 (ja) * 1999-10-28 2004-01-13 株式会社デンソー 半導体基板の製造方法
US6409829B1 (en) * 1999-12-15 2002-06-25 Agere Systems Guardian Corp. Manufacture of dielectrically isolated integrated circuits
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US6998305B2 (en) * 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
US7067387B2 (en) * 2003-08-28 2006-06-27 Taiwan Semiconductor Manufacturing Company Method of manufacturing dielectric isolated silicon structure
US7880255B2 (en) * 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
EP1630882B1 (en) 2004-08-31 2012-05-02 STMicroelectronics S.r.l. Nanometric structure and corresponding manufacturing method
EP1630127B1 (en) 2004-08-31 2008-09-10 STMicroelectronics S.r.l. Method for realising a hosting structure of nanometric elements
EP1630881B1 (en) * 2004-08-31 2011-11-16 STMicroelectronics Srl Hosting structure of nanometric elements and corresponding manufacturing method
US7144779B2 (en) * 2004-09-01 2006-12-05 Micron Technology, Inc. Method of forming epitaxial silicon-comprising material
US7531395B2 (en) * 2004-09-01 2009-05-12 Micron Technology, Inc. Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
US8673706B2 (en) * 2004-09-01 2014-03-18 Micron Technology, Inc. Methods of forming layers comprising epitaxial silicon
US7132355B2 (en) * 2004-09-01 2006-11-07 Micron Technology, Inc. Method of forming a layer comprising epitaxial silicon and a field effect transistor
US7547605B2 (en) * 2004-11-22 2009-06-16 Taiwan Semiconductor Manufacturing Company Microelectronic device and a method for its manufacture
US9685524B2 (en) * 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
TWI489557B (zh) 2005-12-22 2015-06-21 維雪 希里康尼克斯公司 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080124847A1 (en) * 2006-08-04 2008-05-29 Toshiba America Electronic Components, Inc. Reducing Crystal Defects from Hybrid Orientation Technology During Semiconductor Manufacture
US8741743B2 (en) * 2007-01-05 2014-06-03 Freescale Semiconductor, Inc. Integrated assist features for epitaxial growth
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
ATE521986T1 (de) * 2008-01-28 2011-09-15 Nxp Bv Verfahren zur herstellung eines gruppe-iv- halbleitersubstrats mit zweifacher ausrichtung
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
CN102569513B (zh) 2010-12-22 2016-02-17 李冰 一种波导光探测器及其制备方法
CN102566090B (zh) 2010-12-22 2014-12-10 李冰 一种光波导开关
US9256028B2 (en) 2011-01-14 2016-02-09 Bing Li Dispersion-corrected arrayed waveguide grating
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
DE102016101559A1 (de) * 2016-01-28 2017-08-03 Infineon Technologies Austria Ag Verfahren zum herstellen von halbleitervorrichtungen, einschliesslich einer abscheidung von kristallinem silizium in gräben

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121952A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置の製造方法
JPS6286838A (ja) * 1985-10-14 1987-04-21 Fujitsu Ltd 集積回路の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123143A (en) * 1979-03-15 1980-09-22 Nec Corp Manufacture of semiconductor device
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
JPS58168260A (ja) * 1982-03-30 1983-10-04 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置およびその製造方法
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS59134819A (ja) * 1982-09-03 1984-08-02 Nec Corp 半導体基板の製造方法
JPS59167014A (ja) * 1983-03-11 1984-09-20 Sony Corp 半導体装置の製法
JPS6016439A (ja) * 1983-07-08 1985-01-28 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6016420A (ja) * 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
JPH0682613B2 (ja) * 1984-03-13 1994-10-19 日本電気株式会社 選択エピタキシヤル成長基板
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
JPS61182220A (ja) * 1985-02-08 1986-08-14 Nec Corp 半導体装置の製造方法
EP0214512A3 (en) * 1985-09-05 1990-06-13 EASTMAN KODAK COMPANY (a New Jersey corporation) Expitaxially grown isolation device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121952A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置の製造方法
JPS6286838A (ja) * 1985-10-14 1987-04-21 Fujitsu Ltd 集積回路の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283615A (ja) * 1996-04-12 1997-10-31 Lg Semicon Co Ltd 半導体素子の隔離膜の構造及びその膜の形成方法
KR19990057360A (ko) * 1997-12-29 1999-07-15 김영환 반도체소자의 소자분리막 제조방법

Also Published As

Publication number Publication date
JPH0582058B2 (2) 1993-11-17
EP0313493B1 (en) 1994-07-27
DE3850843D1 (de) 1994-09-01
DE3850843T2 (de) 1995-03-09
EP0313493A2 (en) 1989-04-26
CA1277778C (en) 1990-12-11
EP0313493A3 (en) 1990-06-13
US4758531A (en) 1988-07-19

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